N- and P-Channel 3 V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) ( ) I D (A) a Q g (Typ.) N-Channel 3.47 at V GS = V 6..65 at V GS = 4.5 V 5.2 2.75 P-Channel - 3.89 at V GS = - V - 4.3.4 at V GS = - 4.5 V - 3.4 4. FEATURES Halogen-free According to IEC 6249-2-2 Definition TrenchFET Power MOSFET % R g Tested % UIS Tested Compliant to RoHS Directive 22/95/EC SO-8 S 8 D APPLICATIONS DC/DC Converter Load Switch D S 2 G 2 7 D S 2 3 6 D 2 G G 2 G 2 4 5 D 2 Top View S D 2 Ordering Information: Si4532CDY-T-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (T A = 25 C, unless otherwise noted) N-Channel MOSFET P-Channel MOSFET Parameter Symbol N-Channel P-Channel Unit Drain-Source Voltage V DS 3-3 V Gate-Source Voltage V GS ± 2 T C = 25 C 6. - 4.3 T C = 7 C 4.9-3.4 Continuous Drain Current (T J = 5 C) I D T A = 25 C 4.9 b, c - 3.4 b, c T A = 7 C 3.9 b, c - 2.7 b, c Pulsed Drain Current ( µs Pulse Width) I DM 24-5 A T C = 25 C 2.3-2.3 Source-Drain Current Diode Current I S T A = 25 C.5 b, c -.5 b, c Pulsed Source-Drain Current I SM 24-2 Single Pulse Avalanche Current I AS 7 8 L =. mh Single Pulse Avalanche Energy E AS 2.5 3.2 mj T C = 25 C 2.78 2.78 T C = 7 C.78.78 Maximum Power Dissipation P D W T A = 25 C.78 b, c.78 b, c T A = 7 C.4 b, c.4 b, c Operating Junction and Storage Temperature Range T J, T stg - 55 to 5 C THERMAL RESISTANCE RATINGS N-Channel P-Channel Parameter Symbol Typ. Max. Typ. Max. Maximum Junction-to-Ambient b, d t s R thja 57 7 57 7 Maximum Junction-to-Foot (Drain) Steady State R thjf 37 45 37 45 Notes: a. Based on T C = 25 C. b. Surface mounted on " x " FR4 board. c. t = s. d. Maximum under steady state conditions is 2 C/W (N-Channel) and C/W (P-Channel). Unit C/W S-652-Rev. B, -Apr- THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT /doc?9
SPECIFICATIONS (T J = 25 C, unless otherwise noted) Parameter Symbol Test Conditions Min. Typ. a Max. Unit Static V GS = V, I D = 25 µa N-Ch 3 Drain-Source Breakdown Voltage V DS V GS = V, I D = - 25 µa P-Ch - 3 I D = 25 µa N-Ch 33 V DS Temperature Coefficient V DS /T J I D = - 25 µa P-Ch - 33 I D = 25 µa N-Ch - 5.8 V GS(th) Temperature Coefficient V GS(th) /T J II D = - 25 µa P-Ch 4.5 V DS = V GS, I D = 25 µa N-Ch. 3. Gate-Source Threshold Voltage V GS(th) V DS = V GS, I D = - 25 µa P-Ch -. - 3. N-Ch Gate-Body Leakage I GSS V DS = V, V GS = ± 2 V P-Ch - V DS = 3 V, V GS = V N-Ch V DS = - 3 V, V GS = V P-Ch - Zero Gate Voltage Drain Current I DSS V DS = 3 V, V GS = V, T J = 55 C N-Ch 5 V DS = - 3 V, V GS = V, T J = 55 C P-Ch - 5 V DS = 5 V, V GS = V On-State Drain Current b N-Ch 2 I D(on) V DS = - 5 V, V GS = - V P-Ch - 2 V GS = V, I D = 3.5 A N-Ch.38.47 V GS = - V, I D = - 3.5 A Drain-Source On-State Resistance b P-Ch.73.89 R DS(on) V GS = 4.5 V, I D = 2.8 A N-Ch.52.65 V GS = - 4.5 V, I D = - 2.5 A P-Ch.3.4 V DS = 5 V, I D = 2.5 A Forward Transconductance b N-Ch 7 g fs V DS = - 5 V, I D = - 3.5 A P-Ch 7 Dynamic a N-Ch 35 Input Capacitance C iss N-Channel P-Ch 34 V DS = 5 V, V GS = V, f = MHz N-Ch 65 Output Capacitance C oss P-Channel P-Ch 67 V DS = - 5 V, V GS = V, f = MHz N-Ch 29 Reverse Transfer Capacitance C rss P-Ch 5 V DS = 5 V, V GS = V, I D = 2.5 A N-Ch 6 9 V Total Gate Charge Q DS = - 5 V, V GS = - V, I D = - 2.5 A P-Ch 7.8 2 g N-Ch 2.75 4.5 N-Channel P-Ch 4. 