3V Complementary MOSFET General Description AO463 uses advanced trench technology to provide excellent R DS(ON) and low gate charge. This complementary N and P channel MOSFET configuration is ideal for low Input Voltage inverter applications. Product Summary NChannel PChannel V DS = 3V 3V I D = 7A (V GS =V) 5A (V GS =V) R DS(ON) R DS(ON) < 3mΩ (V GS =V) < 48mΩ (V GS =V) < 8mΩ (V GS =4.5V) < 57mΩ (V GS =4.5V) < 36mΩ (V GS =.5V) < 78mΩ (V GS =.5V) % UIS Tested % UIS Tested % R g Tested % R g Tested Top View SOIC8 Bottom View D D Top View Pin S G S G 8 7 3 6 4 5 Orderable Part Number Package Type Form Minimum Order Quantity AO463 SO8 Tape & Reel 3 D D D D G S Nchannel G S Pchannel Absolute Maximum Ratings T A = unless otherwise noted Parameter DrainSource Voltage Symbol V DS Max Nchannel 3 Max Pchannel 3 GateSource Voltage ± ± Continuous Drain T A = Current T A =7 C Pulsed Drain Current C Avalanche Current C Avalanche energy V DS Spike L=.mH µs C V GS I DM I AS E AS V SPIKE 5.6 4 3 5 4 8 36 36 T A = P Power Dissipation B D T A =7 C.3 Junction and Storage Temperature Range T J, T STG 55 to 5 I D 7 5 6 Units V V A A mj V W C Thermal Characteristics Parameter Symbol Typ Maximum JunctiontoAmbient A t s 48 Maximum JunctiontoAmbient A D R θja SteadyState 74 Maximum JunctiontoLead SteadyState 3 R θjl Max 6.5 9 4 Units C/W C/W C/W Rev..: Nov 5 www.aosmd.com Page of 9
NChannel Electrical Characteristics (T J = unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BV DSS DrainSource Breakdown Voltage I D =5µA, V GS =V 3 V I DSS Zero Gate Voltage Drain Current V DS =3V, V GS =V T J =55 C 5 µa I GSS GateBody leakage current V DS =V, V GS =±V ± na V GS(th) Gate Threshold Voltage V DS =V GS, I D =5µA.65.5.45 V R DS(ON) V GS =V, I D =7A 7.8 3 mω T J = 8 4 Static DrainSource OnResistance V GS =4.5V, I D =6A 9 8 mω V GS =.5V, I D =5A 4 36 mω g FS Forward Transconductance V DS =5V, I D =7A 35 S V SD Diode Forward Voltage I S =A, V GS =V.7 V I S Maximum BodyDiode Continuous Current.5 A DYNAMIC PARAMETERS C iss Input Capacitance 67 pf C oss Output Capacitance V GS =V, V DS =5V, f=mhz 75 pf C rss Reverse Transfer Capacitance 45 pf R g Gate resistance f=mhz.5 3 4.5 Ω SWITCHING PARAMETERS Q g (V) Total Gate Charge 3 nc Q g (4.5V) Total Gate Charge 6 nc V GS =V, V DS =5V, I D =7A Q gs Gate Source Charge.3 nc Q gd Gate Drain Charge.8 nc t D(on) TurnOn DelayTime 3 ns t r TurnOn Rise Time V GS =V, V DS =5V, R L =.Ω,.5 ns t D(off) TurnOff DelayTime R GEN =3Ω 5 ns t f TurnOff Fall Time 4 ns t rr Body Diode Reverse Recovery Time I F =7A, di/dt=5a/µs 6.5 ns Q rr Body Diode Reverse Recovery Charge I F =7A, di/dt=5a/µs 7.5 nc A. The value of R θja is measured with the device mounted on in FR4 board with oz. Copper, in a still air environment with T A =. The value in any given application depends on the user's specific board design. B. The power dissipation P D is based on T J(MAX) =5 C, using s junctiontoambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature T J(MAX) =5 C. Ratings are based on low frequency and duty cycles to keep initialt J =. D. The R θja is the sum of the thermal impedance from junction to lead R θjl and lead to ambient. E. The static characteristics in Figures to 6 are obtained using <3µs pulses, duty cycle.5% max. F. These curves are based on the junctiontoambient thermal impedance which is measured with the device mounted on in FR4 board with oz. Copper, assuming a maximum junction temperature of T J(MAX) =5 C. The SOA curve provides a single pulse rating. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev..: Nov 5 www.aosmd.com Page of 9
