YDS Presentation KRL series for Inverter Air-con 2014 横浜電子精工株式会社
CORPORATE PROFILE Company Name Co.,Ltd Date of Establishment Nov. 1940 YDS ( 横浜電子精工株式会社 ) Business Focus Thin Film Resistor Head Office Yokohama, Japan Main Plant Niigata, Japan Sales Office in China ShangHai Quality & Environment ISO9001 & ISO14001 certified
BUSINESS FOCUS High Precision High Frequency High Power
Line-up Application Main Series Main Product Main Application(example) RR, RN73 High precision thin film resistor Automobile, Base station, Instrumentation RN, RA High precision network chip resistor Automobile, Base station, Instrumentation RL, PRL, KRL Low resistance high power shunt chip resistor Automobile, Power supply, Motor control, Consumer ele. PAT, PBV, PXV Chip attenuator, Thermo variable attenuator Base station, Satellite, Radar
KRL Line-up Short side electrode Long side electrode Part Number Inch Size Power Rating Part Number Inch Size Power Rating KRL0816 0603 0.3W KRL2012 0805 1.0W KRL1220 0805 0.5W KRL3216 1206 1.5W KRL1632 1206 0.75W KRL5025 2010 2.0W KRL2550 2010 1.5W KRL6432 2512 3.0W KRL3264 2512 2.0W KRL7638 3015 4.0W KRL50110 4320 5.0W KRL9045 3518 5.0W KRL11050 4320 6.0W
KRL Summary up-down reversed structure, to reduce the impact from TCR (±50ppm). reasonable & effective heat-radiation design, well-distributed without partial hotspot, low V/I change coefficient. buffer layer design to absorb the shear stress, high endurance to thermal shock & high temperature. low parasitic inductance(<1nh), resistance well-balanced (±1%). reduce measure tolerance in high-speed circuit & ringing noise impact.
KRL Structure (A) Ceramic board: carrier; insulation; heat-radiation (B) Resistance: conductor (C) Resin: adhesive; buffer layer (D) Electrode: solder terminal (E) Protect film: insulation
Actual Example for YDS Current Sensor Example for KRL/ERL series only Series Application Example Customer Example (in alphabetical sequence ) KRL/ERL Current Sensor Automobile(ECU, BCU), Industry(Inverter, Servo), Inverter Consumer Electronics (air-con, washing machine), Power Supply(ACDC, DCDC), PC, HDD, Li-ion Battery, Smart Phone etc. Agilent Technologies, Apple Inc., Daikin Industries, Dell, Delphi, Fujitsu, Fuji Electric, HGST, Honda Elesys, HP, IBM, JTEKT, KEYENCE, Lenovo, LG Chem., Mitsubishi Electric, NEC, Panasonic, Power-one, Rohde & Schwarz, Sanyo, Simens, Sony, Toshiba, TDK, Yaskawa Electric, etc.
