Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor s product/patent coverage may be accessed at www.onsemi.com/site/pdf/patent-marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. Typical parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
FCPF400N80ZL N-Channel SuperFET II MOSFET 800 V, A, 400 mω Features Typ. R DS(on) = 340 mω Ultra Low Gate Charge (Typ. Q g = 43 nc) Low E oss (Typ. 4. uj @ 400 V) Low Effective Output Capacitance (Typ. C oss(eff.) = 38 pf) 0% Avalanche Tested RoHS Compliant ESD Improved Capability Applications AC-DC Power Supply LED Lighting Description November 204 SuperFET II MOSFET is Fairchild Semiconductor s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. In addition, internal gate-source ESD diode allows to withstand over 2kV HBM surge stress. Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as Audio, Laptop adapter, Lighting, ATX power and industrial power applications. D G DS G TO-220F Absolute Maximum Ratings T C = 25 o C unless otherwise noted. S Symbol Parameter FCPF400N80ZL Unit V DSS Drain to Source Voltage 800 V V GSS Gate to Source Voltage *Drain current limited by maximum junction temperature. Thermal Characteristics - DC ±20 - AC (f > Hz) ±30 I D Drain Current - Continuous (T C = 25 o C) * - Continuous (T C = 0 o C) 6.9* A I DM Drain Current - Pulsed (Note ) 33* A E AS Single Pulsed Avalanche Energy (Note 2) 339 mj I AR Avalanche Current (Note ) 2.2 A E AR Repetitive Avalanche Energy (Note ) 0.36 mj dv/dt MOSFET dv/dt 0 Peak Diode Recovery dv/dt (Note 3) 20 P D Power Dissipation (T C = 25 o C) 35.7 W - Derate Above 25 o C 0.29 W/ o C T J, T STG Operating and Storage Temperature Range -55 to +50 o C T L Maximum Lead Temperature for Soldering, /8 from Case for 5 Seconds 300 o C Symbol Parameter FCPF400N80ZL Unit V V/ns R θjc Thermal Resistance, Junction to Case, Max. 3.5 R θja Thermal Resistance, Junction to Ambient, Max. 62.5 o C/W
Package Marking and Ordering Information Part Number Top Mark Package Packing Method Reel Size Tape Width Quantity FCPF400N80ZL FCPF400N80ZL TO-220F Tube N/A N/A 50 units Electrical Characteristics T C = 25 o C unless otherwise noted. Symbol Parameter Test Conditions Min. Typ. Max. Unit Off Characteristics BV DSS Drain to Source Breakdown Voltage V GS = 0 V, I D = ma, T J = 25 C 800 - - V ΔBV DSS Breakdown Voltage Temperature I / ΔT J Coefficient D = ma, Referenced to 25 o C - 0.8 - V/ o C V DS = 800 V, V GS = 0 V - - 25 I DSS Zero Gate Voltage Drain Current μa V DS = 640 V, T C = 25 o C - - 250 I GSS Gate to Body Leakage Current V GS = ±20 V, V DS = 0 V - - ± μa On Characteristics V GS(th) Gate Threshold Voltage Dynamic Characteristics V GS = V DS, I D =. ma 2.5-4.5 V GS = V DS, I D = 0.68 ma 2.5-4.5 V GS = V, I D = 5.5 A - 0.34 0.4 R DS(on) Static Drain to Source On Resistance V GS = V, I D = 7. A - 0.35 0.4 Ω V GS = V, I D = 7. A, T C = 50 o C - 0.89 - g FS Forward Transconductance V DS = 20 V, I D = 5.5 A - 2 - S C iss Input Capacitance - 770 2350 pf V DS = 0 V, V GS = 0 V, C oss Output Capacitance - 5 70 pf f = MHz C rss Reverse Transfer Capacitance - 0.5 - pf C oss Output Capacitance V DS = 480 V, V GS = 0 V, f = MHz - 28 - pf C oss(eff.) Effective Output Capacitance V DS = 0 V to 480 V, V GS = 0 V - 38 - pf Q g(tot) Total Gate Charge at V V DS = 640 V, I D = A, - 43 56 nc Q gs Gate to Source Gate Charge V GS = V - 8.6 - nc Q gd Gate to Drain Miller Charge (Note 4) - 7 - nc ESR Equivalent Series Resistance f = MHz - 2.3 - Ω V Switching Characteristics t d(on) Turn-On Delay Time - 20 50 ns t r Turn-On Rise Time V DD = 400 V, I D = A, - 2 34 ns t d(off) Turn-Off Delay Time V GS = V, R g = 4.7 Ω - 5 2 ns t f Turn-Off Fall Time (Note 4) - 2.6 5 ns Drain-Source Diode Characteristics I S Maximum Continuous Drain to Source Diode Forward Current - - A I SM Maximum Pulsed Drain to Source Diode Forward Current - - 33 A V SD Drain to Source Diode Forward Voltage V GS = 0 V, I SD = A - -.2 V t rr Reverse Recovery Time V GS = 0 V, I SD = A, - 395 - ns Q rr Reverse Recovery Charge di F /dt = 0 A/μs - 7.4 - μc Notes:. Repetitive rating: pulse-width limited by maximum junction temperature. 2. I AS = 2.2 A, V DD = 50 V, R G = 25 Ω, starting T J = 25 C. 3. I SD A, di/dt 200 A/μs, V DD BV DSS, starting T J = 25 C. 4. Essentially independent of operating temperature typical characteristics. 2
