PC73xNSZXF Series DIP pin Includes Base Terminal Connection Photocoupler Description PC73xNSZXF Series contains an IRED optically coupled to a phototransistor. It is packaged in a pin DIP, available in SMT gullwing lead-form option. Input-output isolation voltage(rms) is 5.k. Collector-emitter voltage is 8 and CTR is 5% to % at input current of 5mA. Agency approvals/compliance. Recognized by UL577 (Double protection isolation), file No. E438 (as model No. PC73) 2. Approved by DE, DIN EN747-5-2 ( ) (as an option), file No. 4889 (as model No. PC73) 3. Package resin : UL flammability grade (94-) ( ) DIN EN747-5-2 : successor standard of DIN DE884 Features. pin DIP package 2. Double transfer mold package (Ideal for Flow Soldering) 3. With base terminal 4. High collector-emitter voltage ( CEO :8) 5. High isolation voltage between input and output ( iso(rms) : 5.k). Lead-free and RoHS directive compliant Applications. Home appliances 2. Programmable controllers 3. Personal computer peripherals Notice The content of data sheet is subject to change without prior notice. In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that may occur in equipment using any SHARP devices shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest device specification sheets before using any SHARP device. Date Jun. 3. 25 SHARP Corporation
Internal Connection Diagram 2 5 3 4 2 3 4 5 Anode Cathode NC Emitter Collector Base Outline Dimensions (Unit : mm). Through-Hole [ex. PC73xNSZXF] 2. Through-Hole (DE option) [ex. PC73xYSZXF]. ±.2.2 ±.3 SHARP "S" Anode 5 4 PC73 2 3 7.2 ±.5.5 ±.5 Date code Rank Factory identification 7.2 ±.3. ±.2.2 ±.3 SHARP "S" Anode 5 4 PC73 4 2 3 7.2 ±.3.5 ±.5 DE Identification Rank Factory identification Date code 7.2 ±.3 2.9 ±.5 3.5 ±.5.5 TYP. Epoxy resin 2.9 ±.5 3.5 ±.5.5 TYP. Epoxy resin 2.54 ±.25.5 ±. 3.25 ±.5 Product mass : approx..3g θ θ : to 3 θ 2.54 ±.25.5 ±. 3.25 ±.5 Product mass : approx..3g θ θ : to 3 θ 3. SMT Gullwing Lead-Form [ex. PC73xNIPXF] 4. SMT Gullwing Lead-Form (DE option) [ex. PC73xYIPXF] SHARP "S" Anode. ±.2.2 ±.3 5 4 PC73 2 3.5 ±.5 Rank Factory identification Date code SHARP "S". ±.2.2 ±.3 Anode 5 4 PC73 4.5 ±.5 2 3 Rank DE Identification Factory identification Date code 7.2 ±.5 7.2 ±.3 7.2 ±.5 7.2 ±.3 3.5 ±.5.2 ±..35 ±.25 3.5 ±.5.2 ±..35 ±.25 2.54 ±.25. +.4 Epoxy resin. +.5. +.4 2.54 ±.25. +.4 Epoxy resin. +.5. +.4 Product mass : approx..35g Product mass : approx..35g Plating material : SnCu (Cu : TYP. 2%) 2
Date code (2 digit) st digit Year of production 2nd digit Month of production A.D. 99 99 992 993 994 995 99 997 998 999 2 2 Mark A B C D E F H J K L M N A.D 22 23 24 25 2 27 28 29 2 2 22 Mark P R S T U W X A B C Month January February March April May June July August September October November December Mark 2 3 4 5 7 8 9 O N D repeats in a 2 year cycle Factory identification Factory identification Mark no Country of origin Japan Indonesia China * This factory ing is for identification purpose only. Please Contact the local SHARP sales reprsentative to see the actual status of the production. Rank Refer to the Model Line-up 3
