SB320 - SB3100 T A. = 25 C unless otherwise noted. Symbol Parameter Value Units

Similar documents
1.5KE6.8(C)A - 1.5KE440(C)A

FFPF60B150DS. 120 A 60Hz Single Half-Sine Wave T J, T STG Operating Junction and Storage Temperature - 65 to +150 C

TA = 25 C unless otherwise noted. Symbol Parameter Value Units

TA = 25 C unless otherwise noted. Symbol Parameter Value Units


TA = 25 C unless otherwise noted. Symbol Parameter Value Units

SOT-23 Mark: 6U / 6T. TA = 25 C unless otherwise noted. Symbol Parameter Value Units

RURD4120, RURD4120S. Features. 4A, 1200V Ultrafast Diodes. Applications. Ordering Information. Packaging. Symbol. Data Sheet January 2002

Data Sheet January Features. Packaging

MUR840, MUR860, RURP840, RURP860

ANODE 2 CATHODE ANODE 1

Data Sheet January Features. Packaging. 30 A (T C = 145 o C) Repetitive Peak Surge Current... I FRM

Features TO-264 E. Symbol Description SGL40N150D Units V CES Collector-Emitter Voltage 1500 V V GES Gate-Emitter Voltage ± 25 V Collector T

SOT-23 Mark: 62V / 62W / 62X. TA = 25 C unless otherwise noted. Symbol Parameter Value Units

ELECTRICAL CHARACTERISTICS (25 Degrees C Ambient Temperature unless otherwise stated)

RURG Features. 80A, 1000V Ultrafast Diode. Applications. Ordering Information. Packaging. Symbol. Data Sheet January 2002

TA = 25 C unless otherwise noted. Symbol Parameter Value Units

BAV23S Small Signal Diode

Features. TA=25 o C unless otherwise noted. (Note 1b) 0.9. (Note 1c) 0.7

FJL6820. Symbol Parameter Typ Max Units R θjc Thermal Resistance, Junction to Case C/W

TA = 25 C unless otherwise noted. Symbol Parameter Value Units


FJN13003 FJN NPN Silicon Transistor Planar Silicon Transistor

FFA30UP20DN Ultrafast Recovery Power Rectifier

FJAF6810. h FE2 V CE =5V, I C =6A. Symbol Parameter Typ Max Units R θjc Thermal Resistance, Junction to Case 2.08 C/W

FFA60UP30DN Ultrafast Recovery Power Rectifier

FFPF20UP20DP Ultrafast Recovery Power Rectifier

Features. SC70-6 The pinouts are symmetrical; pin 1 and pin 4 are interchangeable. TA=25 o C unless otherwise noted. Symbol Parameter Ratings Units

TYPE NPN PNP. TA = 25 C unless otherwise noted. Symbol Parameter Value Units

FJA4310. Symbol Parameter Value Units

BC547 BC547A BC547B BC547C

Features. (Note 1b) 1.2. (Note 1c) 1.0. (Note 1c) 125

ISL9R860P2, ISL9R860S2, ISL9R860S3ST

FJN965 FJN965. NPN Epitaxial Silicon Transistor

Features. TA=25 o C unless otherwise noted. Symbol Parameter Ratings Units. Pulsed 10 Power Dissipation for Single Operation (Note 1a) 2

Features R DS(ON) = V GS = 4.5 V. TA=25 o C unless otherwise noted

Features S 1. T A=25 o C unless otherwise noted. Symbol Parameter Ratings Units. Pulsed 6 Power Dissipation for Single Operation (Note 1a) 0.

