InGaP HBT Low Power Linear Amplifier RFGA212 InGaP HBT LOW POWER LINEAR AMPLIFIER Package: DFN, -Pin, 2mmx2mm Features High OIP3=35dBm at 196MHz 1 VBIAS Low DC Power: 3.3V, 23mA Low NF = 1.6dB at 196MHz RFIN 2 AMP 7 RFOUT/VCC 5MHz to 3MHz Operation Power Down Capability 3 6 Class 1C (1V) HBM ESD Rating 5 MSL 1 Rating Common Platform Compatible Applications Low Power Linear Gain Stage IF, Cellular, DCS, PCS, UMTS, WLAN, WiMax, TD-SCDMA, LTE Amplifiers Low Power LNA Functional Block Diagram Product Description The RFGA212 is specifically designed to achieve high OIP3 with minimal DC power. Ultra-linear performance has been demonstated in standard frequency bands within 15MHz to 3GHz. The RFGA212 features a VBIAS pin that allows users to optimize the quiescent current for specific requirements. The VBIAS pin also serves as a power-down pin. The RFGA212 offers 1V HBM ESD ruggedness and is manufactured using RFMD's InGaP HBT process to minimize Beta process variation. Ordering Information RFGA212SR 7 Reel with 1 pieces RFGA212SQ 25-piece sample bag RFGA212TR7 7 Reel with 75 pieces RFGA212TR13 13 Reel with 25 pieces RFGA212PCK-1 1MHz to 22MHz PCBA with 5-piece sample bag RFGA212PCK-11 26MHz to 27MHz PCBA with 5-piece sample bag GaAs HBT GaAs MESFET InGaP HBT Optimum Technology Matching Applied SiGe BiCMOS Si BiCMOS SiGe HBT GaAs phemt Si CMOS Si BJT GaN HEMT RF MEMS LDMOS RF MICRO DEVICES, RFMD, Optimum Technology Matching, Enabling Wireless Connectivity, PowerStar, POLARIS TOTAL RADIO and UltimateBlue are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. 26, RF Micro Devices, Inc. 1 of 12
Absolute Maximum Ratings Parameter Rating Unit Collector-to-Emitter Voltage (V CE ) 5.5 V DC Supply Current (Ic) 35 ma CW Input Power, 2:1 Output VSWR, 5.V +2 dbm CW Input Power, 2:1 Output VSWR, 5.5V +15 dbm Output Load VSWR at P3dB 5:1 dbm Operating Temperature Range (T L ) - to +5 C Operating Junction Temperature (T J ) 15 C Max Storage Temperature - to +15 C ESD Rating - Human Body Model (HBM) Class 1C Moisture Sensitivity Level MSL 1 Notes: 1. The maximum ratings must all be met simultaneously. 2. P DISS =P DC +P RFIN -P RFOUT 3. T J =T L + P DISS *R TH Caution! ESD sensitive device. Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Specified typical performance or functional operation of the device under Absolute Maximum Rating conditions is not implied. RoHS status based on EUDirective22/95/EC (at time of this document revision). The information in this publication is believed to be accurate and reliable. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents, or other rights of third parties, resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. Specification Parameter Unit Condition Min. Typ. Max. 15MHz V CC = 3.3V, I CQ = 23mA (includes I BIAS ) Frequency 13 15 27 MHz Gain 25 db Input Return Loss db Output Return Loss db P1dB 12.5 dbm OIP3 3 dbm dbm/tone, tone spacing = 1MHz Noise Figure 3. db 9MHz V CC = 3.3V, I CQ = 23mA (includes I BIAS ) Frequency 69 915 96 MHz Gain 19 db Input Return Loss db Output Return Loss db P1dB.5 dbm OIP3 3.5 dbm dbm/tone, tone spacing = 1MHz Noise Figure 2.7 db 196MHz V CC = 3.3V, I CQ = 23mA (includes I BIAS ) Frequency 1 196 22 MHz Gain.5 db Input Return Loss 1 db Output Return Loss.5 db P1dB 13.5 dbm OIP3 35 dbm dbm/tone, tone spacing = 1MHz Noise Figure 1.6 db 2 of 12
