BC846/BC546 series. 65 V, 100 ma NPN general-purpose transistors. Type number [1] Package PNP Philips JEITA JEDEC

Similar documents
PDTD113E series. NPN 500 ma, 50 V resistor-equipped transistors; R1 = 1 kω, R2 = 1 kω. 500 ma NPN Resistor-Equipped Transistors (RET) family.

PEMH17; PUMH17. NPN/NPN resistor-equipped transistors; R1 = 47 kω, R2 = 22 kω. NPN/NPN Resistor-Equipped Transistors (RET).

PEMD16; PUMD16. NPN/PNP resistor-equipped transistors; R1 = 22 kω, R2 = 47 kω. Type number Package PNP/PNP NPN/NPN complement complement

PEMB18; PUMB18. PNP/PNP resistor-equipped transistors; R1 = 4.7 kω, R2 = 10 kω. Type number Package NPN/PNP NPN/NPN complement complement

DATA SHEET. BC556; BC557 PNP general purpose transistors DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 1999 Apr 15.

DATA SHEET. 2PC945 NPN general purpose transistor DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 1999 May 28.

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

NPN/PNP general-purpose double transistors. NPN/PNP general-purpose double transistors. Table 1: Product overview Type number Package Configuration

DATA SHEET. 2N5401 PNP high-voltage transistor DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 1999 Apr 08.

65 V, 100 ma NPN general-purpose transistors

DATA SHEET. PUMZ1 NPN/PNP general purpose transistors DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 2002 May 6.

DISCRETE SEMICONDUCTORS DATA SHEET

DATA SHEET. BC847BVN NPN/PNP general purpose transistor DISCRETE SEMICONDUCTORS Nov 07. Product specification Supersedes data of 2001 Aug 30

BC635; BCP54; BCX V, 1 A NPN medium power transistors

DISCRETE SEMICONDUCTORS DATA SHEET. PMBT2222; PMBT2222A NPN switching transistors. Product specification Supersedes data of 1999 Apr 27.

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

65 V, 100 ma NPN/NPN general-purpose transistor. Type number Package PNP/PNP NPN/PNP complement complement

DATA SHEET. BC868 NPN medium power transistor; 20 V, 1 A DISCRETE SEMICONDUCTORS. Product specification Data supersedes data of 1999 Apr 08

DISCRETE SEMICONDUCTORS DATA SHEET M3D883 BOTTOM VIEW. PBSS3540M 40 V, 0.5 A PNP low V CEsat (BISS) transistor. Product specification 2003 Aug 12

DATA SHEET. PBSS4160T 60 V, 1 A NPN low V CEsat (BISS) transistor DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 2003 Jun 24

DATA SHEET. PBSS5350T 50 V, 3 A PNP low V CEsat (BISS) transistor DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 2002 Aug 08

DATA SHEET. PEMZ1 NPN/PNP general purpose transistors DISCRETE SEMICONDUCTORS Nov 07. Product specification Supersedes data of 2001 Sep 25

DATA SHEET. BC618 NPN Darlington transistor DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 2003 Oct Nov 05.

DATA SHEET. BC847BPN NPN/PNP general purpose transistor DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 1999 Apr 26.

DATA SHEET. BF450 PNP medium frequency transistor DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 1997 Jul 11.

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

DATA SHEET. BF324 PNP medium frequency transistor DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 1997 Jul 07.

DISCRETE SEMICONDUCTORS DATA SHEET

DATA SHEET. PUMF12 PNP general purpose transistor; NPN resistor-equipped transistor DISCRETE SEMICONDUCTORS. Product specification 2002 Nov 07

DATA SHEET. BCW31; BCW32; BCW33 NPN general purpose transistors DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 2000 Jul 04

DATA SHEET. PBSS4140V 40 V low V CEsat NPN transistor DISCRETE SEMICONDUCTORS Jun 20. Product specification Supersedes data of 2001 Nov 05

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

PMLL4148L; PMLL4448. High-speed switching diodes. Type number Package Configuration. PMLL4148L SOD80C - single diode PMLL4448 SOD80C - single diode

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

DISCRETE SEMICONDUCTORS DATA SHEET. book, halfpage M3D302. PBSS4140DPN 40 V low V CEsat NPN/PNP transistor. Product specification 2001 Dec 13

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

60 V, 1 A PNP medium power transistors

DISCRETE SEMICONDUCTORS DATA SHEET. PMMT491A NPN BISS transistor. Product specification Supersedes data of 2001 Jun 11.

DISCRETE SEMICONDUCTORS DATA SHEET

DATA SHEET. PMBT5401 PNP high-voltage transistor DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 1999 Apr 15.

