Fiber Pigtailed Pulsed Laser Diodes

Similar documents
Fiber Pigtailed Pulsed Laser Diodes

High Power Pulsed Laser Diodes 850-Series

High Power Pulsed Laser Diodes 850-Series

High End / Low Cost Pulsed Laser Diodes 905D1SxxUA-Series

ML-COAX-X-DFB-2G5-X-X-2. CWDM COAXIAL FIBER PIGTAILED DFB LASER FOR 2.5 Gb/s DFB DIGITAL APPLICATIONS

PV Series 850 nm VCSELs

Laser Diode in TO-220 Package with FC-Connector 1.5 W cw Version 1.1 SPL 2F94-2S

Silicon Avalanche Photodiode SAR-/SARP-Series

INGAAS FAST PIN (RF) AMPLIFIED PHOTODETECTORS

1064CHP. Active Components Seed Laser Modules. Key Features. Applications. For more Info. 500 mw 1060 nm Cooled Seed Laser Module

PGEW Series of Single- and Multi-epi 905 nm Pulsed Semiconductor Lasers Low-Cost High-Power Laser-Diode Family for Commercial Range Finding

PL 63/65/67 Visible Series Laser Diode Modules

QuickSwitch Pulsed Laser Diode QS-905 Series PRELIMINARY. Laser Diodes. Description. Features. Applications

Pulsed 1064nm / 1030nm Narrow Bandwidth FBG High Power Laser Diode Module

DL Blue Laser Diode in TO38 ICut Package. PRELIMINARY Datasheet. Creative Technology Lasers (925) Tele.

Blue Laser Diode in TO38 ICut Package, 80mW CW DL PRELIMINARY

Green Laser Diode in TO38 ICut Package Version 0.2

CWDM Coaxial DFB-LD Module for CATV Return-path

Pulsed 10xx nm High Power Laser Diode Module

SPL PL90_3. Nanostack Pulsed Laser Diode in Plastic Package 75 W Peak Power Version 1.5

Green Laser Diode in TO56 Package Version 0.2 PLT5 520B. ATTENTION Observe Precautions For Handling Electrostatic Sensitive Device

SINGLE-MODE LASER DIODES. Chip on Submount, QA-Mount. Laser Diodes

600 mw Fiber Bragg Grating Stabilized 14xx nm Pump Modules. S36 Series

Green Laser Diode in TO38 ICut Package Version 1.1 PL 520. ATTENTION Observe Precautions For Handling Electrostatic Sensitive Device

High-Power 2.0 W 830 nm Fiber-Coupled Diode Laser 2486-L3 Series

L4 and L4i 915/940 nm Fiber- Coupled Lasers

Coaxial Analog PIN Detector Module with Pigtail

High-Power 8.0 W 9xx nm Fiber-Coupled Diode Laser 6397-L3 Series

European Connectorized Receivers

EYP-DFB BFY02-0x0x

HIGH BANDWIDTH DFB LASERS

Cooled 10pin butterfly 980nm Pump Laser Module. Applications

Sumitomo Electric Industries, Ltd.

InGaAs Avalanche Photodiode. IAG-Series

P-CUBE-Series High Sensitivity PIN Detector Modules

ic-sn85 BLCC SN1C INFRARED LED

Product Bulletin. Temperature Tunable 10 mw WDM Laser for Direct Modulation in Links up to 180 km CQF413/608 Series

High Power Infrared Emitting Diode, 850 nm, Surface Emitter Technology

Infrared Emitting Diode, 950 nm, GaAs

High Power Infrared Emitting Diode, 850 nm, Surface Emitter Technology

Features 1310nm SLEDs InGaAs Diodes systems Wide Spectral Width, 160nm Ideal for Networking Applications DC to 200MHz operation

Infrared Emitting Diode, 950 nm, GaAs

High-Power 8xx nm Fiber-Coupled Diode Laser 2495-L3 Series

F6 Series Diode Lasers 6-Pin Fiber-Coupled Single-Stripe CW Devices

SPL DS90A_3. Chip. Applications. Features: Ordering Information. Produktdatenblatt Version 1.1 SPL DS90A_3. Nanostack Pulsed Laser Diode

High Speed Infrared Emitting Diode, 850 nm, Surface Emitter Technology

EYP-DFB BFY02-0x0x

Infrared Emitting Diode, RoHS Compliant, 950 nm, GaAs

Infrared Emitting Diode, 950 nm, GaAs

ic-sd85 olga SD2C3 Infrared LED

Infrared Emitting Diode, 950 nm, GaAs

DL47B3A 2.5 Gbps 1550 nm Direct Modulation DFB Laser Module

Infrared Emitting Diode, 950 nm, GaAs

PLT Metal Can TO56. Applications. Features: Ordering Information. Produktdatenblatt Version 1.1. Blue-Cyan Laser Diode in TO56 Package

