PC2XNNSZF Series DIP pin Reinforced Insulation Type Photocoupler Description PC2XNNSZF Series contains an IRED optically coupled to a phototransistor. It is packaged in a -pin DIP, available in wide-lead spacing option and SMT gullwing lead-form option. Input-output isolation voltage(rms) is 5kV. CTR is 5% to % at input current of 5mA Features. -pin DIP package 2. Double transfer mold package (Ideal for Flow Soldering). Current transfer ratio (CTR : MIN. 5% at I F =5 ma, V CE =5V). Several CTR ranks available 5. Reinforced insulation type (Isolation distance : MIN..mm) 6. Long creepage distance type (wide lead-form type only : MIN. 8mm) 7. High isolation voltage between input and output (V iso (rms) : 5kV) 8. RoHS directive compliant Agency approvals/compliance. Recognized by UL577 (Double protection isolation), fi le No. E68 (as model No. PC2) 2. Approved by BSI, BS-EN665, file No. 787, BS- EN695 fi le No. 79, (as model No. PC2). Approved by SEMKO, EN665, EN695, (as model No. PC2). Approved by DEMKO, EN665, EN695, (as model No. PC2) 5. Approved by NEMKO, EN665, EN695, (as model No. PC2) 6. Approved by FIMKO, EN665, EN695, (as model No. PC2) 7. Recognized by CSA fi le No. CA952, (as model No. PC2) 8. Approved by VDE, DIN EN677-5-2( ) (as an option), fi le No. 887 (as model No. PC2) 9. Package resin : UL fl ammability grade (9V - ) ( ) DIN EN677-5-2 : successor standard of DIN VDE88. Applications. I/O isolation for MCUs (Micro Controller Units) 2. Noise suppression in switching circuits. Signal transmission between circuits of different potentials and impedances. Over voltage detection Notice The content of data sheet is subject to change without prior notice. In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that may occur in equipment using any SHARP devices shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest device specification sheets before using any SHARP device. Date Sep.. 26 SHARP Corporation
Internal Connection Diagram 2 2 Anode Cathode Emitter Collector Outline Dimensions (Unit : mm). Through-Hole [ex. PC2XNNSZF] 2. Through-Hole (VDE option) [ex. PC2XNYSZF] Anode mark Factory identification mark Date code Anode mark Factory identification mark Date code.2 ±..6 ±.2 2 θ PC2 6.5 ±. 7.62 ±. Epoxy resin.26 ±. θ : to 2.5 ±.25 θ.58 ±. 2.7 ±.5.58 ±.. ±.5.5 ±.5.5 TYP..5 ±..2 ±..6 ±.2 2 θ PC2 6.5 ±. 2.5 ±.25.58 ±. 7.62 ±..58 ±. Epoxy resin.26 ±. θ : to θ SHARP mark "S" VDE idenfication mark 2.7 ±.5. ±.5.5 ±.5.5 TYP..5 ±. Product mass : approx..2g. Wide Through-Hole Lead-Form [ex. PC2XNNFZF] Product mass : approx..2g. Wide Through-Hole Lead-Form (VDE option) [ex. PC2XNYFZF].2 ±. Anode mark.6 ±.2 Factory identification mark Date code 2.5 ±.25.2 ±. Anode mark.6 ±.2 Factory identification mark Date code 2.5 ±.25 PC2 2 PC2 2.58 ±.. ±. 6.5 ±..58 ±.. ±. 6.5 ±. SHARP mark "S" VDE idenfication mark 7.62 ±..58 ±..5 ±.5 7.62 ±..58 ±..5 ±.5 2.7 MIN. Epoxy resin.6 ±.5.26 ±..5 ±. 2.7 MIN. Epoxy resin.6 ±.5.26 ±..5 ±. Product mass : approx..2g Product mass : approx..2g 2