Absolute Maximum Ratings Input (T a =25 C) Parameter Symbol Rating Unit Forward current I F 5 ma * Peak forward current A Reverse voltage Power dissipation Collector-emitter voltage Emitter-collector voltage Collector-base voltage Emitter-base voltage Collector current Collector power dissipation Total power dissipation Operating temperature Storage temperature *2 Isolation voltage *3 Soldering temperature Output * Pulse width µs, Duty ratio :. *2 4 to %RH, AC for minute, f=hz *3 For s I FM R P CEO ECO CBO EBO I C P C P tot T opr T stg iso (rms) T sol 7 8 8 5 5 7 25 to + 4 to +25 mw ma mw mw C C 5 k 2 C Electro-optical Characteristics Input Output Transfer characteristics Parameter Forward voltage Terminal capacitance Collector dark current Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector-base breakdown voltage Current transfer ratio Collector-emitter saturation voltage Isolation resistance Floating capacitance Cut-off frequency Response time Rise time Fall time Symbol F C t I CEO B CEO B EBO B CBO I C CE (sat) R ISO C f f C t r t f Conditions I F =2mA =, f=khz CE =5, I F = I C =.ma, I F = I E =µa, I F = I C =.ma, I F = I F =5mA, CE =5 I F =2mA, I C =ma DC5, 4 to %RH =, f=mhz CE =5, I C =2mA, R L =Ω 3dB MIN. 8 8 2.5 5 TYP..2 3.. 8 4 3 MAX..4 Peak forward voltage FM I FM =.5A 3. Reverse current I R R =4 µa CE =2, I C =2mA, R L =Ω 25 3.2. 8 8 (T a =25 C) Unit pf na ma Ω pf khz µs µs 4
Model Line-up Lead Form Package DIN EN747-5-2 Model No. Through-Hole SMT Gullwing Sleeve Taping 5pcs / sleeve pcs / reel Approved Approved Approved PC73NSZXF PC73NSZXF PC732NSZXF PC733NSZXF PC735NSZXF PC73NSZXF PC738NSZXF PC73YSZXF PC73YSZXF PC732YSZXF PC733YSZXF PC735YSZXF PC73YSZXF PC738YSZXF PC73NIZXF PC73NIZXF PC732NIZXF PC733NIZXF PC735NIZXF PC73NIZXF PC738NIZXF PC73YIZXF PC73YIZXF PC732YIZXF PC733YIZXF PC735YIZXF PC73YIZXF PC738YIZXF PC73NIPXF PC73NIPXF PC732NIPXF PC733NIPXF PC735NIPXF PC73NIPXF PC738NIPXF PC73YIPXF PC73YIPXF PC732YIPXF PC733YIPXF PC735YIPXF PC73YIPXF PC738YIPXF Rank with or without A B C A or B B or C A, B or C I C [ma] (I F =5mA, CE =5, T a =25 C) 2.5 to 3. 4. to 8..5 to 3.. to 2. 4. to 3..5 to 2. 4. to 2. Please contact a local SHARP sales representative to inquire about production status. 5
Fig. Forward Current vs. Ambient Temperature Fig.2 Diode Power Dissipation vs. Ambient Temperature Forward current IF (ma) 5 4 3 2 Diode power dissipation P (mw) 8 7 4 2-25 25 5 55 75 25 25 25 5 55 75 25 Fig.3 Collector Power Dissipation vs. Ambient Temperature 2 Fig.4 Total Power Dissipation vs. Ambient Temperature 25 Collector power dissipation PC (mw) 5 5 Total power dissipation Ptot (mw) 2 7 5 5 25 25 5 75 25 25 25 5 75 25 Fig.5 Peak Forward Current vs. Duty Ratio Fig. Forward Current vs. Forward oltage Peak forward current IFM (A). Pulse width µs Ta=25 C Forward current IF (ma) T a =75 C 5 C 25 C C 25 C. 3 2.5.5 2 2.5 3 3.5 Duty ratio Forward voltage F ()