Features. TA=25 o C unless otherwise noted

NDS0605 P-Channel Enhancement Mode Field Effect Transistor

ISL9R3060G2, ISL9R3060P2

Features. 175 C maximum junction temperature rating. T A =25 o C unless otherwise noted

Features S 1. TA=25 o C unless otherwise noted

KSC2881 NPN Epitaxial Silicon Transistor

Features. TO-3P FQA Series

Features. TO-220F SSS Series

QFET TM FQL40N50. Features. TO-264 FQL Series

Features. TA=25 o C unless otherwise noted

Features. Symbol Description SGH23N60UFD Units V CES Collector-Emitter Voltage 600 V V GES Gate-Emitter Voltage ± 20 V Collector T

QFET TM FQP13N06. Features G D. TO-220 FQP Series

QFET TM FQT4N20L. Features. SOT-223 FQT Series

N-Channel Logic Level Enhancement Mode Field Effect Transistor. Features. TA=25 o C unless otherwise noted


RHRP A, 600V Hyperfast Diodes

TA = 25 C unless otherwise noted. Symbol Parameter Value Units

Features. TO-220 FQP Series

QFET TM FQP20N06. Features G D. TO-220 FQP Series

FJC1386 PNP Epitaxial Silicon Transistor FJC1386 PNP Epitaxial Silicon Transistor

Features. TO-3P IRFP Series

Features. I 2 -PAK FQI Series

Features. TO-220 FQP Series

KSA1013 KSA1013 PNP EPITAXIAL SILICON TRANSISTOR. Color TV Audio Output Color TV Vertical Deflection Output

BUZ71. 14A, 50V, Ohm, N-Channel Power MOSFET. Features. Ordering Information. Symbol. Packaging. Data Sheet December 2001

Features. TO-3PN IRFP Series

Features. TA=25 o C unless otherwise noted

QFET TM FQA65N20. Features. TO-3P FQA Series

Features. TO-220F IRFS Series

QFET TM FQP85N06. Features G D. TO-220 FQP Series

Features S 1. TA=25 o C unless otherwise noted

Description. TO-220 FCP Series. Symbol Parameter FDP61N20 Unit. Maximum Lead Temperature for Soldering Purpose, 300 C 1/8 from Case for 5 Seconds

FQA11N90C FQA11N90C. 900V N-Channel MOSFET. Absolute Maximum Ratings T C = 25 C unless otherwise noted. Thermal Characteristics.

BAS16HT1G. Symbol Parameter Value Units V RRM Maximum Repetitive Reverse Voltage 85 V I F(AV) Average Rectified Forward Current 200 ma I FSM

QFET TM FQP13N06L. Features G D. TO-220 FQP Series

TA = 25 C unless otherwise noted. Symbol Parameter Value Units

IRF610. Features. 3.3A, 200V, Ohm, N-Channel Power MOSFET. Ordering Information. Symbol. Packaging. Data Sheet January 2002

Features D D. I-PAK FQU Series

Features G D. TO-220 FQP Series

Features. Symbol Description FGA25N120AN Units V CES Collector-Emitter Voltage 1200 V V GES Gate-Emitter Voltage ± 20 V Collector T

Features GATE SOURCE. Symbol Parameter Ratings Units V DSS Drain to Source Voltage 400 V V GS Gate to Source Voltage ±30 V Drain Current

Features. Symbol Parameter Q2 Q1 Units

J108/J109/J110/MMBFJ108

Features. Symbol Description FGA25N120AND Units V CES Collector-Emitter Voltage 1200 V V GES Gate-Emitter Voltage ± 20 V Collector T

RFP2N20L. 2A, 200V, Ohm, Logic Level, N-Channel Power MOSFET. Features. Ordering Information. Symbol. Packaging. Data Sheet January 2002

Features. Symbol Description SGH15N60RUFD Units V CES Collector-Emitter Voltage 600 V V GES Gate-Emitter Voltage ± 20 V Collector T

MPSW01 NPN General Purpose Amplifier

KSA539 KSA539. PNP Epitaxial Silicon Transistor

TIS73/TIS74 TIS73/TIS74

KSA1220/1220A. Symbol Parameter Ratings Units V CBO Collector-Base Voltage : KSA1220 : KSA1220A V CEO Collector-Emitter Voltage : KSA1220 : KSA1220A

