Features. Parameter Frequency (GHz) Min. Typ. Max. Units GHz GHz. Attenuation Range GHz 31 db

Similar documents
Features. Parameter Frequency (GHz) Min. Typ. Max. Units. Attenuation Range GHz 31 db. All States db db. 0.

Features. = +25 C, With Vdd = +5V & Vctl = 0/+5V (Unless Otherwise Noted)

Features. = +25 C, Vdd = +5V, Idd = 63 ma

Features. = +25 C, 50 ohm system. DC - 12 GHz: DC - 20 GHz: DC - 12 GHz: GHz: ns ns Input Power for 0.25 db Compression (0.

Features. = +25 C, 50 ohm system. DC - 12 GHz: DC - 20 GHz: DC - 12 GHz: GHz: ns ns Input Power for 0.25 db Compression (0.

Features. = +25 C, Vdd = 5V, Idd = 200 ma*

HMC814. GaAs MMIC x2 ACTIVE FREQUENCY MULTIPLIER, GHz OUTPUT. Features. Typical Applications. Functional Diagram. General Description

Insertion Loss vs. Temperature TEL: FAX: v4.18 Relative Attenuation ATTENUATOR, DC - 2 GHz 1 INSERTION L

Features. = +25 C, Vdd = +6V, Idd = 375mA [1]

HMC465 AMPLIFIERS- DRIVERS & GAIN BLOCKS - CHIP. GaAs phemt MMIC MODULATOR DRIVER AMPLIFIER, DC - 20 GHz. Electrical Specifications, T A.

HMC650 TO HMC658 v

Features. The HMC985 is ideal for: = +25 C, See Test Conditions. Parameter Condition Min. Typ. Max. Units db. Output Return Loss 13 db

HMC998. Amplifiers - Linear & Power - Chip. GaAs phemt MMIC 2 WATT POWER AMPLIFIER, GHz. Electrical Specifications, T A.

Features. DC - 2 GHz GHz Supply Current (Idd) 400 ma

Features. = +25 C Vdd = Vdd1, Vdd2, Vdd3, Vdd4, Vdd5, Vdd6, Vdd7, Vdd8 = +6V, Idd = 1400 ma [1]

Features. = +25 C, Vdd= 5V, Idd= 60 ma*

Customised Pack Sizes / Qtys. Support for all industry recognised supply formats: o o o. Waffle Pack Gel Pak Tape & Reel

Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED

Features. = +25 C, Vdd = 5V, Idd = 85mA*

Features. = +25 C, Vdd = Vdd1 = Vdd2 = Vdd3 = Vdd4 = Vdd5 = +7V, Idd = 1200mA [1]

HMC576 FREQUENCY MULTIPLIERS - ACTIVE - CHIP. GaAs MMIC x2 ACTIVE FREQUENCY MULTIPLIER, GHz OUTPUT. Features. Typical Applications

Features. = +25 C, Vdd1, Vdd2 = +5V

Features OUT E S T CODE. = +25 C, Vdd= 8V, Idd= 60 ma*

Features. = +25 C, With 0/-5V Control, 50 Ohm System

Features. = +25 C, Vdd= +5V

Features. = +25 C, With 0/-5V Control, 50 Ohm System

= +25 C, IF= 100 MHz, LO = +15 dbm*

Features. = +25 C, Vdd 1, 2, 3, 4 = +3V

HMC985A. attenuators - analog - Chip. GaAs MMIC VOLTAGE - VARIABLE ATTENUATOR, GHz. Features. Typical Applications. General Description

Features. = +25 C, Vdd= 2V [1], Idd = 55mA [2]

Features. = +25 C, Vdd 1, 2, 3 = +3V

Features. Parameter Frequency Min. Typ. Max. Units GHz GHz GHz GHz GHz GHz

HMC561 FREQUENCY MULTIPLIER - ACTIVE - CHIP. Electrical Specifications, T A. Features. Typical Applications. General Description. Functional Diagram

