Dual P-Channel MOSFET -60V, -12A, 68mΩ

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Dual P-Channel MOSFET -60V, -12A, 68mΩ FEATURES Fast switching Low thermal resistance package Low profile package Pb-free plating RoHS compliant Halogen-free package KEY PERFORMANCE PARAMETERS PARAMETER VALUE UNIT V DS -60 V R DS(on) (max) V GS = -10V 68 V GS = -4.5V 110 mω Q g 16.4 nc APPLICATION Power Supply Motor control PDFN56 Dual Notes: Moisture sensitivity level: level 3. Per J-STD-020 Dual P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (T A = 25 C unless otherwise noted) PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS -60 V Gate-Source Voltage V GS ±20 V Continuous Drain Current (Note 1) T C = 25 C I D -12 T C = 100 C -8 Pulsed Drain Current (Note 2) I DM -48 A Total Power Dissipation @ T C = 25 C P DTOT 3.5 W Single Pulsed Avalanche Energy (Note 3) E AS 7.2 mj Single Pulsed Avalanche Current (Note 3) I AS 12 A Operating Junction and Storage Temperature Range T J, T STG - 55 to +150 C A THERMAL PERFORMANCE PARAMETER SYMBOL LIMIT UNIT Junction to Case Thermal Resistance R ӨJC 4.5 C/W Junction to Ambient Thermal Resistance R ӨJA 85 C/W Notes: R ӨJA is the sum of the junction-to-case and case-to-ambient thermal resistances. The case thermal reference is defined at the solder mounting surface of the drain pins. R ӨJA is guaranteed by design while R ӨCA is determined by the user s board design. R ӨJA shown below for single device operation on FR-4 PCB in still air Document Number:DS_P0000162 1 Version: A15

ELECTRICAL SPECIFICATIONS (T A = 25 C unless otherwise noted) PARAMETER CONDITIONS SYMBOL MIN TYP MAX UNIT (Note 4) Static Drain-Source Breakdown Voltage V GS = 0V, I D = -250µA BV DSS -60 -- -- V Gate Threshold Voltage V DS = V GS, I D = -250µA V GS(TH) -1.2-1.6-2.5 V Gate Body Leakage V GS = ±20V, V DS = 0V I GSS -- -- ±100 na Zero Gate Voltage Drain Current Drain-Source On-State Resistance V DS = -60V, V GS = 0V I DSS -- -- -1 V DS = -48V, Tc = 125ºC -- -- -10 V GS = -10V, I D = -6A R DS(on) -- 54 68 V GS = -4.5V, I D = -3A -- 90 110 Forward Transconductance V DS = -10V, I D = -6A g fs -- 8.5 -- S (Note 5) Dynamic Total Gate Charge Q g -- 16.4 -- V DS = -30V, I D = -6A, Gate-Source Charge Q gs -- 2.8 -- V GS = -10V Gate-Drain Charge Q gd -- 3.6 -- Input Capacitance C iss -- 870 -- V DS = -30V, V GS = 0V, Output Capacitance C oss -- 70 -- f = 1.0MHz Reverse Transfer Capacitance C rss -- 42 -- (Note 6) Switching Turn-On Delay Time t d(on) -- 8.3 -- Turn-On Rise Time V DD = -30V, I D = -1A, t r -- 42.4 -- Turn-Off Delay Time R GEN =6Ω t d(off) -- 64.6 -- Turn-Off Fall Time t f -- 16.4 -- (Note 4) Source-Drain Diode Maximum Continuous Drain-Source Diode Forward Current Maximum Pulse Drain-Source Diode Forward Current Integral reverse diode in the MOSFET µa mω nc I S -- -- -12 A I SM -- -- -48 A Diode-Source Forward Voltage V GS = 0V, I S = -1A V SD -- -- -1 V Notes: 1. Current limited by package 2. Pulse width limited by the maximum junction temperature 3. L = 0.1mH, I AS = -12A, V DD = -25V, R G = 25Ω, Starting T J = 25 o C 4. Pulse test: PW 300µs, duty cycle 2% 5. For DESIGN AID ONLY, not subject to production testing. 6. Switching time is essentially independent of operating temperature. pf ns Document Number:DS_P0000162 2 Version: A15

ORDERING INFORMATION (EXAMPLE) PART NO. PACKAGE PACKING TSM680P06DPQ56 RLG PDFN56 2,500pcs / 13 Reel Note: 1. Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC 2. Halogen-free according to IEC 61249-2-21 definition Document Number:DS_P0000162 3 Version: A15

-ID, Continuous Drain Current (A) TSM680P06D CHARACTERISTICS CURVES (T C = 25 C unless otherwise noted) Continuous Drain Current vs. T C Normalized R DS(ON) vs. T J T C, Case Temperature ( ) T J, Junction Temperature ( ) Normalized Vth vs. T J Gate Charge Waveform -VGS, Gate to Source Voltage (V) Normalized Thermal Response -ID, Continuous Drain Current (A) Normalized Gate Threshold Voltage Normalized On Resistance T J, Junction Temperature ( ) Normalized Transient Impedance Q g, Gate Charge (nc) Maximum Safe Operation Area Square Wave Pulse Duration (s) -V DS, Drain to Source Voltage (V) Document Number:DS_P0000162 4 Version: A15

PACKAGE OUTLINE DIMENSIONS (Unit: Millimeters) PDFN56 Dual SUGGESTED PAD LAYOUT (Unit: Millimeters) MARKING DIAGRAM Y = Year Code M = Month Code for Halogen Free Product O =Jan P =Feb Q =Mar R =Apr ` S =May T =Jun U =Jul V =Aug W =Sep X =Oct Y =Nov Z =Dec L = Lot Code (1~9, A~Z) Document Number:DS_P0000162 5 Version: A15

Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. Document Number:DS_P0000162 6 Version: A15