UV SMD LED PLCC-2 FEATURES APPLICATIONS. at I F (ma) (ma) MIN. TYP. MAX. MIN. TYP. MAX. MIN. TYP. MAX.

Similar documents
Bicolor SMD LED PLCC-4

Standard SMD LED PLCC-2

Bicolor SMD LED FEATURES APPLICATIONS. (V) (ma) (ma) MIN. TYP. MAX. MIN. TYP. MAX. MIN. TYP. MAX.

Highbright 0603 ChipLED

Standard SMD LED PLCC-2

Standard SMD LED PLCC-2

Low Current SMD LED PLCC-2

Low Current SMD LED PLCC-2

Standard SMD LED in PLCC-2

Highbright 0603 ChipLED

Ultrabright 0402 ChipLED

High Intensity SMD LED PLCC-2

UV SMD LED with Silicone Lens

Standard SMD LED PLCC-2

Low Current SMD LED PLCC-2

UV SMD LED with Silicone Lens

UV SMD LED with Silicone Lens

Reverse Gullwing SMD LED Red

UV SMD LED with Silicone Lens

Power SMD LED PLCC-2

Standard Mini SMD LED

Ultrabright 0603 SMD LED

Standard SMD LED PLCC-2

FEATURES APPLICATIONS. at I F (ma) (ma) MIN. TYP. MAX. MIN. TYP. MAX. MIN. TYP. MAX.

Multi SMD LED RGB FEATURES APPLICATIONS MIN. TYP. MAX. MIN. TYP. MAX. MIN. TYP. MAX.

Bicolor SMD LED PLCC-4

Power SMD LED PLCC-2

Low Current 0603 SMD LED

Mini SMD LED FEATURES APPLICATIONS. FORWARD WAVELENGTH INTENSITY at I F (nm) at I F

VLMH310., VLMO310., VLMY310., VLMG310., VLMP310. Standard SMD LED PLCC-2

Multi SMD LED RGB FEATURES APPLICATIONS. WAVELENGTH (nm) at I F (ma)

Power Mini SMD LED FEATURES APPLICATIONS. at I F (ma) (ma) MIN. TYP. MAX. MIN. TYP. MAX. MIN. TYP. MAX.

Power Mini SMD LED FEATURES APPLICATIONS

Power SMD LED PLCC-2

Standard Mini SMD LED

Standard SMD LED PLCC-2

Dome Lens SMD LED FEATURES APPLICATIONS. WAVELENGTH (nm) at I F (ma)

VLMS333.., VLMR333.., VLMK333.., VLMO333.., VLMY Power SMD LED PLCC-2

VLMS233.., VLMR233.., VLMK233.., VLMO233.., VLMY Power Mini SMD LED

Standard SMD LED PLCC-2

High Speed Infrared Emitting Diode, 940 nm, Surface Emitter Technology

High Speed Infrared Emitting Diode, 830 nm, GaAlAs Double Hetero

High Speed Infrared Emitting Diode, 830 nm, GaAlAs Double Hetero

High Speed Infrared Emitting Diode, 940 nm, GaAlAs Double Hetero

Standard 0603 SMD LED

High Speed Infrared Emitting Diodes, 940 nm, GaAlAs, MQW

High Speed Infrared Emitting Diode, 940 nm, GaAlAs Double Hetero

High Intensity SMD LED

High Speed Infrared Emitting Diode, 890 nm, GaAlAs, DH

High Speed Infrared Emitting Diodes, 940 nm, Surface Emitter Technology

High Speed Infrared Emitting Diode, 850 nm, Surface Emitter Technology

High Speed Infrared Emitting Diode, 940 nm, GaAlAs, MQW

Little Star 1 W Power SMD LED White

Low Current Mini SMD LED

Power SMD LED PLCC-4

Standard SMD LED PLCC-2

High Power Infrared Emitting Diode, 850 nm, Surface Emitter Technology

High Power Infrared Emitting Diode, 850 nm, Surface Emitter Technology

High Speed Infrared Emitting Diodes, 940 nm, Surface Emitter Technology

High Speed Infrared Emitting Diode, 850 nm, GaAlAs, DH

Silicon PIN Photodiode

Standard 0603 SMD LED

Power SMD LED PLCC-4

High Power Infrared Emitting Diode, 850 nm, Surface Emitter Technology

High Efficiency Blue LED in Ø 3 mm Tinted Diffused Package

VLMS333.., VLMR333.., VLMK333.., VLMO333.., VLMY333.. Power SMD LED PLCC-2

Dome Lens SMD LED FEATURES APPLICATIONS. WAVELENGTH (nm) at I F (ma)

High Intensity LED in Ø 3 mm Tinted Diffused Package

High Power Infrared Emitting Diode, 940 nm, Surface Emitter Technology

Dual Color Emitting Diodes, 660 nm and 940 nm

Low Current LED in Ø 5 mm Tinted Diffused Package

Silicon PIN Photodiode

Mini SMD LED FEATURES APPLICATIONS. WAVELENGTH FORWARD VOLTAGE (mcd) at I F (nm) (V) MIN. TYP. MAX. MIN. TYP. MAX. MIN. TYP. MAX.

