DATA SHEET SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE MOS FIELD EFFECT TRANSISTOR 2SK3357 DESCRIPTION The 2SK3357 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES Super low on-state resistance: RDS(on) = 5.8 mω MAX. (VGS = V, ID = 38 A) RDS(on)2 = 8.8 mω MAX. (VGS = 4. V, ID = 38 A) Low Ciss: Ciss = 98 pf TYP. Built-in gate protection diode ORDERING INFORMATION PART NUMBER PACKAGE 2SK3357 TO-3P (TO-3P) ABSOLUTE MAXIMUM RATINGS (TA = 25 C) Drain to Source Voltage VDSS 6 V Gate to Source Voltage VGSS(AC) ±2 V Drain Current (DC) ID(DC) ±75 A Drain Current (pulse) Note ID(pulse) ±3 A Total Power Dissipation (TC = 25 C) PT 5 W Total Power Dissipation (TA = 25 C) PT 3. W Channel Temperature Tch 5 C Storage Temperature Tstg 55 to +5 C Single Avalanche Current Note2 IAS 75 A Single Avalanche Energy Note2 EAS 562 mj Notes. PW µs, Duty cycle % 2. Starting Tch = 25 C, RG = 25 Ω, VGS = 2 V V THERMAL RESISTANCE Channel to Case Rth(ch-C).83 C/W Channel to Ambient Rth(ch-A) 4.7 C/W The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. Date Published Printed in Japan D434EJ2VDS (2nd edition) May 2 NS CP(K) The mark shows major revised points. 999, 2
ELECTRICAL CHARACTERISTICS (TA = 25 C) CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Drain to Source On-state Resistance RDS(on) VGS = V, ID = 38 A 4.6 5.8 mω RDS(on)2 VGS = 4. V, ID = 38 A 6. 8.8 mω Gate to Source Cut-off Voltage VGS(off) VDS = V, ID = ma.5 2. 2.5 V Forward Transfer Admittance yfs VDS = V, ID = 38 A 38 72 S Drain Leakage Current IDSS VDS = 6 V, VGS = V µa Gate to Source Leakage Current IGSS VGS = ±2 V, VDS = V ± µa Input Capacitance Ciss VDS = V, VGS = V, f = MHz 98 pf Output Capacitance Coss 5 pf Reverse Transfer Capacitance Crss 63 pf Turn-on Delay Time td(on) ID = 38 A, VGS(on) = V, VDD = 3 V, 5 ns Rise Time tr RG = Ω 35 ns Turn-off Delay Time td(off) 5 ns Fall Time tf 48 ns Total Gate Charge QG ID = 75 A, VDD = 48 V, VGS = V 7 nc Gate to Source Charge QGS 28 nc Gate to Drain Charge QGD 46 nc Body Diode Forward Voltage VF(S-D) IF = 75 A, VGS = V.96 V Reverse Recovery Time trr IF = 75 A, VGS = V, 64 ns Reverse Recovery Charge Qrr di/dt = A/µs 3 nc TEST CIRCUIT AVALANCHE CAPABILITY TEST CIRCUIT 2 SWITCHING TIME D.U.T. RG = 25 Ω PG. 5 Ω VGS = 2 V BVDSS IAS ID VDD VDS L VDD VGS PG. τ RG D.U.T. RL VDD VGS Wave Form ID Wave Form VGS ID % % 9 % VGS(on) ID 9 % 9 % td(on) tr td(off) t f % Starting Tch τ = µ s Duty Cycle % ton toff TEST CIRCUIT 3 GATE CHARGE D.U.T. IG = 2 ma RL PG. 5 Ω VDD 2 Data Sheet D434EJ2VDS
