NBXDBA V, MHz / MHz LVPECL Clock Oscillator

Similar documents
NBXDBA V, 75 MHz / 150 MHz LVPECL Clock Oscillator

NBXDBA019, NBXHBA019, NBXSBA V, 125 MHz / 250 MHz LVPECL Clock Oscillator

NBXDBA V, 62.5 MHz / 125 MHz LVPECL Clock Oscillator

NBXSBA /3.3 V, MHz LVPECL Clock Oscillator

NBXHGA /3.3 V, MHz LVPECL Clock Oscillator

NBVSPA V, MHz LVDS Voltage-Controlled Clock Oscillator (VCXO) PureEdge Product Series

NBXDPA V / 3.3 V, MHz / MHz LVDS Clock Oscillator

NBXSBA024, NBXSBB024, NBXMBB V / 3.3 V, MHz LVPECL Clock Oscillator

NBXDPA V / 3.3 V, 125 MHz / 250 MHz LVDS Clock Oscillator

MC100LVELT20 Product Preview 3.3VНLVTTL/LVCMOS to Differential LVPECL Translator Description The MC100LVELT20 is a 3.3 V TTL/CMOS to differential PECL

MC10ELT22, MC100ELT22. 5VНDual TTL to Differential PECL Translator

NB2879A. Low Power, Reduced EMI Clock Synthesizer

PCS2I2309NZ. 3.3 V 1:9 Clock Buffer

P2I2305NZ. 3.3V 1:5 Clock Buffer

NB3N502/D. 14 MHz to 190 MHz PLL Clock Multiplier

NTMFS5C604NL. Power MOSFET. 60 V, 1.2 m, 276 A, Single N Channel

NVTFS5124PL. Power MOSFET 60 V, 6 A, 260 m, Single P Channel

MBD301G, MMBD301LT1G. Silicon Hot-Carrier Diodes. SCHOTTKY Barrier Diodes 30 VOLTS SILICON HOT CARRIER DETECTOR AND SWITCHING DIODES

NVTFS5826NL. Power MOSFET 60 V, 24 m, 20 A, Single N Channel

NB4N855S 3.3 V, 1.5 Gb/s Dual AnyLevel to LVDS Receiver/Driver/Buffer/ Translator

NB3N508S. 3.3V, 216 MHz PureEdge VCXO Clock Generator with M LVDS Output

P3P85R01A. 3.3V, 75 MHz to 200 MHz LVCMOS TIMING SAFE Peak EMI Reduction Device

NVTFS5116PL. Power MOSFET. 60 V, 14 A, 52 m, Single P Channel

MC10H352. Quad CMOS to PECL* Translator

NTR4170NT3G. Power MOSFET. 30 V, 3.1 A, Single N Channel, SOT 23

NTMFS4H01N Power MOSFET

MC100EP16VS. 3.3V / 5V ECL Differential Receiver/Driver with Variable Output Swing

NTMFS4936NCT3G. NTMFS4936NC Power MOSFET 30 V, 79 A, Single N Channel, SO 8 FL

NTMFS5H409NL. Power MOSFET. 40 V, 1.1 m, 270 A, Single N Channel

7WB Bit Bus Switch. The 7WB3126 is an advanced high speed low power 2 bit bus switch in ultra small footprints.

MC10EP142, MC100EP V / 5 VНECL 9 Bit Shift Register

NB6L V / 3.3V Differential 2 X 2 Crosspoint Switch with LVPECL Outputs. Multi-Level Inputs w/ Internal Termination

PCS2P2309/D. 3.3V 1:9 Clock Buffer. Functional Description. Features. Block Diagram

NCN Differential Channel 1:2 Mux/Demux Switch for PCI Express Gen3


PCS3P8103A General Purpose Peak EMI Reduction IC

NTNUS3171PZ. Small Signal MOSFET. 20 V, 200 ma, Single P Channel, 1.0 x 0.6 mm SOT 1123 Package

NLAS7213. High-Speed USB 2.0 (480 Mbps) DPST Switch

NB7L32M. 2.5V/3.3V, 14GHz 2 Clock Divider w/cml Output and Internal Termination

NTJS3151P. Trench Power MOSFET. 12 V, 3.3 A, Single P Channel, ESD Protected SC 88