DATA SHEET. BSR62 PNP Darlington transistor DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 1999 Apr Nov 11.

BC847 series. 1 Product profile. 45 V, 100 ma NPN general-purpose transistors. 1.1 General description. 1.2 Features and benefits. 1.

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

NPN 5 GHz wideband transistor. The transistor is encapsulated in a 3-pin plastic SOT23 envelope.

PNP low V CEsat Breakthrough In Small Signal (BISS) transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.

DATA SHEET. PBSS4240T 40 V; 2 A NPN low V CEsat (BISS) transistor DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 2001 Jul 13

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

NPN 9 GHz wideband transistor. High power gain Low noise figure High transition frequency Gold metallization ensures excellent reliability.

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

NPN low V CEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package.

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

DISCRETE SEMICONDUCTORS DATA SHEET M3D088. PBSS5120T 20 V, 1 A PNP low V CEsat (BISS) transistor. Product specification 2003 Sep 29

DISCRETE SEMICONDUCTORS DATA SHEET. BF840 NPN medium frequency transistor. Product specification Supersedes data of 1999 Apr 12.

PMD5003K. 1. Product profile. MOSFET driver. 1.1 General description. 1.2 Features. 1.3 Applications. Quick reference data

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

DISCRETE SEMICONDUCTORS DATA SHEET. PMBT2369 NPN switching transistor. Product specification Supersedes data of 1999 Apr 27.

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

DATA SHEET. PEMD12; PUMD12 NPN/PNP resistor-equipped transistors; R1 = 47 kω,r2=47kω DISCRETE SEMICONDUCTORS

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

DATA SHEET. PIMH9; PUMH9; PEMH9 NPN/NPN resistor-equipped transistors; R1 = 10 kω,r2=47kω DISCRETE SEMICONDUCTORS

Table 1: Product overview Type number Package Configuration Nexperia

Planar PIN diode in a SOD882 leadless ultra small SMD plastic package. Pin Description Simplified outline Symbol 1 cathode

PNP general-purpose double transistor. PNP general-purpose double transistor in a small SOT143B Surface-Mounted Device (SMD) plastic package.

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

BC857xMB series. 45 V, 100 ma PNP general-purpose transistors

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

IMPORTANT NOTICE. use

DISCRETE SEMICONDUCTORS DATA SHEET. PMBTA64 PNP Darlington transistor. Product specification Supersedes data of 2002 Nov 07.

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

PMBT Product profile. 2. Pinning information. PNP switching transistor. 1.1 General description. 1.2 Features and benefits. 1.

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

DATA SHEET. PEMD2; PIMD2; PUMD2 NPN/PNP resistor-equipped transistors; R1 = 22 kω,r2=22kω DISCRETE SEMICONDUCTORS

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

BC817W series. 1 Product profile. 45 V, 500 ma NPN general-purpose transistors. 1.1 General description. 1.2 Features and benefits. 1.

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

DISCRETE SEMICONDUCTORS DATA SHEET. BAP50-03 General purpose PIN diode. Product specification Supersedes data of 1999 May 10.

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

PEMD48; PUMD48. NPN/PNP resistor-equipped transistors; R1 = 47 kω, R2 = 47 kω and R1 = 2.2 kω, R2 = 47 kω

2N Product profile. 2. Pinning information. N-channel TrenchMOS FET. 1.1 General description. 1.2 Features. 1.

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

NPN/PNP double low V CEsat Breakthrough In Small Signal (BISS) transistor in a medium power Surface-Mounted Device (SMD) plastic package.

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

PVR100AZ-B series. Integrated Zener diode and NPN bipolar transistor in one package. Table 1. Product overview Type number Package SOT457 complement

BCP56H series. 80 V, 1 A NPN medium power transistors

BUT12AX. 1. Product profile. 2. Pinning information. Silicon diffused power transistor. 1.1 Description. 1.2 Features. 1.

PNP/PNP double low V CEsat Breakthrough In Small Signal (BISS) transistor in a medium power Surface-Mounted Device (SMD) plastic package.

