TIP147T PNP Epitaxial Silicon Darlington Transistor

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TIP147T PNP Epitaxial Silicon Darlington Transistor Features Monolithic Construction with Built-in Base-Emitter Shunt Resistors High DC Current Gain: h FE = 1000 at = -4 V, = -5 A (Minimum) Industrial Use Complement to TIP142T 1 TO-220 1.Base 2.Collector 3.Emitter B Equivalent Circuit R1 Ω Ω R2 C E November 2014 Ordering Information Part Number Top Mark Package Packing Method TIP147T TIP147T TO-220 3L (Single Gauge) Bulk TIP147TTU TIP147T TO-220 3L (Single Gauge) Rail Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at T C = 25 C unless otherwise noted. Symbol Parameter Value Unit V CBO Collector-Base Voltage 0 V O Collector-Emitter Voltage 0 V V EBO Emitter-Base Voltage -5 V Collector Current (DC) A P Collector Current (Pulse) -15 A Base Current (DC) -0.5 A P C Collector Dissipation (T C = 25 C) 80 W T J Junction Temperature 150 C T STG Storage Temperature Range -65 to 150 C TIP147T Rev. 1.1.0

Electrical Characteristics Values are at T C = 25 C unless otherwise noted. Symbol Parameter Conditions Min. Typ. Max. Unit O (sus) Collector-Emitter Sustaining Voltage = -30 ma, = 0 0 V EO Collector Cut-Off Current = -50 V, = 0-2 ma BO Collector Cut-Off Current V CB = 0 V, I E = 0-1 ma I EBO Emitter Cut-Off Current V EB = -5 V, = 0-2 ma h FE DC Current Gain = -4 V, = -5 A 1000 = -4 V, = A 500 (sat) Collector-Emitter Saturation Voltage = -5 A, = ma -2 = A, = -40 ma -3 V V BE (sat) Base-Emitter Saturation Voltage = A, = -40 ma -3.5 V V BE (on) Base-Emitter On Voltage = -4 V, = A -3 V t D Delay Time 0.15 μs V CC = -30 V, = -5 A, t R Rise Time 1 = -20 ma, 0.55 μs t STG Storage Time 2 = 20 ma, 2.50 μs R L = 6 Ω t F Fall Time 2.50 μs TIP147T Rev. 1.1.0 2

Typical Performance Characteristics V BE (sat), (sat)[v], SATURATION VOLTAGE -9-8 -7-6 -5-4 -3-2 -1-0 -0-1 -2-3 -4-5 -1-0.1 = -2000μA = -1800μA = -1600μA = -1400μA = -1200μA = 00μA = -800μA = -600μA = -400μA [V], COLLECTOR-EMITTER VOLTAGE Figure 1. Static Characteristic V BE (sat) (sat) =-500-0.01-0.1-1 0 h FE, DC CURRENT GAIN C ob [pf], CAPACITANCE 100000 10000 1000 100-0.1-1 0 00 0 Figure 2. DC Current Gain = -4V f=0.1mhz -1 0 00 Figure 3. Collector-Emitter Saturation Voltage and Base-Emitter Saturation Voltage V CB [V], COLLECTOR-BASE VOLTAGE Figure 4. Collector Output Capacitance 0 120 100-1 DC TIP145T TIP146T TIP147T P C [W], POWER DISSIPATION 80 60 40 20-0.1-1 0 00 [V], COLLECTOR-EMITTER VOLTAGE Figure 5. Safe Operating Area 0 0 25 50 75 100 125 150 175 T C [ o C], CASE TEMPERATURE Figure 6. Power Derating TIP147T Rev. 1.1.0 3

Physical Dimensions Figure 7. TO-220, MOLDED, 3LEAD, JEDEC VARIATION AB TIP147T Rev. 1.1.0 4

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