SCT22AF Nchannel SiC power MOSFET V DSS R DS(on) (Typ.) I D P D 65V 2m 29A 65W Outline TO22AB () (2) (3) Features Inner circuit ) Low onresistance (2) 2) Fast switching speed 3) Fast reverse recovery 4) Easy to parallel 5) Simple to drive () (3) * () Gate (2) Drain (3) Source * Body Diode 6) Pbfree lead plating ; RoHS compliant Packaging specifications Packing Tube Application Solar inverters DC/DC converters Switch mode power supplies Induction heating Motor drives Type Reel size (mm) Tape width (mm) Basic ordering unit (pcs) 5 Packing code C Marking SCT22AF Absolute maximum ratings (T a = 25 C) Parameter Symbol Value Unit Drain Source voltage V DSS 65 V Continuous drain current T c = 25 C T c = C I D * I D * 29 2 A A drain current I D,pulse *2 72 A Gate Source voltage (DC) Gate Source surge voltage (T surge 3nsec) V GSSsurge *3 Power dissipation (T c = 25 C) V GSS P D 6 to 22 to 26 65 V V W Junction temperature T j 75 C Range of storage temperature T stg 55 to 75 C 23 ROHM Co., Ltd. All rights reserved. /2 27.7 Rev.E
SCT22AF Thermal resistance Parameter Symbol Min. Values Typ. Max. Unit Thermal resistance, junction case R thjc.7.9 C/W Soldering temperature, wavesoldering for s T sold 265 C Electrical characteristics (T a = 25 C) Parameter Symbol Conditions Min. Values Typ. Max. Unit Drain Source breakdown voltage V (BR)DSS V GS = V, I D = ma 65 V Zero gate voltage drain current I DSS V DS = 65V, V GS = V T j = 25 C T j = 5 C 2 A Gate Source leakage current I GSS+ V GS = 22V, V DS = V na Gate Source leakage current I GSS V GS = 6V, V DS = V na Gate threshold voltage V GS (th) V DS = V GS, I D = 3.3mA.6 2.8 4. V * Limited only by maximum temperature allowed. *2 PW s, Duty cycle % *3 Example of acceptable Vgs waveform 23 ROHM Co., Ltd. All rights reserved. 2/2 27.7 Rev.E
SCT22AF Electrical characteristics (T a = 25 C) Parameter Symbol Conditions Values Min. Typ. Max. Unit Static drain source on state resistance R DS(on) V GS = 8V, I D = A T j = 25 C 2 56 T j = 25 C 49 m Gate input resistance R G f = MHz, open drain 3.8 Transconductance g fs V DS = V, I D = A 2.7 S Input capacitance C iss V GS = V 2 Output capacitance C oss V DS = 5V 9 pf Reverse transfer capacitance C rss f = MHz 3 Effective output capacitance, energy related C o(er) V GS = V V DS = V to 3V 5 pf Turn on delay time t d(on) V DD = 3V, I D = A 22 Rise time t r Turn off delay time t d(off) V GS = 8V/V R L = 3 3 6 ns Fall time t f R G = 9 Turn on switching loss E on Turn off switching loss E off V DD = 3V, I D =A V GS = 8V/V R G = Ω, L=5µH *E on includes diode reverse recovery 6 4 µj Gate Charge characteristics (T a = 25 C) Parameter Symbol Conditions Min. Values Typ. Max. Unit Total gate charge Q g V DD = 3V 6 Gate Source charge Q gs I D = A 4 nc Gate Drain charge V GS = 8V 2 Q gd Gate plateau voltage V (plateau) V DD = 3V, I D = A.4 V 23 ROHM Co., Ltd. All rights reserved. 3/2 27.7 Rev.E
SCT22AF Body diode electrical characteristics (SourceDrain) (T a = 25 C) Parameter Symbol Conditions Min. Values Typ. Max. Unit Inverse diode continuous, forward current Inverse diode direct current, pulsed I S * I SM *2 T c = 25 C 29 72 A A Forward voltage V SD V GS = V, I S = A 4.3 V Reverse recovery time Reverse recovery charge Peak reverse recovery current t rr Q rr I rrm I F = A, V R = 4V di/dt = 6A/ s 33 ns 53 nc 3. A Typical Transient Thermal Characteristics Symbol Value Unit Symbol Value Unit R th 96.m C th.55m R th2 44m K/W C th2 5.23m Ws/K R th3 96m C th3 83.3m 23 ROHM Co., Ltd. All rights reserved. 4/2 27.7 Rev.E
SCT22AF Electrical characteristic curves Fig. Power Dissipation Derating Curve 8 Fig.2 Maximum Safe Operating Area Power Dissipation : P D [W] 6 4 2 8 6 4 2 Operation in this area is limited by R DS(ON) Single Pulse P W = s P W = ms P W = ms P W = ms 5 5 2 Junction Temperature : Tj [ C].. Drain Source Voltage : V DS [V] Fig.3 Typical Transient Thermal Resistance vs. Pulse Width Transient Thermal Resistance : R th [K/W].. Single Pulse..... Pulse Width : PW [s] 23 ROHM Co., Ltd. All rights reserved. 5/2 27.7 Rev.E