6.2 V DS = 5 V, V GS = 4.5 V I D = 2.5 A N-Ch.3 Gate-Source Charge Q gs P-Channel P-Ch.3 V DS = - 5 V, V GS = - 4.5 V, I D = - 2.5 A N-Ch.9 Gate-Drain Charge Q gd P-Ch.8 Gate Resistance R g f = MHz N-Ch.6 3. 6.2 P-Ch 2. 2 V mv/ C V na µa A S pf nc 2 S-652-Rev. B, -Apr- THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT /doc?9
SPECIFICATIONS (T J = 25 C, unless otherwise noted) Parameter Symbol Test Conditions Min. Typ. a Max. Unit Dynamic a N-Ch 7 Turn-On Delay Time t d(on) N-Channel P-Ch 5.5 V DD = 5 V, R L = 5 N-Ch 2 8 Rise Time t r I D A, V GEN = V, R g = P-Ch 3 25 Turn-Off Delay Time t d(off) P-Channel N-Ch 4 25 V DD = - 5 V, R L = 5 P-Ch 7 3 I D - A, V GEN = - V, R g = N-Ch 6 Fall Time t f P-Ch 7.7 5 ns N-Ch 6 3 Turn-On Delay Time t d(on) N-Channel P-Ch 4 6 V DD = 5 V, R L = 5 N-Ch 6 3 Rise Time t r I D A, V GEN = 4.5 V, R g = P-Ch 4 6 P-Channel N-Ch 9 8 Turn-Off Delay Time t d(off) V DD = - 5 V, R L = 5 P-Ch 2 4 Fall Time t f I D - A, V GEN = - 4.5 V, R g = N-Ch 9 8 P-Ch 7 3 Drain-Source Body Diode Characteristics Continuous Source-Drain Diode N-Ch 2.3 I Current S T C = 25 C P-Ch - 2.3 Pulse Diode Forward Current a N-Ch 24 I SM P-Ch - 2 A I S =.25 A N-Ch.8.2 Body Diode Voltage V SD I S = -.75 A P-Ch -.8 -.2 V N-Ch 4 2 Body Diode Reverse Recovery Time t rr P-Ch 7 3 ns N-Channel N-Ch 6 Body Diode Reverse Recovery Charge Q rr I F =.25 A, di/dt = A/µs, T J = 25 C P-Ch 2 nc P-Channel N-Ch 9 Reverse Recovery Fall Time t a I F = - 2.5 A, di/dt = - A/µs, T J = 25 C P-Ch 2 N-Ch 5 Reverse Recovery Rise Time t b P-Ch 5 ns Notes: a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width 3 µs, duty cycle 2 %. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S-652-Rev. B, -Apr- 3 THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT /doc?9
N-CHANNEL TYPICAL CHARACTERISTICS (25 C, unless otherwise noted) 24.2 V GS =V thru 6 V. 8 V GS =5V 2 6 V GS =4V 2 4 6 8.8.6 T C = 25 C.4 T C = 25 C.2 T C = - 55 C. 2 3 4 5 V DS - Drain-to-Source Voltage (V) V GS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics. 4 - On-Resistance ( ) R DS(on).8.6.4.2 V GS = 4.5 V V GS = V C - Capacitance (pf) 35 3 25 2 5 5 C rss C iss C oss. 2 4 6 8 2 4 6 On-Resistance vs. Drain Current and Gate Voltage 5 5 2 25 3 V DS - Drain-to-Source Voltage (V) Capacitance.7 - Gate-to-Source Voltage (V) V GS 8 6 4 2 I D =2.5A V DS =7.5V V DS =5V V DS =22.5V R DS(on) - On-Resistance (Normalized).5.3..9 I D =6A V GS =V V GS =4.5V 2 4 6 Q g - Total Gate Charge (nc) Gate Charge.7-5 - 25 25 5 75 25 5 T J -Junction Temperature ( C) On-Resistance vs. Junction Temperature 4 S-652-Rev. B, -Apr- THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT /doc?9