Fig.7 Current Transfer Ratio vs. Forward Current Current transfer ratio CTR (%) Relative current transfer ratio (%) 2 8 4 2 8 4 2 Fig.9 Relative Current Transfer Ratio vs. Ambient Temperature 5 5 R BE = 5kΩ Forward current I F (ma) CE =5 T a =25 C kω I F =5mA CE =5 R BE = 25 25 5 75 Fig.8 Collector Current vs. Collectoremitter oltage Collector current IC (ma) Fig. Collector - emitter Saturation oltage vs. Ambient Temperature Collector-emitter saturation voltage CE(sat) () 3 25 2 5 5.4.2..8..4.2 25 I F =3mA R BE = T a =25 C I F =2mA I C =ma R BE = 2mA ma 5mA 2 3 4 5 7 8 9 Collector-emitter voltage CE () 2 4 8 P C (MAX.) Fig. Collector Dark Current vs. Ambient Temperature 5 CE =5 R BE = Fig.2 Collector-base Dark Current vs. Ambient Temperature 8 CB =5 R BE = Collector dark current ICEO (A) 7 8 9 Collector dark current ICBO (A) 9 25 25 5 75 25 5 75 25 7
Fig.3 Response Time vs. Load Resistance Fig.4 Test Circuit for Response Time Response time (µs) CE =2 I C =2mA R BE = T a =25 C t d t r t f t s t d t s CC Input Output Input R R L Output CE D t r Please refer to the conditions in Fig.3 t f % 9%.. Load resistance R L (kω) Fig.5 Frequency Response Fig. Test Circuit for Frequency Response oltage gain Av (db) CE =5 I C =2mA R BE = T a =25 C R L =kω kω Ω R D R L CC Output CE 2 Please refer to the conditions in Fig.5 Frequency f (khz) Res : Please be aware that all data in the graph are just for reference and not for guarantee. 8
Design Considerations Design guide While operating at I F <.ma, CTR variation may increase. Please make design considering this fact. This product is not designed against irradiation and incorporates non-coherent IRED. Degradation In general, the emission of the IRED used in photocouplers will degrade over time. In the case of long term operation, please take the general IRED degradation (5% degradation over 5 years) into the design consideration. Recommended Foot Print (reference) 8.2.7 2.54 2.54 2.2 (Unit : mm) For additional design assistance, please review our corresponding Optoelectronic Application Notes. 9
Manufacturing Guidelines Soldering Method Reflow Soldering: Reflow soldering should follow the temperature profile shown below. Soldering should not exceed the curve of temperature profile and time. Please don't solder more than twice. ( C) 3 Terminal : 2 C peak ( package surface : 25 C peak) 2 Preheat 5 to 8 C, 2s or less Reflow 22 C or more, s or less 2 3 4 (min) Flow Soldering : Due to SHARP's double transfer mold construction submersion in flow solder bath is allowed under the below listed guidelines. Flow soldering should be completed below 27 C and within s. Preheating is within the bounds of to 5 C and 3 to 8s. Please don't solder more than twice. Hand soldering Hand soldering should be completed within 3s when the point of solder iron is below 4 C. Please don't solder more than twice. Other notices Please test the soldering method in actual condition and make sure the soldering works fine, since the impact on the junction between the device and PCB varies depending on the tooling and soldering conditions.
