VS-ETX506S-M3, VS-ETX506--M3 Hyperfast Rectifier, 5 FRED Pt FETURES TO-263 (D 2 PK) ase cathode 2 TO-262 2 Hyperfast recovery time, extremely low Q rr Low forward voltage drop 75 C operating junction temperature Low leakage current Designed and qualified according to JEDEC -JESD 47 Material categorization: for definitions of compliance please see www.vishay.com/doc?9992 3 3 N/C node N/C node VS-ETX506S-M3 VS-ETX506--M3 PRODUCT SUMMRY Package TO-263 (D 2 PK), TO-262 I F(V) 5 V R 600 V V F at I F.55 V t rr (typ.) 8 ns T J max. 75 C Diode variation Single die DESCRIPTION / PPLICTIONS State of the art hyperfast recovery rectifiers designed with optimized performance of forward voltage drop, hyperfast recover time, and soft recovery. The planar structure and the platinum doped life time control guarantee the best overall performance, ruggedness and reliability characteristics. These devices are intended for use in PFC oost stage in the C/DC section of SMPS, inverters or as freewheeling diodes. The extremely optimized stored charge and low recovery current minimize the switching losses and reduce over dissipation in the switching element and snubbers. SOLUTE MXIMUM RTINGS PRMETER SYMOL TEST CONDITIONS MX. UNITS Repetitive peak reverse voltage V RRM 600 V verage rectified forward current I F(V) T C = 27 C 5 Non-repetitive peak surge current I FSM T C = 25 C 20 Operating junction and storage temperatures T J, T Stg -65 to +75 C ELECTRICL SPECIFICTIONS (T J = 25 C unless otherwise specified) PRMETER SYMOL TEST CONDITIONS MIN. TYP. MX. UNITS reakdown voltage, blocking voltage V R, V R I R = 0 μ 600 - - I F = 5-2.5 3.4 Forward voltage V F I F = 5, T J = 50 C -.55 2 V R = V R rated - 0.02 36 Reverse leakage current I R T J = 50 C, V R = V R rated - 40 250 μ Junction capacitance C T V R = 600 V - 2 - pf Series inductance L S Measured lead to lead 5 mm from package body - 8.0 - nh V Revision: 09-Jul-5 Document Number: 93594 For technical questions within your region: Diodesmericas@vishay.com, Diodessia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUJECT TO CHNGE WITHOUT NOTICE. THE PRODUCTS DESCRIED HEREIN ND THIS DOCUMENT RE SUJECT TO SPECIFIC DISCLIMERS, SET FORTH T www.vishay.com/doc?900
VS-ETX506S-M3, VS-ETX506--M3 DYNMIC RECOVERY CHRCTERISTICS (T J = 25 C unless otherwise specified) PRMETER SYMOL TEST CONDITIONS MIN. TYP. MX. UNITS I F =, di F /dt = 0 /μs, V R = 30 V - 7 23 Reverse recovery time t rr I F = 5, di F /dt = 0 /μs, V R = 30 V - 8 30 T J = 25 C - 20 - ns T J = 25 C - 45 - Peak recovery current I RRM T J = 25 C I F = 5-2.7 - di F /dt = 200 /μs T J = 25 C V R = 390 V - 5.5 - T J = 25 C - 26 - Reverse recovery charge Q rr T J = 25 C - 30 - nc Reverse recovery time t rr I F = 5-32 - ns Peak recovery current I RRM T J = 25 C di F /dt = 800 /μs - 7 - Reverse recovery charge Q rr V R = 390 V - 290 - nc THERML - MECHNICL SPECIFICTIONS PRMETER SYMOL TEST CONDITIONS MIN. TYP. MX. UNITS Maximum junction and storage temperature range T J, T Stg -65-75 C Thermal resistance, junction to case R thjc -.3.5 C/W Thermal resistance, junction to ambient R thj Typical socket mount - - 70 Thermal resistance, case to heatsink Weight Mounting torque Marking device R thcs Mounting surface, flat, smooth and greased Case style D 2 PK Case style TO-262-0.5 - - 2.0 - g - 0.07 - oz. 6 (5) - 2 () ETX506S ETX506- kgf cm (lbf in) Instantaneous Forward Current () I F - 0 T J = 75 C T J = 25 C T J = 50 C 0.5.0.5 2.0 2.5 3.0 3.5 4.0 Reverse Current - I R (μ) 00 0 0. 0.0 75 C 50 C 25 C 0 C 75 C 50 C 25 C 0.00 0 200 300 400 500 600 V FM - Forward Voltage Drop (V) Fig. - Typical Forward Voltage Drop Characteristics Reverse Voltage - V R (V) Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage Revision: 09-Jul-5 2 Document Number: 93594 For technical questions within your region: Diodesmericas@vishay.com, Diodessia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUJECT TO CHNGE WITHOUT NOTICE. THE PRODUCTS DESCRIED HEREIN ND THIS DOCUMENT RE SUJECT TO SPECIFIC DISCLIMERS, SET FORTH T www.vishay.com/doc?900
