MOSFET MetalOxideSemiconductorFieldEffectTransistor OptiMOS TM OptiMOS TM 3PowerTransistor,1V DataSheet Rev.2. Final PowerManagement&Multimarket
1Description Features Nchannel,normallevel ExcellentgatechargexRDS(on)product(FOM) ExtremelylowonresistanceRDS(on) Highcurrentcapability 175 Coperatingtemperature Pbfreeleadplating;RoHScompliant QualifiedaccordingtoJEDEC 1) fortargetapplication HalogenfreeaccordingtoIEC61249221 1 2 3 4 5 6 7 8 HSOF Tab Table1KeyPerformanceParameters Parameter Value Unit VDS 1 V RDS(on),max 2 mω ID 3 A Gate Pin 1 Drain Tab Source Pin 28 Type/OrderingCode Package Marking RelatedLinks PGHSOF81 2N1N3 1) JSTD2 and JESD22 2
TableofContents Description............................................................................. 2 Maximum ratings........................................................................ 4 Thermal characteristics.................................................................... 4 Electrical characteristics................................................................... 5 Electrical characteristics diagrams........................................................... 7 Package Outlines....................................................................... 11 Revision History........................................................................ 12 Disclaimer............................................................................ 12 3
2Maximumratings attj=25 C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Values Min. Typ. Max. Unit Note/TestCondition Continuous drain current ID 3 212 A TC=25 C 1) TC=1 C Pulsed drain current 1) ID,pulse 12 A TC=25 C Avalanche energy, single pulse EAS 8 mj ID=15A,RGS=25Ω Gate source voltage VGS 2 2 V Power dissipation Ptot 375 W TC=25 C Operating and storage temperature Tj,Tstg 55 175 C IEC climatic category; DIN IEC 681: 55/175/56 3Thermalcharacteristics Table3Thermalcharacteristics Values Parameter Symbol Unit Note/TestCondition Min. Typ. Max. Thermal resistance junction case RthJC.2.4 K/W Thermal resistance junction ambient, minimal footprint RthJA 62 K/W Thermal resistance junction ambient, 6 cm 2 cooling area 2) RthJA 4 K/W 1) See figure 3 2) Device on 4 mm x 4 mm x 1.5 mm epoxy PCB FR4 with 6 cm 2 (one layer, 7 µm thick) copper area for drain connection. PCB is vertical in still air. 4
4Electricalcharacteristics Table4Staticcharacteristics Parameter Symbol Values Min. Typ. Max. Unit Note/TestCondition Drainsource breakdown voltage V(BR)DSS 1 V VGS=V,ID=1mA Gate threshold voltage VGS(th) 2 2.7 3.5 V VDS=VGS,ID=272µA Zero gate voltage drain current IDSS.1 1 1 1 µa VDS=1V,VGS=V,Tj=25 C VDS=1V,VGS=V,Tj=125 C Gatesource leakage current IGSS 1 1 na VGS=2V,VDS=V Drainsource onstate resistance RDS(on) Gate resistance RG 1.9 2.9 Ω 1.7 2.2 2 3.7 mω VGS=1V,ID=15A VGS=6V,ID=75A, Transconductance gfs 125 25 S VDS >2 ID RDS(on)max,ID=15A Table5Dynamiccharacteristics Values Parameter Symbol Unit Note/TestCondition Min. Typ. Max. Input capacitance Ciss 112 14896 pf VGS=V,VDS=5V,f=1MHz Output capacitance Coss 21 2673 pf VGS=V,VDS=5V,f=1MHz Reverse transfer capacitance Crss 69 138 pf VGS=V,VDS=5V,f=1MHz Turnon delay time td(on) 34 ns Rise time tr 58 ns Turnoff delay time td(off) 84 ns Fall time tf 18 ns VDD=5V,VGS=1V,ID=1A, RG,ext=1.6Ω VDD=5V,VGS=1V,ID=1A, RG,ext=1.6Ω VDD=5V,VGS=1V,ID=1A, RG,ext=1.6Ω VDD=5V,VGS=1V,ID=1A, RG,ext=1.6Ω Table6Gatechargecharacteristics 1) Values Parameter Symbol Unit Note/TestCondition Min. Typ. Max. Gate to source charge Qgs 48 nc VDD=5V,ID=1A,VGS=to1V Gate to drain charge Qgd 27 nc VDD=5V,ID=1A,VGS=to1V Switching charge Qsw 42 nc VDD=5V,ID=1A,VGS=to1V Gate charge total Qg 156 27 nc VDD=5V,ID=1A,VGS=to1V Gate plateau voltage Vplateau 4.3 V VDD=5V,ID=1A,VGS=to1V Output charge Qoss 55 nc VDD=5V,VGS=V 1) See Gate charge waveforms for parameter definition 5