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

Transcription:

65 V, 00 ma NPN general-purpose transistors Rev. 06 7 February 006 Product data sheet. Product profile. General description NPN general-purpose transistors in Surface Mounted Device (SMD) plastic packages. Table : Product overview Type number [] Package PNP Philips JEITA JEDEC complement BC846 SOT - TO-6AB BC856 BC846W SOT SC-70 - BC856W BC846T SOT46 SC-75 - BC856T BC546A [] SOT54 SC-4A TO-9 BC556A BC546B [] SOT54 SC-4A TO-9 BC556B [] Valid for all available selection groups. [] Also available in SOT54A and SOT54 variant packages (see Section ).. Features General-purpose transistors SMD plastic packages Two different gain selections. Applications General-purpose switching and amplification.4 Quick reference data Table : Quick reference data Symbol Parameter Conditions Min Typ Max Unit V CEO collector-emitter voltage open base - - 65 V I C collector current - - 00 ma h FE DC current gain V CE =5V; 0-450 I C =ma h FE group A 0 80 0 h FE group B 00 90 450

65 V, 00 ma NPN general-purpose transistors. Pinning information Table : Pinning Pin Description Simplified outline Symbol SOT; SOT; SOT46 base emitter collector 006aaa44 sym0 SOT54 emitter base collector SOT54A emitter base collector SOT54 variant emitter base collector 00aab47 00aab48 00aab447 sym06 sym06 sym06 Koninklijke Philips Electronics N.V. 006. All rights reserved. Product data sheet Rev. 06 7 February 006 of 4

65 V, 00 ma NPN general-purpose transistors. Ordering information Table 4: Ordering information Type number [] Package Name Description Version BC846 - plastic surface mounted package; leads SOT BC846W SC-70 plastic surface mounted package; leads SOT BC846T SC-75 plastic surface mounted package; leads SOT46 BC546A [] SC-4A plastic single-ended leaded (through hole) package; SOT54 leads BC546B [] SC-4A plastic single-ended leaded (through hole) package; leads SOT54 [] Valid for all available selection groups. [] Also available in SOT54 and SOT54 variant packages (see Section and Section 9). 4. Marking Table 5: Marking codes Type number Marking code [] Type number Marking code [] BC846 D* BC846T M BC846A A* BC846AT A BC846B B* BC846BT B BC846W D* BC546A C546A BC846AW A* BC546B C546B BC846BW B* - - [] * = -: made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China Koninklijke Philips Electronics N.V. 006. All rights reserved. Product data sheet Rev. 06 7 February 006 of 4

65 V, 00 ma NPN general-purpose transistors 5. Limiting values 6. Thermal characteristics Table 6: Limiting values In accordance with the Absolute Maximum Rating System (IEC 604). Symbol Parameter Conditions Min Max Unit V CBO collector-base voltage open emitter - 80 V V CEO collector-emitter voltage open base - 65 V V EBO emitter-base voltage open collector - 6 V I C collector current - 00 ma I CM peak collector current single pulse; - 00 ma t p ms I BM peak base current single pulse; t p ms - 00 ma P tot total power dissipation T amb 5 C [] SOT - 50 mw SOT - 00 mw SOT46-50 mw SOT54-500 mw T j junction temperature - 50 C T amb ambient temperature 65 +50 C T stg storage temperature 65 +50 C [] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. Table 7: Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit R th(j-a) thermal resistance from junction to ambient in free air [] SOT - - 500 K/W SOT - - 65 K/W SOT46 - - 8 K/W SOT54 - - 50 K/W [] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. Koninklijke Philips Electronics N.V. 006. All rights reserved. Product data sheet Rev. 06 7 February 006 4 of 4

65 V, 00 ma NPN general-purpose transistors 7. Characteristics Table 8: Characteristics T amb =5 C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit I CBO collector-base cut-off current V CB =0V; I E =0A - - 5 na V CB =0V; I E =0A; - - 5 µa T j = 50 C I EBO emitter-base cut-off V EB =5V; I E = 0 A - - 00 na current h FE DC current gain h FE group A V CE =5V; I C =0µA - 80 - h FE group B V CE =5V; I C =0µA - 90 - DC current gain V CE =5V; I C = ma 0-450 h FE group A V CE =5V; I C = ma 0 80 0 h FE group B V CE =5V; I C = ma 00 90 450 V CEsat collector-emitter I C = 0 ma; I B = 0.5 ma - 90 00 mv saturation voltage I C = 00 ma; I B =5mA [] - 00 400 mv V BEsat base-emitter I C = 0 ma; I B = 0.5 ma [] - 760 - mv saturation voltage I C = 00 ma; I B =5mA [] - 900 - mv V BE base-emitter voltage I C = ma; V CE =5V [] 580 660 700 mv I C = 0 ma; V CE =5V [] - - 770 mv f T transition frequency V CE =5V; I C = 0 ma; f = 00 MHz 00 - - MHz C c collector capacitance V CB =0V; I E =i e =0A; f=mhz - pf C e emitter capacitance V EB = 0.5 V; I C =i c =0A; - - pf f=mhz NF noise figure I C = 00 µa; V CE =5V; R S =kω; f = khz; B = 00 Hz - 0 db [] Pulse test: t p 00 µs; δ 0.0. [] V BEsat decreases by approximately.7 mv/k with increasing temperature. [] V BE decreases by approximately mv/k with increasing temperature. Koninklijke Philips Electronics N.V. 006. All rights reserved. Product data sheet Rev. 06 7 February 006 5 of 4