Cleaning instructions Solvent cleaning: Solvent temperature should be 45 C or below Immersion time should be 3 minutes or less PC73xNSZXF Series Ultrasonic cleaning: The impact on the device varies depending on the size of the cleaning bath, ultrasonic output, cleaning time, size of PCB and mounting method of the device. Therefore, please make sure the device withstands the ultrasonic cleaning in actual conditions in advance of mass production. Recommended solvent materials: Ethyl alcohol, Methyl alcohol and Isopropyl alcohol In case the other type of solvent materials are intended to be used, please make sure they work fine in actual using conditions since some materials may erode the packaging resin. Presence of ODC This product shall not contain the following materials. And they are not used in the production process for this product. Regulation substances : CFCs, Halon, Carbon tetrachloride,..-trichloroethane (Methylchloroform) Specific brominated flame retardants such as the PBBOs and PBBs are not used in this product at all. This product shall not contain the following materials banned in the RoHS Directive (22/95/EC). Lead, Mercury, Cadmium, Hexavalent chromium, Polybrominated biphenyls (PBB), Polybrominated diphenyl ethers (PBDE).
Package specification Sleeve package Package materials Sleeve : HIPS (with anti-static material) Stopper : Styrene-Elastomer Package method MAX. 5 pcs. of products shall be packaged in a sleeve. Both ends shall be closed by tabbed and tabless stoppers. The product shall be arranged in the sleeve with its anode on the tabless stopper side. MAX. 2 sleeves in one case. Sleeve outline dimensions 2. 52 ±2 5.8.8.7 (Unit : mm) 2
Tape and Reel package Package materials Carrier tape : A-PET (with anti-static material) Cover tape : PET (three layer system) Reel : PS Carrier tape structure and Dimensions F E D G I J H H A B C K C D E Dimensions List A B. ±.3 7.5 ±..75 ±. 2. ±. H I J K.4 ±..4 ±.5 4.2 ±. 7.8 ±. 2. ±. 5 MAX. (Unit:mm) F G 4. ±. φ.5 +. Reel structure and Dimensions e d g c a f b Dimensions List (Unit : mm) a 33 b 7.5 ±.5 c ±. d 3 ±.5 e 23 ±. f 2. ±.5 g 2. ±.5 Direction of product insertion Pull-out direction [Packing : pcs/reel] 3
Important Notices The circuit application examples in this publication are provided to explain representative applications of SHARP devices and are not intended to guarantee any circuit design or license any intellectual property rights. SHARP takes no responsibility for any problems related to any intellectual property right of a third party resulting from the use of SHARP's devices. Contact SHARP in order to obtain the latest device specification sheets before using any SHARP device. SHARP reserves the right to make changes in the specifications, characteristics, data, materials, structure, and other contents described herein at any time without notice in order to improve design or reliability. Manufacturing locations are also subject to change without notice. Observe the following points when using any devices in this publication. SHARP takes no responsibility for damage caused by improper use of the devices which does not meet the conditions and absolute maximum ratings to be used specified in the relevant specification sheet nor meet the following conditions: (i) The devices in this publication are designed for use in general electronic equipment designs such as: --- Personal computers --- Office automation equipment --- Telecommunication equipment [terminal] --- Test and measurement equipment --- Industrial control --- Audio visual equipment --- Consumer electronics (ii) Measures such as fail-safe function and redundant design should be taken to ensure reliability and safety when SHARP devices are used for or in connection with equipment that requires higher reliability such as: --- Transportation control and safety equipment (i.e., aircraft, trains, automobiles, etc.) --- Traffic signals --- Gas leakage sensor breakers --- Alarm equipment --- arious safety devices, etc. (iii) SHARP devices shall not be used for or in connection with equipment that requires an extremely high level of reliability and safety such as: --- Space applications --- Telecommunication equipment [trunk lines] --- Nuclear power control equipment --- Medical and other life support equipment (e.g., scuba). If the SHARP devices listed in this publication fall within the scope of strategic products described in the Foreign Exchange and Foreign Trade Law of Japan, it is necessary to obtain approval to export such SHARP devices. This publication is the proprietary product of SHARP and is copyrighted, with all rights reserved. Under the copyright laws, no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, for any purpose, in whole or in part, without the express written permission of SHARP. Express written permission is also required before any use of this publication may be made by a third party. Contact and consult with a SHARP representative if there are any questions about the contents of this publication. [E28] 4
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