Features OBSOLETE. Output Third Order Intercept (IP3) [2] dbm Total Supply Current ma

Features dbm

Features OBSOLETE. = +25 C, With 0/-5V Control, 50 Ohm System. DC - 10 GHz DC - 6 GHz DC - 15 GHz. DC - 6 GHz DC - 15 GHz

Features. = +25 C, Vdd = +3V

Features OBSOLETE. = +25 C, 5 ma Bias Current

Features. = +25 C, Vdd 1, 2, 3 = +3V

Features. = +25 C, Vdd= +5V, Idd = 66mA

Features. = +25 C, Vdd 1, 2, 3 = +3V

Features. = +25 C, Vdd 1, 2, 3 = +3V

Features. = +25 C, Vdd = +10V, Idd = 350mA

Features. Noise Figure db Supply Current (Idd) ma Supply Voltage (Vdd) V

HMC-SDD112 SWITCHES - CHIP. GaAs PIN MMIC SPDT SWITCH GHz. Typical Applications. Features. General Description. Functional Diagram

HMC906A. Amplifiers - Linear & Power - CHIP. Electrical Specifications, T A. Typical Applications. Features. General Description. Functional Diagram

HMC994A AMPLIFIERS - LINEAR & POWER - CHIP. GaAs phemt MMIC 0.5 WATT POWER AMPLIFIER, DC - 30 GHz. Features. Typical Applications

Features. = +25 C, 50 Ohm System

Features. Gain: 15.5 db. = +25 C, Vdd = 5V

HMC-APH596 LINEAR & POWER AMPLIFIERS - CHIP. GaAs HEMT MMIC MEDIUM POWER AMPLIFIER, GHz. Typical Applications. Features

Features. = +25 C, Vdd = 5V

Features. Parameter Min. Typ. Max. Units. Frequency Range 3 6 GHz Insertion Loss* db. Input Return Loss* 12 db

Features. Parameter Min. Typ. Max. Units. Frequency Range 8 12 GHz Insertion Loss* 5 7 db. Input Return Loss* 10 db

Features. = +25 C, Vdd= +8V *

Features. = 25 C, IF = 3 GHz, LO = +16 dbm

Features. = +25 C, LO Drive = +15 dbm* Parameter Min. Typ. Max. Units Frequency Range, RF & LO 4-8 GHz Frequency Range, IF DC - 3 GHz

Customised Pack Sizes / Qtys. Support for all industry recognised supply formats: o o o. Waffle Pack Gel Pak Tape & Reel

HMC397 DRIVER & GAIN BLOCK AMPLIFIERS - CHIP. InGaP HBT GAIN BLOCK MMIC AMPLIFIER, DC - 10 GHz. Features. Typical Applications. General Description

HMC-AUH232 MICROWAVE & OPTICAL DRIVER AMPLIFIERS - CHIP. GaAs HEMT MMIC MODULATOR DRIVER AMPLIFIER, DC - 43 GHz. Typical Applications.

GaAs phemt MMIC Low Noise Amplifier, 0.3 GHz to 20 GHz HMC1049

GaAs, phemt, MMIC, Power Amplifier, HMC1126. Data Sheet FEATURES FUNCTIONAL BLOCK DIAGRAM APPLICATIONS GENERAL DESCRIPTION

Features. = +25 C, 50 Ohm System. Return Loss (Input and Output) 5-18 GHz 8 db

TEL: FAX: v1.77 HMC64 Insertion Loss, Major States Only Normalized Loss, Major States Only 4 INSERTION LOSS (db)

Features. Gain: 12 db. 50 Ohm I/O s

14 GHz to 32 GHz, GaAs, MMIC, Double Balanced Mixer HMC292A

GaAs, phemt, MMIC, Power Amplifier, 2 GHz to 50 GHz HMC1126

Features. Output Third Order Intercept (IP3) [2] dbm Power Added Efficiency %

Features. Parameter Frequency (GHz) Min. Typ. Max. Units GHz GHz GHz. Attenuation Range GHz 15.