VS-ETX506S-M3, VS-ETX506--M3 0 Junction Capacitance - C T (pf) 0 0 200 300 400 500 600 Reverse Voltage - V R (V) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage Z thjc - Thermal Impedance ( C/W) 0. 0.0 D = 0.5 D = 0.2 D = 0. D = 0.05 D = 0.02 D = 0.0 Single Pulse (Thermal Resistance) E-05 E-04 E-03 E-02 E-0 E+00 t - Rectangular Pulse Duration (s) Fig. 4 - Max. Thermal Impedance Z thjc Characteristics 80 40 70 35 RMS Limit llowable Case Temperature ( C) 60 50 40 30 20 DC verage Power Loss (W) 30 25 20 5 5 D = 0.0 D = 0.02 D = 0.05 D = 0. D = 0.2 D = 0.5 DC 0 0 2 4 6 8 2 4 6 8 20 22 0 0 2 4 6 8 2 4 6 8 20 22 verage Forward Current - I F(V) () I F(V) - verage Forward Current () Fig. 5 - Maximum llowable Case Temperature vs. verage Forward Current Fig. 6 - Forward Power Loss Characteristics Revision: 09-Jul-5 3 Document Number: 93594 For technical questions within your region: Diodesmericas@vishay.com, Diodessia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUJECT TO CHNGE WITHOUT NOTICE. THE PRODUCTS DESCRIED HEREIN ND THIS DOCUMENT RE SUJECT TO SPECIFIC DISCLIMERS, SET FORTH T www.vishay.com/doc?900
VS-ETX506S-M3, VS-ETX506--M3 55 350 50 45 40 I F = 5, 25 C 300 250 t rr (ns) 35 30 Q rr (nc) 200 50 I F = 5, 25 C 25 I F = 5, 25 C 20 5 typical value 0 00 0 I F = 5, 25 C 50 typical value 0 0 00 di F dt (/μs) di F dt (/μs) Fig. 7 - Typical Reverse Recovery vs. di F /dt Fig. 8 - Typical Stored Charge vs. di F /dt V R = 200 V 0.0 Ω L = 70 μh D.U.T. di F /dt adjust G D IRFP250 S Fig. 9 - Reverse Recovery Parameter Test Circuit (3) t rr 0 I F t a tb (2) I RRM (4) Q rr 0.5 I RRM di (rec)m /dt (5) 0.75 I RRM () di F /dt () di F /dt - rate of change of current through zero crossing (2) I RRM - peak reverse recovery current (3) t rr - reverse recovery time measured from zero crossing point of negative going I F to point where a line passing through 0.75 I RRM and 0.50 I RRM extrapolated to zero current. (4) Q rr - area under curve defined by t rr and I RRM t rr x I Q RRM rr = 2 (5) di (rec)m /dt - peak rate of change of current during t b portion of t rr Fig. - Reverse Recovery Waveform and Definitions Revision: 09-Jul-5 4 Document Number: 93594 For technical questions within your region: Diodesmericas@vishay.com, Diodessia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUJECT TO CHNGE WITHOUT NOTICE. THE PRODUCTS DESCRIED HEREIN ND THIS DOCUMENT RE SUJECT TO SPECIFIC DISCLIMERS, SET FORTH T www.vishay.com/doc?900
VS-ETX506S-M3, VS-ETX506--M3 ORDERING INFORMTION TLE Device code VS- E T X 5 06 S TRL -M3 2 3 4 5 6 7 8 9 - product 2 - Circuit configuration E = single diode 3 - T = TO-220 4 - X = hyperfast recovery time 5 - Current code (5 = 5 ) 6 - Voltage code (06 = 600 V) 7 - S = D 2 PK - - = TO-262 8 - None = tube (50 pieces) - TRL = tape and reel (left oriented, for D 2 PK package) - TRR = tape and reel (right oriented, for D 2 PK package) 9 - -M3 = halogen-free, RoHS-compliant and terminations lead (Pb)-free ORDERING INFORMTION (Example) PREFERRED P/N QUNTITY PER TUE MINIMUM ORDER QUNTITY PCKGING DESCRIPTION VS-ETX506S-M3 50 00 ntistatic plastic tube VS-ETX506--M3 50 00 ntistatic plastic tube VS-ETX506STRR-M3 800 800 3" diameter reel VS-ETX506STRL-M3 800 800 3" diameter reel LINKS TO RELTED DOCUMENTS Dimensions TO-263 (D 2 PK) www.vishay.com/doc?95046 TO-262 www.vishay.com/doc?9549 Part marking information TO-263 (D 2 PK) www.vishay.com/doc?95444 TO-262 www.vishay.com/doc?95443 Packaging information TO-263 (D 2 PK) www.vishay.com/doc?95032 Revision: 09-Jul-5 5 Document Number: 93594 For technical questions within your region: Diodesmericas@vishay.com, Diodessia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUJECT TO CHNGE WITHOUT NOTICE. THE PRODUCTS DESCRIED HEREIN ND THIS DOCUMENT RE SUJECT TO SPECIFIC DISCLIMERS, SET FORTH T www.vishay.com/doc?900
