DATA SHEET SWITCHING N-CHANNEL POWER MOS FET MOS FIELD EFFECT TRANSISTOR 2SK335 DESCRIPTION The 2SK335 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES Super low on-state resistance RDS(on) = mω MAX. ( = V, ID = A) RDS(on)2 = 22 mω MAX. ( =. V, ID = A) Low Ciss: Ciss = 32 pf TYP. Built-in gate protection diode ORDERING INFORMATION PART NUMBER PACKAGE 2SK335 TO-22AB 2SK335-S TO-262 2SK335-ZJ TO-263 2SK335-Z TO-22SMD Note Note TO-22SMD package is produced only in Japan. (TO-22AB) ABSOLUTE MAXIMUM RATINGS (TA = 25 C) Drain to Source Voltage ( = V) VDSS 6 V Gate to Source Voltage (VDS = V) S ±2 V Drain Current (DC) (TC = 25 C) ID(DC) ±8 A Drain Current (pulse) Note ID(pulse) ±6 A Total Power Dissipation (TC = 25 C) PT 8 W Total Power Dissipation (TA = 25 C) PT.5 W Channel Temperature Tch 5 C Storage Temperature Tstg 55 to +5 C Single Avalanche Current Note2 IAS 3 A Single Avalanche Energy Note2 EAS 96 mj Notes. PW µs, Duty cycle % 2. Starting Tch = 25 C, VDD = 3 V, RG = 25 Ω, = 2 V (TO-262) (TO-22SMD) The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. Date Published Printed in Japan D6EJ3VDS (3rd edition) July 22 NS CP(K) The mark shows major revised points. 999, 2
ELECTRICAL CHARACTERISTICS (TA = 25 C) CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Zero gate Voltage Drain Current IDSS VDS = 6 V, = V µa Gate Leakage Current IGSS = ±2 V, VDS = V ± µa Gate Cut-off Voltage (off) VDS = V, ID = ma.5 2. 2.5 V Forward Transfer Admittance yfs VDS = V, ID = A 2 3 S Drain to Source On-state Resistance RDS(on) = V, ID = A mω RDS(on)2 =. V, ID = A 6 22 mω Input Capacitance Ciss VDS = V 32 pf Output Capacitance Coss = V 52 pf Reverse Transfer Capacitance Crss f = MHz 26 pf Turn-on Delay Time td(on) VDD = 3 V, ID = A 8 ns Rise Time tr = V 2 ns Turn-off Delay Time td(off) RG = Ω 2 ns Fall Time tf 35 ns Total Gate Charge QG VDD = 8 V 6 nc Gate to Source Charge QGS = V nc Gate to Drain Charge QGD ID = 8 A 6 nc Body Diode Forward Voltage VF(S-D) IF = 8 A, = V. V Reverse Recovery Time trr IF = 8 A, = V 6 ns Reverse Recovery Charge Qrr di/dt = A/µs 66 nc TEST CIRCUIT AVALANCHE CAPABILITY TEST CIRCUIT 2 SWITCHING TIME D.U.T. RG = 25 Ω PG. 5 Ω = 2 V BVDSS IAS ID VDD VDS L VDD PG. τ RG D.U.T. RL VDD Wave Form ID Wave Form ID % % 9% ID 9% 9% td(on) tr td(off) t f % Starting Tch τ = µ s Duty Cycle % ton toff TEST CIRCUIT 3 GATE CHARGE D.U.T. IG = 2 ma RL PG. 5 Ω VDD 2 Data Sheet D6EJ3VDS
TYPICAL CHARACTERISTICS (TA = 25 C ) dt - Percentage of Rated Power - % 8 6 2 DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 2 6 8 2 6 Tch - Channel Temperature - C PT - Total Power Dissipation - W 2 8 6 2 TOTAL POWER DISSIPATION vs. CASE TEMPERATURE 2 6 8 2 6 TC - Case Temperature - C FORWARD BIAS SAFE OPERATING AREA RDS(on) Limited (at = V) ID(DC) Power Dissipation Limited DC ms ID(pulse) ms µs PW = µs.. TC = 25 C Single Pulse VDS - Drain to Source Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH rth(t) - Transient Thermal Resistance - C/W.. µ µ Rth(ch-A) = 83.3 C/W Rth(ch-C) =.9 C/W Single Pulse m m m PW - Pulse Width - s Data Sheet D6EJ3VDS 3