N-CHANNEL TYPICAL CHARACTERISTICS (25 C, unless otherwise noted).25 I S - Source Current (A) T J = 5 C T J = 25 C - On-Resistance (Ω) R DS(on).2.5..5 T J = 25 C...2.4.6.8..2 V SD - Source-to-Drain Voltage (V) Source-Drain Diode Forward Voltage.4 T J =25 C. 2 3 4 5 6 7 8 9 V GS - Gate-to-Source Voltage (V) On-Resistance vs. Gate-to-Source Voltage 5.2 I D = 25 µa 4 Variance (V) V GS(th). -.2 -.4 Power (W) 3 2 -.6 -.8-5 - 25 25 5 75 25 5 T J - Temperature ( C) Threshold Voltage... Time (s) Single Pulse Power, Junction-to-Ambient - Drain Current (A) I D. Limited by R DS(on) * T A = 25 C Single Pulse BVDSS Limited µs µs ms ms ms s s s, DC.. V DS - Drain-to-Source Voltage (V) * V GS > minimum V GS at which R DS(on) is specified Safe Operating Area, Junction-to-Ambient S-652-Rev. B, -Apr- 5 THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT /doc?9
N-CHANNEL TYPICAL CHARACTERISTICS (25 C, unless otherwise noted) 8 6 4 2 Package Limited 25 5 75 25 5 T C - Case Temperature ( C) Current Derating* 3.5.5 2.8.2 Power (W) 2..4 Power (W).9.6.7.3. 25 5 75 25 5. 25 5 75 25 5 T C - Case Temperature ( C) Power Derating, Junction-to-Foot T A -Ambient Temperature ( C) Power Derating, Junction-to-Ambient * The power dissipation P D is based on T J(max) = 5 C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. 6 S-652-Rev. B, -Apr- THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT /doc?9
N-CHANNEL TYPICAL CHARACTERISTICS (25 C, unless otherwise noted) Duty Cycle =.5 Normalized Effective Transient Thermal Impedance..2..5.2 3. T JM -T A =P DM Z (t) Single Pulse thja 4. Surface Mounted. -4-3 -2 - Square Wave Pulse Duration (s) Notes: Normalized Thermal Transient Impedance, Junction-to-Ambient P DM t t 2 t. Duty Cycle, D = t 2 2. Per Unit Base = R thja = 2 C/W Normalized Effective Transient Thermal Impedance. Duty Cycle =.5.2..5.2. -4 Single Pulse -3-2 - Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot S-652-Rev. B, -Apr- 7 THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT /doc?9
P-CHANNEL TYPICAL CHARACTERISTICS (25 C, unless otherwise noted) 5 V GS =V thru 6 V V GS =5V 2. 2.5 9 6 3 V GS =4V V GS =3V..5 T C = 25 C T C = 25 C T C = - 55 C..5..5 2. V DS - Drain-to-Source Voltage (V) Output Characteristics.2...5 2. 2.5 3. 3.5 4. V GS - Gate-to-Source Voltage (V) Transfer Characteristics 6 - On-Resistance (Ω) R DS(on).5..5 V GS =4.5V V GS =V C - Capacitance (pf) 45 3 5 C oss C iss. 3 6 9 2 5 On-Resistance vs. Drain Current and Gate Voltage C rss 6 2 8 24 3 V DS - Drain-to-Source Voltage (V) Capacitance.8 - Gate-to-Source Voltage (V) 8 6 4 I D =2.5A V DS =7.5V V DS =5V V DS =22.5V R DS(on) - On-Resistance (Normalized).6.4.2. I D =3.2A V GS =V V GS =4.5V V GS 2.8 2 4 6 8 Q g - Total Gate Charge (nc) Gate Charge.6-5 - 25 25 5 75 25 5 T J -Junction Temperature ( C) On-Resistance vs. Junction Temperature 8 S-652-Rev. B, -Apr- THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT /doc?9
