Freescale Semiconductor Technical Data Document Number: MMRF--4N Rev., /4 RF ower LDMOS Transistors N--Channel nhancement--mode Lateral MOSFTs These W symmetrical Doherty RF power LDMOS transistors are designed for cellular base station applications covering the frequency range of 7 to 96 MHz. The transistors are also suitable for wideband power amplifier applications from 6 to MHz and saturated power levels up to 5 watts. Typical Doherty Single--Carrier W--CDMA erformance: V DD =48Vdc, I DQA = 86 ma, V GSB =.9Vdc, out = W Avg., Input Signal AR = 9.9 db @.% robability on CCDF. MMRF -4NR MMRF -4GNR 7 96 MHz, W AVG., 48 V RF OWR LDMOS TRANSISTORS Frequency G ps (db) (%) Output AR (db) ACR (dbc) 9 MHz 9.5 48.5 7. 9. 94 MHz 9.5 49.5 7.. 96 MHz 9. 48. 7. 5.7 OM -78-4L LASTIC MMRF -4NR Features roduction Tested in a Symmetrical Doherty Configuration Greater Negative Gate--Source Voltage Range for Improved Class C Operation Designed for Digital redistortion rror Correction Systems In Tape and Reel. R Suffix = 5 Units, mm Tape Width, --inch Reel. OM -78G -4L LASTIC MMRF -4GNR Carrier RF ina /V GSA RF outa /V DSA RF inb /V GSB 4 RF outb /V DSB eaking (Top View) Note: xposed backside of the package is the source terminal for the transistors. Figure. in Connections, 4. All rights reserved. MMRF -4NR MMRF -4GNR
Table. Maximum Ratings Rating Symbol Value Unit Drain--Source Voltage V DSS.5, +5 Vdc Gate--Source Voltage V GS 6., + Vdc Operating Voltage V DD 55, + Vdc Storage Temperature Range T stg 65 to +5 C Case Operating Temperature Range T C 4 to +5 C Operating Junction Temperature Range (,) T J 4 to +5 C Table. Thermal Characteristics Characteristic Symbol Value (,) Unit Thermal Resistance, Junction to Case Case Temperature 86 C, W W--CDMA, 48 Vdc, I DQA = 86 ma, V GSB =.9 Vdc, 94 MHz Table. SD rotection Characteristics Human Body Model (per JSD--A4) Machine Model (per IA/JSD--A5) Charge Device Model (per JSD--C) Table 4. Moisture Sensitivity Level Test Methodology R JC.45 C/W Class Test Methodology Rating ackage eak Temperature Unit er JSD--A, IC/JDC J--STD-- 6 C Table 5. lectrical Characteristics (T A =5 C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Off Characteristics (4) Zero Gate Voltage Drain Leakage Current (V DS = 5 Vdc, V GS =Vdc) I DSS Adc C A IV Zero Gate Voltage Drain Leakage Current (V DS =48Vdc,V GS =Vdc) Gate--Source Leakage Current (V GS =5Vdc,V DS =Vdc) On Characteristics (4) Gate Threshold Voltage (V DS =Vdc,I D = 46 Adc) Gate Quiescent Voltage (V DD =48Vdc,I DA = 86 madc, Measured in Functional Test) Drain--Source On--Voltage (V GS =Vdc,I D =.Adc) I DSS Adc I GSS Adc V GS(th)..8. Vdc V GS(Q)..5. Vdc V DS(on)... Vdc. Continuous use at maximum temperature will affect MTTF.. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product.. Refer to AN955, Thermal Measurement Methodology of RF ower Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/ Application Notes -- AN955. 4. ach side of device measured separately. (continued) MMRF -4NR MMRF -4GNR
