AOT68L/AOB68L/AOTF68L 6V NChannel MOSFET General Description The AOT68L & AOB68L & AOTF68L uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of R DS(ON), Ciss and Coss. This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting. Product Summary V DS I D (at V GS =V) R DS(ON) (at V GS =V) R DS(ON) (at V GS =4.V) % UIS Tested % R g Tested 6V 3A < 9mΩ < mω TO TOF Top View TO63 D PAK D D AOT68L Absolute Maximum Ratings T A = C unless otherwise noted Parameter Symbol AOT68L/AOB68L DrainSource Voltage 6 GateSource Voltage Continuous Drain Current G Pulsed Drain Current C T C = C T C = C G D S G D S AOTF68L Continuous Drain T A = C 7 I DSM Current T A =7 C. Avalanche Current C I AS 3 Avalanche energy L=.mH C 6 T C = C V DS V GS I D I DM E AS AOB68L ± G S AOTF68L 4. 3. T A = C. P DSM T A =7 C.3 Junction and Storage Temperature Range T J, T STG to 7 C 3 8 6 P Power Dissipation B D T C = C.. Power Dissipation A 7 G Units V V A A A mj W W S Thermal Characteristics Parameter Symbol AOT68L/AOB68L AOTF68L Maximum JunctiontoAmbient A t s R θja Maximum JunctiontoAmbient A D SteadyState 6 6 Maximum JunctiontoCase SteadyState 3.6 6.4 R θjc Units C/W C/W C/W Rev : July www.aosmd.com Page of 7
AOT68L/AOB68L/AOTF68L Electrical Characteristics (T J = C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BV DSS DrainSource Breakdown Voltage I D =µa, V GS =V 6 V V DS =6V, V GS =V I DSS Zero Gate Voltage Drain Current µa T J = C I GSS GateBody leakage current V DS =V, V GS =±V ± na V GS(th) Gate Threshold Voltage V DS =V GS, I D =µa.4.9. V I D(ON) On state drain current V GS =V, V DS =V 7 A R DS(ON) Static DrainSource OnResistance V GS =V, I D =A.8 9 T J = C 9.3 3. V GS =4.V, I D =A 9. mω g FS Forward Transconductance V DS =V, I D =A 4 S V SD Diode Forward Voltage I S =A,V GS =V.7 V I S Maximum BodyDiode Continuous Current G 3 A DYNAMIC PARAMETERS C iss Input Capacitance 9 pf C oss Output Capacitance V GS =V, V DS =3V, f=mhz 8 pf C rss Reverse Transfer Capacitance 7 pf R g Gate resistance V GS =V, V DS =V, f=mhz 3 Ω SWITCHING PARAMETERS Q g (V) Total Gate Charge 4 nc Q g (4.V) Total Gate Charge 6 nc V GS =V, V DS =3V, I D =A Q gs Gate Source Charge 3 nc Q gd Gate Drain Charge.6 nc t D(on) TurnOn DelayTime 7. ns t r TurnOn Rise Time V GS =V, V DS =3V, R L =.Ω, 3 ns t D(off) TurnOff DelayTime R GEN =3Ω 8 ns t f TurnOff Fall Time 4 ns t rr Body Diode Reverse Recovery Time I F =A, di/dt=a/µs ns Q rr Body Diode Reverse Recovery Charge I F =A, di/dt=a/µs 7 nc A. The value of R θja is measured with the device mounted on in FR4 board with oz. Copper, in a still air environment with T A = C. The Power dissipation P DSM is based on R θja and the maximum allowed junction temperature of C. The value in any given application depends on the user's specific board design, and the maximum temperature of 7 C may be used if the PCB allows it. B. The power dissipation P D is based on T J(MAX) =7 C, using junctiontocase thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature T J(MAX) =7 C. Ratings are based on low frequency and duty cycles to keep initial T J = C. D. The R θja is the sum of the thermal impedance from junction to case R θjc and case to ambient. E. The static characteristics in Figures to 6 are obtained using <3µs pulses, duty cycle.% max. F. These curves are based on the junctiontocase thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T J(MAX) =7 C. The SOA curve provides a single pulse rating. G. The maximum current limited by package. H. These tests are performed with the device mounted on in FR4 board with oz. Copper, in a still air environment with T A = C. mω THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev : July www.aosmd.com Page of 7
