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Transcription:

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below. Instead of http://www.nxp.com, http://www.philips.com/ or http://www.semiconductors.philips.com/, use http://www.nexperia.com Instead of sales.addresses@www.nxp.com or sales.addresses@www.semiconductors.philips.com, use salesaddresses@nexperia.com (email) Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on the version, as shown below: - NXP N.V. (year). All rights reserved or Koninklijke Philips Electronics N.V. (year). All rights reserved Should be replaced with: - Nexperia B.V. (year). All rights reserved. If you have any questions related to the data sheet, please contact our nearest sales office via e-mail or telephone (details via salesaddresses@nexperia.com). Thank you for your cooperation and understanding, Kind regards, Team Nexperia

NPN/PNP resistor-equipped transistors; R1 = 47 k, R2 = 47 k Rev. 4 21 November 2011 Product data sheet 1. Product profile 1.1 General description NPN/PNP double Resistor-Equipped Transistors (RET) in Surface-Mounted Device (SMD) plastic packages. Table 1. Product overview Type number Package PNP/PNP NXP JEITA complement NPN/NPN complement Package configuration PEMD12 SOT666 - PEMB2 PEMH2 ultra small and flat lead PUMD12 SOT363 SC-88 PUMB2 PUMH2 very small 1.2 Features and benefits 0 ma output current capability Reduces component count Built-in bias resistors Reduces pick and place costs Simplifies circuit design AEC-Q1 qualified 1.3 Applications Low current peripheral driver Control of IC inputs Replaces general-purpose transistors in digital applications 1.4 Quick reference data Table 2. Quick reference data Symbol Parameter Conditions Min Typ Max Unit Per transistor; for the PNP transistor (TR2) with negative polarity V CEO collector-emitter voltage open base - - 50 V I O output current - - 0 ma R1 bias resistor 1 (input) 33 47 61 k R2/R1 bias resistor ratio 0.8 1 1.2

2. Pinning information Table 3. Pinning Pin Description Simplified outline Graphic symbol 1 GND (emitter) TR1 2 input (base) TR1 3 output (collector) TR2 4 GND (emitter) TR2 5 input (base) TR2 6 5 4 1 2 3 6 output (collector) TR1 001aab555 6 5 4 TR1 R1 R2 R2 R1 TR2 1 2 3 006aaa143 3. Ordering information 4. Marking Table 4. Ordering information Type number Package Name Description Version PEMD12 - plastic surface-mounted package; 6 leads SOT666 PUMD12 SC-88 plastic surface-mounted package; 6 leads SOT363 Table 5. Marking codes Type number Marking code [1] PEMD12 D2 PUMD12 D*1 [1] * = placeholder for manufacturing site code Product data sheet Rev. 4 21 November 2011 2 of 16

5. Limiting values Table 6. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit Per transistor; for the PNP transistor (TR2) with negative polarity V CBO collector-base voltage open emitter - 50 V V CEO collector-emitter voltage open base - 50 V V EBO emitter-base voltage open collector - V V I input voltage TR1 positive - +40 V negative - V input voltage TR2 positive - + V negative - 40 V I O output current - 0 ma I CM peak collector current single pulse; - 0 ma t p 1ms P tot total power dissipation T amb 25 C PEMD12 (SOT666) [1][2] - 200 mw PUMD12 (SOT363) [1] - 200 mw Per device P tot total power dissipation T amb 25 C PEMD12 (SOT666) [1][2] - 300 mw PUMD12 (SOT363) [1] - 300 mw T j junction temperature - 150 C T amb ambient temperature 65 +150 C T stg storage temperature 65 +150 C [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. [2] Reflow soldering is the only recommended soldering method. Product data sheet Rev. 4 21 November 2011 3 of 16

