RT2568. DDR Termination Regulator. Features. General Description. Applications. Marking Information. Simplified Application Circuit

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RT2568 DDR Termination Regulator General Description The RT2568 is a sink/source tracking termination regulator. It is specifically designed for low-cost and low-external component count systems. The RT2568 possesses a high speed operating amplifier that provides fast load transient response and only requires a minimum 10μF x 3 ceramic output capacitor. The RT2568 supports remote sensing functions and all features required to power the DDRIII and Low Power DDRIII / DDRIV VTT bus termination according to the JEDEC specification. In addition, the RT2568 provides an open-drain PGOOD signal to monitor the output regulation and an signal that can be used to discharge VTT during S3 (suspend to RAM) for DDR applications. The RT2568 is available in the thermal efficient package, WDFN-10L 3x3. Marking Information 5W=YM DNN 5W= : Product Code YMDNN : Date Code Features Input Voltage Range: 1.1V to 3.5V Input Voltage Range: 2.9V to 5.5V Support Ceramic Capacitors Power Good Indicator 10mA Source/Sink Reference Output Meet DDRI, DDRII JEDEC Spec Support DDRIII, Low Power DDRIII/DDRIV VTT Applications Soft-Start Function UVLO and OCP Protection Thermal Shutdown Applications Notebook/Desktop/Server Telecom/Datacom, GSM Base Station, LCD-TV/PDP- TV, Copier/Printer, Set-Top Box Simplified Application Circuit RT2568 V IN C1 R1 R2 C2 REFIN PGOOD VOUT R3 C4 Power Good Indicator C3 SSE P C5 1

Ordering Information RT2568 Note : Richtek products are : Package Type QW : WDFN-10L 3x3 (W-Type) Lead Plating System G : Green (Halogen Free and Pb Free) RoHS compliant and compatible with the current requirements of IPC/JEDEC J-STD-020. Suitable for use in SnPb or Pb-free soldering processes. Pin Configurations REFIN VOUT P SSE (TOP VIEW) 1 2 3 4 5 11 10 9 8 7 6 WDFN-10L 3x3 PGOOD Functional Pin Description Pin No. Pin Name Pin Function 1 REFIN Reference Input. 2 Power Input of the Regulator. 3 VOUT Power Output of the Regulator. 4 P Power Ground of the Regulator. 5 SSE Voltage Sense Input for the Regulator. Connect to positive terminal of the output capacitor or the load. 6 Reference Output. Connect to through a 0.1 F ceramic capacitor. 7 9 PGOOD 10 8, 11 (Exposed Pad) Enable Control Input. For DDR VTT application, connect to SLP_S3. For other applications, use as the ON/OFF function. Power Good Open-Drain Output. Connect a pull-up resistor between this pin and pin. Control Voltage Input. Connect this pin to the 3.3V or 5V power supply. A ceramic decoupling capacitor with a value 4.7 F is required. Analog Ground. Connect to negative terminal of the output capacitor. The exposed pad must be soldered to a large PCB and connected to for maximum power dissipation. 2

Function Block Diagram REFIN Control Logic Thermal Protection Buffer + OCP - SSE PGOOD Power Good - OP + Driver + OCP - VOUT P Operation The RT2568 is a linear sink/source DDR termination regulator with current capability up to 3A. The RT2568 builds in a high-side N-MOSFET which provides current sourcing and a low-side N-MOSFET which provides current sinking. All the control circuits are supplied by the power. In normal operation, the error amplifier OP adjusts the gate driving voltage of the power MOSFET to achieve SSE voltage well tracking the REFIN voltage. Both the source and sink currents are detected by the internal sensing resistor, and the OCP function will work to limit the current to a designed value when overload happens. Furthermore, the current will be folded back to be one half if VOUT is out of the power good window. Buffer This function provides output equal to REFIN with 10mA source/sink current capability. Power Good When the SSE voltage is in the power good window and lasts for a certain delay time, then the PGOOD pin will be high impedance and the PGOOD voltage will be pulled high by the external resistor. Control Logic This block includes UVLO, REFIN UVLO and Enable/Disable functions, and provides logic control to the whole chip. Thermal Protection Both the high-side and low-side power MOSFETs will be turned off when the junction temperature is higher than typically 160 C, and be released to normal operation when junction temperature falls below 120 C typically. 3