65 V, 00 ma NPN general-purpose transistors 400 h FE 00 () mgt7 00 V BE (mv) 000 800 () mgt74 () 00 () 600 00 () 400 () 00 Fig. 0 0 0 0 0 V CE =5V () T amb = 50 C () T amb =5 C () T amb = 55 C Selection A: DC current gain as a function of collector current; typical values Fig. 0 0 0 0 0 V CE =5V () T amb = 55 C () T amb =5 C () T amb = 50 C Selection A: Base-emitter voltage as a function of collector current; typical values 0 V CEsat (mv) mgt75 00 V BEsat (mv) 000 mgt76 () 800 () 0 () () () 600 400 () 00 Fig. 0 0 0 0 0 I C /I B =0 () T amb = 50 C () T amb =5 C () T amb = 55 C Selection A: Collector-emitter saturation voltage as a function of collector current; typical values Fig 4. 0 0 0 0 0 I C /I B =0 () T amb = 55 C () T amb =5 C () T amb = 50 C Selection A: Base-emitter saturation voltage as a function of collector current; typical values Koninklijke Philips Electronics N.V. 006. All rights reserved. Product data sheet Rev. 06 7 February 006 6 of 4

65 V, 00 ma NPN general-purpose transistors 600 h FE 500 () mgt77 00 V BE (mv) 000 mgt78 400 800 () 00 () 600 () 00 400 () 00 () 00 Fig 5. 0 0 0 0 0 V CE =5V () T amb = 50 C () T amb =5 C () T amb = 55 C Selection B: DC current gain as a function of collector current; typical values Fig 6. 0 0 0 0 0 0 V CE =5V () T amb = 55 C () T amb =5 C () T amb = 50 C Selection B: Base-emitter voltage as a function of collector current; typical values 0 4 V CEsat (mv) mgt79 00 V BEsat (mv) 000 mgt70 0 800 600 () () () 0 () 400 () () 00 Fig 7. 0 0 0 0 0 I C /I B =0 () T amb = 50 C () T amb =5 C () T amb = 55 C Selection B: Collector-emitter saturation voltage as a function of collector current; typical values Fig 8. 0 0 0 0 0 I C /I B =0 () T amb = 55 C () T amb =5 C () T amb = 50 C Selection B: Base-emitter saturation voltage as a function of collector current; typical values Koninklijke Philips Electronics N.V. 006. All rights reserved. Product data sheet Rev. 06 7 February 006 7 of 4

65 V, 00 ma NPN general-purpose transistors 8. Package outline.0.8. 0.9..8. 0.8 0.45 0.5.5..4. 0.45 0.5..0.5.5.9 0.48 0.8 0.5 0.09. 0.4 0. 0.5 0.0 04--04 04--04 Fig 9. Package outline SOT (TO-6AB) Fig 0. Package outline SOT (SC-70).8.4 0.45 0.5 0.95 0.60 4..6 0.45 0.8.75.45 0.9 0.7 0.48 0.40 4.8 4.4.7.54 0.0 0.5 0.5 0.0 5. 5.0 4.5.7 04--04 04--6 Fig. Package outline SOT46 (SC-75) Fig. Package outline SOT54 (SC-4A/TO-9) 4..6 4.8 4.4 max 0.48 0.40 0.45 0.8.54 5.08 4..6 4.8 4.4.5 max 0.45 0.8 0.48 0.40.7.54.7 5. 5.0 4.5.7 5. 5.0 4.5.7 04-06-8 05-0-0 Fig. Package outline SOT54A Fig 4. Package outline SOT54 variant Koninklijke Philips Electronics N.V. 006. All rights reserved. Product data sheet Rev. 06 7 February 006 8 of 4

65 V, 00 ma NPN general-purpose transistors 9. Packing information Table 9: Packing methods The indicated -xxx are the last three digits of the NC ordering code. [] Type number [] Package Description Packing quantity 000 5000 0000 BC846 SOT 4 mm pitch, 8 mm tape and reel -5 - -5 BC846W SOT 4 mm pitch, 8 mm tape and reel -5 - -5 BC846T SOT46 4 mm pitch, 8 mm tape and reel -5 - -5 BC546A SOT54 bulk, straight leads - -4 - SOT54A tape and reel, wide pitch - - -6 tape ammopack, wide pitch - - -6 SOT54 variant bulk, delta pinning - - - BC546B SOT54 bulk, straight leads - -4 - SOT54A tape and reel, wide pitch - - -6 tape ammopack, wide pitch - - -6 SOT54 variant bulk, delta pinning - - - [] For further information and the availability of packing methods, see Section 6. [] Valid for all available selection groups. Koninklijke Philips Electronics N.V. 006. All rights reserved. Product data sheet Rev. 06 7 February 006 9 of 4

