v3.34 Typical Applications The is suitable for: Wireless Local Loop LMDS & VSAT Point-to-Point Radios Test Equipment Functional Diagram Features Electrical Specifications, T A = +2 C, ma Bias Current Chip Integrates Directly into MIC Designs Carrier Suppression: 2 db Direct Modulation in the 6-11 GHz Band Functions also as a Phase Detector Die Size: 1.4 x 1.3 x.1 mm General Description The Bi-Phase Modulator is designed to phase-modulate an RF signal into reference and 18 degree states. Device input is at the RF port and output is at the LO port. The polarity of the bias current at the control port (IF port) defi nes the phase states. Excellent amplitude and phase balance provided by closely matched monolithic balun and diode circuits delivers 2 db of carrier suppression in a tiny monolithic chip. The device also functions as a demodulator or phase comparator. As a demodulator, data emerges at the control port when a modulated signal at the RF port is compared to a reference signal at the LO port. As a phase comparator, the phase angle between two signals applied to the RF and LO ports is represented by an analog voltage at the control port. Except for carrier suppression, the data presented here was measured under static conditions in which a DC bias current (nominally ma) is applied to the control port. Parameter Min. Typ. Max. Units Frequency Band 6-11 GHz Insertion Loss 9 11 db Return Loss, RF and LO Ports 2. 3. db Amplitude Balance.2. db Phase Balance 1 1 deg Carrier Suppression (When driven with a 1 MHz square wave, 1.4 Vp-p) 1 2 dbc Input Power for 1 db Compression 4 8 dbm Third Order Intercept, Input 1 1 dbm Second Order Intercept, Input 2 4 dbm Bias Current (Bias current forward biases internal Schottky diodes providing approximately.6 V at the control port). 2 1 ma - 14 One Technology Way, P.O. Box 916, Norwood, MA 262-916 Phone: 781-329-47 Order online at www.analog.com 2 Alpha Road, Chelmsford, MA 1824 Phone: 978-2-3343 Fax: 978-2-3373 Application Support: Phone: 1-8-ANALOG-D
v3.17 Insertion Loss Amplitude Balance 2 INSERTION LOSS (db) PHASE BALANCE (Deg) - -1-1 -2 4 6 7 8 9 1 11 12 1 1 - -1-1 4 6 7 8 9 1 11 12 RETURN LOSS (db) - -1-1 AMPLITUDE BALANCE (db) CARRIER SUPPRESSION (dbc) Return Loss 1-1 -2 4 6 7 8 9 1 11 12 4 3 2 Phase Balance Carrier Suppression * 1 6 7 8 9 1 11 12 CARRIER -2 2 3 4 6 7 8 9 1 11 12 13 14 * (For 1.4 Vp-p Square Wave Modulation at 1 MHz) One Technology Way, P.O. Box 916, Norwood, MA 262-916 Phone: 781-329-47 Order online at www.analog.com 2 Alpha Road, Chelmsford, MA 1824 Phone: 978-2-3343 Fax: 978-2-3373 Application Support: Phone: 1-8-ANALOG-D - 1
v3.17 Compression vs Frequency * 12 Compression vs Bias at 9 GHz 14 P1dB (dbm) 1 8 6 4 2 6 7 8 9 1 11 12 Third Order Intercept vs Frequency * Third Order Intercept vs Bias at 9 GHz IP3 (dbm) 2 2 1 1 6 7 8 9 1 11 12 1 2 3 4 6 7 8 9 1 CARRIER BIAS CURRENT (ma) * (For ma Bias Current) Suggested TTL Driver for a Bi-Phase Modulator TTL + Vdc VCC HCT4 V Z = 2V GND P1dB (dbm) IP3 (dbm) +2. Vdc.1 uf VCC HC4 V A *R 1 I A GND 12 1 8 6 4 2 1 2 3 4 6 7 8 9 1 2 2 1 1 BIAS CURRENT (ma) MODULATOR I, Q PORTS.6V Notes 1. V A Alternates Between + 2.4 V dc ± I A = 2.4 -.6 = ± ma 36 Ohm 2.2K -2. Vdc.1 uf HITTITE MODULATOR 2. HCT4 and HC4 are QMOS HEX Inverters. *R 1 =3 to 62 ± 2% Select R 1 To Supply ±3 to ±6 ma to the IF Port. - 16 One Technology Way, P.O. Box 916, Norwood, MA 262-916 Phone: 781-329-47 Order online at www.analog.com 2 Alpha Road, Chelmsford, MA 1824 Phone: 978-2-3343 Fax: 978-2-3373 Application Support: Phone: 1-8-ANALOG-D
v3.17 Outline Drawing Die Packaging Information [1] Standard Alternate WP-3 (Waffle Pack) [2] [1] Refer to the Packaging Information section for die packaging dimensions. [2] For alternate packaging information contact Hittite Microwave Corporation. NOTES: 1. ALL DIMENSIONS ARE IN INCHES [MM]. 2. TYPICAL BOND PAD IS.4 SQUARE. 3. BOND PAD SPACING IS.6 CENTER TO CENTER. 4. BACKSIDE METALIZATION: GOLD.. BACKSIDE METAL IS GROUND. 6. BOND PAD METALIZATION: GOLD. 7. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS. ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS One Technology Way, P.O. Box 916, Norwood, MA 262-916 Phone: 781-329-47 Order online at www.analog.com 2 Alpha Road, Chelmsford, MA 1824 Phone: 978-2-3343 Fax: 978-2-3373 Application Support: Phone: 1-8-ANALOG-D - 17