Product Bulletin. 14xx nm, 300 mw Laser Diode 3400 Series

High Speed Infrared Emitting Diode, 890 nm, GaAlAs Double Hetero

High Speed Infrared Emitting Diodes, 940 nm, Surface Emitter Technology

High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero

MXER-LN series 1550 nm band Very High Extinction Ratio Intensity Modulators

LNCT22PK01WW. Description. Package. Feature. Pin assignment. Application Optical disk drive Sensing Industrial use. Absolute Maximum Ratings 3)

Up to 340 mw Fiber Bragg Grating Stabilized 980 nm Pump Modules. S26 Series

HOD /BBA HOD /BBA

High Power Infrared Emitting Diode, 940 nm, Surface Emitter Technology

Up to 460 mw Fiber Bragg Grating Stabilized 980 nm Pump Modules. S27 Series

Infrared Emitting Diode, RoHS Compliant, 950 nm, GaAs

Rest of gate R0.8 ± 0.1 GL483Q. Rest of gate 1.6 ± 0.2

HIGH POWER DFB LASERS

High Speed Infrared Emitting Diode, 890 nm, GaAlAs Double Hetero

High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero

Narrow Linewidth Full Band Tunable DFB Laser Module. Component Specifications

PLT5 450B. Metal Can TO56. Applications. Features: Ordering Information. Produktdatenblatt Version 1.1. Blue Laser Diode in TO56 Package

High Speed Infrared Emitting Diode, 850 nm, GaAlAs Double Hetero

PL 520B. Metal Can TO38. Applications. Features: Ordering Information. Produktdatenblatt Version 1.1 PL 520B. Green Laser Diode in TO38 ICut Package

1310nm FP TX/1550nm RX PD 1.5GHz CATV Transmission. HERPD31xx510MSAxx. Features: Applications: Absolute Maximum Ratings: Coaxial Package

High Speed Infrared Emitting Diode, 830 nm, GaAlAs Double Hetero

Surface Mount 905 nm Pulsed Semiconductor Laser 4-channel Array High Power Laser-Diode Family for LiDAR and Range Finding

Sumitomo Electric Industries, Ltd.

High-Speed InGaAs PIN C30616, C30637, C30617, C30618 InGaAs PIN Photodiodes

Description. Features Advanced Multiple Quantum Well (MQW) Fabry-Perot Laser Design Cost-effective Uncooled Laser Technology 5.6-mm TO-style package

PLT Metal Can TO56. Applications. Features: Ordering Information. Produktdatenblatt Version 1.1. Blue-Cyan Laser Diode in TO56 Package

ic-sg85 BLCC SG1C Infrared LED

Silicon PIN Photodiode, RoHS Compliant

Infrared Emitting Diode, 875 nm, GaAlAs

1550nm MQW-FP Laser Diode with pigtail for OTDR(8-12mW) OSMFOP-5XXXXXXX. Features: Applications: General: Absolute Maximum Ratings: *Note1

High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs

MXER-LN series 1550 nm band Very High Extinction Ratio Intensity Modulators

Product Bulletin. SDL-2400 Series 2.0 & 3.0 W, 798 to 800/808 to 812 nm High-brightness Laser Diodes

Silicon PIN Photodiode

Up to 720 mw Fiber Bragg Grating Stabilized 980 nm Pump Modules. S30 Series

HOD /BBA HOD /BBA

Up to 700 mw Fiber Bragg Grating Stabilized 980 nm Pump Modules with Low- Power Consumption. S28 Series

Up to 950 mw Fiber Bragg Grating Stabilized 980 nm Pump Modules. S31 Series

Infrared Emitting Diode, 875 nm, GaAlAs

Green Laser Diode in TO56 Package Version 0.3 PLT ATTENTION Observe Precautions For Handling Electrostatic Sensitive Device

High Power Infrared Emitting Diode, 890 nm, GaAlAs / Double Hetero

Infrared Emitting Diode, RoHS Compliant, 875 nm, GaAlAs

Dual Color Emitting Diodes, 660 nm and 940 nm

915/940 nm Fiber-Coupled Diode Lasers. L4S-Series

High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs

COPYRIGHT 2013 LED ENGIN. ALL RIGHTS RESERVED. LZ1-00R500 (1.0 08/23/13)

Transcription:

Features Single and stacked devices up to 65 Watts ex fiber 905 nm and 1550 nm Coupling efficiency up to 85% Excellent temperature stability Custom versions available Applications Range finding Surveying equipment Laser radar Medical DTS 1

