BFG520; BFG520/X; BFG520/XR

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BFG; BFG/X; BFG/XR Rev. 4 3 November 7 Product data sheet Dear customer, IMPORTNT NOTICE s from October st, 6 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact details. In data sheets where the previous Philips references remain, please use the new links as shown below. http://www.philips.semiconductors.com use http://www.nxp.com http://www.semiconductors.philips.com use http://www.nxp.com (Internet) sales.addresses@www.semiconductors.philips.com use salesaddresses@nxp.com (email) The copyright notice at the bottom of each page (or elsewhere in the document, depending on the version) - Koninklijke Philips Electronics N.V. (year). ll rights reserved - is replaced with: - NXP B.V. (year). ll rights reserved. - If you have any questions related to the data sheet, please contact our nearest sales office via e-mail or phone (details via salesaddresses@nxp.com). Thank you for your cooperation and understanding, NXP Semiconductors

BFG; BFG/X; BFG/XR FETURES High power gain Low noise figure High transition frequency Gold metallization ensures excellent reliability. DESCRIPTION NPN silicon planar epitaxial transistors, intended for applications in the RF frontend in the GHz range, such as analog and digital cellular telephones, cordless telephones (CT, CT, DECT, etc.), radar detectors, pagers and satellite TV tuners (STV) and repeater amplifiers in fibre-optic systems. The transistors are encapsulated in 4-pin, dual-emitter plastic SOT43 and SOT43R envelopes. PINNING PIN DESCRIPTION BFG (Fig.) Code: %MF collector base 3 emitter 4 emitter BFG/X (Fig.) Code: %ML collector emitter 3 base 4 emitter BFG/XR (Fig.) Code: %MP collector emitter 3 base 4 emitter page 4 3 Top view MSB4 Fig. SOT43B. handbook, columns 3 4 Top view MSB3 Fig. SOT43R. QUICK REFERENCE DT SYMBOL PRMETER CONDITIONS MIN. TYP. MX. UNIT V CBO collector-base voltage open emitter V V CEO collector-emitter voltage open base V I c DC collector current 7 m P tot total power dissipation up to T s =88 C; note 3 mw h FE DC current gain I C = m; V CE = 6 V; T j = C 6 C re feedback capacitance I C = ; V CB = 6 V; f = MHz.3 pf f T transition frequency I C = m; V CE = 6 V; f = GHz; T amb = C G UM maximum unilateral power gain I C = m; V CE = 6 V; f = 9 MHz; T amb = C I C = m; V CE = 6 V; f = GHz; T amb = C S insertion power gain I C = m; V CE = 6 V; f = 9 MHz; T amb = C F noise figure Γ s = Γ opt ; I c = m; V CE =6V; f = 9 MHz; T amb = C Γ s = Γ opt ; I C = m; V CE =6 V; f = 9 MHz; T amb = C Γ s = Γ opt ; I C = m; V CE = 8 V; f = GHz; T amb = C 9 GHz 9 db 3 db 7 8 db..6 db.6. db.9 db Rev. 4-3 November 7 of 4

BFG; BFG/X; BFG/XR LIMITING VLUES In accordance with the bsolute Maximum System (IEC 34). SYMBOL PRMETER CONDITIONS MIN. MX. UNIT V CBO collector-base voltage open emitter V V CEO collector-emitter voltage open base V V EBO emitter-base voltage open collector. V I C DC collector current 7 m P tot total power dissipation up to T s = 88 C; note 3 mw T stg storage temperature 6 C T j junction temperature 7 C THERML RESISTNCE R th j-s Note SYMBOL PRMETER CONDITIONS THERML RESISTNCE thermal resistance from junction to soldering point. T s is the temperature at the soldering point of the collector tab. up to T s =88 C; note 9 K/W Rev. 4-3 November 7 3 of 4

