Bio-Inspired Structures Spring 2009

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MIT OpenCourseWare http://ocw.mit.edu 16.982 Bio-Inspired Structures Spring 2009 For information about citing these materials or our Terms of Use, visit: http://ocw.mit.edu/terms.

Chapter 14 Bioinspired and Natural Nanomaterials Velcro inspired by seeds' clingy burrs IMOD Display Technology inspired by butterfly wings Low-friction ship hulls inspired by shark skin Temperature-adapting fabric inspired by pinecone Dirt- and water-resistant paint inspired by the lotus flower Neuromorphic computer chips inspired by neural networks Chapter 12 1 Butterfly Wings and Interference Chitin: hard translucent material Chemical or Physical Color (Iridescence) 1

Intro to Displays Information Displays: Ink & paper ~ 5000 year ago Cathode Ray Tube (CRT) displays ~ 100 years ago Flat Panel Displays (FPD) displays ~ 40 years ago Next big thing -???? Phone/PDA Displays Emissive Non-emissive OLED SRD LCD EF IMOD OLED Organic Light Emitting Diodes LCD Liquid Crystal Displays EF Electrophoretic IMOD - Interferometric Modulator Displays Chapter 12 3 Low-power Reflective Direct View Display Based on Micro-Electro-Mechanical Systems (MEMS) technology Electro mechanical devices with optical functionality Key Benefits compared to LCD 2x-3x reflectivity of reflective LCDs drives large power savings Near zero power for static image High response speed enables video Chapter 12 4 2

MEMS Device vs. Solid State Device Simple n-channel MOSFET Source Channel Gate Gate oxide (~ 30 A) Drain n+ n+ Hinge Movable beam Air p-type silicon Post Dielectric Bottom electrode Typical MEMS/NEMS attributes; Airgaps/cavities and moving parts Example: Si cantilevers Chapter 12 5 MEMS: Bulk and Surface Micromachining - Si is a dominant substrate/ mech - can be fabricated on any planar structure substrate - based mainly on (deep) dry or wet - based mainly on thin film depositions etching - fabrication approach similar to solid - sculptor s approach structure is state devices (except for sac layer trimmed from a bulk (silicon) piece removal) Chapter 12 6 3

Principles of Operation Incident light Reflected light Incident light Reflected light + V _ Chapter 12 7 RGB Color scheme Color Reproduction RGB sub pixels utilized in same manner as LCD Color grayscale generated by spatial or temporal modulation Chapter 12 8 4

Simple electromechanical model Competition between electrostatic force and elastic restoring force Chapter 12 9 Hysterisis Hysteresis loop gives the memory effect Allows an array to be addressed in a line-at-a-time fashion Image is maintained once the array is addressed 10 5

Power savings Highly reflective display Viewable in most ambient lighting conditions Greatly reduces the need for supplemental lighting Bi-stable display technology Drastically reduces power Hysteresis memory characteristic leads to near-zero standby power with full screen static image Low operation voltage Chapter 12 11 Simplified Manufacturing Scheme Sacrificial material Insulator Absorber conductor Substrate Deposit thin film stack Absorber Insulator Sacrificial material Pattern stack Form posts Mechanical film Support post Airgap Remove sacrificial material Pattern mechanical layer Deposit mechanical layer Chapter 12 12 6

Sacrificial layer removal XeF2 releasing Chapter 12 13 Superhydrophobicity The contact angle formed between a droplet and a solid surface is a result of the equilibrium between three surface tensions: solid-vapor γ SV, liquid-vapor γ LV, and solid-liquid γ SL γ SV γ cosθ = γ LV SL Wenzel relationship: cosθ A = r cosθ T r the roughness ratio, defined as the true surface area divided by the geometric area of integration; Θ A actual angle; Θ T = theoretical (Eq. above) Chapter 12 14 7

A Model Artificial Lotus Leaf - Two scales of topography are important Chapter 12 15 Spider Silk Spider silks are comparable in strength to the best synthetic material made by man: strength of spider silk ~ 5x strength of steel of the same weight σ (stress) E = ε (strain) Images removed due to copyright restrictions, from J.M. Gosline, et al. J. Exp. Biol 202, (1999) 3295. Chapter 12 16 8