Features. = +25 C, 50 Ohm System, Vcc = 5V

81 GHz to 86 GHz, E-Band Power Amplifier With Power Detector HMC8142

Features. Parameter Frequency (GHz) Min. Typ. Max. Units GHz GHz GHz. Attenuation Range GHz 15.

2 GHz to 30 GHz, GaAs, phemt, MMIC, Low Noise Amplifier HMC8402

20 GHz to 44 GHz, GaAs, phemt, MMIC, Low Noise Amplifier HMC1040CHIPS

71 GHz to 76 GHz, 1 W E-Band Power Amplifier with Power Detector ADMV7710

= +25 C, With Vee = -5V & VCTL= 0/-5V

DC to 28 GHz, GaAs phemt MMIC Low Noise Amplifier HMC8401

71 GHz to 76 GHz, E-Band Variable Gain Amplifier HMC8120

0.1 GHz to 18 GHz, GaAs SP4T Switch HMC641A

71 GHz to 76 GHz, 1 W E-Band Power Amplifier with Power Detector ADMV7710

50 GHz to 95 GHz, GaAs, phemt, MMIC, Wideband Power Amplifier ADPA7001CHIPS

= +25 C, With Vee = -5V & Vctl = 0/-5V

HMC6590. transimpedance amplifiers - chip. 43 Gbps Transimpedance Amplifier. Typical Applications. Features. Functional Diagram. General Description

Customised Pack Sizes / Qtys. Support for all industry recognised supply formats: o o o. Waffle Pack Gel Pak Tape & Reel

Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED

Features DC DC DC - 14 DC Min Attenuation Attenuation > 5 db Min Attenuation Attenuation > 10 db

Features. = +25 C, With Vee = -5V & VCTL= 0/-5V. Attenuation Range DC GHz 31.5 db

Parameter Frequency (GHz) Min. Typ. Max. Units DC GHz GHz GHz Attenuation Range DC GHz 31.5 db

Passive MMIC 30GHz Equalizer

Parameter Frequency Min. Typ. Max. Units GHz GHz Attenuation Range GHz 31.5 db

HMC540SLP3E v db LSB SILICON MMIC 4-BIT DIGITAL POSITIVE CONTROL ATTENUATOR, GHz

Features. = +25 C, With Vdd = Vdd1 = +5V, Vss = -5V. Parameter Frequency (GHz) Min. Typ. Max. Units GHz GHz

OBSOLETE. Parameter Frequency (GHz) Min. Typ. Max. Units DC GHz GHz. Attenuation Range DC - 3 GHz 31 db

OBSOLETE. = +25 C, Vdd = Vs= +5V, Vctl= 0/ +5V. Parameter Frequency Min. Typ. Max. Units DC GHz 37. db Gain (Maximum Gain State)

Parameter Frequency (GHz) Min. Typ. Max. Units DC GHz GHz GHz GHz Attenuation Range DC - 5.

OBSOLETE. Parameter Frequency (GHz) Min. Typ. Max. Units DC GHz GHz GHz Attenuation Range DC - 5.

FEATURES DESCRIPTION ABSOLUTE MAXIMUM RATINGS. T AMB = +25 C ( Unless otherwise specified )

High Isolation GaAs MMIC Doubler

Features. DC - 18 GHz. Switching Transients DC - 18 GHz 12 mvpp

HMC307QS16G / 307QS16GE. Features OBSOLETE. = +25 C, Vee = -5V & VCTL= 0/Vee. Parameter Frequency Min. Typical Max. Units DC - 1.