Silicon PIN Photodiode

Ambient Light Sensor

Bicolor Symbol LED in 2.5 mm x 5 mm Untinted Top-Diffused Package

High Speed Infrared Emitting Diodes, 850 nm, Surface Emitter Technology

Ambient Light Sensor

Silicon PIN Photodiode

High Speed Infrared Emitting Diodes, 850 nm, Surface Emitter Technology

Silicon PIN Photodiode

High Power Infrared Emitting Diode, 850 nm, Surface Emitter Technology

Silicon NPN Phototransistor

High Intensity SMD LED

Silicon PIN Photodiode

Universal LED in Ø 3 mm Tinted Diffused Package

Silicon PIN Photodiode

Silicon PIN Photodiode

Universal LED in Ø 5 mm Tinted Diffused Package

Ambient Light Sensor in 0805 Package

Silicon PIN Photodiode

Silicon PIN Photodiode

VLMS233.., VLMR233.., VLMK233.., VLMO233.., VLMY Power Mini SMD LED

High Efficiency LED in Ø 3 mm Tinted Diffused Package

High Power Infrared Emitting Diode, 940 nm, GaAlAs, MQW

Ultrabright White LED, Ø 3 mm

High Speed Infrared Emitting Diodes, 940 nm, GaAlAs, MQW

High Speed Infrared Emitting Diodes, 940 nm, Surface Emitter Technology

Silicon Phototransistor in 0805 Package

Silicon PIN Photodiode

Transcription:

UV SMD LED PLCC-2 VLMU31 19225 DESCRIPTION The package of the VLMU31 series is the PLCC-2. It consists of a lead frame which is embedded in a white thermoplast. The reflector inside this package is filled up with clear silicone which guarantees long life time. The viewing angle is 12, package dimensions are 3.2 mm x 2.8 mm x 1.9 mm. PRODUCT GROUP AND PACKAGE DATA Product group: LED Package: SMD PLCC-2 Product series: standard Angle of half intensity: ± 6 Lead-finishing: Ag FEATURES UV SMD LED with exceptional brightness High efficient InGaN technology Long life time due to silicone casting Compatible with automatic placement equipment EIA and ICE standard package Compatible with IR reflow and vapor phase Available in 8 mm tape Low profile package Non-diffused lens: excellent for coupling to light pipes and backlighting Low power consumption Preconditioning according to JEDEC level 2a ESD-withstand voltage: up to 1 kv according to JESD22-A114-B Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS Curing of glue and laquer Recognition of safety features of money bills SAFETY ADVICES Depending on the mode of operation, these devices emit highly concentrated non visible ultraviolet light which can be hazardous to the human eye. Products which incorporate these devices have to follow the safety precautions given in IEC 6825-1 Safety of Laser Products. PARTS TABLE PART COLOR RADIANT INTENSITY WAVELENGTH FORWARD VOLTAGE (mw/sr) at I F (nm) at I F (V) at I F (ma) (ma) (ma) MIN. TYP. MAX. MIN. TYP. MAX. MIN. TYP. MAX. TECHNOLOGY VLMU31-GS8 Ultraviolet 1.8 2.5 3 2 4 45 41 2 2.8 3.2 3.8 2 InGaN ABSOLUTE MAXIMUM RATINGS (T amb = 25 C, unless otherwise specified) VLMU31 PARAMETER TEST CONDITION SYMBOL VALUE UNIT Forward current I F 3 ma Surge forward current t p 1 μs I FSM.1 A Power dissipation P tot 12 mw Junction temperature T j +1 C Operating temperature range T amb -4 to +8 C Storage temperature range T stg -4 to +1 C Solder temperature T sol 26/5 C/s Rev. 1.2, 26-Jun-17 1 Document Number: 82556 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91

VLMU31 OPTICAL AND ELECTRICAL CHARACTERISTICS (T amb = 25 C, unless otherwise specified) VLMU31, ULTRAVIOLET PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT Radiant intensity I F = 2 ma l e 1.8 2.5 3 mw/sr Radiant power I F = 2 ma φ e - 6.8 - mw Peak wavelength I F = 2 ma λ p 4 45 41 nm Angle of half intensity I F = 2 ma ϕ - ± 6 - deg Forward voltage I F = 2 ma V F 2.8 3.2 3.8 V Reverse current V R = 5 V I R - - 1 μa TYPICAL CHARACTERISTICS (T amb = 25 C, unless otherwise specified) I F - Forward Current (ma) 35 3 25 2 15 1 5 1 2 3 4 5 6 7 8 9 1 T amb - Ambient Temperature ( C) I V rel - Relative Luminous Intensity 95 1319 1..9.8.7.6.4.2 1 2 3 4 5 6 7 8 ϕ - Angular Displacement Fig. 1 - Forward Current vs. Ambient Temperature Fig. 3 - Relative Luminous Intensity vs. Angular Displacement 1 1 I F - Forward Current (ma) 9 8 7 6 5 4 3 2 1 1 2 3 4 5 V F - Forward Voltage (V) I rel - Relative Intensity (%) 9 8 7 6 5 4 3 2 1 375 4 425 45 475 λ - Wavelength (nm) Fig. 2 - Forward Current vs. Forward Voltage Fig. 4 - Relative Intensity vs. Wavelength Rev. 1.2, 26-Jun-17 2 Document Number: 82556 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91