Actual Example Used in Air-Con P/N Customer Models KRL7638(4W) Daikin Industries package models KRL9045(5W) Fujitsu General nocria <Daikin PCB Photo>
KRL vs Cement Resistor TCR & TEMF Comparison in Overall TCR (including cond. Resistance and contact resistance) 25 125 TCR KRL7638-M-R010 4W 10mΩ 9.982mΩ 9.991mΩ 9.0ppm/ BPR58 5W 10mΩ 9.461mΩ 9.942mΩ 508.4ppm/ Comparison in TEMF(Thermal Electromotive Force) 0.20 BPR58-10mΩ(KOA) 0.15 KRL7638-C-R030 KRL7638-M-R010 0.10 0.05 熱起電力 (mv) 0.00 0 10 20 30 40 50 60-0.05 時間 (sec)
KRL vs Cement Resistor ESL Comparison in ESL 45 40 35 BPR58-10mΩ(KOA) KRL7638-M-R010 30 25 20 ESL(nH) 15 10 5 0 10 100 1000 f(mhz)
KRL vs Cement Resistor Voltage Waveform Comparison in detected voltage waveform <BPR58> <KRL7638>
KRL50110 vs Vishay WSR5 short time overload YDS KRL50110 Vishay WSR5 Power ΔR Power ΔR 0 0.00% 0 0.00% 5-0.01% 5 0.00% 10-0.09% 10 0.10% 15-0.24% 15 0.20% 20 0.14% 20-1.76% 25 1.61% 25-4.56% Short time overload 5.00% 4.00% 3.00% 2.00% 1.00% 0.00% -1.00% -2.00% Resistance drift(%) -3.00% YDS KRL50110 Vishay WSR5-4.00% -5.00% 0 5 10 15 20 25 Power loaded(w)
KRL50110 vs Vishay WSR5 surface temp. rise <Temp. when 5W inputted> YDS surf. temp.: 203.30 Test Condition: DUT was mounted on FR4 PCB and a given power was loaded, and then after seeing thermally equilibrium, surface temp were measured under thermograph.(with heat radiation) Surface Temp. Rise 350 300 250 200 150 100 50 1 YDS KRL50110 surf. temp. 2 Vishay WSR5 surf. temp. 3 YDS KRL50110 pin temp. 4 Vishay WSR5 pin temp. 2 1 3 4 Vishay surf. temp.: 269.74 0 0 1 2 3 4 5 6 300.0 265.6 231.3 196.9 162.5 128.1 93.8 59.4 25.0 300.0 265.6 231.3 196.9 162.5 128.1 93.8 59.4 25.0 Surf. Temp. ( ) Input Power (W)
KRL50110 vs Vishay WSR5 I/V characteristic I-V conversion Curve 350 300 YDS KRL50110 Vishay WSR5 250 200 150 100 Vout(mV) 50 0 0 2 4 6 8 10 12 14 16 Iin(A) Resistance drift over current 2.00% 1.50% 1.00% 0.50% 0.00% -0.50% -1.00% -1.50% -2.00% YDS KRL50110 Vishay WSR5 0 2 4 6 8 10 12 14 16 Resistance Change(%) Current(A)
KRL50110 vs Vishay WSR5 single pulse One Pulse Test 10000W 1000W 100W YDS VISHY 10W Input Power (W) 1W 0.1 1.0 10.0 100.0 1,000.0 Input Time(mSec)
KRL50110 vs Vishay WSR5 - TEMP 3000 2500 2000 Vishay WSR5 YDS KRL50110-M-R020-F 1500 TEMP(µV) 1000 500 0-500 0 50 100 150 200 250 Transient Time(Sec)
KRL50110 vs Vishay WSR5 - ESL ESL data (KRL50110-C vs WSR5) 12.000 10.000 8.000 6.000 4.000 ESL(nH) 2.000 0.000 1 10 20 30 50 100 Frequency(MHz) YDS(nH) VISHY(nH)
KRL vs Vishay crack of thermal cycle KRL/WSL Thermal Cycle KRL WSL Cross-Section Observation(2000 cycle) Point 1.000% 0.950% 0.900% 0.850% 0.800% 0.750% 0.700% 0.650% 0.600% 0.550% 0.500% 0.450% 0.400% 0.350% 0.300% 0.250% 0.200% 0.150% 0.100% 0.050% 0.000% -0.050% -0.100% -0.150% -0.200% 0 500 1000 1500 2000 2500 3000 KRL No Crack caused WSL Cycle Crack caused on bottom plane R
KRL Summary 在结构和制程上最大限度实现大功率低阻采样电阻所必须的功能 可靠性 温度系数 采用倒装片封装结构, 极力降低温度系数对电阻的影响, 以满足低温漂的指标要求 散热性 VI 转换系数 合理的散热设计使得热能均匀扩散 无局部热点,VI 转变系数低, 随着负荷的增减, 阻值变化稳定 抗冷热冲击能力 高温稳定性 缓冲层的设计使得切应力大部分被吸收, 大大提高了抗冷热冲击和耐高温的能力 ESL 寄生电感低, 阻值均匀, 降低了在低阻范围以及高频和高速回路的测量误差, 减轻振铃噪声的影响
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