PC851X Series. DIP 4pin High Collector-emitter Voltage Photocoupler. PC851X Series

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Transcription:

PC85X Series DIP 4pin High Collector-emitter Voltage Photocoupler Description PC85X Series contains an IRED optically coupled to a phototransistor. It is packaged in a 4-pin DIP, available in SMT gullwing lead-form option. Input-output isolation voltage(rms) is 5.kV. Collector-emitter voltage is 35V. Features. 4pin DIP package. Double transfer mold package (Ideal for Flow Soldering) 3. High collector-emitter voltage (V CEO : 35V) 4. High isolation voltage between input and output (V iso(rms) : 5. kv) Agency approvals/compliance. Recognized by UL577, file No. E6438 (as model No. PC85). Package resin : UL flammability grade (94V-) Applications. Telephone line interface/isolation. Interface to power supply circuit 3. Controller for SSRs, DC moters Notice The content of data sheet is subject to change without prior notice. In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that may occur in equipment using any SHARP devices shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest device specification sheets before using any SHARP device. Date Mar. 6. 4 SHARP Corporation

Internal Connection Diagram 4 3 3 4 Anode Cathode Emitter Collector Outline Dimensions (Unit : mm). Through-Hole [ex. PC85X]. SMT Gullwing Lead-Form [ex. PC85XI] Anode mark. ±.3.6 ±. PC85 Factory identification mark Date code 4 3 4.58 ±.5. ±.3 Anode mark Factory identification mark.6 ±. PC85 Date code 4 3 4.58 ±.3 6.5 ±.5.54 ±.5 7.6 ±.3 4.58 ±.5 6.5 ±.5 7.6 ±.3.54 ±.5 4.58 ±.5 θ Epoxy resin θ : to 3 θ.7 ±.5 3. ±.5 3.5 ±.5.5 TYP..5 ±..6 ±.. +.4.35 ±.5 Epoxy resin. +.5. +.4 3.5 ±.5.54 ±.5 Product mass : approx..g

Date code ( digit) st digit Year of production nd digit Month of production A.D. 99 99 99 993 994 995 996 997 998 999 Mark A B C D E F H J K L M N A.D 3 4 5 6 7 8 9 Mark P R S T U V W X A B C Month January February March April May June July August September October November December Mark 3 4 5 6 7 8 9 O N D repeats in a year cycle Factory identification mark Factory identification Mark no mark Country of origin Japan Indonesia Philippines China * This factory making is for identification purpose only. Please contact the local SHARP sales representative to see the actual status of the production. 3

Model Line-up Lead Form Through Hole SMT Gullwing Sleeve Taping Package pcs/sleeve pcs/reel Model No. PC85X PC85XI PC85XP Please contact a local SHARP sales representative to inquire about production status and Lead-Free options. 4

Absolute Maximum Ratings (T a =5 C) Parameter Symbol Rating Unit Forward current I F 5 ma * Peak forward current I FM A Reverse voltage V R 6 V Power dissipation P 7 mw Collector-emitter voltage V CEO 35 V Emitter-collector voltage V ECO 6 V Collector current I C 5 ma Collector power dissipation P C 5 mw Total power dissipation P tot mw * Isolation voltage V iso (rms) 5. kv Operating temperature T opr 5 to + C Storage temperature T stg 55 to +5 C *3 Soldering temperature T sol 6 C Input Output * Pulse width µs, Duty ratio :. * 4 to 6%RH, AC for minute, f=6hz *3 For s Electro-optical Characteristics Parameter Forward voltage Input Reverse Current Terminal capacitance Collector dark current Output Transfer characteristics Collector-emitter breakdown voltage Emitter-collector breakdown voltage Collector current Collector-emitter saturation voltage Isolation resistance Symbol V F I R C t I CEO BV CEO BV ECO I C V CE (sat) R ISO f C t r t f Conditions I F =ma V R =4V V=, f=khz V CE =V, I F = I C =.ma, I F = I E =µa, I F = I F =5mA, V CE =5V I F =ma, I C =ma DC5V, 4 to 6%RH MIN. 35 6. 5 TYP.. 3 4.. MAX..4 5.3 (T a =5 C) Floating capacitance C f V=, f=mhz.6. pf Cut-off frequency V CE =5V, I C =ma, R L =Ω, 3dB 5 khz Rise time 4 µs Response time V CE =V, I C =ma, R L =Ω Fall time 5 µs Unit V µa pf µa V V ma V Ω 5