NTTFS5116PLTWG. Power MOSFET 60 V, 20 A, 52 m. Low R DS(on) Fast Switching These Devices are Pb Free and are RoHS Compliant

NCN1154. USB 2.0 High Speed, UART and Audio Switch with Negative Signal Capability

PZTA92T1. High Voltage Transistor. PNP Silicon SOT 223 PACKAGE PNP SILICON HIGH VOLTAGE TRANSISTOR SURFACE MOUNT

NB7V52M. 1.8V / 2.5V Differential D Flip-Flop w/ Reset and CML Outputs. Multi Level Inputs w/ Internal Termination

NCN1154. DP3T USB 2.0 High Speed / Audio Switch with Negative Swing Capability

NUF8001MUT2G. 8-Channel EMI Filter with Integrated ESD Protection

NTNS3164NZT5G. Small Signal MOSFET. 20 V, 361 ma, Single N Channel, SOT 883 (XDFN3) 1.0 x 0.6 x 0.4 mm Package

NTTFS5820NLTWG. Power MOSFET. 60 V, 37 A, 11.5 m. Low R DS(on) Low Capacitance Optimized Gate Charge These Devices are Pb Free and are RoHS Compliant

MMSZ5221BT1 Series. Zener Voltage Regulators. 500 mw SOD 123 Surface Mount

LOGIC DIAGRAM AND PINOUT ASSIGNMENT V CC TTL PECL 3. MARKING DIAGRAMS* ORDERING INFORMATION PIN DESCRIPTION HLT20 ALYW KLT20 ALYW

NSBC114EDP6T5G Series. Dual Digital Transistors (BRT) NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network

P2042A LCD Panel EMI Reduction IC

NTK3139P. Power MOSFET. 20 V, 780 ma, Single P Channel with ESD Protection, SOT 723

NLAS5157. Ultra-Low 0.4 SPDT Analog Switch

MMSD301T1G SMMSD301T1G, MMSD701T1G SMMSD701T1G, SOD-123 Schottky Barrier Diodes

NCP A, Low Dropout Linear Regulator with Enhanced ESD Protection

NTHS2101P. Power MOSFET. 8.0 V, 7.5 A P Channel ChipFET

NTTFS3A08PZTWG. Power MOSFET 20 V, 15 A, Single P Channel, 8FL

NVLJD4007NZTBG. Small Signal MOSFET. 30 V, 245 ma, Dual, N Channel, Gate ESD Protection, 2x2 WDFN Package

PCS3P73U00/D. USB 2.0 Peak EMI reduction IC. General Features. Application. Product Description. Block Diagram

NLAS7222B, NLAS7222C. High-Speed USB 2.0 (480 Mbps) DPDT Switches

NB3N108K. 3.3V Differential 1:8 Fanout Clock Data Driver with HCSL Outputs

NB3N853531E. 3.3 V Xtal or LVTTL/LVCMOS Input 2:1 MUX to 1:4 LVPECL Fanout Buffer

NUF6400MNTBG. 6-Channel EMI Filter with Integrated ESD Protection

MMBTA06W, SMMBTA06W, Driver Transistor. NPN Silicon. Moisture Sensitivity Level: 1 ESD Rating: Human Body Model 4 kv ESD Rating: Machine Model 400 V

MMBFU310LT1G. JFET Transistor. N Channel. These Devices are Pb Free, Halogen Free/BFR Free and are RoHS Compliant. Features.

MUN5311DW1T1G Series.

NS5S1153. DPDT USB 2.0 High Speed / Audio Switch with Negative Swing Capability

NTJS4405N, NVJS4405N. Small Signal MOSFET. 25 V, 1.2 A, Single, N Channel, SC 88

NTLUD3A260PZ. Power MOSFET 20 V, 2.1 A, Cool Dual P Channel, ESD, 1.6x1.6x0.55 mm UDFN Package

MC3488A. Dual EIA 423/EIA 232D Line Driver

MC10EP57, MC100EP V / 5V ECL 4:1 Differential Multiplexer

ASM3P2669/D. Peak EMI Reducing Solution. Features. Product Description. Application. Block Diagram

NTA4001N, NVA4001N. Small Signal MOSFET. 20 V, 238 ma, Single, N Channel, Gate ESD Protection, SC 75