DIMENSIONS in millimeters and inches D 2 PK Outline Dimensions Conforms to JEDEC outline D 2 PK (SMD-220) (3) L (2)(3) E 4 c2 (E) (D) (3) Pad layout.00 MIN. (0.43) 9.65 MIN. (0.38) D L2 2 x e 2 3 H (2) 2 x b2 2 x b C Detail 0.0 M M c ± 0.004 M E View - H (3) 7.90 (0.70) 5.00 (0.625) 2.32 MIN. (0.08) Plating 2.64 (0.3) 2.4 (0.096) (4) b, b3 3.8 MIN. (0.5) ase Metal Gauge plane Lead tip 0 to 8 L3 L L4 Detail Rotated 90 CW Scale: 8: Seating plane (c) (b, b2) Section - and C - C Scale: None c (4) SYMOL MILLIMETERS INCHES MILLIMETERS INCHES NOTES SYMOL MIN. MX. MIN. MX. MIN. MX. MIN. MX. NOTES 4.06 4.83 0.60 0.90 D 6.86 8.00 0.270 0.35 3 0.00 0.254 0.000 0.0 E 9.65.67 0.380 0.420 2, 3 b 0.5 0.99 0.020 0.039 E 7.90 8.80 0.3 0.346 3 b 0.5 0.89 0.020 0.035 4 e 2.54 SC 0.0 SC b2.4.78 0.045 0.070 H 4.6 5.88 0.575 0.625 b3.4.73 0.045 0.068 4 L.78 2.79 0.070 0. c 0.38 0.74 0.05 0.029 L -.65-0.066 3 c 0.38 0.58 0.05 0.023 4 L2.27.78 0.050 0.070 c2.4.65 0.045 0.065 L3 0.25 SC 0.0 SC D 8.5 9.65 0.335 0.380 2 L4 4.78 5.28 0.88 0.208 Notes () Dimensioning and tolerancing per SME Y4.5 M-994 (2) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.27 mm (0.005") per side. These dimensions are measured at the outmost extremes of the plastic body (3) Thermal pad contour optional within dimension E, L, D and E (4) Dimension b and c apply to base metal only (5) Datum and to be determined at datum plane H (6) Controlling dimension: inch (7) Outline conforms to JEDEC outline TO-263 Revision: 08-Jul-5 Document Number: 95046 For technical questions within your region: Diodesmericas@vishay.com, Diodessia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUJECT TO CHNGE WITHOUT NOTICE. THE PRODUCTS DESCRIED HEREIN ND THIS DOCUMENT RE SUJECT TO SPECIFIC DISCLIMERS, SET FORTH T www.vishay.com/doc?900
Outline Dimensions TO-262 DIMENSIONS in millimeters and inches Modified JEDEC outline TO-262 (Datum ) (2) (3) E (3) L c2 E D Seating plane D(3) L2 2 C 3 C L (2) 2 x e 0.0 M M Lead tip 3 x b2 3 x b c Lead assignments Diodes. - node (two die)/open (one die) 2., 4. - Cathode 3. - node Plating c E Section - (4) ase b, b3 metal (b, b2) (3) c (4) Section - and C - C Scale: None SYMOL MILLIMETERS INCHES MIN. MX. MIN. MX. NOTES 4.06 4.83 0.60 0.90 2.03 3.02 0.080 0.9 b 0.5 0.99 0.020 0.039 b 0.5 0.89 0.020 0.035 4 b2.4.78 0.045 0.070 b3.4.73 0.045 0.068 4 c 0.38 0.74 0.05 0.029 c 0.38 0.58 0.05 0.023 4 c2.4.65 0.045 0.065 D 8.5 9.65 0.335 0.380 2 D 6.86 8.00 0.270 0.35 3 E 9.65.67 0.380 0.420 2, 3 E 7.90 8.80 0.3 0.346 3 e 2.54 SC 0.0 SC L 3.46 4. 0.530 0.555 L -.65-0.065 3 L2 3.56 3.7 0.40 0.46 Notes () Dimensioning and tolerancing as per SME Y4.5M-994 (2) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.27 mm (0.005") per side. These dimensions are measured at the outmost extremes of the plastic body (3) Thermal pad contour optional within dimension E, L, D and E (4) Dimension b and c apply to base metal only (5) Controlling dimension: inches (6) Outline conform to JEDEC TO-262 except (maximum), b (minimum) and D (minimum) where dimensions derived the actual package outline Document Number: 9549 For technical questions within your region, please contact one of the following: www.vishay.com Revision: 04-Oct- Diodesmericas@vishay.com, Diodessia@vishay.com, DiodesEurope@vishay.com
Legal Disclaimer Notice Vishay Disclaimer LL PRODUCT, PRODUCT SPECIFICTIONS ND DT RE SUJECT TO CHNGE WITHOUT NOTICE TO IMPROVE RELIILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, Vishay ), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. ll operating parameters, including typical parameters, must be validated for each customer application by the customer s technical experts. Product specifications do not expand or otherwise modify Vishay s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. 207 VISHY INTERTECHNOLOGY, INC. LL RIGHTS RESERVED Revision: 08-Feb-7 Document Number: 900