QFET TM FQP17P10. Features. TO-220 FQP Series

KSC1845. h FE2 V CE =6V, I C =1mA. Classification P F E U h FE2 200 ~ ~ ~ ~ 1200

KSB564A KSB564A. PNP Epitaxial Silicon Transistor

Description. TO-3P FDA Series. Symbol Parameter FDA70N20 Unit. Maximum Lead Temperature for Soldering Purpose, 300 C 1/8 from Case for 5 Seconds

Features. Reduced r DS(ON) DRAIN GATE

Description. Symbol Parameter FDAF69N25 Unit. (Note 2) Maximum Lead Temperature for Soldering Purpose, 300 C 1/8 from Case for 5 Seconds

FQA8N100C 1000V N-Channel MOSFET

FQP3N80C/FQPF3N80C 800V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are

Features. 15 A, 30 V. R DS(ON) = 5.5 V GS = 10 V R DS(ON) = 8 V GS = 4.5 V. TA=25 o C unless otherwise noted

QFET FQA36P15. Features

Features. TO-220F SSS Series

FDN359BN N-Channel Logic Level PowerTrench TM MOSFET

QFET FQE10N20LC. Features. TO-126 FQE Series

Transcription:

SB3 - SB30 SB3-SB30 Features 3.0 ampere operation at T A = 75 C with no thermal runaway. For use in low voltage, high frequency inverters free wheeling, and polarity protection applications. DO-AD COLOR BAND DENOTES CATHODE 3.0 Ampere Schottky Barrier Rectifiers Absolute Maximum Ratings* T A = 25 C unless otherwise noted Symbol Parameter Value Units I F(AV) Average Rectified Current 3.0 A.375 " lead length @ T A = 75 C I FSM Non-repetitive Peak Forward Surge Current 8.3 ms single half-sine-wave 80 A Superimposed on rated load (JEDEC method) P D Total Device Dissipation Derate above 25 C 3.6 36 W mw/ C R θja Thermal Resistance, Junction to Ambient 40 C/W T stg Storage Temperature Range -65 to +25 C T J Operating Junction Temperature -65 to +25 C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. Electrical Characteristics T A = 25 C unless otherwise noted Symbol Parameter Device Units 3 330 340 350 360 380 30 V RRM Maximum Repetitive Reverse Voltage 30 40 50 60 80 0 V V RMS Maximum RMS Voltage 4 2 28 35 42 56 80 V V R DC Reverse Voltage (Rated V R) 30 40 50 60 80 80 V I RM Maximum Reverse Current T A = 25 C 0.5 ma @ rated V R T A = 0 C ma V FM Maximum Forward Voltage @ 3.0 A 500 740 850 mv I rr C Maximum Full Load Reverse Current, Full Cycle T A = 0 C 30 ma Typical Junction Capacitance 80 pf V R = 4.0 V, f =.0 MHz 0 Fairchild Semiconductor Corporation SB3-SB30, Rev. A

Typical Characteristics FORWARD CURRENT (A) 4 3 2 Forward Current Derating Curve SINGLE PHASE HALF WAVE 60HZ RESISTIVE OR INDUCTIVE LOAD.375" 9.5 mm LEAD LENGTHS FORWARD CURRENT (A) Schottky Barrier Rectifiers (continued) Forward Characteristics T = 25 º J C Pulse Width = 0µS SB3-SB340 SB350-SB360 SB380-SB30 SB3-SB30 0 0 40 60 80 0 40 LEAD TEMPERATURE ( º C) 0. 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 FORWARD VOLTAGE (V) FORWARD SURGE CURRENT (A) 80 70 60 50 40 30 Non-Repetitive Surge Current 8.3ms Single Half Sine-Wave JEDEC Method 2 5 50 0 NUMBER OF CYCLES AT 60Hz REVERSE CURRENT (ma) 0 0. Reverse Characteristics SB3 SB360 SB30 T J = 25 º C T J = 75 º C T = 25 º J C 0.0 5 5 25 30 35 40 REVERSE VOLTAGE (V) CAPACITANCE (pf) 00 800 600 400 0 0 80 60 40 Junction Capacitance 0. 0.4 4 40 0 REVERSE VOLTAGE (V) SB3-SB30, Rev. A