Typical Performance Characteristics Figure. On-Region Characteristics ID, Drain Current[A] 50 V GS =.0V 8.0V 7.0V 6.5V 6.0V 5.5V. 250μs Pulse Test 2. T C = 25 o C 2 20 V DS, Drain to Source Voltage[V] Figure 2. Transfer Characteristics 3 4 5 6 7 V GS, Gate tosource Voltage[V] Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage Drain Current and Gate Voltage Variation vs. Source Current and Temperature RDS(ON) [Ω], Drain to Source On-Resistance 0.7 0.6 0.5 0.4 0.3 *Note: T C = 25 o C V GS = V V GS = 20V ID, Drain Current[A] IS, Reverse Drain Current [A] 50 50. V DS = 20V 2. 250μs Pulse Test 50 o C. V GS = 0V 2. 250μs Pulse Test 50 o C -55 o C 25 o C 25 o C 0.2 0 6 2 8 24 30 35 I D, Drain Current [A] Figure 5. Capacitance Characteristics 0. 0.2 0.4 0.6 0.8.0.2.4 V SD, Body Diode Forward Voltage [V] Figure 6. Gate Charge Characteristics 000 *Note: I D = A Capacitances [pf] 00 0 *Note:. V GS = 0V 2. f = MHz C iss C oss Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd C rss Crss = Cgd 0. 0. 0 00 V DS, Drain to Source Voltage [V] VGS, Gate to Source Voltage [V] 8 6 4 2 V DS = 60V V DS = 400V V DS = 640V 0 0 5 30 45 Q g, Total Gate Charge [nc] 3
Typical Performance Characteristics (Continued) Figure 7. Breakdown Voltage Variation vs. Temperature BVDSS, [Normalized] Drain to Source Breakdown Voltage ID, Drain Current [A].2..0 0.9. V GS = 0V 2. I D = ma 0.8-0 -50 0 50 0 50 200 T J, Junction Temperature [ o C] Figure 9. Maximum Safe Operating Area 0 0. Operation in This Area is Limited by R DS(on). T C = 25 o C 2. T J = 50 o C 3. Single Pulse 0.0 0. 0 00 V DS, Drain to Source Voltage [V] DC ms ms μs 0μs RDS(on), [Normalized] Drain to Source On-Resistance Figure 8. On-Resistance Variation vs. Temperature ID, Drain Current [A] 3.0 2.5 2.0.5.0 0.5. V GS = V 2. I D = 5.5A 0.0-0 -50 0 50 0 50 200 T J, Junction Temperature [ o C] Figure. Maximum Drain Current vs. Case Temperature 2 8 6 4 2 0 25 50 75 0 25 50 T C, Case Temperature [ o C] Figure. Eoss vs. Drain to Source Voltage 2 E OSS, [μj] 8 6 4 2 0 0 200 400 600 800 V DS, Drain to Source Voltage [V] 4
Typical Performance Characteristics (Continued) Z θjc (t), Thermal Response [ o C/W] 5 0. 0.5 0.2 0. 0.05 0.02 0.0 Figure 2. Transient Thermal Response Curve. Z θjc (t) = 3.5 o C/W Max. 0.0 Single pulse 2. Duty Factor, D= t /t 2 3. T JM - T C = P DM * Z θjc (t) 0.005-5 -4-3 -2-0 2 t, Rectangular Pulse Duration [sec] P DM t t 2 5
I G = const. Figure 3. Gate Charge Test Circuit & Waveform V DS R L V DS 90% R G V GS V DD V V GS DUT % V GS t d(on) t r t d(off) tf t on t off Figure 4. Resistive Switching Test Circuit & Waveforms V GS Figure 5. Unclamped Inductive Switching Test Circuit & Waveforms 6
V GS R G DUT I SD Driver + V DS _ L Same Type as DUT dv/dt controlled by RG I SD controlled by pulse period V DD V GS ( Driver ) Gate Pulse Width D = -------------------------- Gate Pulse Period V I FM, Body Diode Forward Current I SD ( DUT ) di/dt I RM Body Diode Reverse Current V DS ( DUT ) Body Diode Recovery dv/dt V SD V DD Body Diode Forward Voltage Drop Figure 6. Peak Diode Recovery dv/dt Test Circuit & Waveforms 7
A.30 9.80 3.40 3.00 2.90 2.50 B 9.00 7.70 3.00 2.60 X 45 6.60 6.20 B 5.70 5.00 3.30 2.70 B 3.70.30 2.4.20 0.90 (2X) 2.70 2.30.20.00 2.74 2.34 (2X) 0.90 0.50 (3X) 0.50 M A 4.60 4.30 NOTES: B 0.60 0.40 A. EXCEPT WHERE NOTED CONFORMS TO EIAJ SC9A. B DOES NOT COMPLY EIAJ STD. VALUE. C. ALL DIMENSIONS ARE IN MILLIMETERS. D. DIMENSIONS ARE EXCLUSIVE OF BURRS, MOLD FLASH AND TIE BAR PROTRUSIONS. E. DIMENSION AND TOLERANCE AS PER ASME Y4.5-2009. F. DRAWING FILE NAME: TO220V03REV G. FAIRCHILD SEMICONDUCTOR
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