NUF6105FCT1G. 6-Channel EMI Filter with Integrated ESD Protection

MJD44H11 (NPN) MJD45H11 (PNP)

MUN5216DW1, NSBC143TDXV6. Dual NPN Bias Resistor Transistors R1 = 4.7 k, R2 = k. NPN Transistors with Monolithic Bias Resistor Network

MBD110DWT1G MBD330DWT1G. Dual Schottky Barrier Diodes

NUF8401MNT4G. 8-Channel EMI Filter with Integrated ESD Protection

MJD44H11 (NPN) MJD45H11 (PNP) Complementary Power Transistors. DPAK For Surface Mount Applications

NB3N106K. 3.3V Differential 1:6 Fanout Clock Driver with HCSL Outputs

NUF4401MNT1G. 4-Channel EMI Filter with Integrated ESD Protection

BAT54CLT3G SBAT54CLT1G. Dual Common Cathode Schottky Barrier Diodes 30 VOLT DUAL COMMON CATHODE SCHOTTKY BARRIER DIODES

LM339S, LM2901S. Single Supply Quad Comparators

BD809 (NPN), BD810 (PNP) Plastic High Power Silicon Transistor 10 AMPERE POWER TRANSISTORS 80 VOLTS 90 WATTS

MUN5211T1 Series. NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network NPN SILICON BIAS RESISTOR TRANSISTORS

NSV2029M3T5G. PNP Silicon General Purpose Amplifier Transistor PNP GENERAL PURPOSE AMPLIFIER TRANSISTORS SURFACE MOUNT

NTLUS3A90PZ. Power MOSFET 20 V, 5.0 A, Cool Single P Channel, ESD, 1.6x1.6x0.55 mm UDFN Package

NVD5117PLT4G. Power MOSFET 60 V, 16 m, 61 A, Single P Channel

NTS4172NT1G. Power MOSFET. 30 V, 1.7 A, Single N Channel, SC 70. Low On Resistance Low Gate Threshold Voltage Halide Free This is a Pb Free Device

MMUN2111LT1 Series. Bias Resistor Transistors. PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network

NSR0340V2T1/D. Schottky Barrier Diode 40 VOLT SCHOTTKY BARRIER DIODE

NCP5360A. Integrated Driver and MOSFET

P1P Portable Gaming Audio/Video Multimedia. MARKING DIAGRAM. Features

NUP4302MR6T1G. Schottky Diode Array for Four Data Line ESD Protection

NTLUF4189NZ Power MOSFET and Schottky Diode

NTK3043N. Power MOSFET. 20 V, 285 ma, N Channel with ESD Protection, SOT 723

PIN CONNECTIONS MAXIMUM RATINGS (T J = 25 C unless otherwise noted) SC 75 (3 Leads) Parameter Symbol Value Unit Drain to Source Voltage V DSS 30 V

NVD5865NL. Power MOSFET 60 V, 46 A, 16 m, Single N Channel

NSVEMD4DXV6T5G. Dual Bias Resistor Transistors. NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network

Transcription:

. V, 106.25 MHz / 212.5 MHz LVPECL Clock Oscillator The NBXBA012 dual frequency crystal oscillator (XO) is designed to meet today s requirements for. V LVPECL clock generation applications. The device uses a high Q fundamental crystal and Phase Lock Loop (PLL) multiplier to provide selectable 106.25 MHz or 212.5 MHz, ultra low jitter and phase noise LVPECL differential output. This device is a member of ON Semiconductor s PureEdge clock family that provides accurate and precision clock solutions. Available in 5 mm x 7 mm SM (CLCC) package on 16 mm tape and reel in quantities of 1,000. Features LVPECL ifferential Output Uses High Q Fundamental Mode Crystal and PLL Multiplier Ultra Low Jitter and Phase Noise 0.4 ps (12 khz 20 MHz) Selectable Output Frequency 106.25 MHz (default)/ 212.5 MHz Total Frequency Stability ±50 PPM Hermetically Sealed Ceramic SM Package RoHS Compliant Operating Range. V ±10% This is a Pb Free evice Applications 1X and 2X Fiber Channel Host Bus Adapter V 6 5 4 6 PIN CLCC LN SUFFIX CASE 848AB MARKING IAGRAM NBXBA012 106.25/212.5 AAWLYYWWG NBXBA012 = NBXBA012 (±50 PPM) 106.25/212.5 = Output Frequency (MHz) AA = Assembly Location WL = Wafer Lot YY = Year WW = Work Week G = Pb Free Package ORERING INFORMATION evice Package Shipping NBXBA012LN1TAG NBXBA012LNHTAG CLCC 6 1000/Tape & Reel (Pb Free) CLCC 6 (Pb Free) 100/Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BR8011/. Crystal PLL Clock Multiplier 1 OE 2 GN Figure 1. Simplified Logic iagram Semiconductor Components Industries, LLC, 2009 October, 2009 Rev. 5 1 Publication Order Number: NBXBA012/