Table7Reversediode Parameter Symbol Values Min. Typ. Max. Unit Note/TestCondition Diode continous forward current IS 3 A TC=25 C Diode pulse current IS,pulse 12 A TC=25 C Diode forward voltage VSD.89 1 V VGS=V,IF=15A,Tj=25 C Reverse recovery time trr 86 172 ns VR=5V,IF=IS,diF/dt=1A/µs Reverse recovery charge Qrr 232 nc VR=5V,IF=IS,diF/dt=1A/µs 6
5Electricalcharacteristicsdiagrams Diagram1:Powerdissipation 45 Diagram2:Draincurrent 35 4 35 3 3 25 Ptot[W] 25 2 ID[A] 2 15 15 1 1 5 5 5 1 15 2 TC[ C] Ptot=f(TC) 5 1 15 2 TC[ C] ID=f(TC);VGS 1V Diagram3:Safeoperatingarea 1 4 Diagram4:Max.transientthermalimpedance 1 1 3 1 µs 1 µs 1 µs.5 ID[A] 1 2 1 1 1 ms 1 ms DC ZthJC[K/W] 1 1.2.1.5 1.2.1 single pulse 1 1 1 1 1 1 1 1 2 1 3 VDS[V] ID=f(VDS);TC=25 C;D=;parameter:tp 1 2 1 5 1 4 1 3 1 2 1 1 1 tp[s] ZthJC=f(tp);parameter:D=tp/T 7
Diagram5:Typ.outputcharacteristics 12 Diagram6:Typ.drainsourceonresistance 6 1 V 1 7.5 V 5 4.5 V ID[A] 8 6 4 6 V RDS(on)[mΩ] 4 3 2 5 V 6 V 7.5 V 1 V 2 5 V 1 4.5 V 1 2 3 4 5 VDS[V] ID=f(VDS);Tj=25 C;parameter:VGS 2 4 6 8 1 12 ID[A] RDS(on)=f(ID);Tj=25 C;parameter:VGS Diagram7:Typ.transfercharacteristics 12 Diagram8:Typ.forwardtransconductance 3 1 25 8 2 ID[A] 6 gfs[s] 15 4 1 2 175 C 25 C 5 2 4 6 8 VGS[V] ID=f(VGS); VDS >2 ID RDS(on)max;parameter:Tj 5 1 15 2 ID[A] gfs=f(id);tj=25 C 8
Diagram9:Drainsourceonstateresistance 6 Diagram1:Typ.gatethresholdvoltage 4. 5 3.5 3. 4 2.5 275 µa RDS(on)[mΩ] 3 2 max typ VGS(th)[V] 2. 1.5 275 µa 1. 1.5 6 2 2 6 1 14 18 Tj[ C] RDS(on)=f(Tj);ID=15A;VGS=1V. 6 2 2 6 1 14 18 Tj[ C] VGS(th)=f(Tj);VGS=VDS;parameter:ID Diagram11:Typ.capacitances Diagram12:Forwardcharacteristicsofreversediode 1 5 1 4 Ciss 1 4 25 C 175 C 25 C, 98% 175 C, 98% 1 3 Coss C[pF] 1 3 IF[A] 1 2 1 2 Crss 1 1 1 1 2 4 6 8 1 VDS[V] C=f(VDS);VGS=V;f=1MHz 1..5 1. 1.5 2. VSD[V] IF=f(VSD);parameter:Tj 9
Diagram13:Avalanchecharacteristics 1 3 Diagram14:Typ.gatecharge 1 8 8 V 1 2 25 C 1 C 6 5 V IAS[A] 15 C VGS[V] 4 2 V 1 1 2 1 1 1 1 1 2 1 3 tav[µs] IAS=f(tAV);RGS=25Ω;parameter:Tj(start) 4 8 12 16 Qgate[nC] VGS=f(Qgate);ID=1Apulsed;parameter:VDD Diagram15:Drainsourcebreakdownvoltage 11 Gate charge waveforms 15 VBR(DSS)[V] 1 95 9 6 2 2 6 1 14 18 Tj[ C] VBR(DSS)=f(Tj);ID=1mA 1
6PackageOutlines 1) partially covered with Mold Flash DIM MILLIMETERS INCHES MIN MAX MIN MAX A 2.2 2.4.87.94 b.7.9.28.35 b1 9.7 9.9.382.39 b2.42.5.17.2 c D D2 E E1 E4 E5 e H H1.4 1.28 9.7.6 1.58.16.45.24.416 3.3.13 1.1.382.398 7.5.295 8.5.335 9.46.372 1.2 (BSC).47 (BSC) 11.48 11.88.452.468 6.55 6.75.258.266 H2 7.15.281 H3 3.59.141 H4 3.26.128 N 8 8 K1 4.18.165 L 1.6 2.1.63.83 L1.5.9.2.35 L2.5.7.2.28 L4 1. 1.3.39.51 DOCUMENT NO. Z8B169619 SCALE 2 2 4mm EUROPEAN PROJECTION ISSUE DATE 146213 REVISION 1 Figure1OutlinePGHSOF81,dimensionsinmm/inches 11
RevisionHistory Revision:214217,Rev.2. Previous Revision Revision Date Subjects (major changes since last revision) 2. 214217 Release of final version WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.pleasesendyourproposal(includingareferencetothisdocument)to: erratum@infineon.com Publishedby InfineonTechnologiesAG 81726München,Germany 214InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics.With respecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplication ofthedevice,infineontechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithout limitation,warrantiesofnoninfringementofintellectualpropertyrightsofanythirdparty. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestinfineontechnologiesoffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlifesupportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofinfineontechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlifesupport,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. 12
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