DATA SHEET SWITCHING N-CHANNEL POWER MOS FET MOS FIELD EFFECT TRANSISTOR 2SK38 DESCRIPTION The 2SK38 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES Super low on-state resistance: RDS(on) = 3 mω MAX. ( = V, ID = 25 A) RDS(on)2 = 36 mω MAX. ( =.5 V, ID = 25 A) Low Ciss: Ciss = 36 pf TYP. Built-in gate protection diode ORDERING INFORMATION PART NUMBER PACKAGE 2SK38 TO-22AB 2SK38-S TO-262 2SK38-ZJ TO-263 2SK38-Z TO-22SMD Note Note TO-22SMD package is produced only in Japan. (TO-22AB) ABSOLUTE MAXIMUM RATINGS (TA = 25 C) Drain to Source Voltage ( = V) S V Gate to Source Voltage ( = V) S ±2 V Drain Current (DC) (TC = 25 C) ID(DC) ±5 A Drain Current (pulse) Note ID(pulse) ± A Total Power Dissipation (TC = 25 C) PT 8 W Total Power Dissipation (TA = 25 C) PT2.5 W Channel Temperature Tch 5 C Storage Temperature Tstg 55 to +5 C Single Avalanche Current Note2 IAS 3 A Single Avalanche Energy Note2 EAS 6 mj Notes. PW µs, Duty cycle % 2. Starting Tch = 25 C, RG = 25 Ω, = 2 V (TO-262) (TO-263, TO-22SMD) THERMAL RESISTANCE Channel to Case Rth(ch-C).8 C/W Channel to Ambient Rth(ch-A) 83.3 C/W The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. Date Published Printed in Japan D578EJ (st edition) December 2 NS CP(K) 2
2SK38 ELECTRICAL CHARACTERISTICS (TA = 25 C) CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Zero Gate Voltage Drain Current IDSS = V, = V µa Gate Leakage Current IGSS = ±2 V, = V ± µa Gate Cut-off Voltage (off) = V, ID = ma.5 2. 2.5 V Forward Transfer Admittance yfs = V, ID = 25 A 7 3 S Drain to Source On-state Resistance RDS(on) = V, ID = 25 A 25 3 mω RDS(on)2 =.5 V, ID = 25 A 27 36 mω Input Capacitance Ciss = V 36 pf Output Capacitance Coss = V 36 pf Reverse Transfer Capacitance Crss f = MHz 9 pf Turn-on Delay Time td(on) VDD = 5 V, ID = 25 A 5 ns Rise Time tr = V ns Turn-off Delay Time td(off) RG = Ω 68 ns Fall Time tf 6. ns Total Gate Charge QG VDD = 8 V 7 nc Gate to Source Charge QGS = V nc Gate to Drain Charge QGD ID = 5 A 2 nc Body Diode Forward Voltage VF(S-D) IF = 5 A, = V. V Reverse Recovery Time trr IF = 5 A, = V 7 ns Reverse Recovery Charge Qrr di/dt = A/µs 8 nc TEST CIRCUIT AVALANCHE CAPABILITY TEST CIRCUIT 2 SWITCHING TIME PG. = 2 V RG = 25 Ω 5 Ω D.U.T. L VDD PG. RG D.U.T. RL VDD Wave Form % 9% 9% 9% VDD ID IAS BS τ Wave Form % % td(on) tr td(off) tf Starting Tch τ = µs Duty Cycle % ton toff TEST CIRCUIT 3 GATE CHARGE PG. D.U.T. IG = 2 ma 5 Ω RL VDD 2 Data Sheet D578EJ
2SK38 TYPICAL CHARACTERISTICS (TA = 25 C) 2 DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA TOTAL POWER DISSIPATION vs. CASE TEMPERATURE dt - Percentage of Rated Power - % 8 6 2 PT - Total Power Dissipation - W 2 8 6 2 2 6 8 2 6 TC - Case Temperature - C 2 6 8 2 6 TC - Case Temperature - C FORWARD BIAS SAFE OPERATING AREA RDS(on) Limited ID(DC) (at = V) ms ms DC Power Dissipation Limited ID(pulse) µs PW = µs TC = 25 C Single Pulse.. - Drain to Source Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH rth(t) - Transient Thermal Resistance - C/W.. µ µ Rth(ch-A) = 83.3 C/W Rth(ch-C) =.8 C/W TC = 25 C Single Pulse m m m PW - Pulse Width - s Data Sheet D578EJ 3