OE 1 6 V 2 5 GN 4 Figure 2. Pin Connections (Top View) Table 1. PIN ESCRIPTION Pin No. Symbol I/O escription 1 OE LVTTL/LVCMOS Control Input Output Enable Pin. When left floating pin defaults to logic HIGH and output is active. See OE pin description Table 2. 2 LVTTL/LVCMOS Control Input Output Frequency Select Pin. Pin will default to logic HIGH when left open. See Output Frequency Select pin description Table. GN Power Supply Ground 0 V. 4 LVPECL Output Non Inverted Clock Output. Typically loaded with 50 receiver termination resistor to V TT = V 2 V. 5 LVPECL Output Non Inverted Clock Output. Typically loaded with 50 receiver termination resistor to V TT = V 2 V. 6 V Power Supply Positive power supply voltage. Voltage should not exceed. V ±10%. Table 2. OUTPUT ENABLE TRI STATE FUNCTION OE Pin Output Pins Open Active HIGH Level Active LOW Level High Z Table. OUTPUT FREQUENCY SELECT Pin Open (pin will float high) Output Frequency (MHz) 106.25 HIGH Level 106.25 LOW Level 212.5 Table 4. ATTRIBUTES Characteristic Input efault State Resistor ES Protection Human Body Model Machine Model Value 170 k 2 kv 200 V Meets or Exceeds JEEC Standard EIA/JES78 IC Latchup Test 1. For additional Moisture Sensitivity information, refer to Application Note AN800/. Table 5. MAXIMUM RATINGS Symbol Parameter Condition 1 Condition 2 Rating Units V Positive Power Supply GN = 0 V 4.6 V I out LVPECL Output Current Continuous Surge T A Operating Temperature Range 40 to +85 C T stg Storage Temperature Range 55 to +120 C T sol Wave Solder See Figure 8 260 C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 25 50 ma 2

Table 6. C CHARACTERISTICS (V =. V ± 10%, GN = 0 V, T A = 40 C to +85 C) Symbol Characteristic Conditions Min. Typ. Max. Units I Power Supply Current (Note 2) 82 100 ma V IH OE and Input HIGH Voltage 2000 V mv V IL OE and Input LOW Voltage GN 00 800 mv I IH Input HIGH Current OE I IL Input LOW Current OE V OH Output HIGH Voltage (Note 2) V OL Output LOW Voltage (Note 2) V =. V V =. V V 1145 2155 V 1945 155 V 895 2405 V 1600 1700 V OUTPP Output Voltage Amplitude (Note 2) 700 mv NOTE: evice will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit board with maintained transverse airflow greater than 500 Ifpm. Electrical parameters are guaranteed only over the declared operating temperature range. Functional operation of the device exceeding these conditions is not implied. evice specification limit values are applied individually under normal operating conditions and not valid simultaneously. 2. Measurement taken with outputs terminated with 50 ohm to V 2 V. Table 7. AC CHARACTERISTICS (V =. V ± 10%, GN = 0 V, T A = 40 C to +85 C) Symbol Characteristic Conditions Min. Typ. Max. Units f OUT Output Clock Frequency = HIGH 106.25 MHz = LOW 212.5 f Frequency Stability NBXBA012 (Note 4) ±50 ppm NOISE Phase Noise Performance 100 Hz of Carrier 108/ 101 dbc/hz f out = 106.25 MHz/212.5 MHz 1 khz of Carrier 126/ 120 dbc/hz (See Figures and 4) 10 khz of Carrier 1/ 126 dbc/hz 100 khz of Carrier 1/ 127 dbc/hz 1 MHz of Carrier 140/ 1 dbc/hz 10 MHz of Carrier 162/ 160 dbc/hz t jit ( ) RMS Phase Jitter 12 khz to 20 MHz 0.4 0.9 ps t jitter Cycle to Cycle, RMS 1000 Cycles 2 8 ps Cycle to Cycle, Peak to Peak 1000 Cycles 12 0 ps Period, RMS 10,000 Cycles 1 4 ps Period, Peak to Peak 10,000 Cycles 8 20 ps t OE/O Output Enable/isable Time 200 ns t UTY_CYCLE Output Clock uty Cycle (Measured at Cross Point) A A mv mv 48 50 52 % t R Output Rise Time (20% and 80%) (See Figures 5 and 6) 250 400 ps t F Output Fall Time (80% and 20%) (See Figures 5 and 6) 250 400 ps t start Start up Time 1 5 ms Aging 1 st Year ppm Every Year After 1 st 1 ppm NOTE: evice will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit board with maintained transverse airflow greater than 500 Ifpm. Electrical parameters are guaranteed only over the declared operating temperature range. Functional operation of the device exceeding these conditions is not implied. evice specification limit values are applied individually under normal operating conditions and not valid simultaneously.. Measurement taken with outputs terminated with 50 ohm to V 2 V. See Figure 7. 4. Parameter guarantees 10 years of aging. Includes initial stability at 25 C, shock, vibration, and first year aging.

