L, AL, SAL General Purpose Transistors NPN Silicon Features These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant AECQ Qualified and PPAP Capable S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements MAXIMUM RATINGS Rating Symbol Value Unit CollectorEmitter Voltage V CEO L AL, SAL 4 CollectorBase Voltage L AL, SAL EmitterBase Voltage L AL, SAL V CBO 6 V EBO 5. 6. Collector Current Continuous I C 6 madc Collector Current Peak (Note ) I CM madc THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR 5 Board (Note ) T A = Derate above P D 225.8 mw mw/ C Thermal Resistance, JunctiontoAmbient R JA 556 C/W Total Device Dissipation Alumina Substrate (Note 2) T A = Derate above P D 2.4 mw mw/ C Thermal Resistance, JunctiontoAmbient R JA 47 C/W Junction and Storage Temperature Range T J, T stg 55 to + C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.. FR5 =...62 in. 2. Alumina =.4..24 in. 99.5% alumina.. Reference SOA curve. BASE COLLECTOR 2 EMITTER 2 SOT2 CASE 8 STYLE 6 MARKING DIAGRAM xxx M xxx = P or MB M = Date Code* = PbFree Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 6 of this data sheet. Semiconductor Components Industries, LLC, 2 October, 2 Rev. Publication Order Number: LT/D
ELECTRICAL CHARACTERISTICS (T A = unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS CollectorEmitter Breakdown Voltage (I C = madc, I B = ) A V (BR)CEO 4 CollectorBase Breakdown Voltage (I C = Adc, I E = ) A V (BR)CBO 6 EmitterBase Breakdown Voltage (I E = Adc, I C = ) A V (BR)EBO 5. 6. Collector Cutoff Current (V CE = 6, V EB(off) =. ) I CEX nadc Collector Cutoff Current (V CB =, I E = ) (V CB = 6, I E = ) (V CB =, I E =, T A = ) (V CB = 6, I E =, T A = ) Emitter Cutoff Current (V EB =., I C = ) I EBO nadc Base Cutoff Current (V CE = 6, V EB(off) =. ) I BL 2 nadc ON CHARACTERISTICS DC Current Gain (I C =. madc, V CE = ) (I C =. madc, V CE = ) (I C = madc, V CE = ) (I C = madc, V CE =, T A = 55 C) A only (I C = madc, V CE = ) (Note 4) (I C = madc, V CE =. ) (Note 4) (I C = madc, V CE = ) (Note 4) CollectorEmitter Saturation Voltage (Note 4) (I C = madc, I B = 5 madc) I CBO h FE 5 5 4 V CE(sat)...4. Adc (I C = madc, I B = madc).6. BaseEmitter Saturation Voltage (Note 4) (I C = madc, I B = 5 madc) V BE(sat).6..2 (I C = madc, I B = madc) 2.6 SMALLSIGNAL CHARACTERISTICS CurrentGain Bandwidth Product (Note 5) (I C = 2 madc, V CE = 2, f = MHz) f T 2 MHz Output Capacitance (V CB =, I E =, f =. MHz) C obo 8. pf Input Capacitance (V EB =.5, I C =, f =. MHz) C ibo 25 pf Input Impedance (I C =. madc, V CE =, f =. khz) (I C = madc, V CE =, f =. khz) h ie.25 8..25 k Voltage Feedback Ratio (I C =. madc, V CE =, f =. khz) (I C = madc, V CE =, f =. khz) h re 8. 4. X 4 SmallSignal Current Gain (I C =. madc, V CE =, f =. khz) (I C = madc, V CE =, f =. khz) h fe 2
ELECTRICAL CHARACTERISTICS (T A = unless otherwise noted) Characteristic Symbol Min Max Unit SMALLSIGNAL CHARACTERISTICS Output Admittance (I C =. madc, V CE =, f =. khz) (I C = madc, V CE =, f =. khz) h oe 5. 25 5 mhos Collector Base Time Constant (I E = 2 madc, V CB = 2, f =.8 MHz) rb, C c ps Noise Figure (I C = Adc, V CE =, R S =. k, f =. khz) NF 4. db SWITCHING CHARACTERISTICS (A only) Delay Time Rise Time (V CC =, V BE(off) =.5, I C = madc, I B = 5 madc) t d t r 25 Storage Time Fall Time (V CC =, I C = madc, I B = I B2 = 5 madc) t s t f 225 6 4. Pulse Test: Pulse Width s, Duty Cycle %. 5. f T is defined as the frequency at which h fe extrapolates to unity. ns ns SWITCHING TIME EQUIVALENT TEST CIRCUITS +6 V. to s, DUTY CYCLE % + V +6 V. to s, DUTY CYCLE % + V - 2 V < 2 ns k C S * < pf -4 V < 2 ns k N94 C S * < pf Scope rise time < 4 ns - 4 V *Total shunt capacitance of test jig, connectors, and oscilloscope. Figure. TurnOn Time Figure 2. TurnOff Time hfe, DC CURRENT GAIN 7 7 2 T J = -55 C V CE =. V V CE = V..2..5.7.. 5. 7. 2 7 7. k Figure. DC Current Gain