BFG; BFG/X; BFG/XR CHRCTERISTICS T j = C unless otherwise specified. SYMBOL PRMETER CONDITIONS MIN. TYP. MX. UNIT I CBO collector cut-off current I E = ; V CB = 6 V n h FE DC current gain I C = m; V CE = 6 V 6 C e emitter capacitance I C =i c =;V EB =. V; f = MHz pf C c collector capacitance I E =i e =;V CB = 6 V; f = MHz.6 pf C re feedback capacitance I C =;V CB = 6 V; f = MHz.3 pf f T transition frequency I C = m; V CE = 6 V; f = GHz; T amb = C G UM Notes maximum unilateral power gain (note ). G UM is the maximum unilateral power gain, assuming S is zero and. I C = m; V CE = 6 V; R L =Ω; f = 9 MHz; T amb = C; f p = 9 MHz; f q = 9 MHz; measured at f (p q) = 898 MHz and f (q p) = 94 MHz. 3. d im = 6 db (DIN 44B); V p =V o ;V q =V o 6 db; V r =V o 6 db; f p = 79. MHz; f q = 83. MHz; f r = 8. MHz; measured at f (p+q r) = 793. MHz I C = m; V CE = 6 V; f = 9 MHz; T amb = C I C = m; V CE = 6 V; f = GHz; T amb = C S insertion power gain I C = m; V CE = 6 V; f = 9 MHz; T amb = C F noise figure Γ s = Γ opt ;I C = m; V CE =6V; f = 9 MHz; T amb = C P L output power at db gain compression Γ s = Γ opt ; I C = m; V CE =6 V; f = 9 MHz; T amb = C Γ s = Γ opt ;I C = m; V CE =6 V; f = GHz; T amb = C I C = m; V CE = 6 V; R L =Ω; f = 9 MHz; T amb = C 9 GHz 9 db 3 db 7 8 db..6 db.6. db.9 db 7 dbm ITO third order intercept point note 6 dbm V o output voltage note 3 7 mv d G UM second order intermodulation distortion S = log ------------------------------------------------------------- db. S S I C = m; V CE = 6 V; V o = 7 mv; T amb = C; f (p+q) = 8 MHz db Rev. 4-3 November 7 4 of 4

BFG; BFG/X; BFG/XR 4 P tot (mw) 3 MR67- h FE MR67 T s ( o C) I C (m) V CE = 6 V; T j = C. Fig.3 Power derating curve. Fig.4 DC current gain as a function of collector current..6 MR67 MR673 C re (pf) f T (GHz) V CE = 6 V.4 8 V CE = 3 V. 4 4 8 V CB (V) I C (m) I C = ; f = MHz. f = GHz; T amb = C. Fig. Feedback capacitance as a function of collector-base voltage. Fig.6 Transition frequency as a function of collector current. Rev. 4-3 November 7 of 4

BFG; BFG/X; BFG/XR In Figs 7 to, G UM = maximum unilateral power gain; MSG = maximum stable gain; G max = maximum available gain. gain MSG MR674 G max gain MR67 G UM MSG G max G UM 3 I C (m) 3 I C (m) V CE = 6 V; f = 9 MHz; T amb = C. V CE = 6 V; f = GHz; T amb = C. Fig.7 Gain as a function of collector current. Fig.8 Gain as a function of collector current. gain G UM MR676 gain MR677 4 4 G UM 3 MSG 3 MSG G max G max 3 4 f (MHz) 3 4 f (MHz) I C = m; V CE = 6 V; T amb = C. Fig.9 Gain as a function of frequency. I C = m; V CE = 6 V; T amb = C. Fig. Gain as a function of frequency. Rev. 4-3 November 7 6 of 4

BFG; BFG/X; BFG/XR d im 3 ME97 d 3 ME974 4 4 6 6 7 3 4 I C (m) 7 3 4 I C (m) Fig. Intermodulation distortion as a function of collector current. Fig. Second order intermodulation distortion as a function of collector current. F min 4 G ass MR68 f = 9 MHz MHz G ass F min 4 I C = m m G ass MR683 G ass 3 MHz 3 MHz MHz F min 9 MHz MHz I C (m) m F min m 3 f (MHz) 4 V CE = 6 V; T amb = C. Fig.3 Minimum noise figure and associated available gain as functions of collector current. V CE = 6 V; T amb = C. Fig.4 Minimum noise figure and associated available gain as functions of frequency. Rev. 4-3 November 7 7 of 4