NChannel: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 4 V 3V 5 V DS =5V 3 4.5V 4.5V 9 I D (A) 6 I D (A) 6 8 V GS =V 3 3 4 5 3 V DS (Volts) Figure : OnRegion Characteristics.5.5.5 3.8 V GS (Volts) Figure : Transfer Characteristics R DS(ON) (mω) 6 8 4 V GS =.5V V GS =4.5V V GS =V Normalized OnResistance.6.4. V GS =4.5V I D =6A V GS =.5V I D =5A V GS =V I D =7A 4 8 6 I D (A) Figure 3: OnResistance vs. Drain Current and Gate Voltage.8 5 5 75 5 5 75 Temperature ( C) Figure 4: OnResistance vs. Junction Temperature 5 I D =7A.E 4.E R DS(ON) (mω) 34 6 8 I S (A).E.E.E3.E4 4 6 8 V GS (Volts) Figure 5: OnResistance vs. GateSource Voltage.E5...4.6.8. V SD (Volts) Figure 6: BodyDiode Characteristics Rev..: Nov 5 www.aosmd.com Page 3 of 9
NChannel: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 8 V DS =5V I D =7A 8 C iss V GS (Volts) 6 4 Capacitance (pf) 6 4 C rss C oss 3 6 9 5 Q g (nc) Figure 7: GateCharge Characteristics 5 5 5 3 V DS (Volts) Figure 8: Capacitance Characteristics I D (Amps).... R DS(ON) limited T J(Max) =5 C T A = DC µs µs ms ms s Power (W) T J(Max) =5 C T A =... V DS (Volts) V GS > or equal to.5v Figure 9: Maximum Forward Biased Safe Operating Area (Note F) E5.. Pulse Width (s) Figure : Single Pulse Power Rating Junctionto Ambient (Note F) Z θja Normalized Transient Thermal Resistance.. D=T on /T T J,PK =T A P DM.Z θja.r θja R θja =9 C/W Single Pulse In descending order D=.5,.3,.,.5,.,., single pulse T. E5.... Pulse Width (s) Figure : Normalized Maximum Transient Thermal Impedance (Note F) P DM T on Rev..: Nov 5 www.aosmd.com Page 4 of 9
Figure Gate A: Charge Gate Charge Test Test Circuit Circuit & Waveform & Waveforms Qg V Qgs Qgd Ig Figure B: Resistive Resistive Switching Switching Test Test Circuit Circuit & Waveforms Waveforms RL Charge Rg 9% % td(on) t r t d(off) t f t on t off Figure C: Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L E = / LI AR AR BV DSS Rg Id Id I AR Figure Diode D: Recovery Diode Recovery Test Circuit Test Circuit & Waveforms & Waveforms Q = Idt rr Ig Isd L Isd I F di/dt I RM t rr Rev..: Nov 5 www.aosmd.com Page 5 of 9
PChannel Electrical Characteristics (T J = unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BV DSS DrainSource Breakdown Voltage I D =5µA, V GS =V 3 V I DSS Zero Gate Voltage Drain Current V DS =3V, V GS =V T J =55 C 5 µa I GSS GateBody leakage current V DS =V, V GS =±V ± na V GS(th) Gate Threshold Voltage V DS =V GS, I D =5µA.5.9.3 V R DS(ON) V GS =V, I D =5A 4 48 mω T J = 48 6 Static DrainSource OnResistance V GS =4.5V, I D =3.5A 45 57 mω V GS =.5V, I D =.5A 6 78 mω g FS Forward Transconductance V DS =5V, I D =5A 8 S V SD Diode Forward Voltage I S =A, V GS =V.7 V I S Maximum BodyDiode Continuous Current.5 A DYNAMIC PARAMETERS C iss Input Capacitance 7 pf C oss Output Capacitance V GS =V, V DS =5V, f=mhz 8 pf C rss Reverse Transfer Capacitance 6 pf R g Gate resistance f=mhz 4 8 Ω SWITCHING PARAMETERS Q g (V) Total Gate Charge 4 5 nc Q g (4.5V) Total Gate