NSS22WTG 2, 2 A, Low CE(sat) PNP Transistor ON Semiconductor s e 2 PowerEdge family of low CE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage ( CE(sat) ) and high current gain capability. These are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important. Typical application are DCDC converters and power management in portable and battery powered products such as cellular and cordless phones, PDAs, computers, printers, digital cameras and MP3 players. Other applications are low voltage motor controls in mass storage products such as disc drives and tape drives. In the automotive industry they can be used in air bag deployment and in the instrument cluster. The high current gain allows e 2 PowerEdge devices to be driven directly from PMU s control outputs, and the Linear Gain (Beta) makes them ideal components in analog amplifiers. Features High Current Capability (3 A) High Power Handling (Up to 65 mw) Low CE(s) (7 m Typical @ A) Small Size These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant Benefits High Specific Current and Power Capability Reduces Required PCB Area Reduced Parasitic Losses Increases Battery Life 2 OLTS 2. AMPS PNP LOW CE(sat) TRANSISTOR EQUIALENT R DS(on) 63 m 3 BASE COLLECTOR, 2, 5, 6 4 EMITTER SC88/SOT363 CASE 49B STYLE 2 MAXIMUM RATINGS (T A = 25 C) Rating Symbol Max Unit Collector-Emitter oltage CEO 2 dc Collector-Base oltage CBO 2 dc Emitter-Base oltage EBO 5. dc Collector Current Continuous Collector Current Peak I C 2. I CM 3. Electrostatic Discharge ESD HBM Class 3 MM Class C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Adc DEICE MARKING 6 2 M 2 = Specific Device Code M = Date Code = PbFree Package Device Package Shipping NSS22WTG ORDERING INFORMATION SOT363 (PbFree) 3 / Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8/D. Semiconductor Components Industries, LLC, 23 June, 23 Rev. 2 Publication Order Number: NSS22W/D
NSS22WTG THERMAL CHARACTERISTICS Characteristic Symbol Max Unit T A = 25 C Derate above 25 C JunctiontoAmbient T A = 25 C Derate above 25 C JunctiontoAmbient JunctiontoLead 6 (Single Pulse < sec.) Junction and Storage Temperature Range P D (Note ) 45 3.6 mw mw/ C R JA (Note ) 275 C/W P D (Note 2) 65 mw 5.2 mw/ C R JA (Note 2) 92 C/W R JL 5 C/W P D Single.4 W T J, T stg 55 to +5 C ELECTRICAL CHARACTERISTICS (T J = 25 C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS CollectorEmitter Breakdown oltage, (I C = madc, I B = ) (BR)CEO 2 5 dc CollectorBase Breakdown oltage, (I C =. madc, I E = ) (BR)CBO 2 25 dc EmitterBase Breakdown oltage, (I E =. madc, I C = ) (BR)EBO 5. 7. dc Collector Cutoff Current, ( CB = 2 dc, I E = ) I CBO.2. Adc CollectorEmitter Cutoff Current, ( CES = 2 dc, I E = ) I CES.3. Adc Emitter Cutoff Current, ( EB = 5. dc, I E = ) I EBO.3. Adc ON CHARACTERISTICS DC Current Gain (Note 3) (I C =.5 A, CE =.5 ) (I C =.8 A, CE =.5 ) (I C =. A, CE =.5 ) CollectorEmitter Saturation oltage (Note 3) (I C =.5 A, I B = ma) (I C =.8 A, I B = 6 ma) (I C =. A, I B = 2 ma) BaseEmitter Saturation oltage (Note 3) (I C =. A, I B = 2 ma) BaseEmitter Turnon oltage (Note 3) (I C =. A, CE =.5 ) Cutoff Frequency (I C = ma, CE = 5., f = MHz) Output Capacitance ( CB =.5, f =. MHz). FR4, Minimum Pad, oz Coverage. 2. FR4, Pad, oz Coverage. 3. Pulsed Condition: Pulse Width < 3 sec, Duty Cycle < 2%. h FE CE(sat) 8 65 6..4.7 3.6.235.29 BE(sat).84.95 BE(on).8.95 f T C obo 5 65 MHz pf 2
NSS22WTG CE, COLLECTOR EMITTER OLTAGE ().5.4 2 A.3.2 A. 8 ma I C = ma 5 ma I B, BASE CURRENT (ma) Figure. Collector Emitter oltage vs. Base Current CE, COLLECTOR EMITTER OLTAGE ().5.4.3.2 I C /I B =. I C /I B =... Figure 2. Collector Emitter oltage vs. Collector Current h FE, DC CURRENT GAIN 4 25 C CE =.5 3 2 25 C T A = 55 C... BE, BASE EMITTER OLTAGE ()..9.8 T A = 55 C.7.6.5.4.3 25 C 25 C... CE =.5 BE(sat), BASE EMITTER SATURATION OLTAGE ()..9.8.7.6. Figure 3. DC Current Gain vs. Collector Current I C /I B =.. I C /I B = I C, COLLECTOR CURRENT (A).. Figure 4. Base Emitter oltage vs. Collector Current dc s ms SINGLE PULSE T A = 25 C ms ms. CE, COLLECTOR EMITTER OLTAGE (OLTS) Figure 5. Base Emitter Saturation oltage vs. Base Current Figure 6. Safe Operating Area 3
NSS22WTG r(t), MINIMUM PAD NORMALIZED TRANSIENT THERMAL RESISTANCE... D =.5 D =.2 D =. D =.5 D =.2 D =. SINGLE PULSE..... t, TIME (s) Figure 7. Normalized Thermal Response 4
NSS22WTG PACKAGE DIMENSIONS H E D e 6 5 4 2 3 E A b 6 PL.2 (.8) M E M SC88/SC76/SOT363 CASE 49B2 ISSUE W A3 C NOTES:. DIMENSIONING AND TOLERANCING PER ANSI Y4.5M, 982. 2. CONTROLLING DIMENSION: INCH. 3. 49B OBSOLETE, NEW STANDARD 49B2. MILLIMETERS DIM MIN NOM MAX A.8.95. A..5. A3 b..2.3 C..4.25 D.8 2. 2.2 E.5.25.35 e.65 BSC L..2.3 H E 2. 2. 2.2 STYLE 2: PIN. COLLECTOR 2. COLLECTOR 3. BASE 4. EMITTER 5. COLLECTOR 6. COLLECTOR INCHES MIN NOM MAX.3.37.43..2.4.2 REF.8 REF.4.8.2.4.5..7.78.86.45.49.53.26 BSC.4.8.2.78.82.86 A L SOLDERING FOOTPRINT*.5.97.65.25.4.57.65.25.9.748 SCALE 2: mm inches *For additional information on our PbFree strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 563, Denver, Colorado 827 USA Phone: 33675275 or 8344386 Toll Free USA/Canada Fax: 33675276 or 83443867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 82829855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 42 33 79 29 Japan Customer Focus Center Phone: 835773385 5 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative NSS22W/D