TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-mos VII) TK10A60D

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TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-mos VII) TKAD TKAD Switching Regulator Applications Unit: mm Low drain-source ON-resistance: R DS (ON) =. Ω (typ.) High forward transfer admittance: Y fs =. S (typ.) Low leakage current: I DSS = μa (max) (V DS = V) Enhancement mode: V th =. to. V (V DS = V, I D = ma) Absolute Maximum Ratings (Ta = C) Characteristics Symbol Rating Unit Drain-source voltage V DSS V Gate-source voltage V GSS ± V Drain current DC (Note ) I D Pulse (Note ) I DP Drain power dissipation () P D W Single pulse avalanche energy (Note ) E AS mj Avalanche current I AR A Repetitive avalanche energy (Note ) E AR. mj Channel temperature T ch C Storage temperature range T stg - to C A JEDEC JEITA TOSHIBA : Gate : Drain : Source Weight :.7 g (typ.) SC-7 -UB Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ( Handling Precautions / Derating Concept and Methods ) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics Characteristics Symbol Max Unit Thermal resistance, channel to case R th (ch-c).7 C/W Thermal resistance, channel to ambient R th (ch-a). C/W Note : Ensure that the channel temperature does not exceed C. Note : V DD = 9 V, T ch = C (initial), L =. mh, R G = Ω, I AR = A Note : Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device. Handle with care. Start of commercial production - --

TKAD Electrical Characteristics (Ta = C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current I GSS V GS = ± V, V DS = V ± μa Drain cut-off current I DSS V DS = V, V GS = V μa Drain-source breakdown voltage V (BR) DSS I D = ma, V GS = V V Gate threshold voltage V th V DS = V, I D = ma.. V Drain-source ON-resistance R DS (ON) V GS = V, I D = A..7 Ω Forward transfer admittance Y fs V DS = V, I D = A.. S Input capacitance C iss Reverse transfer capacitance C rss V DS = V, V GS = V, f = MHz Output capacitance C oss Rise time t r V V GS I D = A V OUT V Turn-on time t on R L = Ω Switching time Ω Fall time t f V DD V Turn-off time t off Duty %, t w = μs Total gate charge Q g Gate-source charge Q gs V DD V, V GS = V, I D = A Gate-drain charge Q gd 9 pf ns nc Source-Drain Ratings and Characteristics (Ta = C) Characteristics Symbol Test Condition Min Typ. Max Unit Continuous drain reverse current (Note ) I DR A Pulse drain reverse current (Note ) I DRP A Forward voltage (diode) V DSF I DR = A, V GS = V.7 V Reverse recovery time t rr I DR = A, V GS = V, ns Reverse recovery charge Q rr di DR /dt = A/μs μc Marking Note : A line under a Lot No. identifies the indication of product Labels. KAD Part No. (or abbreviation code) Lot No. Note [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]] Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. The RoHS is the Directive //EU of the European Parliament and of the Council of June on the restriction of the use of certain hazardous substances in electrical and electronic equipment. --

TKAD I D V DS 7,... VGS =.V I D V DS 7. 7.7.. VGS = V DRAIN-SOURCE VOLTAGE V DS (V) DRAIN-SOURCE VOLTAGE V DS (V) I D V GS V DS V GS VDS = V Tc = C GATE-SOURCE VOLTAGE V GS (V) DRAIN-SOURCE VOLTAGE VDS (V) ID = A. GATE-SOURCE VOLTAGE V GS (V) FORWARD TRANSFER ADMITTANCE Yfs (S) Y fs I D VDS = V Tc = C.. DRAIN-SOURCE ON RESISTANCE RDS (ON) (Ω) R DS (ON) I D VGS = V, V.. DRAIN CURRENT I D (A) DRAIN CURRENT I D (A) --

TKAD DRAIN-SOURCE ON RESISTANCE RDS (ON) ( Ω)..... R DS (ON) Tc VGS = V ID=A A.A DRAIN REVERSE CURRENT IDR (A). I DR V DS VGS =, V....... CASE TEMPERATURE Tc ( C) DRAIN-SOURCE VOLTAGE V DS (V) CAPACITANCE V DS V th Tc CAPACITANCE C (pf) VGS = V f = MHz. Ciss Coss Crss GATE THRESHOLD VOLTAGE Vth (V) VDS = V ID = ma DRAIN-SOURCE VOLTAGE V DS (V) CASE TEMPERATURE Tc ( C) DRAIN POWER DISSIPATION PD (W) P D Tc DRAIN-SOURCE VOLTAGE VDS (V) VDS DYNAMIC INPUT / OUTPUT CHARACTERISTICS VDD = V VGS Common source ID= A Pulse test GATE-SOURCE VOLTAGE VGS (V) CASE TEMPERATURE Tc ( C) TOTAL GATE CHARGE Q g (nc) --

TKAD NORMALIZED TRANSIENT THERMAL IMPEDANCE rth (t)/rth (ch-c)..... μ. Duty=... SINGLE PULSE r th t w PDM μ m m m PULSE WIDTH t w (s) t T Duty = t/t Rth (ch-c) =.7 C/W SAFE OPERATING AREA E AS T ch ID max (pulsed) *. I D max (continuous) DC operation ms * μs * AVALANCHE ENERGY EAS (mj) 7. *: SINGLE NONREPETITIVE PULSE CURVES MUST BE DERATED LINEARLY WITH INCREASE IN VDSS max. TEMPERATURE. DRAIN-SOURCE VOLTAGE V DS (V) V V CHANNEL TEMPERATURE (INITIAL) T ch ( C) B VDSS I AR V DD V DS TEST CIRCUIT R G = Ω V DD = 9 V, L =.mh WAVEFORM = BVDSS ΕAS L I BVDSS VDD --

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