400 006aac749 P tot (mw) 300 200 0 0-75 -25 25 75 125 175 T amb ( C) Fig 1. FR4 PCB, standard footprint Per device: Power derating curve for SOT363 (SC-88) and SOT666 6. Thermal characteristics Table 7. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Per transistor R th(j-a) thermal resistance from junction to ambient in free air PEMD12 (SOT666) [1][2] - - 625 K/W PUMD12 (SOT363) [1] - - 625 K/W Per device R th(j-a) thermal resistance from junction to ambient in free air PEMD12 (SOT666) [1][2] - - 417 K/W PUMD12 (SOT363) [1] - - 417 K/W [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Reflow soldering is the only recommended soldering method. Product data sheet Rev. 4 21 November 2011 4 of 16

3 Z th(j-a) (K/W) 2 duty cycle = 1 0.75 0.5 0.33 0.2 006aac751 0.1 0.05 0.02 0.01 0-1 1-5 -4-3 -2 1 2 3 t p (s) Fig 2. FR4 PCB, standard footprint Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration for PEMD12 (SOT666); typical values 3 duty cycle = 1 006aac750 Z th(j-a) (K/W) 2 0.75 0.33 0.1 0.5 0.2 0.05 0.02 0.01 0-1 1-5 -4-3 -2 1 2 3 t p (s) Fig 3. FR4 PCB, standard footprint Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration for PUMD12 (SOT363); typical values Product data sheet Rev. 4 21 November 2011 5 of 16

7. Characteristics Table 8. Characteristics T amb =25 C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit Per transistor; for the PNP transistor (TR2) with negative polarity I CBO collector-base cut-off V CB =50V; I E = 0 A - - 0 na current I CEO collector-emitter cut-off V CE =30V; I B = 0 A - - 1 A current V CE =30V; I B =0A; - - 5 A T j = 150 C I EBO emitter-base cut-off V EB =5V; I C = 0 A - - 90 A current h FE DC current gain V CE =5V; I C =5mA 80 - - V CEsat collector-emitter I C =ma; - - 150 mv saturation voltage I B =0.5mA V I(off) off-state input voltage V CE =5V; I C = 0 A - 1.2 0.8 V V I(on) on-state input voltage V CE =0.3V; I C =2mA 3 1.6 - V R1 bias resistor 1 (input) 33 47 61 k R2/R1 bias resistor ratio 0.8 1 1.2 C c collector capacitance V CB =V; I E =i e =0A; f=1mhz TR1 (NPN) - - 2.5 pf TR2 (PNP) - - 3 pf f T transition frequency V CE =5V; I C =ma; f=0mhz [1] TR1 (NPN) - 230 - MHz TR2 (PNP) - 180 - MHz [1] Characteristics of built-in transistor Product data sheet Rev. 4 21 November 2011 6 of 16

3 006aac752 1 006aac753 h FE 2 (1) (2) (3) V CEsat (V) (1) (2) -1 (3) Fig 4. 1-1 1 2 V CE =5V (1) T amb = 0 C (2) T amb =25 C (3) T amb = 40 C TR1 (NPN): DC current gain as a function of collector current; typical values Fig 5. -2-1 1 2 I C /I B =20 (1) T amb = 0 C (2) T amb =25 C (3) T amb = 40 C TR1 (NPN): Collector-emitter saturation voltage as a function of collector current; typical values 006aac754 006aac755 V I(on) (V) V I(off) (V) (1) (1) 1 (2) (3) 1 (2) (3) Fig 6. -1-1 1 2 V CE =0.3V (1) T amb = 40 C (2) T amb =25 C (3) T amb = 0 C TR1 (NPN): On-state input voltage as a function of collector current; typical values Fig 7. -1-1 1 V CE =5V (1) T amb = 40 C (2) T amb =25 C (3) T amb = 0 C TR1 (NPN): Off-state input voltage as a function of collector current; typical values Product data sheet Rev. 4 21 November 2011 7 of 16