Absolute Maximum Ratings (Note 1) Supply Voltage,, ------------------------------------------------------------------------------------------- 0.3V to 6V Input Voltage,, REFIN, SSE ----------------------------------------------------------------------------------- 0.3V to 6V Output Voltage, VOUT,, PGOOD -------------------------------------------------------------------------- 0.3V to 6V Power Dissipation, P D @ T A = 25 C WDFN-10L 3x3 ------------------------------------------------------------------------------------------------------------- 2.5W Package Thermal Resistance (Note 2) WDFN-10L 3x3, θ JA ------------------------------------------------------------------------------------------------------- 40 C/W WDFN-10L 3x3, θ JC ------------------------------------------------------------------------------------------------------- 7.5 C/W Lead Temperature (Soldering, 10 sec.) ------------------------------------------------------------------------------- 260 C Junction Temperature ----------------------------------------------------------------------------------------------------- 150 C Storage Temperature Range -------------------------------------------------------------------------------------------- 65 C to 150 C ESD Susceptibility (Note 3) HBM (Human Body Model) ---------------------------------------------------------------------------------------------- 2kV MM (Machine Model) ----------------------------------------------------------------------------------------------------- 200V CDM (Charged Device Model) ------------------------------------------------------------------------------------------ 2kV Recommended Operating Conditions (Note 4) Control Input Voltage, ------------------------------------------------------------------------------------------ 2.9V to 5.5V Supply Input Voltage, ----------------------------------------------------------------------------------------------- 1.1V to 3.5V Junction Temperature Range -------------------------------------------------------------------------------------------- 40 C to 125 C Electrical Characteristics (V IN = 1.5V, V = V CNTL = 3.3V, V REFIN = V SSE = 0.75V, C OUT = 10μF x 3, T A = 40 C to 85 C, unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit Supply Current Supply Current I V =, No Load -- 0.7 1 ma Shutdown Current ISHDN_ V = 0V, VREFIN = 0V, No Load -- 65 80 V = 0V, VREFIN > 0.4V, No Load -- 200 400 A Supply Current I V =, No Load -- 1 50 A Shutdown Current ISHDN_ V = 0V, No Load -- 0.1 50 A Output = 1.5V, VREFIN = 0.75V, IOUT = 0A -- 0.75 -- VTT Output Voltage VOUTO = 1.35V, VREFIN = 0.675V, IOUT = 0A -- 0.675 -- V = 1.2V, VREFIN = 0.6V, IOUT = 0A -- 0.6 -- IOUT < ±2A, VLDOIN = 1.5V, VOUT_OS = VOUT VOUTO 25 -- 25 VTT Output Voltage Offset VOUT_OS IOUT < ±2A, VLDOIN = 1.35V, VOUT_OS = VOUT VOUTO 25 -- 25 mv IOUT < ±2A, VLDOIN = 1.2V, VOUT_OS = VOUT VOUTO 25 -- 25 4