(Unit : mm) 5. SMT Gullwing Lead-Form (VDE option) [ex. PC2XNYIPF] 6. Wide SMT Gullwing Lead-Form [ex. PC2XNNUPF].2 ±. Anode mark.6 ±.2 Factory identification mark Date code 2.5 ±.25.2 ±. Anode mark.6 ±.2 Factory identification mark Date code 2 PC2.58 ±. 2 PC2.58 ±. 6.5 ±. SHARP mark "S" VDE idenfication mark. ±. 6.5 ±. 7.62 ±. 2.5 ±.25.58 ±..26 ±. 7.62 ±..5 ±.25.58 ±..5 ±.5.75 ±.25.25 ±.25.26 ±. Epoxy resin.6 ±.5.75 ±.25.5 ±.5.5 ±.. +.. Epoxy resin. +..5. +.. 2.5 ±.25 2 MAX Product mass : approx..22g Product mass : approx..22g 7. Wide SMT Gullwing Lead-Form (VDE option) [ex. PC2XNYUPF].2 ±. Anode mark.6 ±.2 Factory identification mark Date code 2 PC2.58 ±.. ±. 6.5 ±. SHARP mark "S" VDE idenfication mark 7.62 ±. 2.5 ±.25.58 ±..25 ±.25.26 ±..5 ±.5.75 ±.25 Epoxy resin.6 ±.5.75 ±.25 2 MAX.5 ±. Product mass : approx..22g
Date code (2 digit) st digit 2nd digit Year of production Month of production A.D. Mark A.D. Mark Month Mark 99 A 22 P January 99 B 2 R February 2 992 C 2 S March 99 D 25 T April 99 E 26 U May 5 995 F 27 V June 6 996 H 28 W July 7 997 J 29 X August 8 998 K 2 A September 9 999 L 2 B October O 2 M 22 C November N 2 N : : December D repeats in a 2 year cycle Factory identification mark and Plating material Factory identification Mark Country of origin Plating material no mark Japan SnCu (Cu : TYP. 2%) or Indonesia SnBi (Bi : TYP. 2%) or China SnCu (Cu : TYP. 2%)* SnCu (Cu : TYP. 2%) * Up to Date code "T" (April 25), SnBi (Bi : TYP. 2%). ** This factory marking is for identification purpose only. Please contact the local SHARP sales representative to see the actural status of the production. Refer to the Model Line-up table.
Absolute Maximum Ratings (T a=25 C) Parameter Symbol Rating Unit Forward current I F 5 ma Input * Peak forward current I FM A Reverse voltage V R 6 V Power dissipation P 7 mw Collector-emitter voltage V CEO 7 V Output Emitter-collector voltage V ECO 6 V Collector current I C 5 ma Collector power dissipation P C 5 mw Total power dissipation P tot 2 mw *2 Isolation voltage V iso (rms) 5 kv Operating temperature T opr to + C Storage temperature T stg 55 to +25 C *2 Soldering temperature T sol 26 C * Pulse width ms, Duty ratio :. *2 to 6%RH, AC for minute, f = 6Hz * For s Electro-optical Characteristics Input Output Transfer charac teristics (T a=25 C) Parameter Symbol Condition MIN. TYP. MAX. Unit Forward voltage V F I F=2mA.2. V Reverse current I R V R=V μa Terminal capacitance C t V=, f=khz 25 pf Collector dark current I CEO V CE=5V, I F= na Collector-emitter breakdown voltage BV CEO I C=.mA, I F= 7 V Emitter-collector breakdown voltage BV ECO I E=μA, I F= 6 na Collector current I C I F=5mA, V CE=5V 2.5 2 ma Collector-emitter saturation voltage V CE(sat) I F=2mA, I C=mA..2 V Isolation resistance R ISO DC5V, to 6%RH 5 Ω Floating capacitance C f V=, f=mhz.6 pf Cut-off frequency f C V CE=5V, I C=2mA, R L=Ω, db 8 khz Response time Rise time t r 8 μs V CE=2V, I C=2mA, R L=Ω Fall time t f 8 μs 5
Model Line-up Lead Form Through-Hole Wide Through-Hole I C [ma] Sleeve Package (I F=5mA, pcs/sleeve V CE=5V, DIN Approved Approved T a=25 C) EN677-5-2 PC2XNNSZF PC2XNYSZF PC2XNNFZF PC2XNYFZF With or without 2.5 to 2 PC2XNSZF PC2XYSZF PC2XNFZF PC2XYFZF L 2.5 to 7.5 Model No. PC2X2NSZF PC2X2YSZF PC2X2NFZF PC2X2YFZF M 5 to 2.5 PC2X5NSZF PC2X5YSZF PC2X5NFZF PC2X5YFZF N to 2 PC2X8NSZF PC2X8YSZF PC2X8NFZF PC2X8YFZF E 5 to Lead Form SMT Gullwing Wide SMT Gullwing Package Taping 2 pcs/reel DIN EN677-5-2 Approved Approved Model No. I C [ma] (I F=5mA, V CE=5V, T a=25 C) PC2XNYIPF PC2XNNUPF PC2XNYUPF With or without 2.5 to 2 PC2XYIPF PC2XNUPF PC2XYUPF L 2.5 to 7.5 PC2X2YIPF PC2X2NUPF PC2X2YUPF M 5 to 2.5 PC2X5YIPF PC2X5NUPF PC2X5YUPF N to 2 PC2X8YIPF PC2X8NUPF PC2X8YUPF E 5 to Please contact a local SHARP sales representative to inquire about production status. 6