v3.17 Pad Descriptions Pad Number Function Description Interface Schematic 1 IF This pin is DC coupled. For applications not requiring operation to DC, this port should be DC blocked externally using a series capacitor whose value has been chosen to pass the necessary IF frequency range. For operation to DC this pin must not source or sink more than 2mA of current or die non-function and possible die failure will result. 2 RF DC coupled and matched to Ohms. 3 LO DC coupled and matched to Ohms. - 18 One Technology Way, P.O. Box 916, Norwood, MA 262-916 Phone: 781-329-47 Order online at www.analog.com 2 Alpha Road, Chelmsford, MA 1824 Phone: 978-2-3343 Fax: 978-2-3373 Application Support: Phone: 1-8-ANALOG-D
v3.17 Mounting & Bonding Techniques for Millimeterwave GaAs MMICs The die should be attached directly to the ground plane eutectically or with conductive epoxy (see HMC general Handling, Mounting, Bonding Note). Ohm Microstrip transmission lines on.127mm ( mil) thick alumina thin fi lm substrates are recommended for bringing RF to and from the chip (Figure 1). If.24mm (1 mil) thick alumina thin fi lm substrates must be used, the die should be raised.1mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. One way to accomplish this is to attach the.12mm (4 mil) thick die to a.1mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane (Figure 2). Microstrip substrates should be placed as close to the die as possible in order to minimize bond wire length. Typical die-to-substrate spacing is.76mm to.12 mm (3 to 6 mils). Handling Precautions Follow these precautions to avoid permanent damage. Storage: All bare die are placed in either Waffle or Gel based ESD protective containers, and then sealed in an ESD protective bag for shipment. Once the sealed ESD protective bag has been opened, all die should be stored in a dry nitrogen environment. Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid cleaning systems. Static Sensitivity: Follow ESD precautions to protect against ESD strikes. Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize inductive pickup..12mm (.4 ) Thick GaAs MMIC.76mm (.3 ) Ribbon Bond RF Ground Plane.127mm (. ) Thick Alumina Thin Film Substrate Figure 1..12mm (.4 ) Thick GaAs MMIC.76mm (.3 ) RF Ground Plane Ribbon Bond.1mm (. ) Thick Moly Tab.24mm (.1 Thick Alumina Thin Film Substrate Figure 2. General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or fi ngers. Mounting The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy. The mounting surface should be clean and fl at. Eutectic Die Attach: A 8/2 gold tin preform is recommended with a work surface temperature of 2 deg. C and a tool temperature of 26 deg. C. When hot 9/1 nitrogen/hydrogen gas is applied, tool tip temperature should be 29 deg. C. DO NOT expose the chip to a temperature greater than 32 deg. C for more than 2 seconds. No more than 3 seconds of scrubbing should be required for attachment. Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fi llet is observed around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer s schedule. Wire Bonding RF bonds made with.3 x. ribbon are recommended. These bonds should be thermosonically bonded with a force of 4-6 grams. DC bonds of.1 (.2 mm) diameter, thermosonically bonded, are recommended. Ball bonds should be made with a force of 4- grams and wedge bonds at 18-22 grams. All bonds should be made with a nominal stage temperature of 1 C. A minimum amount of ultrasonic energy should be applied to achieve reliable bonds. All bonds should be as short as possible, less than 12 mils (.31 mm). One Technology Way, P.O. Box 916, Norwood, MA 262-916 Phone: 781-329-47 Order online at www.analog.com 2 Alpha Road, Chelmsford, MA 1824 Phone: 978-2-3343 Fax: 978-2-3373 Application Support: Phone: 1-8-ANALOG-D - 19