AOT68L/AOB68L/AOTF68L V 4V V DS =V 4 4.V 4 I D (A) 3 3.V I D (A) 3 C =3.V 3 4 Fig : OnRegion Characteristics (Note E) C 3 4 V GS (Volts) Figure : Transfer Characteristics (Note E) 3.6 R DS(ON) (mω) V GS =4.V V GS =V Normalized OnResistance.4..8.6.4. V GS =V I D =A 7 V GS =4.V I D =A 3 I D (A) Figure 3: OnResistance vs. Drain Current and Gate Voltage (Note E).8 7 7 Temperature ( C) Figure 4: OnResistance vs. Junction 8Temperature (Note E) I D =A.E R DS(ON) (mω) 4 3 C I S (A).E 4.E.E.E3 C C C.E4 4 6 8 V GS (Volts) Figure : OnResistance vs. GateSource Voltage (Note E).E...4.6.8.. V SD (Volts) Figure 6: BodyDiode Characteristics (Note E) Rev : July www.aosmd.com Page 3 of 7
AOT68L/AOB68L/AOTF68L 8 V DS =3V I D =A C iss V GS (Volts) 6 4 Capacitance (pf) 8 6 4 C oss C rss 3 6 9 Q g (nc) Figure 7: GateCharge Characteristics 3 4 6 Figure 8: Capacitance Characteristics.. µs µs T J(Max) =7 C T C = C I D (Amps)... R DS(ON) T J(Max) =7 C T C = C µs ms ms DC Power (W) 7... Figure 9: Maximum Forward Biased Safe Operating Area for AOT68L and AOB68L (Note F).... Figure : Single Pulse Power Rating JunctiontoCase 8 for AOT68L and AOB68L (Note F) Z θjc Normalized Transient Thermal Resistance.. D=T on /T T J,PK =T C P DM.Z θjc.r θjc R θjc =3.6 C/W Single Pulse E.... Figure : Normalized Maximum Transient Thermal Impedance for AOT68L and AOB68L (Note F) 4 In descending order D=.,.3,.,.,.,., single pulse P D T on T Rev : July www.aosmd.com Page 4 of 7
AOT68L/AOB68L/AOTF68L.. µs 3 T J(Max) =7 C T C = C I D (Amps)... R DS(ON) T J(Max) =7 C T C = C µs ms ms DC Power (W) Z θjc Normalized Transient Thermal Resistance.... Figure : Maximum Forward Biased Safe Operating Area for AOTF68L D=T on /T T J,PK =T C P DM.Z θjc.r θjc R θjc =6.4 C/W Single Pulse.... 7 Figure 3: Single Pulse Power Rating JunctiontoCase for AOTF68L (Note F) In descending order D=.,.3,.,.,.,., single pulse P D T on T 8. 4 E.... Figure 4: Normalized Maximum Transient Thermal Impedance for AOTF68L (Note F) Rev : July www.aosmd.com Page of 7
AOT68L/AOB68L/AOTF68L I AR (A) Peak Avalanche Current T A = C T A = C T A = C T A = C Power Dissipation (W) 4 3 Time in avalanche, t A (µs) Figure : Single Pulse Avalanche capability (Note C) 7 7 T CASE ( C) Figure 6: Power Derating (Note F) T A = C Current rating I D (A) Power (W) 7 7 7 T CASE ( C) Figure 7: Current Derating (Note F)... 8 Figure 8: Single Pulse Power Rating Junctionto Ambient (Note H) Z θja Normalized Transient Thermal Resistance... D=T on /T T J,PK =T A P DM.Z θja.r θja R θja =6 C/W Single Pulse.. Figure 9: Normalized Maximum Transient Thermal Impedance (Note H) 4 In descending order D=.,.3,.,.,.,., single pulse P D T on T Rev : July www.aosmd.com Page 6 of 7
AOT68L/AOB68L/AOTF68L Gate Charge Test Circuit & Waveform Qg V Qgs Qgd Ig RL Resistive Switching Test Circuit & Waveforms Charge Rg 9% % td(on) t r t d(off) t f t on t off Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L E = / LI AR AR BV DSS Id Rg Id I AR Diode Recovery Test Circuit & Waveforms Q = Idt rr Ig Isd L Isd I F di/dt I RM t rr Rev : July www.aosmd.com Page 7 of 7