N-Channel Switch This device is designed for digital switching applications where very low on resistance is mandatory. Sourced from Process 8. J8/J9/J/MMBFJ8 TO-92. Drain 2. Source 3. Gate 3 2 SuperSOT-3 Marking: I8. Drain 2. Source 3. Gate J8/J9/J/MMBFJ8 Absolute Maximum Ratings * T A =2 C unless otherwise noted Symbol Parameter alue Units DG Drain-Gate oltage 2 GS Gate-Source oltage -2 I GF Forward Gate Current ma T J, T stg Operating and Storage Junction Temperature Range - ~ + C * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: ) These ratings are based on a maximum junction temperature of degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Electrical Characteristics T A =2 C unless otherwise noted Symbol Parameter Test Condition Min. Max. Units Off Characteristics (BR)GSS Gate-Source Breakdwon oltage I G = -µa, DS = -2 I GSS Gate Reverse Current GS = -, DS = GS = -, DS =, T A = C GS (off) Gate-Source Cutoff oltage DS =, I D = na 8 9 On Characteristics I DSS Zero-Gate oltage Drain Current * DS =, I GS = 8 9 r DS (on) Drain-Source On Resistance DS., GS = 8 9 Small Signal Characteristics C dg (on) C sg (off) Drain Gate & Source Gate On Capacitance * Pulse Test: Pulse Width 3µs, Duty Cycle 2.% -3. -2. -. 8 4-3. -2 - -6. -4. 8. 2 8 na na ma ma ma DS =, GS =, f =.MHz 8 pf C dg (on) Drain-Gate Off Capacitance DS =, GS = -, f =.MHz pf C sg (off) Source-Gate Off Capacitance DS =, GS = -, f =.MHz pf Ω Ω Ω 22 Fairchild Semiconductor Corporation Rev. B, November 22
Thermal Characteristics T A =2 C unless otherwise noted Symbol Parameter Max. J8 - *MMBFJ8 Units P D Total Device Dissipation Derate above 2 C 62. 3 2.8 mw mw/ C R θjc Thermal Resistance, Junction to Case 2 C/W R θja Thermal Resistance, Junction to Ambient 37 6 C/W * Device mounted on FR-4 PCB.6.6.6" J8/J9/J/MMBFJ8 22 Fairchild Semiconductor Corporation Rev. B, November 22
Typical Characteristics I D - DRAIN CURRENT (ma) 8 6 4 2 Common Drain-Source GS = -. - 4. -. - 2. - 3. T = 2캜 A C TYP GS(off) = -..4.8.2.6 2 DS - DRAIN-SOURCE OLTAGE () (Ω) r DS - DRAIN "ON" RESISTANCE Parameter Interactions I DSS @ DS =., GS = PULSED r DS @ DS = m, GS = GS(off) @ DS =., I D = 3. na r DS I DSS, _.. GS (OFF) - GATE CUTOFF OLTAGE () I DSS - DRAIN CURRENT (ma) J8/J9/J/MMBFJ8 Figure. Common Drain-Source Figure 2. Parameter Interactions C ts (C rs ) - CAPACITANCE (pf) Common Drain-Source f =. -. MHz C iss ( DS =.) C ( = ) rss DS I - DRAIN CURRENT (ma) D 4 3 2 Common Drain-Source T = 2캜 A C TYP GS(off) = -.7 GS = -. -.2 -.3 -.4 -. -4-8 -2-6 GS - GATE-SOURCE OLTAGE () -2 2 3 4 DS- DRAIN-SOURCE OLTAGE () Figure 3. Common Drain-Source Figure 4. Common Drain-Source r DS - NORMALIZED RESISTANCE 2 2 Normalized Drain Resistance vs Bias oltage @., µa GS(off) r = DS r DS - GS GS(off).2.4.6.8 GS / GS(off) - NORMALIZED GATE-SOURCE OLTAGE () Figure. Normalized Drain Resistance vs Bias oltage e - NOISE OLTAGE (n / Hz) n Noise oltage vs Frequency DG = BW = 6. Hz @ f = Hz, Hz =.2 @ f. khz I D = ma I D =. ma..3.. 2 f - FREQUENCY (khz) Figure 6. Noise oltage vs Frequency 22 Fairchild Semiconductor Corporation Rev. B, November 22
Typical Characteristics (Continued) t ON - TURN-ON TIME (ns) 8 6 4 2 Switching Turn-On Time vs Gate-Source Cutoff oltage T A = 2 C 캜 DD =. GS(off) = - 2 I D = ma I D = 3 ma -2-4 -6-8 - GS(off) - GATE-SOURCE CUTOFF OLTAGE () t OFF - TURN-OFF TIME (ns) 4 3 2 Switching Turn-On Time vs Drain Current T A = 2캜 C DD =. GS(off) = - 2 2 2 I - DRAIN CURRENT (ma) D GS(off) = - 8. GS(off) = -. GS(off) = - 3. J8/J9/J/MMBFJ8 Figure 7. Switching Turn-On Time vs Gate-Source Cutoff oltage Figure 8. Switching Turn-On Time vs Drain Current (Ω) r DS - DRAIN "ON" RESISTANCE On Resistance vs Drain Current GS(off) = - 3. 2캜 C 2 C 캜 2캜 C 2캜 C = GS - C 캜 GS(off) = -. I D - DRAIN CURRENT (ma) g os - OUTPUT CONDUCTANCE ( mhos) µ GS(off) - 4. - 2. Output Conductance vs Drain Current. -. f =. khz. I - DRAIN CURRENT (ma) D =. DG 2 2 2. T A = 2캜 C Figure 9. On Resistance vs Drain Current Figure. Output Conductance vs Drain Current g fs - TRANSCONDUCTANCE (mmhos) T A = 2캜 C DG = f =. khz Transconductance vs Drain Current T = - 캜 C A T = 2캜 A C T = 2캜 A C GS(off) = -. GS(off) = - 3. GS(off) = -.. I D - DRAIN CURRENT (ma) Figure. Transconductance vs Drain Current PD - POWER DISSIPATION(mW) 7 6 TO-92 4 SuperSOT-3 3 2 2 7 2 TEMPERATURE ( o C) Figure 2. Power Dissipation vs Ambient Temperature 22 Fairchild Semiconductor Corporation Rev. B, November 22
Package Dimensions 3.86MAX.46 ±..27TYP [.27 ±.2].2 ±..38 +.. 4.8 +.2. 3.6 ±.2.27TYP [.27 ±.2] (R2.29) TO-92 (.2) 4.47 ±.4 4.8 ±.2.38 +.. J8/J9/J/MMBFJ8 Dimensions in Millimeters 22 Fairchild Semiconductor Corporation Rev. B, November 22
Package Dimensions (Continued) SuperSOT-3 J8/J9/J/MMBFJ8 Dimensions in Millimeters 22 Fairchild Semiconductor Corporation Rev. B, November 22
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