2.0 006aac756 3 006aac757 C c (pf) 1.6 f T (MHz) 1.2 2 0.8 0.4 0.0 0 20 30 40 50 V CB (V) -1 1 2 f=1mhz; T amb =25 C V CE =5V; T amb =25 C Fig 8. TR1 (NPN): Collector capacitance as a function of collector-base voltage; typical values Fig 9. TR1 (NPN): Transition frequency as a function of collector current; typical values of built-in transistor 3 006aac758-1 006aac759 h FE 2 (1) (2) (3) V CEsat (V) - -1 (1) (2) (3) Fig. 1 - -1-1 - - 2 V CE = 5 V (1) T amb = 0 C (2) T amb =25 C (3) T amb = 40 C TR2 (PNP): DC current gain as a function of collector current; typical values Fig 11. - -2 - -1-1 - - 2 I C /I B =20 (1) T amb = 0 C (2) T amb =25 C (3) T amb = 40 C TR2 (PNP): Collector-emitter saturation voltage as a function of collector current; typical values Product data sheet Rev. 4 21 November 2011 8 of 16

- 006aac760-006aac761 V I(on) (V) (1) (2) V I(off) (V) (1) (3) (2) -1-1 (3) Fig 12. - -1 - -1-1 - - 2 V CE = 0.3 V (1) T amb = 40 C (2) T amb =25 C (3) T amb = 0 C TR2 (PNP): On-state input voltage as a function of collector current; typical values Fig 13. - -1 - -1-1 - V CE = 5 V (1) T amb = 40 C (2) T amb =25 C (3) T amb = 0 C TR2 (PNP): Off-state input voltage as a function of collector current; typical values 9 006aac762 3 006aac763 C c (pf) 6 f T (MHz) 2 3 0 0 - -20-30 -40-50 V CB (V) - -1-1 - - 2 f=1mhz; T amb =25 C V CE = 5 V; T amb =25 C Fig 14. TR2 (PNP): Collector capacitance as a function of collector-base voltage; typical values of built-in transistor Fig 15. TR2 (PNP): Transition frequency as a function of collector current; typical values of built-in transistor Product data sheet Rev. 4 21 November 2011 9 of 16

8. Test information 9. Package outline 8.1 Quality information This product has been qualified in accordance with the Automotive Electronics Council (AEC) standard Q1 - Stress test qualification for discrete semiconductors, and is suitable for use in automotive applications. 1.7 1.5 0.6 0.5 2.2 1.8 1.1 0.8 6 5 4 6 5 4 0.45 0.15 1.7 1.5 1.3 1.1 pin 1 index 0.3 0.1 2.2 2.0 1.35 1.15 pin 1 index 1 2 3 0.27 0.5 0.17 1 0.18 0.08 Dimensions in mm 04-11-08 Dimensions in mm 1 2 3 0.3 0.65 0.2 1.3 0.25 0. 06-03-16 Fig 16. Package outline PEMD12 (SOT666) Fig 17. Package outline PUMD12 (SOT363). Packing information Table 9. Packing methods The indicated -xxx are the last three digits of the 12NC ordering code. [1] Type Package Description Packing quantity number 3000 4000 8000 000 PEMD12 SOT666 2 mm pitch, 8 mm tape and reel - - -315-4 mm pitch, 8 mm tape and reel - -115 - - PUMD12 SOT363 4 mm pitch, 8 mm tape and reel; T1 [2] -115 - - -135 4 mm pitch, 8 mm tape and reel; T2 [3] -125 - - -165 [1] For further information and the availability of packing methods, see Section 14. [2] T1: normal taping [3] T2: reverse taping Product data sheet Rev. 4 21 November 2011 of 16

11. Soldering 2.75 2.45 2.1 1.6 2 1.7 0.538 1.075 0.55 (2 ) 0.4 (6 ) 0.25 (2 ) 0.3 (2 ) solder lands placement area solder paste occupied area 1.7 0.325 (4 ) 0.375 (4 ) Dimensions in mm 0.45 (4 ) 0.6 (2 ) 0.5 (4 ) 0.65 (2 ) sot666_fr Fig 18. Reflow soldering is the only recommended soldering method. Reflow soldering footprint PEMD12 (SOT666) Product data sheet Rev. 4 21 November 2011 11 of 16