TYPICAL CHARACTERISTICS (TA = 25 C ) dt - Percentage of Rated Power - % 8 6 4 2 DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 2 4 6 8 2 4 6 Tch - Channel Temperature - C PT - Total Power Dissipation - W 75 5 25 75 5 25 TOTAL POWER DISSIPATION vs. CASE TEMPERATURE 2 4 6 8 2 4 6 TC - Case Temperature - C FORWARD BIAS SAFE OPERATING AREA ID(pulse) RDS(on) Limited (at VGS = V) ID(DC) ms ms Power Dissipation Limited µs PW = µs TC = 25 C Single Pulse. VDS - Drain to Source Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH rth(t) - Transient Thermal Resistance - C/W.. µ µ Rth(ch-A) = 4.7 C/W Rth(ch-C) =.83 C/W Single Pulse m m m PW - Pulse Width - s Data Sheet D434EJ2VDS 3
FORWARD TRANSFER CHARACTERISTICS DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 5 TA = 5 C 25 C 75 C 5 C 4 3 2 VGS = V 4. V. VDS = V 2 3 4 5 6 VGS - Gate to Source Voltage - V. 2. 3. 4. VDS - Drain to Source Voltage - V yfs - Forward Transfer Admittance - S FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT VDS = V.... TA = 5 C 75 C 25 C 5 C RDS(on) - Drain to Source On-state Resistance - mω DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 5 5 ID = 38 A VGS - Gate to Source Voltage - V 5 2 RDS(on) - Drain to Source On-state Resistance - mω 5 5 DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT VGS = 4. V V VGS(th) - Gate to Source Threshold Voltage - V 3. 2.5 2..5..5 GATE TO SOURCE THRESHOLD VOLTAGE vs. CHANNEL TEMPERATURE VDS = V ID = ma 5 5 5 Tch - Channel Temperature - C 4 Data Sheet D434EJ2VDS
RDS(on) - Drain to Source On-state Resistance - mω 2 2 DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 8 6 4 5 VGS = 4. V V 5 5 Tch - Channel Temperature - C ID = 38 A ISD - Diode Forward Current - A SOURCE TO DRAIN DIODE FORWARD VOLTAGE VGS = V VGS = V..5..5 VSD - Source to Drain Voltage - V Ciss, Coss, Crss - Capacitance - pf. CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE VGS = V f = MHz VDS - Drain to Source Voltage - V Ciss Coss Crss td(on), tr, td(off), tf - Switching Time - ns. SWITCHING CHARACTERISTICS tr td(off) tf td(on) trr - Reverse Recovery Time - ns. REVERSE RECOVERY TIME vs. DRAIN CURRENT IF - Drain Current - A di/dt = A/ µ s VGS = V. VDS - Drain to Source Voltage - V 8 6 4 2 DYNAMIC INPUT/OUTPUT CHARACTERISTICS VDD = 48 V 3 V 2 V VDS VGS 2 4 6 8 2 4 6 QG - Gate Charge - nc ID = 75 A 8 6 4 2 VGS - Gate to Source Voltage - V Data Sheet D434EJ2VDS 5
IAS - Single Avalanche Energy - mj SINGLE AVALANCHE ENERGY vs. INDUCTIVE LOAD IAS = 75 A VDD = 3 V RG = 25 Ω VGS = 2 V V µ µ EAS = 562 mj L - Inductive Load - H m m Energy Derating Factor - % 6 4 2 8 6 4 2 SINGLE AVALANCHE ENERGY DERATING FACTOR 25 5 75 VDD = 3 V RG = 25 Ω VGS = 2 V V IAS 75 A 25 5 Starting Tch - Starting Channel Temperature - C 6 Data Sheet D434EJ2VDS
PACKAGE DRAWING (Unit: mm) TO-3P (MP-88) 2.±.2 6.. 5.7 MAX. 3.2±.2 4 2 3 4.5±.2 4.7 MAX..5 7. EQUIVALENT CIRCUIT Gate Drain Body Diode 9 MIN. 3.±.2 Gate Protection Diode Source 2.2±.2 5.45 5.45.±.2.6±..Gate 2.Drain 3.Source 4.Fin (Drain) 2.8±. Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. Data Sheet D434EJ2VDS 7
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