Fig. Forward Current vs. Ambient Temperature Fig.2 Diode Power Dissipation vs. Ambient Temperature 5 Forward current IF (ma) 2 Diode power dissipation P (mw) 8 7 6 2 25 5 55 75 25 Ambient temperature T a ( C) 25 5 55 75 25 Ambient temperature T a ( C) Fig. Collector Power Dissipation vs. Ambient Temperature 25 Fig. Total Power Dissipation vs. Ambient Temperature 25 Collector power dissipation PC (mw) 2 5 5 Total Power dissipation Ptot (mw) 2 5 5 25 5 75 25 Ambient temperature T a ( C) 25 5 75 25 Ambient temperature T a ( C) Fig.5 Peak Forward Current vs. Duty Ratio Fig.6 Forward Current vs. Forward Voltage Peak forward current IFM (ma) Pulse width μs T a =25 C Forward current IF (ma) T a =75 C 5 C 25 C C 25 C 2.5.5 2 2.5.5 Duty ratio Forward voltage V F (V) 7
Fig.7 Current Transfer Ratio vs. Forward Current Current transfer ratio CTR (%) Fig.9 Relative Current Transfer Ratio vs. Ambient Temperature Relative current transfer ratio (%) 25 2 5 5. 5 5 Forward current I F (ma) V CE =5V T a =25 C 25 5 75 Ambient temperature T a ( C) I F =5mA V CE =5V Fig.8 Collector Current vs. Collector-emitter Voltage Collector current IC (ma) Fig. Collector - emitter Saturation Voltage vs. Ambient Temperature Collector-emitter saturation voltage VCE (sat) (V) 6 5 8 2 6 2 8 2 6.6..2 2 5 6 7 8 9..8.6..2 I F =ma P C (MAX.) I F =2mA I F =ma I F =5mA Collector-emitter voltage V CE (V) Ambient temperature T a ( C) T a =25 C I F =2mA I C =ma 2 6 8 Fig. Collector Dark Current vs. Ambient Temperature Collector dark current ICEO (A) 5 V CE =5V 6 7 8 9 Fig.2 Response Time vs. Load Resistance Response time (μs) t d t s t r t f V CE =2V I C =2mA T a =25 C 2 6 8 Ambient temperature T a ( C)... Load resistance (kω) 8
Fig. Test Circuit for Response Time Fig. Frequency Response Input R D R L V CC Output V CE Input Output Please refer to the conditions in Fig.2. t d t s t r % 9% t f Voltage gain Av (db) 5 5 5 V CE =5V I C =2mA T a =25 C R L =kω kω Ω 2. Frequency (khz) Fig.5 Collector-emitter Saturation Voltage vs. Forward Current Collector-emitter saturation voltage VCE (sat) (V) 5.5.5 2.5 2.5.5 I C =.5mA ma ma 5mA 7mA 2 6 8 2 6 8 2 Forward current I F (ma) T a =25 C Remarks : Please be aware that all data in the graph are just for reference and not for guarantee. 9
Design Considerations Design guide While operating at I F <ma, CTR variation may increase. Please make design considering this fact. This product is not designed against irradiation and incorporates non-coherent IRED. Degradation In general, the emission of the IRED used in photocouplers will degrade over time. In the case of long term operation, please take the general IRED degradation (5% degradation over 5 years) into the design consideration. Recommended foot print (reference) SMT Gullwing lead-form 8.2 Wide SMT Gullwing lead-form.2.7.7 2.5 2.5 2.2 2.2 (Unit : mm) For additional design assistance, please review our corresponding Optoelectronic Application Notes.