DO-AD/AE Tape and Reel Data DO-AD/AE Packaging Configuration: Figure.0 F63TNR or Human Readable Label Corrugated Outer liner DO-AD/AE TNR Intermediate Container Options White (Anode) Red/Blue (Cathode) DO-AD/AE Packaging Information Table : Figure 2.0 DO-AD/AE Packaging Information Packaging Option Packaging type Qty per Reel/Tube/Bag Reel Size (inch diameter) Inside Tape Spacing (mm) Int Box Dimension (mm) Max qty per Box Weight per unit (gm) Weight per Reel (kg) Note/Comments Under package code P3 TNR 250 3 52 340x340x4 6,250. AD/. AE.50 AD/. AE Kraft Paper wounded between layers 340mm x 340mm x 4mm (6,250 max) F63TNR Label sample LOT: CBVK74B09 FSID: N5400 QTY: 250 SPEC: D/C: T0030 QTY: SPEC REV: D/C2: QTY2: CPN: FAIRCHILD SEMICONDUCTOR INTERNATIONAL Human Readable Label sample (F63TNR)3.2 CAUTION: This container provides protection for static sensitive devices. Handle devices with caution upon removal. MADE IN ONE OR MORE OF THE FOLLOWING COUNTRIES: PHILIPPINES (MACTAN, EXPORT PROCESSING ZONE), MALAYSIA, CHINA, S. KOREA, TAIWAN, THAILAND, SINGAPORE AND JAPAN. I.D. N5400 Qty ANTI-STATIC D/C T0030 Lot 250 CBVK74B09 G DO-AD/AE Taping Dimension: Figure 5.0 L H TAPING DIMENSIONS INCH MM MILS NOTES A 2.5 64.00 259 Overall width +0.066/ +.69/ +66.5/ -0.027-0.69-27.0 F B A.496 38.00 496 +0.059/ +.5 +59-0.039 -.0-39 B 2.047±0.027 52 ±0.69 47±27 Inside Tape Spacing L2 C 0.0 ±0.057.08 ±0.40 394 ±5.7 Component Pitch D 0.047(max).2(max) 47(max) Component Misalignment E 0.022(max) 0.55(max) 22(max) Tape Mismatch E C D F 0.027(max) ±0.69 ±27 Units in line w/ one another G 0.26(min) 3.2(min) 26(min) Lead amount between tapes H 0 0 0 Lead amount beyond tapes L-L2 ±0.027 ±0.69 ±27 Delta between two leads REEL DIMENSIONS ITEM DESCRIPTION SYMBOL MINIMUM MAXIMUM D2 D Reel Diameter D 3.875 4.25 Arbor Hole Diameter (Standard) D2.245.255 Core Diameter D3 3.90 3.3 Flange to Flange Outer Width W 3.400 Note: All Dimensions are in inches W D3 00 Fairchild Semiconductor International August 00, Rev. A

DO-AD Package Dimensions DO-AD (FS PKG Code P3) : Scale : on letter size paper Dimensions shown below are in: inches [millimeters] Part Weight per unit (gram):..0 min (25.4) 0.375 (9.53) 0.285 (7.24) 0.2 (5.60) 0.90 (4.83) 0.052 (.32) 0.048 (.22) 00 Fairchild Semiconductor International August 999, Rev. A

TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx Bottomless CoolFET CROSSVOLT DOME E 2 CMOS TM EnSigna TM FACT FACT Quiet Series FAST DISCLAIMER LIFE SUPPORT POLICY FAIRCHILD S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein:. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms FASTr GlobalOptoisolator GTO HiSeC ISOPLANAR MICROWIRE OPTOLOGIC OPTOPLANAR PACMAN POP PowerTrench QFET QS QT Optoelectronics Quiet Series SILENT SWITCHER SMART START SuperSOT -3 SuperSOT -6 SuperSOT -8 SyncFET TinyLogic UHC VCX FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. Datasheet Identification Product Status Definition Advance Information Preliminary No Identification Needed Formative or In Design First Production Full Production This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. G