DISCRETE SEMICONDUCTORS DATA SHEET M3D176. 1N914; 1N914A; 1N914B High-speed diodes. Product specification Supersedes data of 1999 May 26.

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DISCRETE SEMICONDUCTORS DATA SHEET M3D176 Supersedes data of 1999 May 26 2003 Jun 06

FEATURES Hermetically sealed leaded glass SOD27 (DO-35) package High switching speed: max. 4 ns Continuous reverse voltage: max. 75 V Repetitive peak reverse voltage: max. 100 V Repetitive peak forward current: max. 225 ma. DESCRIPTION The 1N914, 1N914A and 1N914B are high-speed switching diodes fabricated in planar technology, and encapsulated in a hermetically sealed leaded glass SOD27 (DO-35) package. handbook, halfpage k a MAM246 APPLICATIONS High-speed switching. The diode is type branded. The marking band indicates the cathode. Fig.1 Simplified outline (SOD27; DO-35) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V RRM repetitive peak reverse voltage 100 V V R continuous reverse voltage 75 V I F continuous forward current see Fig.2; note 1 75 ma I FRM repetitive peak forward current 225 ma I FSM non-repetitive peak forward current square wave; T j =25 C prior to surge; see Fig.4 t=1µs 4 A t=1ms 1 A t=1s 0.5 A P tot total power dissipation T amb =25 C; note 1 250 mw T stg storage temperature 65 +200 C T j junction temperature 175 C Note 1. Device mounted on an FR4 printed-circuit board; lead length 10 mm. 2003 Jun 06 2

ELECTRICAL CHARACTERISTICS T j =25 C; unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V F forward voltage see Fig.3 1N914; 1N914A I F =10mA 1 V 1N914B I F = 5 ma 0.62 0.72 V 1N914B I F = 100 ma 1 V I R reverse current see Fig.5 V R =20V 25 na V R =75V 5 µa V R = 20 V; T j = 150 C 50 µa C d diode capacitance f = 1 MHz; V R = 0; see Fig.6 4 pf t rr reverse recovery time when switched from I F = 10 ma to I R = 10 ma; R L = 100 Ω; measured at I R = 1 ma; see Fig.7 8 ns when switched from I F = 10 ma to I R = 60 ma; R L = 100 Ω; measured at I R = 1 ma; see Fig.7 V fr forward recovery voltage when switched from I F =50mA; t r = 20 ns; see Fig.8 4 ns 2.5 V THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT R th j-tp thermal resistance from junction to tie-point lead length 10 mm 240 K/W R th j-a thermal resistance from junction to ambient lead length 10 mm; note 1 500 K/W Note 1. Device mounted on a printed-circuit board without metallization pad. 2003 Jun 06 3

GRAPHICAL DATA 100 MGD289 600 handbook, halfpage MBG464 I F (ma) I F (ma) 400 50 (1) (2) (3) 200 Fig.2 0 0 100 200 T amb ( o C) Device mounted on an FR4 printed-circuit board; lead length 10 mm. Maximum permissible continuous forward current as a function of ambient temperature. (1) T j = 175 C; typical values. (2) T j =25 C; typical values. (3) T j =25 C; maximum values. Fig.3 0 0 1 V 2 F (V) Forward current as a function of forward voltage. 10 2 handbook, full pagewidth MBG704 I FSM (A) 10 1 10 1 1 10 10 2 10 3 t p (µs) 10 4 Based on square wave currents. T j =25 C prior to surge. Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration. 2003 Jun 06 4

10 3 handbook, halfpage I R (µa) 10 2 MGD006 1.2 handbook, halfpage C d (pf) 1.0 MGD004 10 (1) (2) (3) 0.8 1 10 1 0.6 10 2 0 100 T j ( o C) 200 0.4 0 10 20 V R (V) (1) V R = 75 V; maximum values. (2) V R = 75 V; typical values. (3) V R = 20 V; typical values. f = 1 MHz; T j =25 C. Fig.5 Reverse current as a function of junction temperature. Fig.6 Diode capacitance as a function of reverse voltage; typical values. 2003 Jun 06 5

handbook, full pagewidth R S = 50 Ω I F D.U.T. SAMPLING OSCILLOSCOPE tr 10% t p t I F t rr t V = V R I F x R S R i = 50 Ω MGA881 V R 90% (1) input signal output signal (1) I R = 1 ma. Fig.7 Reverse recovery voltage test circuit and waveforms. I 1 k Ω 450 Ω I 90% V R = 50 S Ω D.U.T. OSCILLOSCOPE R i = 50 Ω Vfr 10% MGA882 t r t p t t input signal output signal Fig.8 Forward recovery voltage test circuit and waveforms. 2003 Jun 06 6

PACKAGE OUTLINE Hermetically sealed glass package; axial leaded; 2 leads SOD27 (1) b D L G 1 L DIMENSIONS (mm are the original dimensions) UNIT b max. D max. G 1 max. L min. 0 1 2 mm scale mm 0.56 1.85 4.25 25.4 Note 1. The marking band indicates the cathode. OUTLINE VERSION REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE SOD27 A24 DO-35 SC-40 97-06-09 2003 Jun 06 7

DATA SHEET STATUS LEVEL DATA SHEET STATUS (1) PRODUCT STATUS (2)(3) DEFINITION I Objective data Development This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. II Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. III Product data Production This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. 3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. DEFINITIONS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. DISCLAIMERS Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes Philips Semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. When the product is in full production (status Production ), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. 2003 Jun 06 8

NOTES 2003 Jun 06 9

NOTES 2003 Jun 06 10

NOTES 2003 Jun 06 11

a worldwide company Contact information For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825 For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com. Koninklijke Philips Electronics N.V. 2003 SCA75 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 613514/04/pp12 Date of release: 2003 Jun 06 Document order number: 9397 750 11511