Manufacturing Guidelines Soldering Method Refl ow Soldering : Refl ow soldering should follow the temperature profi le shown below. Soldering should not exceed the curve of temperature profi le and time. Please don't solder more than twice. ( C) Terminal : 26 C peak (package surface : 25 C peak) 2 Preheat 5 to 8 C, 2s or less Reflow 22 C or more, 6s or less 2 (min) Flow Soldering : Due to SHARP's double transfer mold construction submersion in fl ow solder bath is allowed under the below listed guidelines. Flow soldering should be completed below 27 C and within s. Preheating is within the bounds of to 5 C and to 8s. Please don't solder more than twice. Hand soldering Hand soldering should be completed within s when the point of solder iron is below C. Please don't solder more than twice Other notice Please test the soldering method in actual condition and make sure the soldering works fi ne, since the impact on the junction between the device and PCB varies depending on the tooling and soldering conditions.
Cleaning instructions Solvent cleaning : Solvent temperature should be 5 C or below. Immersion time should be minutes or less. PC2XNNSZF Series Ultrasonic cleaning : The impact on the device varies depending on the size of the cleaning bath, ultrasonic output, cleaning time, size of PCB and mounting method of the device. Therefore, please make sure the device withstands the ultrasonic cleaning in actual conditions in advance of mass production. Recommended solvent materials : Ethyl alcohol, Methyl alcohol and Isopropyl alcohol. In case the other type of solvent materials are intended to be used, please make sure they work fi ne in actual using conditions since some materials may erode the packaging resin. Presence of ODC This product shall not contain the following materials. And they are not used in the production process for this product. Regulation substances : CFCs, Halon, Carbon tetrachloride,..-trichloroethane (Methylchloroform) Specifi c brominated fl ame retardants such as the PBB and PBDE are not used in this product at all. This product shall not contain the following materials banned in the RoHS Directive (22/95/EC). Lead, Mercury, Cadmium, Hexavalent chromium, Polybrominated biphenyls (PBB), Polybrominated diphenyl ethers (PBDE). 2
Package specification Sleeve package. Through-Hole Package materials Sleeve : HIPS (with anti-static material) Stopper : Styrene-Elastomer Package method MAX. pcs of products shall be packaged in a sleeve. Both ends shall be closed by tabbed and tabless stoppers. The product shall be arranged in the sleeve with its anode mark on the tabless stopper side. MAX. 2 sleeves in one case. Sleeve outline dimensions 2 52 ±2 5.8.8 6.7 (Unit : mm) 2. Wide Through-Hole Package materials Sleeve : HIPS (with anti-static material) Stopper : Styrene-Elastomer Package method MAX. pcs of products shall be packaged in a sleeve. Both ends shall be closed by tabbed and tabless stoppers. The product shall be arranged in the sleeve with its anode mark on the tabless stopper side. MAX. 2 sleeves in one case. Sleeve outline dimensions 5 52 ±2 5.9.8 6.5 (Unit : mm)
Tape and Reel package. SMT Gullwing Package materials Carrier tape : PS Cover tape : PET (three layer system) Reel : PS Carrier tape structure and Dimensions F E D G I J H H A B C K C D E Dimensions List A B 6. ±. 7.5 ±..75 ±. 8. ±. H I J K. ±.. ±.5.2 ±. 5. ±. 2. ±. 5 MAX. (Unit : mm) F G. ±. φ.5 +.. Reel structure and Dimensions e d g c a f b Dimensions List (Unit : mm) a φ b 7.5 ±.5 c φ ± d φ. ±.5 e φ2 ± f 2. ±.5 g 2. ±.5 Direction of product insertion Pull-out direction [Packing : 2 pcs/reel]