Table 5. lectrical Characteristics (T A =5 C unless otherwise noted) (continued) Characteristic Symbol Min Typ Max Unit Functional Tests (,,) (In Freescale Doherty Test Fixture, 5 ohm system) V DD =48Vdc,I DQA = 86 ma, V GSB =.9Vdc, out = W Avg., f = 9 MHz, Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal AR = 9.9 db @.% robability on CCDF. ACR measured in.84 MHz Channel Bandwidth @ 5 MHzOffset. ower Gain G ps 8.5 9.5.5 db Drain fficiency 45. 48.5 % Output eak--to--average Ratio @.% robability on CCDF AR 6.6 7. db Adjacent Channel ower Ratio ACR 9. 7. dbc Load Mismatch (In Freescale Test Fixture, 5 ohm system) I DQA = 86 ma, V GSB =.9Vdc,f=94MHz VSWR : at 5 Vdc, 5 W ulsed Output ower No Device Degradation ( db Input Overdrive from W ulsed Rated ower) Typical erformances () (In Freescale Doherty Test Fixture, 5 ohm system) V DD =48Vdc,I DQA = 86 ma, V GSB =.9 Vdc, 9--96 MHz Bandwidth out @ db Compression oint, CW db W out @ db Compression oint (4) db 5 W AM/M (Maximum value measured at the db compression point across the 9--96 MHz frequency range) VBW Resonance oint (IMD Third Order Intermodulation Inflection oint) VBW res 4 MHz Gain Flatness in 4 MHz Bandwidth @ out = W Avg. G F. db Gain Variation over Temperature (-- C to+85 C) Output ower Variation over Temperature (-- C to+85 C) G. db/ C db.75 db/ C. art internally input matched.. Measurement made with device in a symmetrical Doherty configuration.. Measurement made with device in straight lead configuration before any lead forming operation is applied. 4. db = avg + 7. db where avg is the average output power measured using an unclipped W--CDMA single--carrier input signal where output AR is compressed to 7. db @.% probability on CCDF. MMRF -4NR MMRF -4GNR
V GGA C5 C4 -- C6 V DDA C4 C5 C R Z R C5 C C6 C C7 C C8 R CUT OUT ARA C C C9 C8 C6 C C C7 C7 C C9 C C C -- C4 V GGB V DDB Figure. MMRF -4NR Test Circuit Component Layout Table 6. MMRF -4NR Test Circuit Component Designations and Values art Description art Number Manufacturer C, C6, C, C pfchip Capacitors ATCBJT5XT ATC C, C7, C7, C 4. pf Chip Capacitors ATCB4RCT5XT ATC C, C8 6.8 pf Chip Capacitors ATCB6R8CT5XT ATC C4, C9. C4, C 47 pf Chip Capacitors ATCB47JT5XT ATC C5, C. F Chip Capacitors C5X7RH5K5AB TDK C, C8 pf Chip Capacitors ATCBJT5XT ATC C, C9 8. pf Chip Capacitors ATCB8RCT5XT ATC C5, C F Chip Capacitors C575X7SA6MKB TDK C6, C4 F, V lectrolytic Capacitors MCGRV7M6X6-RH Multicomp C5.5 pf Chip Capacitor ATCBR5BT5XT ATC C6. pf Chip Capacitor ATCBRBT5XT ATC C7.8 pf Chip Capacitor ATCBR8BT5XT ATC R, R.5, /4 W Chip Resistors RC6FR-7R5L Yageo R 5, W Termination RF-7575N6Z5- Anaren Z 8-- MHz Band, 9, db Hybrid Coupler XC9-S Anaren CB Rogers RO45B,., r =.66 MTL MMRF -4NR MMRF -4GNR 4
TYICAL CHARACTRISTICS 6 G ps, OWR GAIN (db) 9 8 7 6 5 4 8 G ps V DD =48Vdc, out = W (Avg.) I DQA = 86 ma, V GSB =.9Vdc Single--Carrier W--CDMA.84 MHz Channel Bandwidth ARC 5 4 -- --4 --7 -- Input Signal AR = 9.9 db @.% -- robability on CCDF ACR --6 84 86 88 9 9 94 96 98, DRAIN FFICINCY (%) ACR (dbc) -- -- --4 --5 --6 --7 ARC (db) f, FRQUNCY (MHz) Figure. Single -Carrier Output eak -to -Average Ratio Compression (ARC) Broadband erformance @ out = Watts Avg. IMD, INTRMODULATION DISTORTION (dbc) --5 V DD =48Vdc, out = 6 W (), I DQA = 86 ma V GSB =.9 Vdc, Two--Tone Measurements --5 (f + f)/ = Center Frequency of 94 MHz IM--L IM--U --5 --45 --55 IM5--U IM7--U IM5--L IM7--L --65 TWO--TON SACING (MHz) Figure 4. Intermodulation Distortion roducts versus Two -Tone Spacing G ps, OWR GAIN (db) 8 6 4 OUTUT COMRSSION AT.