65 V, 00 ma NPN general-purpose transistors 0. Soldering.90.50 solder lands solder resist 0.85.00.0.70 occupied area 0.85 0.60 (x) solder paste 0.50 (x) 0.60 (x).00.0 MSA49 Fig 5. Reflow soldering footprint SOT (TO-6AB).40.0 (x) solder lands solder resist occupied area 4.60 4.00.0 preferred transport direction during soldering.80 4.50 MSA47 Fig 6. Wave soldering footprint SOT (TO-6AB) Koninklijke Philips Electronics N.V. 006. All rights reserved. Product data sheet Rev. 06 7 February 006 0 of 4

65 V, 00 ma NPN general-purpose transistors.65 0.75.0.5 solder lands.5 0.85 0.60 (x) 0.50 (x).90 solder resist occupied area solder paste 0.55 (x).40 MSA49 Fig 7. Reflow soldering footprint SOT (SC-70) 4.60 4.00.5 solder lands solder resist.65.0.70 occupied area 0.90 (x) preferred transport direction during soldering MSA49 Fig 8. Wave soldering footprint SOT (SC-70).0 0.60.0 0.70 solder lands.00 0.85 0.60 (x).90 0.50 (x).50 MSA48 solder resist occupied area solder paste Fig 9. Reflow soldering footprint SOT46 (SC-75) Koninklijke Philips Electronics N.V. 006. All rights reserved. Product data sheet Rev. 06 7 February 006 of 4

65 V, 00 ma NPN general-purpose transistors. Revision history Table 0: Revision history Document ID Release date Data sheet status Change notice Doc. number Supersedes 006007 Product data sheet - - BC846_BC847_ BC848_5 BC846T_847T_ SERIES_ BC846W_BC847W_ BC848W_4 BC546_547_4 Modifications: BC846_BC847_BC848_5 004006 Product specification BC846T_847T_SERIES_ 0005 Product specification BC846W_BC847W_ BC848W_4 The format of this data sheet has been redesigned to comply with the new presentation and information standard of Philips Semiconductors. This data sheet is a type combination out of the previous data sheets BC846_BC847_BC848_5, BC846T_847T_SERIES_, BC846W_BC847W_BC848W_4 and BC546_547_4. Table 8 Characteristics : F redefined to NF noise figure 00004 Product specification BC546_547_4 0045 Product specification - 997 750 95 BC846_BC847_ BC848_4-997 750 0754 BC846T_847T_ - 997 750 0966 BC846W_847W_ - 997 750 568 BC546_547_ Koninklijke Philips Electronics N.V. 006. All rights reserved. Product data sheet Rev. 06 7 February 006 of 4

65 V, 00 ma NPN general-purpose transistors. Data sheet status Level Data sheet status [] Product status [] [] Definition I Objective data Development This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. II Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. III Product data Production This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). [] Please consult the most recently issued data sheet before initiating or completing a design. [] The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. [] For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.. Definitions Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 604). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 4. Disclaimers customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes Philips Semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. When the product is in full production (status Production ), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. 5. Trademarks Notice All referenced brands, product names, service names and trademarks are the property of their respective owners. Life support These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors 6. Contact information For additional information, please visit: http://www.semiconductors.philips.com For sales office addresses, send an email to: sales.addresses@www.semiconductors.philips.com Koninklijke Philips Electronics N.V. 006. All rights reserved. Product data sheet Rev. 06 7 February 006 of 4

65 V, 00 ma NPN general-purpose transistors 7. Contents Product profile........................... General description....................... Features............................... Applications............................4 Quick reference data..................... Pinning information...................... Ordering information..................... 4 Marking................................ 5 Limiting values.......................... 4 6 Thermal characteristics................... 4 7 Characteristics.......................... 5 8 Package outline......................... 8 9 Packing information...................... 9 0 Soldering............................. 0 Revision history........................ Data sheet status....................... Definitions............................ 4 Disclaimers............................ 5 Trademarks............................ 6 Contact information.................... Koninklijke Philips Electronics N.V. 006 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 7 February 006 Document number: Published in The Netherlands

2024 © hobbydocbox.com Privacy Policy | Terms of Service | Feedback