FGPF V PDP Trench IGBT

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FGPF4536 36 V PDP Trench IGBT Features High Current Capability Low Saturation Voltage: V CE (sat) =.59 V @ I C = 5 A High Input Impedance Fast Switching RoHS Compliant Applications PDP TV, Consumer appliances, Lighting General Description November 23 Using novel trench IGBT technology, Fairchild s new series of trench IGBTs offer the optimum performance for consumer appliances, PDP TV and lighting applications where low conduction and switching losses are essential. G C E TO-22F (Retractable) Absolute Maximum Ratings Symbol Description Ratings Unit V CES Collector to Emitter Voltage 36 V V GES Gate to Emitter Voltage 3 V I C pulse()* Pulsed Collector Current @ 22 A P D Maximum Power Dissipation @ 28.4 W Maximum Power Dissipation @ T C = o C.4 W T J Operating Junction Temperature -55 to +5 o C T stg Storage Temperature Range -55 to +5 o C T L Maximum Lead Temp. for soldering Purposes, /8 from case for 5 seconds 3 o C Thermal Characteristics Symbol Parameter Typ. Max. Unit R JC (IGBT) Thermal Resistance, Junction to Case - 4.4 o C/W R JA Thermal Resistance, Junction to Ambient - 62.5 o C/W Notes: () Half Sine Wave, D <., pluse width < sec * Ic_pluse limited by max Tj 2 Fairchild Semiconductor Corporation www.fairchildsemi.com

Package Marking and Ordering Information Part Number Top Mark Package Packing Method Electrical Characteristics of the IGBT T C = 25 C unless otherwise noted Reel Size Tape Width Quantity FGPF4536 FGPF4536 TO-22F Tube N/A N/A 5 Symbol Parameter Test Conditions Min. Typ. Max. Unit Off Characteristics BV CES Collector to Emitter Breakdown Voltage V GE = V, I C = 25 A 36 - - V BV CES / T J Temperature Coefficient of Breakdown Voltage V GE = V, I C = 25 A -.4 - V/ o C I CES Collector Cut-Off Current V CE = V CES, V GE = V - - A I GES G-E Leakage Current V GE = V GES, V CE = V - - ±4 na On Characteristics V GE(th) G-E Threshold Voltage I C = 25 A, V CE = V GE 2.4 3.3 4. V I C = 2 A, V GE = 5 V -.9 - V V CE(sat) Collector to Emitter Saturation Voltage I C = 3 A, V GE = 5 V -.33 - V I C = 5 A, V GE = 5 V, I C = 5 A, V GE = 5 V, -.59.8 V -.66 - V Dynamic Characteristics C ies Input Capacitance - 295 - pf C oes Output Capacitance V CE = 3 V, V GE = V, f = MHz - 56 - pf C res Reverse Transfer Capacitance - 43 - pf Switching Characteristics t d(on) Turn-On Delay Time - 5 - ns t r Rise Time V CC = 2 V, I C = 2 A, R G = 5, V GE = 5 V, - 2 - ns t d(off) Turn-Off Delay Time Resistive Load, - 4 - ns t f Fall Time - 82 - ns t d(on) Turn-On Delay Time - 4.6 - ns t r Rise Time V CC = 2 V, I C = 2 A, R G = 5, V GE = 5 V, - 2 - ns t d(off) Turn-Off Delay Time Resistive Load, - 43 - ns t f Fall Time - 249 - ns Q g Total Gate Charge - 47 - nc V CE = 2 V, I C = 2 A, Q ge Gate to Emitter Charge V GE = 5 V - 5.4 - nc Q gc Gate to Collector Charge - 5 - nc 2 Fairchild Semiconductor Corporation 2 www.fairchildsemi.com