% ROBABILITY ON CCDF (db) -- -- V DD =48Vdc,I DQA = 86 ma, V GSB =.9Vdc f = 94 MHz, Single--Carrier W--CDMA db=4.4w db=78w -- db = 8.7 W --4 ARC.84 MHz Channel Bandwidth, Input Signal AR = 9.9 db @.% robability on CCDF --5 5 7 9 G ps ACR 6 5 4 RAIN FFICINCY (%) --5 -- --5 -- --5 --4 --45 ACR (dbc) out, OUTUT OWR (WATTS) Figure 5. Output eak -to -Average Ratio Compression (ARC) versus Output ower MMRF -4NR MMRF -4GNR 5
TYICAL CHARACTRISTICS G ps, OWR GAIN (db) 4 8 6 4 V DD =48Vdc,I DQA = 86 ma V GSB =.9 Vdc, Single--Carrier W--CDMA,.84 MHz Channel Bandwidth 96 MHz 96 MHz ACR 9 MHz 94 MHz G ps 9 MHz 96 MHz out, OUTUT OWR (WATTS) AVG. 94 MHz Input Signal AR = 9.9 db @.% robability on CCDF Figure 6. Single -Carrier W -CDMA ower Gain, Drain fficiency and ACR versus Output ower 6 5 4, DRAIN FFICINCY (%) -- -- -- --4 --5 --6 --7 ACR (dbc) 8 6 V DD =48Vdc in =dbm I DQA = 86 ma, V GSB =.9Vdc Gain GAIN (db) 4 8 65 7 75 8 85 9 95 5 f, FRQUNCY (MHz) Figure 7. Broadband Frequency Response MMRF -4NR MMRF -4GNR 6
Table 7. Carrier Side Load ull erformance Maximum ower Tuning V DD =48Vdc,I DQ = 86 ma, ulsed CW, sec(on), % Duty Cycle f (MHz) Z source Z in Max Output ower db Z () load Gain (db) (dbm) (W) 9.9 j.65. + j.4.84 + j.. 54. 6 59.9 4 94.54 j4..49 + j.84.85 + j.. 54. 58 59.9 4 96.9 j4.64.76 + j4..77 + j.. 54. 59 59.8 5 (%) AM/M f (MHz) Z source Z in Max Output ower db Z () load Gain (db) (dbm) (W) 9.9 j.65.9 + j.66. j. 9. 54.8 6. 9 94.54 j4..45 + j4..4 j. 9. 54.8 99 6.8 8 96.9 j4.64.74 + j4.6.97 j. 9. 54.8 6.6 9 () Load impedance for optimum db power. () Load impedance for optimum db power. Z source = Measured impedance presented to the input of the device at the package reference plane. Z in = Impedance as measured from gate contact to ground. Z load = Measured impedance presented to the output of the device at the package reference plane. (%) AM/M Table 8. Carrier Side Load ull erformance Maximum Drain fficiency Tuning V DD =48Vdc,I DQ = 86 ma, ulsed CW, sec(on), % Duty Cycle f (MHz) Z source Z in Max Drain fficiency db Z () load Gain (db) (dbm) (W) 9.9 j.65. + j.8.5 + j.85 4. 5.5 4 7.8 94.54 j4..7 + j4.4.4 + j.84 4. 5.4 8 7.9 96.9 j4.64.6 + j4.68.46 + j.6.8 5. 64 7.6 (%) AM/M f (MHz) Z source Z in Max Drain fficiency db Z () load Gain (db) (dbm) (W) 9.9 j.65. + j.95.9 + j.5.5 5. 7 7.6 5 94.54 j4..8 + j4.45.74 + j.57.7 5.9 97 7.8 7 96.9 j4.64.66 + j4.94.59 + j.48.5 5. 6 7. 7 () Load impedance for optimum db efficiency. () Load impedance for optimum db efficiency. Z source = Measured impedance presented to the input of the device at the package reference plane. Z in = Impedance as measured from gate contact to ground. Z load = Measured impedance presented to the output of the device at the package reference plane. (%) AM/M Input Load ull Tuner and Test Circuit Device Under Test Output Load ull Tuner and Test Circuit Z source Z in Z load MMRF -4NR MMRF -4GNR 7