905 xx FP-Series Generic Characteristics at t RT = 21 C Min Typ Max Units Wavelength of peak radiant intensity l m Spectral bandwidth Dl at 50% intensity points 895 905 915 nm 8 nm Wavelength temperature coefficient 0.27 nm/ C * 8 nm for multi-junction devices Multi Junction Chips and Stacked Arrays Stacked chip characteristics at t RT = 21 C, t W = 150 ns, P rr = 6.66 khz Parameter 905D1S3J03FP- 10/22-F-0-01 905D1S3J09FP- 40/22-F-0-01 905D2S3J09FP- 40/22-F-0-01 Integrated Pulsed Laser Diode 905D1S3J03R 905D1S3J09R 905D2S3J09R Po ex fiber at i FM, (min.) 12 W 35 W 65 W Fiber core / cladding diameter 105 µm/125 µm 400 µm/440 µm 400 µm/440 µm Fiber NA 0.22 0.22 0.22 Max peak forward current i FM 11 A 35 A 35 A lth typ 300 ma 800 ma 800 ma 2

155 xx FP-Series Generic Characteristics at t RT = 21 C Min Typ Max Units Wavelength of peak radiant intensity l m Spectral bandwidth Dl at 50% intensity points 1520 1550 1580 nm 30 nm Wavelength temperature coefficient 0.6 nm/ C Single Chips Single chip characteristics at t RT = 21 C, T W = 150 ns, P rr = 3.33 khz Parameter HI155G1S02FP-62/ 27-F-0-01 HI155G1S04FP-10/ 22-L-0-01 HI155G1S04FP-10/ 22-F-0-01 Integrated Pulsed Laser Diode HI155G1S02R HI155G1S04R HI155G1S04R Po ex fiber at i FM, (min) * 4 W 7 W 5 W Fiber core / cladding diameter 62.5 µm / 125 µm 105 µm / 125 µm 105 µm / 125 µm Fiber NA 0.27 0.22 0.22 Max. peak forward current i FM 20 A 30 A 30 A lth typ 300 ma 600 ma 600 ma * l FM is the maximum peak current under any drive condition and is applicable to devices operated for short and intermittent duration such as in hand held range finders. For applications that demand continuous use at maximum duty factor, we recommended l FM at 50% to ensure longevity. High temperature operation will reduce peak power and MTTF so for optimal performance under high stress conditions it is important to provide an adequate heat sink. 3

Absolute Maximum Ratings Maximum ratings Peak reverse voltage Pulse duration Single element Stacks Limiting values 6 V 150 ns 150 ns Duty factor 0.1% Temperature Storage Operating -55 C to +85 C -40 C to +85 C Lead soldering 5 seconds max at 200 C Note: Further specifications are available on the individual datasheets of the integrated pulsed laser diode. 4

Product Number Designation - - - - F P 0 1 Wavelength Emitter Size L= lensed fiber Length 905D = 905 nm 02= 50 µm F= flat fiber 1m HI155G= 1550 nm 04= 100 µm 3J03= 85 µm x 10 µm 3J09= 225 µm x 10 µm Diode Configuration 1S= single stack 2S= double stack Fiber core/cladding Fiber NA 10/22= 105/125 µm 0.22 40/22= 400/440 µm 0.22 62/27= 62.5/125 µm 0.27 Connector 0= none F= ferule FC= FC/PC FA= FC/APC SM= SMA 905 Note: other fiber types, lengths, and connectors are available upon request. Please contact us for further details. Package FP Fiber Pigtailed L 50 MINI 36`1 14 1.27 Ø6.5 1.5 1 1 2 3 Ferrule Ø2.5mm 14.6 2.54 4.10 Pin Out: 1- LD Anode (+), 2- NC, 3- LD Cathode (-) Case, 5

Product Changes LASER COMPONENTS reserves the right to make changes to the product(s) or information contained herein without notice. No liability is assumed as a result of their use or application. Ordering Information Products can be ordered directly from LASER COMPONENTS or its representatives. For a complete listing of representatives, visit our website at Custom designed products are available on request. Laser Safety Personal Hazard: Depending on the mode of operation, these devices emit highly concentrated non visible infrared light which can be hazardous to the human eye. Products which incorporate these devices have to follow the safety precautions given in IEC 60825-1 Safety of laser products. Handling Precautions: Products are subject to the risks normally associated with sensitive electronic devices including static discharge, transients, and overload. MAX. PEAK POWER 400 WATTS WAVELENGTH 905 nm MAX. PEAK POWER 200 WATTS WAVELENGTH 1550 nm 602/16 / V9 / HW / lcc/pigtailed-pld