Parameter Symbol Test Conditions Min Typ Max Unit VOUT Source Current Limit ILIM_VOUT_SR VOUT in PGOOD Window 3 4.5 -- A VOUT Sink Current Limit ILIM_VOUT_SK VOUT in PGOOD Window 3 4.5 -- A VOUT Discharge Resistance RDISCHARGE VREFIN = 0V, VOUT = 0.3V, V = 0V -- 18 25 Power Good Comparator VSSE lower threshold with respect to -- 20 -- PGOOD Threshold VTH_PGOOD VSSE upper threshold with respect to -- 20 -- % PGOOD Hysteresis -- 5 -- PGOOD Start-Up Delay TPGDELAY1 Start-up rising delay, VSSE within PGOOD range -- 2 -- ms Output Low Voltage VLOW_PGOOD IPGOOD = 4mA -- -- 0.4 V PGOOD Falling Delay Leakage Current REFIN and TPGDELAY2 ILEAKAGE _PGOOD Falling delay, VSSE is out of PGOOD range VSSE = VREFIN (PGOOD high impedance), VPGOOD = + 0.2V -- 10 -- s -- -- 1 A REFIN Input Current IREFIN V = -- -- 1 A REFIN Voltage Range VREFIN 0.5 -- 1.8 V REFIN Under-Voltage Lockout Voltage Tolerance to VREFIN Source Current Limit VUVLO_REFIN VTOL_ REFIN Rising 360 390 420 Hysteresis -- 20 -- 10mA < I < 10mA, VREFIN = 0.75V 10mA < I < 10mA, VREFIN = 0.675V 10mA < I < 10mA, VREFIN = 0.6V 15 -- 15 15 -- 15 15 -- 15 ILIM SR V = 0V 10 40 -- ma Sink Current Limit ILIM SK V = REFIN + 1V 10 40 -- ma UVLO/ mv mv UVLO Threshold VUVLO_ Rising 2.5 2.7 2.85 V Hysteresis -- 120 -- mv Input Voltage Logic-High _H 1.7 -- -- Logic-Low _L -- -- 0.3 V Thermal Shutdown Thermal Shutdown Threshold TSD Shutdown Temperature (Note 5) -- 160 -- Hysteresis (Note 5) -- 15 -- C 5

Note 1. Stresses beyond those listed Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions may affect device reliability. Note 2. θ JA is measured at T A = 25 C on a high effective thermal conductivity four-layer test board per JEDEC 51-7. θjc is measured at the exposed pad of the package. Note 3. Devices are ESD sensitive. Handling precaution is recommended. Note 4. The device is not guaranteed to function outside its operating conditions. Note 5. Guarantee by design. 6

Typical Application Circuit V IN R1 10k C1 10µF x 2 C3 0.1µF R2 10k C2 1nF 2 1 REFIN 6 7 RT2568 10 9 PGOOD VOUT 3 SSE 5 4 P R3 100k C4 4.7µF 8, 11 (Exposed Pad) C5 10µF x 3 Power Good Indicator 7

Typical Operating Characteristics 1.0 Output Voltage vs. Temperature 1.0 Voltage vs. Temperature Output Voltage (V) 0.9 0.8 0.7 0.6 0.5 = 3.3V, = VDDQSNS = 1.5V, VOUT = 0.75V Voltage (V) 0.9 0.8 0.7 0.6 0.5 = 3.3V, = VDDQSNS = 1.5V, VOUT = 0.75V 500.0 Supply Current vs. Temperature 350 Shutdown Current vs. Temperature Supply Current (μa) 1 480.0 460.0 440.0 420.0 400.0 380.0 360.0 340.0 320.0 300.0 = 5V = 3.3V = VDDQSNS = 1.5V, VOUT = 0.75V Shutdown Current (μa) 1 300 250 200 150 100 50 = 5V = 3.3V = VDDQSNS = 1.5V, VOUT = 0.75V UVLO (V) 3.0 2.9 2.8 2.7 2.6 2.5 2.4 2.3 2.2 2.1 2.0 UVLO vs. Temperature Rising Falling = VDDQSNS = 1.5V, V = 2V, VOUT = 0.75V Current Limit (A) 4.0 3.5 3.0 2.5 2.0 1.5 1.0 Sourcing Current Limit vs. Temperature = 3.3V, = VDDQSNS = 1.5V, VOUT = 0.75V 8

4.0 Sinking Current Limit vs. Temperature Power On from Current Limit (A) 3.5 3.0 2.5 2.0 1.5 1.0 = 3.3V, = VDDQSNS = 1.5V, VOUT = 0.75V Power Off from V (2V/Div) (0.5V/Div) I OUT (1A/Div) V (1V/Div) = 3.3V, = 1.5V, VOUT = 0.75V, IOUT = 1.5A Time (100μs/Div) 0.75 @ 1.5A Transient Response V (2V/Div) (0.5V/Div) (10mV/Div) I OUT (1A/Div) V (1V/Div) = 3.3V, = 1.5V, VOUT = 0.75V, IOUT = 1.5A I OUT (1A/Div) Source, = 1.5V Time (10μs/Div) Time (500μs/Div) 0.75 @ 1.5A Transient Response (10mV/Div) IOUT (1A/Div) Sink, = 1.5V Time (500μs/Div) 9