Typical Performance Characteristics Figure. Typical Output Characteristics Collector Current, IC [A] 2 5 5 2V 5V 2 3 4 5 6 Figure 3. Typical Saturation Voltage Characteristics 2V V V GE = 8V Figure 2. Typical Output Characteristics Collector Current, IC [A] 2 2V T C = 25 o 5V C 2V 5 V V GE = 8V 5 2 3 4 5 6 Figure 4. Transfer Characteristics Collector Current, IC [A] 2 V GE = 5V 5 5 Collector Current, I C [A] 2 V CE = V 5 5 2 3 4 5 6 2 4 6 8 2 Gate-Emitter Voltage,V GE [V] Figure 5. Saturation Voltage vs. V GE Collector-Emitter Voltage, VCE [V] 2 6 2 8 4 I C = 2A 5A 3A 4 8 2 6 2 Gate-Emitter Voltage, V GE [V] Figure 6. Saturation Voltage vs. V GE Collector-Emitter Voltage, VCE [V] 2 6 2 8 4 I C = 2A 5A 3A 4 8 2 6 2 Gate-Emitter Voltage, V GE [V] 2 Fairchild Semiconductor Corporation 3 www.fairchildsemi.com

Typical Performance Characteristics Figure 7. Saturation Voltage vs. Case Temperature at Variant Current Level Collector-Emitter Voltage, VCE [V].7.6.5.4.3.2 5A 3A I C = 2A. V GE = 5V. 2 4 6 8 2 4 Case Temperature, T C [ o C] Figure 8. Capacitance Characteristics Capacitance [pf] 24 2 6 2 8 4 V GE = V, f = MHz C ies C oes C res. 3 Figure 9. Gate charge Characteristics 5 Figure. SOA Characteristics 5 Gate-Emitter Voltage, VGE [V] 2 9 6 3 V CC = V 2V 2 3 4 5 Gate Charge, Q g [nc] Collector Current, Ic [A]. Single Nonrepetitive Pulse Curves must be derated linearly with increase in temperature s ms ms DC s.. Figure. Turn-on Characteristics vs. Gate Resistance Figure 2. Turn-off Characteristics vs. Gate Resistance t f Switching Time [ns] t r t d(on) V CC = 2V, V GE = 5V I C = 2A 2 3 4 5 Gate Resistance, R G [ ] Switching Time [ns] t d(off) V CC = 2V, V GE = 5V I C = 2A 2 3 4 5 Gate Resistance, R G [ ] 2 Fairchild Semiconductor Corporation 4 www.fairchildsemi.com

Typical Performance Characteristics Figure 3. Turn-on Characteristics vs. Collector Current Switching Time [ns] t r t d(on) V GE = 5V, R G = 5 2 3 4 5 Collector Current, I C [A] Figure 4. Turn-off Characteristics vs. Collector Current Switching Time [ns] 4 V GE = 5V, R G = 5 2 3 4 5 Collector Current, I C [A] t f t d(off) Figure 5. Switching Loss vs. Gate Resistance Switching Loss [uj] 5 V CC = 2V, V GE = 5V I C = 2A T C = 25 o C E off E on 2 3 4 5 Gate Resistance, R G [ ] Figure 6. Switching Loss vs. Collector Current Switching Loss [uj] E off E on V GE = 5V, R G = 5 T C = 25 o C 2 3 4 5 Collector Current, I C [A] Figure 7. Turn off Switching SOA Characteristics 5 Collector Current, IC [A] Safe Operating Area V GE = 5V,. 5 2 Fairchild Semiconductor Corporation 5 www.fairchildsemi.com

Typical Performance Characteristics Thermal Response [Zthjc] 8. Figure 8.Transient Thermal Impedance of IGBT.5.2..5.2. single pulse. -5-4 -3-2 - 2 P DM Rectangular Pulse Duration [sec] t t 2 Duty Factor, D = t/t2 Peak T j = Pdm x Zthjc + T C 2 Fairchild Semiconductor Corporation 6 www.fairchildsemi.com

Package Dimensions Figure 9. TO-22F 3L - TO22, MOLDED, 3LD, FULL PACK, EIAJ SC9, STRAIGHT LEAD Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor s online packaging area for the most recent package drawings: http://www.fairchildsemi.com/package/packagedetails.html?id=pn_tf22s-3 Dimensions in Millimeters 2 Fairchild Semiconductor Corporation 7 www.fairchildsemi.com

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