Parameter Specification Min. Typ. Max. Unit Condition 265MHz V CC = 3.3V, I CQ = 23mA (includes I BIAS ) Frequency 26 265 27 MHz Gain 12 db Input Return Loss 11 db Output Return Loss db P1dB 15 dbm OIP3 3 dbm dbm/tone, tone spacing = 1MHz Noise Figure 1.6 db Power Supply Operating Current (I CQ + I BIAS ), Quiescent 23. ma V CE =3.3V (includes I BIAS current ~2-3mA), per 196 EVB Recommended Operating Voltage (V CE ) 3.3 5. V Collector-to-Emitter operating voltage Power Down Current 2 A V BIAS =.V, V CE =3.3V Thermal Resistance (R TH ) 365 C/W See R TH graph on page 3 3 of 12
Typical Performance: 1MHz to 22MHz Application Circuit S11 versus Frequency 1 S21 versus Frequency -5-1 S11 (db) -15-2 Gain (db) 12-25 -3 1. 1.5 1.9 1.95 2. 2.5 2.1 2.15 2.2 1 1. 1.5 1.9 1.95 2. 2.5 2.1 2.15 2.2-5 S12 versus Frequency -5 S22 versus Frequency -1-1 S12 (db) -15 S22 (db) -15-2 -2-25 -3 1. 1.5 1.9 1.95 2. 2.5 2.1 2.15 2.2-25 -3 1. 1.5 1.9 1.95 2. 2.5 2.1 2.15 2.2 1 Tjmax vs. Voltage and Output Power (196MHz) 2 Rth vs. Voltage and Output Power (196MHz) Tjmax (C) 17 15 13 Tmax-3.3V Tmax-.V Tmax-.5V Tmax-5.V Rth (C/W) 3 36 3 32 12 3 11 1 9 2 26 2 Rth-3.3V Rth-.V Rth-.5V Rth-5.V 2 6 1 12 CW Output Power (dbm) 22 2 6 1 12 CW Output Power (dbm) of 12
Typical Performance: 1MHz to 22MHz Application Circuit 3 OIP3 versus Frequency (dbm tones) 3 OIP3 versus Output Power (196 MHz) 36 36 OIP3 (dbm) 3 32 OIP3 (dbm) 3 32 3 3 + + 2 1. 1.5 1.9 1.95 2. 2.5 2.1 2.15 2.2 2-5 - -3-2 -1 1 2 3 5 Power Out Per Tone (dbm) 1 P1dB versus Frequency 3. Noise Figure versus Frequency 2.5 P1dB (dbm) 12 NF (db) 2. 1.5 1. 1 +.5 + 1. 1.5 1.9 1.95 2. 2.5 2.1 2.15 2.2. 1. 1.5 1.9 1.95 2. 2.5 2.1 2.15 2.2 Output Power (dbm) 1 12 1 6 2 Pout & Collector Current vs. Pin @ 196MHz Pout_25C Pout_-C Pout_5C Ic_25C Ic_-C Ic_5C 23 22 21 2 19 1 17 15 Collector Current (ma) -2 13 - - -12-1 - -6 - -2 2 Input Power (dbm) 5 of 12
Evaluation Board Schematic 1MHz to 22MHz Application Circuit VBIAS VCC VBIAS VCC P1 1 2 3 HDR_1X C6.7uF C9 1pF R1 ohm C.7uF C3 1uF RFIN J1 C1 1uF L2 1nH 1 2 U1 VBIAS RFIN RFOUT/VCC 7 L1 3.3nH J2 RFOUT C2.5pF R2.2pF 3 6 5 C11.9pF R 1 ohm Evaluation Board BOM 1MHz to 22MHz Application Circuit Description Reference Designator Manufacturer Manufacturer s P/N PCB GA2121(A) Low Noise, Linear Gain Block Amplifier U1 RFMD RFGA212 CAP,.7uF, 1%, 1V, X5R, 63 C, C6 TDK Corporation CX5R1A75K CAP, 1pF, 1%, 5V, X7R, 2 C9 Murata Electronics GRM155R71H12KA1E CAP, 1uF, 1%, 1V, X5R, 2 C1, C3 Murata Electronics GRM155R61A15KE15D CAP,.5pF, +/-.1pF, 5V, HI-Q, 2 C2 Johanson Technology 5R7SR5BVTD CAP,.2pF, +/-.5pF, 5V, HI-Q, 2 R2 Johanson Technology 5R7SR2AVTD CAP,.9pF, +/-.1pF, 5V, HI-Q, 2 C11 Johanson Technology 5R7SR9BVTD IND, 1nH, +/-.1nH, T/F, 2 L2 Murata Electronics LQP15MN1NB2D IND, 3.3nH, +/-.1nH, T/F, 2 L1 Murata Electronics LQP15MN3N3B2D RES,, 5%, 1/W, 2 R1 Kamaya, Inc RMC1/S-1JTH RES, 1, 5%, 1/W, 2 R Kamaya, Inc RMC1/S-1JTH CONN, SMA, END LH, FLT,.62" J1, J2 Emerson Network Power 2-71-21 CONN, HDR, ST, PLRZD, -PIN,.1" P1 ITW Pancon MPSS1--C DNP C5, C7, C, C1, C, R3 6 of 12