Table 9. eaking Side Load ull erformance Maximum ower Tuning V DD =48Vdc,V GSB =.9Vdc, ulsed CW, sec(on), % Duty Cycle f (MHz) Z source Z in Max Output ower db Z () load Gain (db) (dbm) (W) 9.9 j.65. + j.4.5 + j.7 6.8 54.7 94 66.5 5 94.54 j4..44 + j.87.44 + j. 6.9 54.6 9 66.9 5 96.9 j4.64.64 + j4.4.58 + j.4 7. 54.5 8 66.5 5 (%) AM/M f (MHz) Z source Z in Max Output ower db Z () load Gain (db) (dbm) (W) 9.9 j.65.8 + j.69.68 j.6 4.7 55. 5 66.8 9 94.54 j4..4 + j4.5.6 + j. 4.9 55. 68. 96.9 j4.64.6 + j4.66.7 + j.4 4.9 55. 5 66.8 () Load impedance for optimum db power. () Load impedance for optimum db power. Z source = Measured impedance presented to the input of the device at the package reference plane. Z in = Impedance as measured from gate contact to ground. Z load = Measured impedance presented to the output of the device at the package reference plane. (%) AM/M Table. eaking Side Load ull erformance Maximum Drain fficiency Tuning V DD =48Vdc,V GSB =.9 Vdc, ulsed CW, sec(on), % Duty Cycle f (MHz) Z source Z in Max Drain fficiency db Z () load Gain (db) (dbm) (W) 9.9 j.65. + j.9.8 + j.79 7.5 5.4 74 78.9 9 94.54 j4..7 + j.8.5 + j. 7.6 5. 8.4 5 96.9 j4.64.4 + j4.7.4 + j. 7.6 5. 8.6 6 (%) AM/M f (MHz) Z source Z in Max Drain fficiency db Z () load Gain (db) (dbm) (W) 9.9 j.65. + j.66.7 + j.45 5.5 5.6 77. 94.54 j4.. + j4..86 + j.49 5.7 5.6 78.9 6 96.9 j4.64.5 + j4.6.7 + j.64 5.8 5.4 8 78.7 7 () Load impedance for optimum db efficiency. () Load impedance for optimum db efficiency. Z source = Measured impedance presented to the input of the device at the package reference plane. Z in = Impedance as measured from gate contact to ground. Z load = Measured impedance presented to the output of the device at the package reference plane. (%) AM/M Input Load ull Tuner and Test Circuit Device Under Test Output Load ull Tuner and Test Circuit Z source Z in Z load MMRF -4NR MMRF -4GNR 8
db - TYICAL CARRIR SID LOAD ULL CONTOURS 94 MHz IMAGINARY.5.5.5 5 5.5 5.5 5 5.5 5 5 IMAGINARY.5.5.5 56 58 66 6 7 68 64 6 54 --.5 5.5 5 5.5 --.5.5.5 RAL Figure 8. db Load ull Output ower Contours (dbm) 58 56 --.5 --.5.5.5 RAL Figure 9. db Load ull fficiency Contours (%) IMAGINARY.5.5.5 5 4.5 4.5.5 IMAGINARY.5.5.5 --4 -- -- --8 --6 --4 -- -- --.5.5 --.5 --.5.5.5 RAL Figure. db Load ull Gain Contours (db) --.5.5.5 RAL Figure. db Load ull AM/M Contours NOT: = Maximum Output ower Gain Drain fficiency Linearity Output ower = Maximum Drain fficiency MMRF -4NR MMRF -4GNR 9
db - TYICAL CARRIR SID LOAD ULL CONTOURS 94 MHz IMAGINARY.5 5 5.5 5 5.5.5 5 5.5.5 54 54.5 --.5 5.5 --.5.5.5 RAL Figure. db Load ull Output ower Contours (dbm) IMAGINARY 56.5 6 58.5 7 68 66.5 64 6 6 58 --.5 56 --.5.5.5 RAL Figure. db Load ull fficiency Contours (%) IMAGINARY.5.5.5.5.5.5 IMAGINARY.5.5.5 -- --8 --6 --4 -- -- --8 --.5 8.5 9 9.5 --.5 --6 --.5.5.5 RAL Figure 4. db Load ull Gain Contours (db) --.5.5.5 RAL Figure 5. db Load ull AM/M Contours NOT: = Maximum Output ower Gain = Maximum Drain fficiency Drain fficiency Linearity Output ower MMRF -4NR MMRF -4GNR