2. Wide SMT Gullwing Package materials Carrier tape : PS Cover tape : PET (three layer system) Reel : PS Carrier tape structure and Dimensions F E D G C I J H H A B 5 MAX. K C D E Dimensions List A B 2. ±..5 ±..75 ±. 8. ±. 2. ±. H 2. ±. I. ±.5 J. ±. K 5. ±. (Unit : mm) F G. ±. φ.5 +.. Reel structure and Dimensions e d g c a f b Dimensions List (Unit : mm) a φ b 25.5 ±.5 c φ ± d φ. ±.5 e φ2 ± f 2. ±.5 g 2. ±.5 Direction of product insertion Pull-out direction [Packing : 2 pcs/reel] 5
Important Notices The circuit application examples in this publication are provided to explain representative applications of SHARP devices and are not intended to guarantee any circuit design or license any intellectual property rights. SHARP takes no responsibility for any problems related to any intellectual property right of a third party resulting from the use of SHARP's devices. Contact SHARP in order to obtain the latest device specification sheets before using any SHARP device. SHARP reserves the right to make changes in the specifications, characteristics, data, materials, structure, and other contents described herein at any time without notice in order to improve design or reliability. Manufacturing locations are also subject to change without notice. Observe the following points when using any devices in this publication. SHARP takes no responsibility for damage caused by improper use of the devices which does not meet the conditions and absolute maximum ratings to be used specifi ed in the relevant specifi cation sheet nor meet the following conditions: (i) The devices in this publication are designed for use in general electronic equipment designs such as: --- Personal computers --- Offi ce automation equipment --- Telecommunication equipment [terminal] --- Test and measurement equipment --- Industrial control --- Audio visual equipment --- Consumer electronics (ii) Measures such as fail-safe function and redundant design should be taken to ensure reliability and safety when SHARP devices are used for or in connection with equipment that requires higher reliability such as: --- Transportation control and safety equipment (i.e., aircraft, trains, automobiles, etc.) --- Traffi c signals --- Gas leakage sensor breakers --- Alarm equipment --- Various safety devices, etc. (iii) SHARP devices shall not be used for or in connection with equipment that requires an extremely high level of reliability and safety such as: --- Space applications --- Telecommunication equipment [trunk lines] --- Nuclear power control equipment --- Medical and other life support equipment (e.g., scuba). If the SHARP devices listed in this publication fall within the scope of strategic products described in the Foreign Exchange and Foreign Trade Law of Japan, it is necessary to obtain approval to export such SHARP devices. This publication is the proprietary product of SHARP and is copyrighted, with all rights reserved. Under the copyright laws, no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, for any purpose, in whole or in part, without the express written permission of SHARP. Express written permission is also required before any use of this publication may be made by a third party. Contact and consult with a SHARP representative if there are any questions about the contents of this publication. [E25] 6