VLMU31 Relative Luminous Intensity (T amb = 25 C) 1..9.8.7.6.5.4.3.2.1 2 4 6 8 1 12 14 16 18 2 I F - Forward Current (ma) I e rel - Relative Radiant Intensity 2.4 2. 1.6 1.2.8.4-4 -2 2 4 6 8 1 T amb - Ambient Temperature ( C) Fig. 5 - Specific Luminous Intensity vs. Forward Current Fig. 6 - Relative Radiant Intensity vs. Ambient Temperature PACKAGE DIMENSIONS in millimeters SOLDER PAD LAYOUT Rev. 1.2, 26-Jun-17 3 Document Number: 82556 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91

VLMU31 METHOD OF TAPING/POLARITY AND TAPE AND REEL SMD LED (VLM3 - SERIES) Vishay s LEDs in SMD packages are available in an antistatic 8 mm blister tape (in accordance with DIN IEC 4 (CO 564) for automatic component insertation. The blister tape is a plastic strip with impressed component cavities, covered by a top tape. ARRANGEMENT OF TAPE FEEDING DIRECTION SOLDERING PROFILE 3 IR Reflow Soldering Profile for Lead (Pb)-Free Soldering Preconditioning according to JEDEC level 2a Temperature ( C) 25 2 15 1 255 C 24 C 217 C max. 12 s max. 3 s max. 1 s max. 26 C 245 C 5 max. ramp up 3 C/s max. ramp down 6 C/s DIMENSIONS OF REEL in millimeters 5 1 15 2 25 3 Time (s) 19885 max. 2 cycles allowed Fig. 7 - Vishay Lead (Pb)-Free Reflow Soldering Profile (according to J-STD-2C) Rev. 1.2, 26-Jun-17 4 Document Number: 82556 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91

BAR CODE PRODUCT LABEL (example only) A B C D E I G A. 2D barcode B. Vishay part number C. Quantity D. SEL = selection code (binning) E. Code of manufacturing plant F. Batch = date code: year / week / plant code G. Region code H. SL = sales location I. Terminations finishing K. Lead (Pb)-free symbol L. Halogen-free symbol M.RoHS symbol DRY PACKING The reel is packed in an anti-humidity bag to protect the devices from absorbing moisture during transportation and storage. Aluminum bag F H M Label K L VLMU31 RECOMMENDED METHOD OF STORAGE Dry box storage is recommended as soon as the aluminum bag has been opened to prevent moisture absorption. The following conditions should be observed, if dry boxes are not available: Storage temperature 1 C to 3 C Storage humidity 6 % RH max. After more than 672 h under these conditions moisture content will be too high for reflow soldering. In case of moisture absorption, the devices will recover to the former condition by drying under the following condition: 192 h at 4 C + 5 C / - C and < 5 % RH (dry air / nitrogen) or 96 h at 6 C + 5 C and < 5 % RH for all device containers or 24 h at 1 C + 5 C not suitable for reel or tubes. An EIA JEDEC standard JESD22-A112 level 2a label is included on all dry bags. CAUTION This bag contains MOISTURE SENSITIVE DEVICES L E V E L 1. Shelf life in sealed bag 12 months at <4 C and < 9% relative humidity (RH) 2. After this bag is opened devices that will be subjected to infrared reflow, vapor-phase reflow, or equivalent processing (peak package body temp. 26 C) must be: a) Mounted within 672 hours at factory condition of < 3 C/6%RH or b) Stored at <1% RH. 3. Devices require baking before mounting if: a) Humidity Indicator Card is >1% when read at 23 C + 5 C or b) 2a or 2b is not met. 2a 4. If baking is required, devices may be baked for: 192 hours at 4 C + 5 C/- C and <5%RH (dry air/nitrogen) or 96 hours at 6±5 o Cand <5%RH For all device containers or 24 hours at 1±5 C Not suitable for reels or tubes Bag Seal Date: (If blank, see bar code label) Note: LEVEL defined by EIA JEDEC Standard JESD22-A113 19786 Reel Example of JESD22-A112 level 2a label 15973 FINAL PACKING The sealed reel is packed into a cardboard box. A secondary cardboard box is used for shipping purposes. ESD PRECAUTION Proper storage and handling procedures should be followed to prevent ESD damage to the devices especially when they are removed from the antistatic shielding bag. Electro-static sensitive devices warning labels are on the packaging. VISHAY SEMICONDUCTORS STANDARD BAR CODE LABELS The standard bar code labels are printed at final packing areas. The labels are on each packing unit and contain specific data. Rev. 1.2, 26-Jun-17 5 Document Number: 82556 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91

Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, Vishay ), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer s technical experts. Product specifications do not expand or otherwise modify Vishay s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. 217 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 8-Feb-17 1 Document Number: 91