2SK38 FORWARD TRANSFER CHARACTERISTICS DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE TA = C 25 C 75 C 5 C 8 6 2 = V.5 V = V. 2 3 5 - Gate to Source Voltage - V 2 3 5 - Drain to Source Voltage - V yfs - Forward Transfer Admittance - S FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT = V.... TA = 5 C 75 C 25 C C RDS(on) - Drain to Source On-state Resistance - mω 5 3 2 DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE ID = 5 A 25 A 5 5 2 - Gate to Source Voltage - V RDS(on) - Drain to Source On-state Resistance - mω 8 6 2. DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT =.5 V V (off) - Gate Cut-off Voltage - V. 3. 2.. GATE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE Tch - Channel Temperature - C = V ID = ma 5 5 5 Data Sheet D578EJ
2SK38 RDS(on) - Drain to Source On-state Resistance - mω 7 6 5 3 2 DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 5 =.5 V V 5 5 Tch - Channel Temperature - C ID = 25 A ISD - Diode Forward Current - A SOURCE TO DRAIN DIODE FORWARD VOLTAGE = V V..5..5 VSD - Source to Drain Voltage - V Ciss, Coss, Crss - Capacitance - pf CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE Crss Ciss = V f = MHz.. - Drain to Source Voltage - V Coss td(on), tr, td(off), tf - Switching Time - ns VDD = 5 V = V RG = Ω. SWITCHING CHARACTERISTICS td(on) tr td(off) tf trr - Reverse Recovery Time - ns. REVERSE RECOVERY TIME vs. DRAIN CURRENT IF - Drain Current - A di/dt = A/ns = V - Drain to Source Voltage - V 8 6 2 DYNAMIC INPUT/OUTPUT CHARACTERISTICS VDD = 8 V 5 V 2 V 2 ID = 83 A 6 8 QG - Gate Charge - nc 8 6 2 - Gate to Source Voltage - V Data Sheet D578EJ 5
2SK38 IAS - Single Avalanche Current - A SINGLE AVALANCHE CURRENT vs. INDUCTIVE LOAD IAS = 3 A VDD = 5 V = 2 V RG = 25 Ω Starting Tch = 25 C.. EAS = 6 mj L - Inductive Load - mh Energy Derating Factor - % 6 2 8 6 2 SINGLE AVALANCHE ENERGY DERATING FACTOR 25 5 75 VDD = 5 V RG = 25 Ω = 2 V IAS 3 A 25 5 Starting Tch - Starting Channel Temperature - C 6 Data Sheet D578EJ
2SK38 PACKAGE DRAWINGS (Unit: mm) ) TO-22AB(MP-25) 2) TO-262(MP-25 Fin Cut) 3.±.3.6 MAX.. TYP. φ 3.6±.2.8 MAX..3±.2 TYP..±.5.8 MAX..3±.2.3±.2 2 3 5.9 MIN. 6. MAX. 5.5 MAX. 2.7 MIN..75±. 2.5 TYP. 2.5 TYP..5±.2 2.8±.2.Gate 2.Drain 3.Source.Fin (Drain).3±.2 2 3 8.5±.2 2.7 MIN..75±.3 2.5 TYP. 2.5 TYP..5±.2 2.8±.2.Gate 2.Drain 3.Source.Fin (Drain) 3) TO-263 (MP-25ZJ) ) TO-22SMD(MP-25Z) Note TYP..8 MAX..3±.2 TYP..8 MAX..3±.2.±.5 2 3 8.5±.2.±.5 2 3 8.5±.2.±.2.7±.2 5.7±. 2.5 TYP. 2.5 TYP..5R TYP..8R TYP..5±.2.±. 3.±.5.±.2.75±.3 2.5 TYP. 2.5 TYP..5R TYP..8R TYP..5±.2 2.8±.2.Gate 2.Drain 3.Source.Fin (Drain) 2.8±.2.Gate 2.Drain 3.Source.Fin (Drain) EQUIVALENT CIRCUIT Note This package is produced only in Japan. Gate Drain Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, Body Diode an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. Gate Protection Diode Source Data Sheet D578EJ 7
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