2.65 solder lands 2.35 1.5 0.6 0.5 0.4 (2 ) (4 ) (4 ) solder resist solder paste 0.5 (4 ) 0.6 (2 ) occupied area 0.6 (4 ) Dimensions in mm 1.8 sot363_fr Fig 19. Reflow soldering footprint PUMD12 (SOT363) 1.5 solder lands 4.5 0.3 2.5 solder resist 1.5 occupied area Dimensions in mm 1.3 1.3 preferred transport direction during soldering 2.45 5.3 sot363_fw Fig 20. Wave soldering footprint PUMD12 (SOT363) Product data sheet Rev. 4 21 November 2011 12 of 16

12. Revision history Table. Revision history Document ID Release date Data sheet status Change notice Supersedes PEMD12_PUMD12 v.4 20111121 Product data sheet - PEMD12_PUMD12 v.3 Modifications: The format of this document has been redesigned to comply with the new identity guidelines of NXP Semiconductors. Legal texts have been adapted to the new company name where appropriate. Section 1 Product profile : updated Section 4 Marking : updated Figure 1 to 15: added Section 6 Thermal characteristics : updated Table 8 Characteristics : V i(on) redefined to V I(on) on-state input voltage, V i(off) redefined to V I(off) off-state input voltage, I CEO updated, f T added Section 8 Test information : added Section 9 Package outline : superseded by minimized package outline drawings Section Packing information : added Section 11 Soldering : added Section 13 Legal information : updated PEMD12_PUMD12 v.3 200308 Product data sheet - PEMD12 v.2 PEMD12 v.2 200117 Product specification - PEMD12 v.1 PEMD12 v.1 200830 Preliminary specification - - PUMD12 v.2 200216 Product specification - PUMD12 v.1 PUMD12 v.1 19990426 Product specification - - Product data sheet Rev. 4 21 November 2011 13 of 16

13. Legal information 13.1 Data sheet status Document status [1][2] Product status [3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term short data sheet is explained in section Definitions. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 13.2 Definitions Draft The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. Product specification The information and data provided in a Product data sheet shall define the specification of the product as agreed between NXP Semiconductors and its customer, unless NXP Semiconductors and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the NXP Semiconductors product is deemed to offer functions and qualities beyond those described in the Product data sheet. 13.3 Disclaimers Limited warranty and liability Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors. Right to make changes NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer s own risk. Applications Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using NXP Semiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer s sole responsibility to determine whether the NXP Semiconductors product is suitable and fit for the customer s applications and products planned, as well as for the planned application and use of customer s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer s applications or products, or the application or use by customer s third party customer(s). Customer is responsible for doing all necessary testing for the customer s applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer s third party customer(s). NXP does not accept any liability in this respect. Limiting values Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. No offer to sell or license Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities. Product data sheet Rev. 4 21 November 2011 14 of 16

Quick reference data The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. 13.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 14. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Product data sheet Rev. 4 21 November 2011 15 of 16

15. Contents 1 Product profile.......................... 1 1.1 General description..................... 1 1.2 Features and benefits.................... 1 1.3 Applications........................... 1 1.4 Quick reference data.................... 1 2 Pinning information...................... 2 3 Ordering information..................... 2 4 Marking................................ 2 5 Limiting values.......................... 3 6 Thermal characteristics.................. 4 7 Characteristics.......................... 6 8 Test information........................ 8.1 Quality information..................... 9 Package outline........................ Packing information.................... 11 Soldering............................. 11 12 Revision history........................ 13 13 Legal information....................... 14 13.1 Data sheet status...................... 14 13.2 Definitions............................ 14 13.3 Disclaimers........................... 14 13.4 Trademarks........................... 15 14 Contact information..................... 15 15 Contents.............................. 16 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section Legal information. NXP B.V. 2011. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 21 November 2011 Document identifier: PEMD12_PUMD12

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