Passive MMIC 26-40GHz Bandpass Filter

Transcription:

v1.511 1. LSB GaAs MMIC 5-BIT DIGITAL ATTENUATOR,.1-4 GHz Typical Applications The is ideal for: Fiber Optics & Broadband Telecom Microwave Radio & VSAT Military Radios, Radar & ECM Space Applications Functional Diagram Features 1. LSB Steps to 31 Single Positive Control Line Per Bit ±1. Typical Bit Error High Input IP3: +43 Die Size: 2.29 x.95 x.1 mm General Description The die is a broadband 5-bit GaAs IC digital attenuator MMIC chip. Covering.1 to 4 GHz, the insertion loss is less than 5 typical. The attenuator bit values are 1. (LSB), 2, 4, 8, 16 for a total attenuation of 31. Attenuation accuracy is excellent at less than ±1. typical step error with an IIP3 of +43. Five control voltage inputs, toggled between +5V and V, are used to select each attenuation state. Electrical Specifications, T A = +25 C, With Vdd = +5V, Vss = -5V & VCTL = / +5V Insertion Loss Parameter Frequency (GHz) Min. Typ. Max. Units.1-18 GHz 18-4 GHz Attenuation Range.1-4 GHz 31 Return Loss (RF1 & RF2, All Atten. States).1-4 GHz 12 Attenuation Accuracy: (Referenced to Insertion Loss) Input Power for.1 Compression Input Third Order Intercept Point (Two-Tone Input Power= Each Tone) Switching Characteristics 1. - 15 States 16-31 States trise, tfall (1/9% RF) ton/toff (5% CTL to 1/9% RF).1-4 GHz.1-4 GHz.1 -.5 ghz.5-4. GHz.1 -.5 ghz.5-4. GHz.1-4 GHz 3.5 6. 5. 7.5 ±.5 + 5% of Atten. Setting Max ±.6 + 6% of Atten. Setting Max Idd.1-4 GHz 3 5 7 ma Iss.1-4 GHz -4-6 -8 ma 2 25 4 43 6 9 ns ns - 1 For price, delivery and to place orders: Hittite Microwave Corporation, For price, delivery, 2 Alpha and Road, to place Chelmsford, orders: Analog MA Devices, 1824Inc., One Technology Way, P.O. Box 916, Norwood, MA 262-916 Phone: 978-25-3343 Fax: 978-25-3373 Phone: Order 781-329-47 On-line at www.hittite.com Application Support: Phone: 978-25-3343 Application or apps@hittite.com Support: Phone: 1-8-ANALOG-D

Insertion Loss vs. Temperature INSERTION LOSS () -1-2 -3-4 -5-6 -7-8 Input Return Loss RETURN LOSS () v1.511 +25 C +85 C -55 C -9 5 1 15 2 25 3 35 4 45 5-1 -2-3 1. LSB GaAs MMIC 5-BIT DIGITAL ATTENUATOR,.1-4 GHz Normalized Attenuation NORMALIZED ATTENUATION () Output Return Loss RETURN LOSS () -5-1 -15-2 -25-3 -35 5 1 15 2 25 3 35 4 45 5-1 -2-3 -4-4 -5 5 1 15 2 25 3 35 4 45 5-5 5 1 15 2 25 3 35 4 45 5 Bit Error vs. Attenuation State BIT ERROR () 2 1.6 1.2.8.4 -.4 -.8-1.2-1.6 1 GHz 2 GHz 4 GHz -2 4 8 12 16 2 24 28 32 ATTENUATION STATE () Bit Error vs. Frequency BIT ERROR () 3 2 1-1 -2 31-3 5 1 15 2 25 3 35 4 45 5 For price, delivery and to place orders: Hittite Microwave Corporation, For price, delivery, 2 Alpha and Road, to place Chelmsford, orders: Analog MA Devices, 1824Inc., One Technology Way, P.O. Box 916, Norwood, MA 262-916 Phone: 978-25-3343 Fax: 978-25-3373 Phone: Order 781-329-47 On-line at www.hittite.com Application Support: Phone: 978-25-3343 Application or apps@hittite.com Support: Phone: 1-8-ANALOG-D - 2