SCT22AF Electrical characteristic curves Fig.4 Typical Output Characteristics(I) Fig.5 Typical Output Characteristics(II) 28 26 24 22 2 8 6 4 2 8 6 4 2 V GS = 2V V GS = 8V V GS = 6V V GS = 4V V GS = 2V V 8V 2 4 6 8 4 3 2 9 8 7 6 5 4 3 2 V GS = 2V V GS = 8V V GS = 6V V GS = 4V V GS = 2V V GS = V V GS = 8V 2 3 4 5 Drain Source Voltage : V DS [V] Drain Source Voltage : V DS [V] 28 26 24 22 2 8 6 4 2 8 6 4 2 Fig.6 T j = 5 C Typical Output Characteristics(I) V GS = 2V V GS = 8V V GS = 6V V GS = 4V V GS = 2V V GS = 8V V GS = V T a = 5ºC 2 4 6 8 Drain Source Voltage : V DS [V] Fig.7 T j = 5 C Typical Output Characteristics(II) 4 3 2 9 8 7 6 5 4 3 2 V GS = 2V V GS = 8V V GS = 6V V GS = 4V V GS = 2V V GS = V V GS = 8V T a = 5ºC 2 3 4 5 Drain Source Voltage : V DS [V] 23 ROHM Co., Ltd. All rights reserved. 6/2 27.7 Rev.E
SCT22AF Electrical characteristic curves Fig.8 Typical Transfer Characteristics (I) Fig.9 Typical Transfer Characteristics (II) 24 V DS = V 22 2 8 V DS = V.. T a = 5ºC T a = 75ºC 6 4 2 8 6 4 T a = 5ºC T a = 75ºC 2. 2 4 6 8 2 4 6 8 2 2 4 6 8 2 4 6 8 2 Gate Source Voltage : V GS [V] Gate Source Voltage : V GS [V] Gate Threshold Voltage : V GS(th) [V] Fig. Gate Threshold Voltage vs. Junction Temperature 5 4.5 4 3.5 3 2.5 2.5.5 V DS = V GS I D = 3.3mA 5 5 5 2 Junction Temperature : T j [ C] Transconductance : g fs [S]. Fig. Transconductance vs. Drain Current V DS = V T a = 5ºC T a = 75ºC... 23 ROHM Co., Ltd. All rights reserved. 7/2 27.7 Rev.E
SCT22AF Electrical characteristic curves Static Drain Source OnState Resistance : R DS(on) [Ω] Fig.2 Static Drain Source On State Resistance vs. Gate Source Voltage.6.5.4.3.2. I D = A I D = 2A 6 8 2 4 6 8 2 22 Gate Source Voltage : V GS [V] Static Drain Source OnState Resistance : R DS(on) [Ω] Fig.3 Static Drain Source On State Resistance vs. Junction Temperature.3.25.2.5..5 I D = 2A V GS = 8V I D = A 5 5 5 2 Junction Temperature : T j [ºC] Static Drain Source OnState Resistance : R DS(on) [Ω] Fig.4 Static Drain Source On State Resistance vs. Drain Current T a = 5ºC T a = 25ºC T a = 75ºC V GS = 8V.. 23 ROHM Co., Ltd. All rights reserved. 8/2 27.7 Rev.E
SCT22AF Electrical characteristic curves Fig.5 Typical Capacitance vs. Drain Source Voltage Fig.6 Coss Stored Energy 25 Capacitance : C [pf] f = MHz V GS = V C rss C oss C iss Coss Stored Energy : E OSS [µj] 2 5 5. 2 4 6 8 Drain Source Voltage : V DS [V] Drain Source Voltage : V DS [V] Fig.7 Switching Characteristics Fig.8 Dynamic Input Characteristics Switching Time : t [ns] t f t d(off) t d(on) t r V DD = 3V V GS = 8V R G = Ω Gate Source Voltage : V GS [V] 2 5 5 V DD =3V I D = A. 2 3 4 5 6 7 Total Gate Charge : Q g [nc] 23 ROHM Co., Ltd. All rights reserved. 9/2 27.7 Rev.E
SCT22AF Electrical characteristic curves Switching Energy : E [µj] Fig.9 Typical Switching Loss vs. Drain Source Voltage 2 9 8 7 6 5 4 3 2 I D =A V GS = 8V/V R G = Ω L=5µH E on E off 2 3 4 5 Drain Source Voltage : V DS [V] Switching Energy : E [µj] Fig.2 Typical Switching Loss vs. Drain Current 5 45 4 35 3 25 2 5 5 V DD =3V V GS = 8V/V R G = Ω L=5µH E on E off 5 5 2 25 3 Drain Current : I D [A] Fig.2 Typical Switching Loss vs. External Gate Resistance 2 Switching Energy : E [µj] 5 5 V DD =3V I D =A V GS = 8V/V L=5µH E on E off 5 5 2 25 3 External Gate Resistance : R G [Ω] 23 ROHM Co., Ltd. All rights reserved. /2 27.7 Rev.E
SCT22AF Electrical characteristic curves Inverse Diode Forward Current : I S [A] Fig.22 Inverse Diode Forward Current vs. Source Drain Voltage.. V GS = V T a = 5ºC T a = 75ºC 2 3 4 5 6 7 8 Source Drain Voltage : V SD [V] Reverse Recovery Time : t rr [ns] Fig.23 Reverse Recovery Time vs.inverse Diode Forward Current di / dt = 6A / µs V R = 4V V GS = V Inverse Diode Forward Current : I S [A] 23 ROHM Co., Ltd. All rights reserved. /2 27.7 Rev.E