Charge 7 5 nc V GS =V, V DS =5V, I D =5A Q gs Gate Source Charge.5 nc Q gd Gate Drain Charge.5 nc t D(on) TurnOn DelayTime 6.5 ns t r TurnOn Rise Time V GS =V, V DS =5V, R L =3Ω, 3.5 ns t D(off) TurnOff DelayTime R GEN =3Ω 4 ns t f TurnOff Fall Time 9 ns t rr Body Diode Reverse Recovery Time I F =5A, di/dt=5a/µs 5 ns Q rr Body Diode Reverse Recovery Charge I F =5A, di/dt=5a/µs 4 nc A. The value of R θja is measured with the device mounted on in FR4 board with oz. Copper, in a still air environment with T A =. The value in any given application depends on the user's specific board design. B. The power dissipation P D is based on T J(MAX) =5 C, using s junctiontoambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature T J(MAX) =5 C. Ratings are based on low frequency and duty cycles to keep initialt J =. D. The R θja is the sum of the thermal impedance from junction to lead R θjl and lead to ambient. E. The static characteristics in Figures to 6 are obtained using <3µs pulses, duty cycle.5% max. F. These curves are based on the junctiontoambient thermal impedance which is measured with the device mounted on in FR4 board with oz. Copper, assuming a maximum junction temperature of T J(MAX) =5 C. The SOA curve provides a single pulse rating. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev..: Nov 5 www.aosmd.com Page 6 of 9
PChannel: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS V 4.5V V DS =5V 5 3V.5V 5 I D (A) I D (A) 5 V GS =V 5 3 4 5 8 V DS (Volts) Figure : OnRegion Characteristics.5.5.5 3.8 V GS (Volts) Figure : Transfer Characteristics R DS(ON) (mω) 7 6 5 4 V GS =.5V V GS =4.5V V GS =V Normalized OnResistance.6.4. V GS =V I D =5A V GS =4.5V I D =3.5A V GS =.5V I D =.5A 3 4 6 8 I D (A) Figure 3: OnResistance vs. Drain Current and Gate Voltage.8 5 5 75 5 5 75 Temperature ( C) Figure 4: OnResistance vs. Junction Temperature I D =5A.E.E.E R DS(ON) (mω) 8 6 I S (A).E.E 4.E3.E4 4 6 8 V GS (Volts) Figure 5: OnResistance vs. GateSource Voltage.E5...4.6.8.. V SD (Volts) Figure 6: BodyDiode Characteristics Rev..: Nov 5 www.aosmd.com Page 7 of 9
PChannel: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 8 V DS =5V I D =5A 8 V GS (Volts) 6 4 Capacitance (pf) 6 4 C iss C oss 3 6 9 5 Q g (nc) Figure 7: GateCharge Characteristics C rss 6 8 4 3 V DS (Volts) Figure 8: Capacitance Characteristics I D (Amps).... R DS(ON) limited T J(Max) =5 C T A = DC µs µs ms ms s Power (W) T J(Max) =5 C T A =... V DS (Volts) V GS <or equal to.5v Figure 9: Maximum Forward Biased Safe Operating Area (Note F) E5.. Pulse Width (s) Figure : Single Pulse Power Rating Junctionto Ambient (Note F) Z θja Normalized Transient Thermal Resistance.. D=T on /T T J,PK =T A P DM.Z θja.r θja R θja =9 C/W Single Pulse In descending order D=.5,.3,.,.5,.,., single pulse. E5.... Pulse Width (s) Figure : Normalized Maximum Transient Thermal Impedance (Note F) P DM T on T Rev..: Nov 5 www.aosmd.com Page 8 of 9
Gate Charge Test Circuit & Waveform Qg V Qgs Qgd Ig Charge RL Resistive Switching Test Circuit & Waveforms ton toff td(on) tr td(off) tf Rg 9% % Id L Unclamped Inductive Switching (UIS) Test Circuit & Waveforms E = / LI AR AR Rg Id BV DSS I AR Diode Recovery Test Circuit & Waveforms Q = Idt rr Ig Isd L Isd I F di/dt I RM t rr Rev..: Nov 5 www.aosmd.com Page 9 of 9