Relative Phase vs. Frequency 16 v1.511 1. LSB GaAs MMIC 5-BIT DIGITAL ATTENUATOR,.1-4 GHz Step Attenuation vs. Attenuation State 2.4 RELATIVE PHASE (deg) Input IP3 Over Major Attenuation States IP3 () 14 12 1 8 31 6 4 2-2 5 1 15 2 25 3 35 4 45 5 6 5 4 3 STEP ATTENUATION () 2 1.6 1.2.8.4 1 GHz 2 GHz 4 GHz -.4 4 8 12 16 2 24 28 32 ATTENUATION STATE () Input IP3 vs. Temperature (Minimum Attenuation State) IP3 () 6 5 4 3 +25 C +85 C -4 C 2 5 1 15 2 25 3 35 4 2.1 1 1 1 Input Power for.1 Compression 28 24 P.1 () 2 16 12 8 4.1.1 1 1 1-3 For price, delivery and to place orders: Hittite Microwave Corporation, For price, delivery, 2 Alpha and Road, to place Chelmsford, orders: Analog MA Devices, 1824Inc., One Technology Way, P.O. Box 916, Norwood, MA 262-916 Phone: 978-25-3343 Fax: 978-25-3373 Phone: Order 781-329-47 On-line at www.hittite.com Application Support: Phone: 978-25-3343 Application or apps@hittite.com Support: Phone: 1-8-ANALOG-D

v1.511 1. LSB GaAs MMIC 5-BIT DIGITAL ATTENUATOR,.1-4 GHz Bias Voltages & Currents Truth Table Vdd Vss Control Voltage State Bias Condition Low to.8v @ 1 µa High 2 to 5V @ 1 µa Absolute Maximum Ratings RF Input Power (.5 to 4 GHz) +25 Control Voltage (P to P4) Vdd +.5V Vdd +7 Vdc Vss -7 Vdc Channel Temperature 15 C Thermal Resistance (channel to die bottom) 144 C/W +5V @ 5 ma -5V @ 6 ma Storage Temperature -65 to + 15 C Operating Temperature -55 to +85 C Outline Drawing P4 16 P3 8 Control Voltage Input P2 4 P1 2 P 1 Attenuation State RF1 - RF2 High High High High High Reference I.L. High High High High Low 1 High High High Low High 2 High High Low High High 4 High Low High High High 8 Low High High High High 16 Low Low Low Low Low 31 Any Combination of the above states will provide an attenuation approximately equal to the sum of the bits selected. ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Die Packaging Information [1] Standard Alternate WP-9 (Waffle Pack) [2] [1] Refer to the Packaging Information section for die packaging dimensions. [2] For alternate packaging information contact Hittite Microwave Corporation. 1. ALL DIMENSIONS ARE IN INCHES (MILLIMETERS). 2. TYPICAL BOND PAD IS.3 SQUARE. 3. TYPICAL BOND PAD SPACING IS.6 Center TO Center EXCept AS noted. 4. BACKSIDE METALIZATION: GOLD 5. BACKSIDE METAL IS GROUND 6. BOND PAD METALIZATION: GOLD For price, delivery and to place orders: Hittite Microwave Corporation, For price, delivery, 2 Alpha and Road, to place Chelmsford, orders: Analog MA Devices, 1824Inc., One Technology Way, P.O. Box 916, Norwood, MA 262-916 Phone: 978-25-3343 Fax: 978-25-3373 Phone: Order 781-329-47 On-line at www.hittite.com Application Support: Phone: 978-25-3343 Application or apps@hittite.com Support: Phone: 1-8-ANALOG-D - 4