Table 8. RELIABILITY COMPLIANCE Parameter Standard Method Shock MIL ST 8, Method 2002, Condition B Solderability MIL ST 8, Method 200 Vibration MIL ST 8, Method 2007, Condition A Solvent Resistance MIL ST 202, Method 215 Thermal Shock Environment MIL ST 8, Method 1011, Condition A Moisture Level Sensitivity Environment MSL1 260 C per IPC/JEEC J ST 020 ÁÁÁÁÁ Figure. Typical Phase Noise Plot @ 106.25 MHz Figure 4. Typical Phase Noise Plot @ 212.5 MHz Figure 5. Typical Output Waveform @ 106.25 MHz Figure 6. Typical Output Waveform @ 212.5 MHz 4

NBXBA012 river evice Z o = 50 Z o = 50 Receiver evice 50 50 V TT V TT = V 2.0 V Figure 7. Typical Termination for Output river and evice Evaluation (See Application Note AN8020/ Termination of ECL Logic evices.) Temperature ( C) 260 217 temp. 260 C 20 40 sec. max. peak C/sec. max. 6 C/sec. max. 175 150 pre heat ramp up cooling reflow Time 60 180 sec. 60 150 sec. Figure 8. Recommended Reflow Soldering Profile 5

PACKAGE IMENSIONS 6 PIN CLCC, 7x5, 2.54P CASE 848AB 01 ISSUE C 4X 0.15 C 1 A B NOTES: 1. IMENSIONING AN TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING IMENSION: MILLIMETERS. TERMINAL 1 INICATOR 0.10 C A1 E2 A 2 TOP VIEW SIE VIEW H E1 A2 A E C SEATING PLANE MILLIMETERS IM MIN NOM MAX A 1.70 1.80 1.90 A1 0.70 REF A2 0.6 REF A 0.08 0.10 0.12 b 1.0 1.40 1.50 7.00 BSC 1 6.17 6.20 6.2 2 6.66 6.81 6.96 5.08 BSC E 5.00 BSC E1 4.7 4.40 4.4 E2 4.65 4.80 4.95 E.49 BSC e 2.54 BSC L 1.17 1.27 1.7 R 0.70 REF SOLERING FOOTPRINT* 1 2 e R E 6X 1.50 5.06 0.10 C A B 0.05 C 6X b 6 5 4 BOTTOM VIEW 6X L 2.54 PITCH 6X 1.50 IMENSION: MILLIMETERS *For additional information on our Pb Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLERRM/. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORERING INFORMATION LITERATURE FULFILLMENT: Literature istribution Center for ON Semiconductor P.O. Box 516, enver, Colorado 80217 USA Phone: 0 675 2175 or 800 44 860 Toll Free USA/Canada Fax: 0 675 2176 or 800 44 867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800 282 9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 790 2910 Japan Customer Focus Center Phone: 81 577 850 6 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative NBXBA012/