BFG; BFG/X; BFG/XR handbook, full pagewidth stability circle 9. pot. unst. region 3. 4.8.6. F min =. db.4 Γ OPT. 8.. F =. db F = db. F = 3 db 3. 4 I C = m; V CE = 6 V; f = 9 MHz; Z o =Ω. 9 Fig. Noise circle figure. MR684. handbook, full pagewidth 9. 3. 4.8. F = db Γ OPT F = 3 db F =. db.6.4 G max = 3 db F min =. 9 db. 8 Γ MS.. G = db. G = db G = db 3. 4 9 MR68. I C = m; V CE = 6 V; f = GHz; Z o =Ω. Fig.6 Noise circle figure. Rev. 4-3 November 7 8 of 4

BFG; BFG/X; BFG/XR handbook, full pagewidth 9. 3. 4.8.6. 3 GHz.4. 8.. 4 MHz. I C = m; V CE = 6 V. Z o =Ω.. 3 4 MR678 9 Fig.7 Common emitter input reflection coefficient (S ).. handbook, full pagewidth 9 3 4 4 MHz 8 4 3 3 GHz 3 4 9 MR679 I C = m; V CE = 6 V. Fig.8 Common emitter forward transmission coefficient (S ). Rev. 4-3 November 7 9 of 4

BFG; BFG/X; BFG/XR handbook, full pagewidth 9 3 4 3 GHz 8..... 4 MHz 3 4 I C = m; V CE = 6 V. 9 MR68 Fig.9 Common emitter reverse transmission coefficient (S ). handbook, full pagewidth 9. 3. 4.8.6..4. 8.. 4 MHz. 3 GHz I C = m; V CE = 6 V. Z o =Ω.. 3 4 MR68 9 Fig. Common emitter output reflection coefficient (S ).. Rev. 4-3 November 7 of 4

BFG; BFG/X; BFG/XR PCKGE OUTLINES Plastic surface mounted package; 4 leads SOT43B D B E X y v M H E e b p w M B 4 3 Q c b Lp e detail X mm scale DIMENSIONS (mm are the original dimensions) UNIT mm..9 max. b p.48.38 b.88.78 c..9 D 3..8 E.4. e.9 e.7 H E.. L p.4. Q..4 v. w y.. OUTLINE VERSION REFERENCES IEC JEDEC EIJ EUROPEN PROJECTION ISSUE DTE SOT43B 97--8 Rev. 4-3 November 7 of 4

BFG; BFG/X; BFG/XR Plastic surface mounted package; reverse pinning; 4 leads SOT43R D B E X y v M H E e b p w M B 3 4 Q c b Lp e detail X mm scale DIMENSIONS (mm are the original dimensions) UNIT mm..9 max. b p.48.38 b.88.78 c..9 D 3..8 E.4. e.9 e.7 H E.. L p.. Q.4. v. w y.. OUTLINE VERSION REFERENCES IEC JEDEC EIJ EUROPEN PROJECTION ISSUE DTE SOT43R 97-3- Rev. 4-3 November 7 of 4

BFG; BFG/X; BFG/XR Legal information Data sheet status Document status [][] Product status [3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [] Please consult the most recently issued document before initiating or completing a design. [] The term short data sheet is explained in section Definitions. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. Definitions Draft The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet short data sheet is an extract from a full data sheet with the same product type number(s) and title. short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. Disclaimers General Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer s own risk. pplications pplications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values Stress above one or more limiting values (as defined in the bsolute Maximum Ratings System of IEC 634) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Trademarks Notice: ll referenced brands, product names, service names and trademarks are the property of their respective owners. Contact information For additional information, please visit: http://www.nxp.com For sales office addresses, send an email to: salesaddresses@nxp.com Rev. 4-3 November 7 3 of 4

BFG; BFG/X; BFG/XR Revision history Revision history Document ID Release date Data sheet status Change notice Supersedes BFGXR_N_4 73 Product data sheet - BFGXR_CNV_3 Modifications: Pinning table on page ; changed code BFGXR_CNV_3 999 - BFGXR_ BFGXR_ - - BFGXR_ BFGXR_ - - - - Please be aware that important notices concerning this document and the product(s) described herein, have been included in section Legal information. NXP B.V. 7. ll rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 3 November 7 Document identifier: BFGXR_N_4

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