v1.511 1. LSB GaAs MMIC 5-BIT DIGITAL ATTENUATOR,.1-4 GHz Pad Descriptions Pad Number Function Description Interface Schematic GND 1, 9 RF1, RF2 Die bottom must be connected to RF ground. This pad is DC coupled and matched to 5 Ohm. Blocking capacitors are required if RF line potential is not equal to V. 2 Vss Negative Bias -5V 3-7 P - P4 See truth table and control voltage table. 8 Vdd Positive Bias +5V Assembly Diagram - 5 For price, delivery and to place orders: Hittite Microwave Corporation, For price, delivery, 2 Alpha and Road, to place Chelmsford, orders: Analog MA Devices, 1824Inc., One Technology Way, P.O. Box 916, Norwood, MA 262-916 Phone: 978-25-3343 Fax: 978-25-3373 Phone: Order 781-329-47 On-line at www.hittite.com Application Support: Phone: 978-25-3343 Application or apps@hittite.com Support: Phone: 1-8-ANALOG-D

v1.511 1. LSB GaAs MMIC 5-BIT DIGITAL ATTENUATOR,.1-4 GHz Mounting & Bonding Techniques for Millimeterwave GaAs MMICs The die should be attached directly to the ground plane eutectically or with conductive epoxy (see HMC general Handling, Mounting, Bonding Note). 5 Ohm Microstrip transmission lines on.127mm (5 mil) thick alumina thin film substrates are recommended for bringing RF to and from the chip (Figure 1). If.254mm (1 mil) thick alumina thin film substrates must be used, the die should be raised.15mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. One way to accomplish this is to attach the.12mm (4 mil) thick die to a.15mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane (Figure 2). Microstrip substrates should brought as close to the die as possible in order to minimize bond wire length. Typical die-to-substrate spacing is.76mm to.152 mm (3 to 6 mils). Handling Precautions Follow these precautions to avoid permanent damage. Storage: All bare die are placed in either Waffle or Gel based ESD protective containers, and then sealed in an ESD protective bag for shipment. Once the sealed ESD protective bag has been opened, all die should be stored in a dry nitrogen environment. Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid cleaning systems. Static Sensitivity: Follow ESD precautions to protect against ESD strikes. Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize inductive pickup..12mm (.4 ) Thick GaAs MMIC.76mm (.3 ) RF Ground Plane Wire Bond.127mm (.5 ) Thick Alumina Thin Film Substrate Figure 1..12mm (.4 ) Thick GaAs MMIC.76mm (.3 ) RF Ground Plane Wire Bond.15mm (.5 ) Thick Moly Tab.254mm (.1 ) Thick Alumina Thin Film Substrate Figure 2. General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers. Mounting The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy. The mounting surface should be clean and flat. Eutectic Die Attach: A 8/2 gold tin preform is recommended with a work surface temperature of 255 C and a tool temperature of 265 C. When hot 9/1 nitrogen/hydrogen gas is applied, tool tip temperature should be 29 C. DO NOT expose the chip to a temperature greater than 32 C for more than 2 seconds. No more than 3 seconds of scrubbing should be required for attachment. Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer s schedule. Wire Bonding Ball or wedge bond with.25mm (1 mil) diameter pure gold wire. Thermosonic wirebonding with a nominal stage temperature of 15 C and a ball bonding force of 4 to 5 grams or wedge bonding force of 18 to 22 grams is recommended. Use the minimum level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be started on the chip and terminated on the package or substrate. All bonds should be as short as possible <.31mm (12 mils). For price, delivery and to place orders: Hittite Microwave Corporation, For price, delivery, 2 Alpha and Road, to place Chelmsford, orders: Analog MA Devices, 1824Inc., One Technology Way, P.O. Box 916, Norwood, MA 262-916 Phone: 978-25-3343 Fax: 978-25-3373 Phone: Order 781-329-47 On-line at www.hittite.com Application Support: Phone: 978-25-3343 Application or apps@hittite.com Support: Phone: 1-8-ANALOG-D - 6