Application Information The RT2568 is a 3.5A sink/source tracking termination regulator. It is specifically designed for low-cost and lowexternal component count system such as notebook PC applications. The RT2568 possesses a high speed operating amplifier that provides fast load transient response and only requires two 10μF ceramic input capacitors and three 10μF ceramic output capacitors. Capacitor Selection Good bypassing is recommended from VLDOIN to to help improve AC performance. A 10μF or greater input capacitor located as close as possible to the IC is recommended. The input capacitor must be located at a distance of less than 0.5 inches from the VLDOIN pin of the IC. Adding a 1μF ceramic capacitor close to the pin and it should be kept away from any parasitic impedance from the supply power. For stable operation, the total capacitance of the ceramic capacitor at the VTT output terminal must be larger than 30μF. The RT2568 is designed specifically to work with low ESR ceramic output capacitor in space saving and performance consideration. Larger output capacitance can reduce the noise and improve load transient response, stability and PSRR. The output capacitor should be located near the VTT output terminal pin as close as possible. WDFN-10L 3x3 package, the thermal resistance, θ JA, is 40 C/W on a standard JEDEC 51-7 four-layer thermal test board. The maximum power dissipation at T A = 25 C can be calculated by the following formula : P D(MAX) = (125 C 25 C) / (40 C/W) = 2.5W for WDFN-10L 3x3 package The maximum power dissipation depends on the operating ambient temperature for fixed T J(MAX) and thermal resistance, θ JA. The derating curve in Figure 1 allows the designer to see the effect of rising ambient temperature on the maximum power dissipation. Maximum Power Dissipation (W) 1 3.0 Four-Layer PCB 2.5 2.0 1.5 1.0 0.5 0.0 0 25 50 75 100 125 Ambient Figure 1. Derating Curve of Maximum Power Dissipation Thermal Considerations For continuous operation, do not exceed absolute maximum junction temperature. The maximum power dissipation depends on the thermal resistance of the IC package, PCB layout, rate of surrounding airflow, and difference between junction and ambient temperature. The maximum power dissipation can be calculated by the following formula : P D(MAX) = (T J(MAX) T A ) / θ JA where T J(MAX) is the maximum junction temperature, T A is the ambient temperature, and θ JA is the junction to ambient thermal resistance. For recommended operating condition specifications, the maximum junction temperature is 125 C. The junction to ambient thermal resistance, θ JA, is layout dependent. For 10

Outline Dimension D D2 L E E2 1 SEE DETAIL A e b 2 1 2 1 A A1 A3 DETAIL A Pin #1 ID and Tie Bar Mark Options Note : The configuration of the Pin #1 identifier is optional, but must be located within the zone indicated. Symbol Dimensions In Millimeters Dimensions In Inches Min Max Min Max A 0.700 0.800 0.028 0.031 A1 0.000 0.050 0.000 0.002 A3 0.175 0.250 0.007 0.010 b 0.180 0.300 0.007 0.012 D 2.950 3.050 0.116 0.120 D2 2.300 2.650 0.091 0.104 E 2.950 3.050 0.116 0.120 E2 1.500 1.750 0.059 0.069 e 0.500 0.020 L 0.350 0.450 0.014 0.018 W-Type 10L DFN 3x3 Package Richtek Technology Corporation 14F, No. 8, Tai Yuen 1 st Street, Chupei City Hsinchu, Taiwan, R.O.C. Tel: (8863)5526789 Richtek products are sold by description only. Richtek reserves the right to change the circuitry and/or specifications without notice at any time. Customers should obtain the latest relevant information and data sheets before placing orders and should verify that such information is current and complete. Richtek cannot assume responsibility for use of any circuitry other than circuitry entirely embodied in a Richtek product. Information furnished by Richtek is believed to be accurate and reliable. However, no responsibility is assumed by Richtek or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Richtek or its subsidiaries. 11