SCT22AF Measurement circuits Fig. Switching Time Measurement Circuit Fig.2 Switching Waveforms VGS ID VDS Pulse width RG D.U.T. RL VDD VGS VDS % 5% 9% 5% % % 9% 9% td(on) tr td(off) tf ton toff Fig.2 Gate Charge Measurement Circuit Fig.22 Gate Charge Waveform VGS ID VDS VG RL Qg IG(Const.) D.U.T. VGS VDD Qgs Qgd Charge Fig.3 Switching Energy Measurement Circuit Fig.32 Switching Waveforms E on = I D V DS E off = I D V DS Same type device D.U.T. as D.U.T. IF L V DS I rr V surge VDD RG DRIVER MOSFET D.U.T. I D I D Fig.4 Reverse Recovery Time Measurement Circuit Fig.42 Reverse Recovery Waveform IF D.U.T. D.U.T. RG IF L DRIVER MOSFET VDD trr Irr drr / dt Irr % Irr 9% Irr % 23 ROHM Co., Ltd. All rights reserved. 2/2 27.7 Rev.E
Notice Notes ) 2) 3) 4) 5) 6) 7) 8) 9) ) ) 2) The information contained herein is subject to change without notice. Before you use our Products, please contact our sales representative and verify the latest specifications : Although ROHM is continuously working to improve product reliability and quality, semiconductors can break down and malfunction due to various factors. Therefore, in order to prevent personal injury or fire arising from failure, please take safety measures such as complying with the derating characteristics, implementing redundant and fire prevention designs, and utilizing backups and failsafe procedures. ROHM shall have no responsibility for any damages arising out of the use of our Poducts beyond the rating specified by ROHM. Examples of application circuits, circuit constants and any other information contained herein are provided only to illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by ROHM or any other parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of such technical information. The Products specified in this document are not designed to be radiation tolerant. For use of our Products in applications requiring a high degree of reliability (as exemplified below), please contact and consult with a ROHM representative : transportation equipment (i.e. cars, ships, trains), primary communication equipment, traffic lights, fire/crime prevention, safety equipment, medical systems, and power transmission systems. Do not use our Products in applications requiring extremely high reliability, such as aerospace equipment, nuclear power control systems, and submarine repeaters. ROHM shall have no responsibility for any damages or injury arising from noncompliance with the recommended usage conditions and specifications contained herein. ROHM has used reasonable care to ensur the accuracy of the information contained in this document. However, ROHM does not warrants that such information is errorfree, and ROHM shall have no responsibility for any damages arising from any inaccuracy or misprint of such information. Please use the Products in accordance with any applicable environmental laws and regulations, such as the RoHS Directive. For more details, including RoHS compatibility, please contact a ROHM sales office. ROHM shall have no responsibility for any damages or losses resulting noncompliance with any applicable laws or regulations. When providing our Products and technologies contained in this document to other countries, you must abide by the procedures and provisions stipulated in all applicable export laws and regulations, including without limitation the US Export Administration Regulations and the Foreign Exchange and Foreign Trade Act. 3) This document, in part or in whole, may not be reprinted or reproduced without prior consent of ROHM. Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http:///contact/ 25 ROHM Co., Ltd. All rights reserved. R2S
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