FORWARD TRANSFER CHARACTERISTICS DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE TA = C 25 C 75 C 5 C 8 6 2 = V. V. VDS = V 2 3 5 6 - Gate to Source Voltage - V.2..6.8 VDS - Drain to Source Voltage - V yfs - Forward Transfer Admittance - S FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT VDS = V.... TA = 5 C 75 C 25 C C RDS(on) - Drain to Source On-state Resistance - mω 5 3 2 DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE ID = A - Gate to Source Voltage - V 5 5 2 RDS(on) - Drain to Source On-state Resistance - mω 3 2 DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT =. V V (off) - Gate to Source Threshold Voltage - V 3. 2.5 2..5..5 GATE TO SOURCE THRESHOLD VOLTAGE vs. CHANNEL TEMPERATURE VDS = V ID = ma 5 5 5 Tch - Channel Temperature - C Data Sheet D6EJ3VDS
RDS(on) - Drain to Source On-state Resistance - mω 3 2 DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 5 =. V V ID = A 5 5 Tch - Channel Temperature - C ISD - Diode Forward Current - A SOURCE TO DRAIN DIODE FORWARD VOLTAGE = V = V..5..5 VSD - Source to Drain Voltage - V Ciss, Coss, Crss - Capacitance - pf. CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE = V f = MHz VDS - Drain to Source Voltage - V Ciss Coss Crss td(on), tr, td(off), tf - Switching Time - ns. SWITCHING CHARACTERISTICS VDD = 3 V RG = Ω = V td(on) tf td(off) tr trr - Reverse Recovery Time - ns. REVERSE RECOVERY TIME vs. DRAIN CURRENT di/dt = A/ µ s = V VDS - Drain to Source Voltage - V 8 7 6 5 3 2 DYNAMIC INPUT/OUTPUT CHARACTERISTICS VDD = 8 V 3 V 2 V VDS 2 3 5 6 7 8 6 2 8 6 2 - Gate to Source Voltage - V IF - Drain Current - A QG - Gate Charge - nc Data Sheet D6EJ3VDS 5
IAS - Single Avalanche Current - A SINGLE AVALANCHE CURRENT vs. INDUCTIVE LOAD IAS = 3 A VDD = 3 V RG = 25 Ω = 2 V. µ µ L - Inductive Load - H EAS = 96 mj m m Energy Derating Factor - % 6 2 8 6 2 SINGLE AVALANCHE ENERGY DERATING FACTOR VDD = 3 V RG = 25 Ω = 2 V IAS 3 A 25 5 75 25 5 Starting Tch - Starting Channel Temperature - C 6 Data Sheet D6EJ3VDS
PACKAGE DRAWINGS (Unit: mm) ) TO-22AB (MP-25) 2) TO-262 (MP-25 Fin Cut) 3.±.3.6 MAX.. TYP. φ 3.6±.2.8 MAX..3±.2 TYP..±.5.8 MAX..3±.2.3±.2 2 3 5.9 MIN. 6. MAX. 5.5 MAX. 2.7 MIN..75±. 2.5 TYP. 2.5 TYP..5±.2 2.8±.2.Gate 2.Drain 3.Source.Fin (Drain).3±.2 2 3 8.5±.2 2.7 MIN..75±.3 2.5 TYP. 2.5 TYP..5±.2 2.8±.2.Gate 2.Drain 3.Source.Fin (Drain) 3) TO-263 (MP-25ZJ) ) TO-22SMD (MP-25Z) Note.±.5.±.2.7±.2 TYP. 2 3 8.5±.2 5.7±. 2.5 TYP. 2.5 TYP. 2.8±.2.5R TYP..8 MAX..3±.2.8R TYP..Gate 2.Drain 3.Source.Fin (Drain).5±.2.±.5.±.2 TYP. 2 3 8.5±.2.±. 3.±.5.75±.3 2.5 TYP. 2.5 TYP. 2.8±.2.5R TYP..8 MAX..3±.2.8R TYP..Gate 2.Drain 3.Source.Fin (Drain).5±.2 EQUIVALENT CIRCUIT Gate Drain Body Diode Remark Note This package is produced only in Japan. The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. Gate Protection Diode Source Data Sheet D6EJ3VDS 7
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