Evaluation Board Assembly Drawing 1MHz to 22MHz Application Circuit 7 of 12
Typical Performance: 26MHz to 27MHz Application Circuit S11 versus Frequency S21 versus Frequency -5 S11 (db) -1-15 -2 Gain (db) 12 1-25 -3 2.6 2.61 2.62 2.63 2.6 2.65 2.66 2.67 2.6 2.69 2.7 6 2.6 2.61 2.62 2.63 2.6 2.65 2.66 2.67 2.6 2.69 2.7-5 S12 versus Frequency -5 S22 versus Frequency -1-1 S12 (db) -15-2 S22 (db) -15-2 -25-3 2.6 2.61 2.62 2.63 2.6 2.65 2.66 2.67 2.6 2.69 2.7-25 -3 2.6 2.61 2.62 2.63 2.6 2.65 2.66 2.67 2.6 2.69 2.7 of 12
3 Typical Performance: 26MHz to 27MHz Application Circuit OIP3 versus Frequency (dbm tones) OIP3 versus Output Power (265 MHz) 3 36 36 OIP3 (dbm) 3 32 OIP3 (dbm) 3 32 3 3 + + 2 2.6 2.61 2.62 2.63 2.6 2.65 2.66 2.67 2.6 2.69 2.7 2-5 - -3-2 -1 1 2 3 5 Power Out Per Tone (dbm) P1dB versus Frequency Noise Figure versus Frequency 1 3. 2.5 P1dB (dbm) 12 NF (db) 2. 1.5 1. 1 +.5 + 2.6 2.61 2.62 2.63 2.6 2.65 2.66 2.67 2.6 2.69 2.7. 2.6 2.61 2.62 2.63 2.6 2.65 2.66 2.67 2.6 2.69 2.7 1 Pout & Collector Current vs. Pin @ 265MHz 23 22 21 Output Power (dbm) 12 2 1 19 1 6 17 Pout_25C Pout_-C Pout_5C 2 Ic_25C 15 Ic_-C Ic_5C -2 13-12 -1 - -6 - -2 2 6 Input Power (dbm) Collector Current (ma) 9 of 12
Evaluation Board Schematic 26MHz to 27MHz Application Circuit VBIAS VCC VBIAS VCC P1 1 2 3 HDR_1X C6.7uF C9 1pF R1 ohm C.7uF C3 1uF RFIN J1 C1 1uF 1 2 U1 VBIAS RFIN RFOUT/VCC 7 L1 1.nH J2 RFOUT R2.2pF 3 6 5 C11 1pF R 1 ohm Evaluation Board BOM 26MHz to 27MHz Application Circuit Description Reference Designator Manufacturer Manufacturer s P/N PCB GA21211(A) Low Noise, Linear Gain Block Amplifier U1 RFMD RFGA212 CAP,.7uF, 1%, 1V, X5R, 63 C6, C TDK Corporation CX5R1A75K CAP, 1pF, 1%, 5V, X7R, 2 C9 Murata Electronics GRM155R71H12KA1E CAP, 1uF, 1%, 1V, X5R, 2 C1, C3 Murata Electronics GRM155R61A15KE15D CAP,.2pF, +/-.5pF, 5V, HI-Q, 2 R2 Johanson Technology 5R7SR2AVTD CAP, 1pF, +/-.1pF, 5V, HI-Q, 2 C11 Johanson Technology 5R7S1RBVTD IND, 1.nH, +/-.1nH, T/F, 2 L1 Murata Electronics LQP15MN1NB2D RES,, 5%, 1/W, 2 R1 Kamaya, Inc RMC1/S-1JTH RES, 1, 5%, 1/W, 2 R Kamaya, Inc RMC1/S-1JTH CONN, SMA, END LH, FLT,.62" J1, J2 Emerson Network Power 2-71-21 CONN, HDR, ST, PLRZD, -PIN,.1" P1 ITW Pancon MPSS1--C DNP C5, C7, C, C1, C, R3 1 of 12
Evaluation Board Assembly Drawing 26MHz to 27MHz Application Circuit 11 of 12
Pin Table and Description Pin Function Description 1 No Internal Connection 2 RF IN RF Input. External DC Block is Required 3 Ground No Internal Connection 5 Ground 6 No Internal Connection 7 RF OUT RF Output, Device Collector VBIAS Supply Voltage for Bias Circuit, Power-down Pin EPAD Thermal Ground. Must be Soldered to EVB Ground Plane Over a Bed of Vias. Package Drawing Dimensions in inches (millimeters) Refer to drawing posted at www.rfmd.com for tolerances TOP VIEW BOTTOM VIEW PIN 1 DOT BY MARKING 2.±.5.35±.5.6±.5 Exp.DAP PIN #1 IDENTIFICATION R.1 2.±.5 H2 Trace Code.5 Bsc 1.2±.5 Exp.DAP 1.5 Ref..25±.5 Trace Code to be assigned by assembly SubCon.5±.5.-.5 SIDE VIEW.152 Ref. 12 of 12