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)..8.6.4.2 I C =. ma ma ma ma T J =.5..2..5..2..5.. 5. 2 I B, BASE CURRENT (ma) Figure 4. Collector Saturation Region t, TIME (ns) 7 2 7. 5.. t r @ V CC = V t d @ V EB(off) = V t d @ V EB(off) = 5. 7. 2 7 I C /I B = T J = t, TIME (ns) 7 2 7. 5. t s = t s - /8 t f t f V CC = V I C /I B = I B = I B2 T J = 5. 7. 2 7 Figure 5. TurnOn Time Figure 6. TurnOff Time NF, NOISE FIGURE (db) 8. 6. 4. I C =. ma, R S = A, R S = A, R S = k A, R S = 4. k R S = OPTIMUM R S = SOURCE R S = RESISTANCE NF, NOISE FIGURE (db) 8. 6. 4. f =. khz I C = A A A. ma..2.5..2.5. 5. 2 f, FREQUENCY (khz). k k 5. k k 2 k k k R S, SOURCE RESISTANCE (OHMS) Figure 7. Frequency Effects Figure 8. Source Resistance Effects 4
CAPACITANCE (pf) 2 7. 5... C eb C cb.2..5.7.. 5. 7. 2 REVERSE VOLTAGE (VOLTS) ft, CURRENT-GAIN BANDWIDTH PRODUCT (MHz) 7 V CE = 2 V T J =.. 5. 7. 2 7 Figure 9. Capacitances Figure. CurrentGain Bandwidth Product V CE(sat), COLLECTOREMITTER SATURATION VOLTAGE (V)... I C /I B = 55 C.. I C, COLLECTOR CURRENT (A) C Figure. Collector Emitter Saturation Voltage vs. Collector Current V BE(sat), BASEEMITTER SATURATION VOLTAGE (V)..2 I C /I B =...9.8.7.6.5.4..2. 55 C C.. I C, COLLECTOR CURRENT (A) Figure 2. Base Emitter Saturation Voltage vs. Collector Current V BE(on), BASEEMITTER VOLTAGE (V).2...9.8.7.6.5.4..2. V CE = V 55 C C.. I C, COLLECTOR CURRENT (A) COEFFICIENT (mv/ C) +.5 -.5 -. -.5 - - 2.5 R VC for V CE(sat) R VB for V BE..2.5. 5. 2 Figure. Base Emitter Voltage vs. Collector Current Figure 4. Temperature Coefficients 5
ms Thermal Limit s ms ms IC (A).. Single Pulse Test @ T A =... V CE () Figure 5. Safe Operating Area ORDERING INFORMATION Device Specific Marking Code Package Shipping LTG MB SOT2 (PbFree) / Tape & Reel ALTG, SALTG P SOT2 (PbFree) / Tape & Reel LTG MB SOT2 (PbFree), / Tape & Reel ALTG, SALTG P SOT2 (PbFree), / Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8/D. 6
PACKAGE DIMENSIONS SOT2 (TO26) CASE 88 ISSUE AP A E A D 2 e b HE SEE VIEW C L L VIEW C c.25 NOTES:. DIMENSIONING AND TOLERANCING PER ANSI Y4.5M, 982. 2. CONTROLLING DIMENSION: INCH.. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. MILLIMETERS INCHES DIM MIN NOM MAX MIN NOM MAX A.89...5.4.44 A..6...2.4 b.7.44..5.8.2 c.9..8..5.7 D 2.8 2.9.4..4.2 E.2..4.47.5.55 e.78.9 4.7..8 L..2..4.8.2 L.5.54.69.4.2.29 H E 2. 2.4 2.64.8.94.4 STYLE 6: PIN. BASE 2. EMITTER. COLLECTOR.95.7 SOLDERING FOOTPRINT*.95.7.79.9.5.8. SCALE : mm inches *For additional information on our PbFree strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 56, Denver, Colorado 827 USA Phone: 62 or 84486 Toll Free USA/Canada Fax: 6276 or 844867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 82829855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 42 79 29 Japan Customer Focus Center Phone: 8587 7 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative LT/D