Fig. Forward Current vs. Ambient Temperature Fig. Diode Power Dissipation vs. Ambient Temperature 5 Forward current IF (ma) 4 3 Diode power dissipation P (mw) 8 7 6 4 5 5 5 55 75 5 Ambient temperature T a ( C) 5 5 5 55 75 5 Ambient temperature T a ( C) Fig.3 Collector Power Dissipation vs. Ambient Temperature Fig.4 Total Power Dissipation vs. Ambient Temperature 5 Diode power dissipation P (mw) 8 7 6 4 Total Power dissipation Ptot (mw) 5 5 5 5 5 55 75 5 Ambient temperature T a ( C) 5 5 5 75 5 Ambient temperature T a ( C) Fig.5 Peak Forward Current vs. Duty Ratio Fig.6 Forward Current vs. Forward Voltage Peak forward current IFM (ma) 5 5 5 5 5 Pulse width µs T a =5 C 3 5 5 5 Forward current IF (ma) 5 5 5 T a =75 C 5 C 5 C C 5 C.5..5..5 3. 3.5 Duty ratio Forward voltage V F (V) 6

Fig.7 Current Transfer Ratio vs. Forward Current Current transfer ratio CTR (%) V CE =5V T a =5 C Fig.8 Collector Current vs. Collector-emitter Voltage Collector current IC (ma) I F =3mA 5mA ma 5mA ma 5mA T a =5 C P C (MAX.). 5 Forward current I F (ma) Collector-emitter voltage V CE (V) Fig.9 Relative Current Transfer Ratio vs. Ambient Temperature Relative current transfer ratio (%) 5 5 5 5 5 75 Ambient temperature T a ( C) I F =5mA V CE =5V Fig. Collector - emitter Saturation Voltage vs. Ambient Temperature Collector-emitter saturation voltage VCE (sat) (V).6.4...8.6.4. I F =ma I C =ma 5 5 5 75 Ambient temperature T a ( C) Fig. Collector Dark Current vs. Ambient Temperature Collector dark current ICEO (A) 5 6 7 8 9 5 V CE =V 5 5 75 Ambient temperature T a ( C) Fig. Collector-emitter Saturation Voltage vs. Forward Current Collector-emitter saturation voltage VCE (sat) (V) 6 5 4 3 7mA 5mA 3mA ma I C =.5mA 4 6 8 4 6 8 Forward current I F (ma) T a =5 C 7

Fig.3 Response Time vs. Load Resistance Fig.4 Test Circuit for Response Time Response time (µs) 5 5 5 V CE =V I C =ma T a =5 C t r t d t s t f Input R D R L V CC Output V CE Input Output Please refer to the conditions in Fig.3. t d t s t r % 9% t f.5.... 5 Load resistance R L (kω) Fig.5 Frequency Response Fig.6 Test Circuit for Frequency Response V CE =5V I C =ma T a =5 C R D R L V CC Output Voltage gain Av (db) R L =kω kω Ω V CE Please refer to the conditions in Fig.5..5 5 5 5 Frequency f (khz) Remarks : Please be aware that all data in the graph are just for reference and not for guarantee. 8

Design Considerations Design guide While operating at I F <.ma, CTR variation may increase. Please make design considering this fact. This product is not designed against irradiation and incorporates non-coherent IRED. Degradation In general, the emission of the IRED used in photocouplers will degrade over time. In the case of long term operation, please take the general IRED degradation (5% degradation over 5years) into the design consideration. Recommended Foot Print (reference) 8..7.54. (Unit : mm) For additional design assistance, please review our corresponding Optoelectronic Application Notes. 9

Manufacturing Guidelines Soldering Method Reflow Soldering: Reflow soldering should follow the temperature profile shown below. Soldering should not exceed the curve of temperature profile and time. Please don't solder more than twice. ( C) 3 Terminal : 6 C peak ( package surface : 5 C peak) Preheat 5 to 8 C, s or less Reflow C or more, 6s or less 3 4 (min) Flow Soldering : Due to SHARP's double transfer mold construction submersion in flow solder bath is allowed under the below listed guidelines. Flow soldering should be completed below 7 C and within s. Preheating is within the bounds of to 5 C and 3 to 8s. Please don't solder more than twice. Hand soldering Hand soldering should be completed within 3s when the point of solder iron is below 4 C. Please don't solder more than twice. Other notices Please test the soldering method in actual condition and make sure the soldering works fine, since the impact on the junction between the device and PCB varies depending on the tooling and soldering conditions.