db - TYICAL AKING SID LOAD ULL CONTOURS 94 MHz IMAGINARY 5.5 5 5.5.5 5 5.5.5.5 5 54.5 54 --.5 5.5 --.5.5.5.5 RAL Figure 6. db Load ull Output ower Contours (dbm) IMAGINARY.5 78.5 8 76 7 68 74 7.5 66 --.5 --.5.5.5.5 RAL Figure 7. db Load ull fficiency Contours (%) IMAGINARY 6.5.5 8.5 8.5 7.5.5 7 6.5 --.5 5.5 6 4.5 5 --.5.5.5.5 RAL Figure 8. db Load ull Gain Contours (db) IMAGINARY -- --4.5 --6 -- -- --6 --4 --.5 --4 --8.5 --.5 --.5.5.5.5 RAL Figure 9. db Load ull AM/M Contours Gain Drain fficiency Linearity Output ower NOT: = Maximum Output ower = Maximum Drain fficiency MMRF -4NR MMRF -4GNR
db - TYICAL AKING SID LOAD ULL CONTOURS 94 MHz IMAGINARY.5.5.5 --.5 5 5.5 5 5.5 5 5.5 54 54.5 55 IMAGINARY.5.5.5 --.5 78 76 74 7 7 64 68 66 6 --.5.5.5.5 RAL Figure. db Load ull Output ower Contours (dbm) --.5.5.5.5 RAL Figure. db Load ull fficiency Contours (%) IMAGINARY.5 6.5 5.5.5 5 4.5 --.5.5.5 4 --.5.5.5.5 RAL Figure. db Load ull Gain Contours (db) IMAGINARY.5.5.5 --.5 --4 --4 --8 --4 --6 --.5.5.5.5 RAL -- -- --8 --6 Figure. db Load ull AM/M Contours NOT: = Maximum Output ower Gain Drain fficiency Linearity Output ower = Maximum Drain fficiency MMRF -4NR MMRF -4GNR
ACKAG DIMNSIONS MMRF -4NR MMRF -4GNR
MMRF -4NR MMRF -4GNR 4
MMRF -4NR MMRF -4GNR 5
MMRF -4NR MMRF -4GNR 6
MMRF -4NR MMRF -4GNR 7
MMRF -4NR MMRF -4GNR 8
RODUCT DOCUMNTATION AND SOFTWAR Refer to the following documents, software and tools to aid your design process. Application Notes AN955: Thermal Measurement Methodology of RF ower Amplifiers ngineering Bulletins B: Using Data Sheet Impedances for RF LDMOS Devices Software lectromigration MTTF Calculator For Software and Tools, do a art Number search at http://www.freescale.com, and select the art Number link. Go to the Software & Tools tab on the part s roduct Summary page to download the respective tool. RVISION HISTORY The following table summarizes revisions to this document. Revision Date Description Feb. 4 Initial Release of Data Sheet MMRF -4NR MMRF -4GNR 9
How to Reach Us: Home age: freescale.com Web Support: freescale.com/support Information in this document is provided solely to enable system and software implementers to use Freescale products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits based on the information in this document. Freescale reserves the right to make changes without further notice to any products herein. Freescale makes no warranty, representation, or guarantee regarding the suitability of its products for any particular purpose, nor does Freescale assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. Typical parameters that may be provided in Freescale data sheets and/or specifications can and do vary in different applications, and actual performance may vary over time. All operating parameters, including typicals, must be validated for each customer application by customer s technical experts. Freescale does not convey any license under its patent rights nor the rights of others. Freescale sells products pursuant to standard terms and conditions of sale, which can be found at the following address: freescale.com/salestermsandconditions. Freescale and the Freescale logo are trademarks of, Reg. U.S. at. & Tm. Off. Airfast is a trademark of All other product or service names are the property of their respective owners. 4 MMRF -4NR MMRF -4GNR Document Number: MMRF--4N Rev., /4