P-CHANNEL TYPICAL CHARACTERISTICS (25 C, unless otherwise noted).4 T J = 25 C I D = 3.5 A - Source Current (A) I S.. T J = 5 C T J = - 5 C - On-Resistance (Ω) R DS(on).3.2. T J = 25 C T J = 25 C...3.6.9.2.5 V SD -Source-to-Drain Voltage (V) Source-Drain Diode Forward Voltage. 2 4 6 8 V GS - Gate-to-Source Voltage (V) On-Resistance vs. Gate-to-Source Voltage.6 5.4 I D = 25 µa 4 Variance (V) V GS(th).2. I D =ma Power (W) 3 2 -.2 -.4-5 - 25 25 5 75 25 5 T J - Temperature ( C) Threshold Voltage... Time (s) Single Pulse Power, Junction-to-Ambient - Drain Current (A) I D. Limited by R DS(on) * T A = 25 C Single Pulse BVDSS Limited µs µs ms ms ms s s s, DC.. V DS - Drain-to-Source Voltage (V) * V GS > minimum V GS at which R DS(on) is specified Safe Operating Area, Junction-to-Ambient S-652-Rev. B, -Apr- 9 THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT /doc?9
P-CHANNEL TYPICAL CHARACTERISTICS (25 C, unless otherwise noted) 5 4 3 2 25 5 75 25 5 T C - Case Temperature ( C) Current Derating* 3.5.5 2.8.2 Power (W) 2..4 Power (W).9.6.7.3. 25 5 75 25 5. 25 5 75 25 5 T C - Case Temperature ( C) Power Derating, Junction-to-Foot T A -Ambient Temperature ( C) Power Derating, Junction-to-Ambient * The power dissipation P D is based on T J(max) = 5 C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. S-652-Rev. B, -Apr- THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT /doc?9
P-CHANNEL TYPICAL CHARACTERISTICS (25 C, unless otherwise noted) Duty Cycle =.5 Normalized Effective Transient Thermal Impedance..2..5.2 3. T JM -T A =P DM Z (t) Single Pulse thja 4. Surface Mounted. -4-3 -2 - Square Wave Pulse Duration (s) Notes: Normalized Thermal Transient Impedance, Junction-to-Ambient P DM t t 2 t. Duty Cycle, D = t 2 2. Per Unit Base = R thja = C/W Normalized Effective Transient Thermal Impedance. Duty Cycle =.5.2..5.2. -4 Single Pulse -3-2 - Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see /ppg?6485. S-652-Rev. B, -Apr- THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT /doc?9
Package Information SOIC (NARROW): 8-LEAD JEDEC Part Number: MS-2 8 7 6 5 E H 2 3 4 S D A.25 mm (Gage Plane) h x 45 C All Leads e B A L q. mm.4" MILLIMETERS INCHES DIM Min Max Min Max A.35.75.53.69 A..2.4.8 B.35.5.4.2 C.9.25.75. D 4.8 5..89.96 E 3.8 4..5.57 e.27 BSC.5 BSC H 5.8 6.2.228.244 h.25.5..2 L.5.93.2.37 q 8 8 S.44.64.8.26 ECN: C-6527-Rev. I, -Sep-6 DWG: 5498 Document Number: 792 -Sep-6
Application Note 826 RECOMMENDED MINIMUM PADS FOR SO-8.72 (4.369).28 (.7) APPLICATION NOTE.47 (.94).246 (6.248).52 (3.86).22 (.559).5 (.27) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Return to Index Document Number: 7266 22 Revision: 2-Jan-8
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