Cleaning instructions Solvent cleaning: Solvent temperature should be 45 C or below Immersion time should be 3minutes or less Ultrasonic cleaning: The impact on the device varies depending on the size of the cleaning bath, ultrasonic output, cleaning time, size of PCB and mounting method of the device. Therefore, please make sure the device withstands the ultrasonic cleaning in actual conditions in advance of mass production. Recommended solvent materials: Ethyl alcohol, Methyl alcohol and Isopropyl alcohol In case the other type of solvent materials are intended to be used, please make sure they work fine in actual using conditions since some materials may erode the packaging resin. Presence of ODC This product shall not contain the following materials. And they are not used in the production process for this device. Regulation substances:cfcs, Halon, Carbon tetrachloride,..-trichloroethane (Methylchloroform) Specific brominated flame retardants such as the PBBOs and PBBs are not used in this product at all.

Package specification Sleeve package Package materials Sleeve : HIPS (with anti-static material) Stopper : Styrene-Elastomer Package method MAX. pcs of products shall be packaged in a sleeve. Both ends shall be closed by tabbed and tabless stoppers. The product shall be arranged in the sleeve with its anode mark on the tabless stopper side. MAX. sleeves in one case. Sleeve outline dimensions. 5 ± 5.8.8 6.7 (Unit : mm)

Tape and Reel package Package materials Carrier tape : PS Cover tape : PET (three layer system) Reel : PS Carrier tape structure and Dimensions F E D G I J H H A B C K C D E Dimensions List A B 6. ±.3 7.5 ±..75 ±. 8. ±. H I J K.4 ±..4 ±.5 4. ±. 5. ±.. ±. 5 MAX. (Unit : mm) F G 4. ±. φ.5 +. Reel structure and Dimensions e d g c a f b Dimensions List (Unit : mm) a 33 b 7.5 ±.5 c ±. d 3 ±.5 e 3 ±. f. ±.5 g. ±.5 Direction of product insertion Pull-out direction [Packing : pcs/reel] 3

Important Notices The circuit application examples in this publication are provided to explain representative applications of SHARP devices and are not intended to guarantee any circuit design or license any intellectual property rights. SHARP takes no responsibility for any problems related to any intellectual property right of a third party resulting from the use of SHARP's devices. Contact SHARP in order to obtain the latest device specification sheets before using any SHARP device. SHARP reserves the right to make changes in the specifications, characteristics, data, materials, structure, and other contents described herein at any time without notice in order to improve design or reliability. Manufacturing locations are also subject to change without notice. Observe the following points when using any devices in this publication. SHARP takes no responsibility for damage caused by improper use of the devices which does not meet the conditions and absolute maximum ratings to be used specified in the relevant specification sheet nor meet the following conditions: (i) The devices in this publication are designed for use in general electronic equipment designs such as: --- Personal computers --- Office automation equipment --- Telecommunication equipment [terminal] --- Test and measurement equipment --- Industrial control --- Audio visual equipment --- Consumer electronics (ii) Measures such as fail-safe function and redundant design should be taken to ensure reliability and safety when SHARP devices are used for or in connection with equipment that requires higher reliability such as: --- Transportation control and safety equipment (i.e., aircraft, trains, automobiles, etc.) --- Traffic signals --- Gas leakage sensor breakers --- Alarm equipment --- Various safety devices, etc. (iii) SHARP devices shall not be used for or in connection with equipment that requires an extremely high level of reliability and safety such as: --- Space applications --- Telecommunication equipment [trunk lines] --- Nuclear power control equipment --- Medical and other life support equipment (e.g., scuba). If the SHARP devices listed in this publication fall within the scope of strategic products described in the Foreign Exchange and Foreign Trade Law of Japan, it is necessary to obtain approval to export such SHARP devices. This publication is the proprietary product of SHARP and is copyrighted, with all rights reserved. Under the copyright laws, no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, for any purpose, in whole or in part, without the express written permission of SHARP. Express written permission is also required before any use of this publication may be made by a third party. Contact and consult with a SHARP representative if there are any questions about the contents of this publication. 4

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