VS-HF15TB6PbF, VS-HF15TB6-N3 HEXFRED, Ultrafast Soft Recovery Diode, 15 FETURES Ultrafast and ultrasoft recovery TO-22C Base cathode 2 1 3 Cathode node PRODUCT SUMMRY Package TO-22C I F(V) 15 V R 6 V V F at I F 1.2 V t rr typ. 23 ns T J max. 15 C Diode variation Single die Very low I RRM and Q rr Designed and qualified according to JEDEC -JESD47 Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 BENEFITS Reduced RFI and EMI Reduced power loss in diode and switching transistor Higher frequency operation Reduced snubbing Reduced parts count vailable DESCRIPTION VS-HF15TB6... is a state of the art ultrafast recovery diode. Employing the latest in epitaxial construction and advanced processing techniques it features a superb combination of characteristics which result in performance which is unsurpassed by any rectifier previously available. With basic ratings of 6 V and 15 continuous current, the VS-HF15TB6... is especially well suited for use as the companion diode for IGBTs and MOSFETs. In addition to ultrafast recovery time, the HEXFRED product line features extremely low values of peak recovery current (I RRM ) and does not exhibit any tendency to snap-off during the t b portion of recovery. The HEXFRED features combine to offer designers a rectifier with lower noise and significantly lower switching losses in both the diode and the switching transistor. These HEXFRED advantages can help to significantly reduce snubbing, component count and heatsink sizes. The HEXFRED VS-HF15TB6... is ideally suited for applications in power supplies and power conversion systems (such as inverters), motor drives, and many other similar applications where high speed, high efficiency is needed. BSOLUTE MXIMUM RTINGS PRMETER SYMBOL TEST CONDITIONS VLUES UNITS Cathode to anode voltage V R 6 V Maximum continuous forward current I F T C = C 15 Single pulse forward current I FSM 15 Maximum repetitive forward current I FRM 6 T C = 25 C 74 Maximum power dissipation P D T C = C 29 W Operating junction and storage temperature range T J, T Stg -55 to +15 C Revision: -Jul-15 1 Document Number: 9453 For technical questions within your region: Diodesmericas@vishay.com, Diodessia@vishay.com, DiodesEurope@vishay.com RE SUBJECT TO SPECIFIC DISCLIMERS, SET FORTH T www.vishay.com/doc?9
VS-HF15TB6PbF, VS-HF15TB6-N3 ELECTRICL SPECIFICTIONS ( unless otherwise specified) Maximum forward voltage V FM PRMETER SYMBOL TEST CONDITIONS MIN. TYP. MX. UNITS Cathode to anode breakdown voltage V BR I R = μ 6 - - I F = 3 See fig. 1-1.5 2. I F = 15-1.3 1.7 V I F = 15, - 1.2 1.6 Maximum reverse V R = V R rated - 1. I RM See fig. 2 μ leakage current, V R =.8 x V R rated - 4 Junction capacitance C T See fig. 3-25 5 pf Series inductance L S Measured lead to lead 5 mm from package body - 8. - nh DYNMIC RECOVERY CHRCTERISTICS ( unless otherwise specified) PRMETER SYMBOL TEST CONDITIONS MIN. TYP. MX. UNITS Reverse recovery time See fig. 5 Peak recovery current See fig. 6 Reverse recovery charge See fig. 7 Peak rate of fall of recovery current during t b See fig. 8 t rr I F = 1., di F /dt = 2 /μs, V R = 3 V - 19 - t rr1-42 6 t rr2-74 12 I RRM1-4. 6. I RRM2 I F = 15-6.5 Q rr1 di F /dt = 2 /μs - 84 18 Q rr2-241 6 di (rec)m /dt1-188 - di (rec)m /dt2-16 - ns nc /μs THERML - MECHNICL SPECIFICTIONS PRMETER SYMBOL TEST CONDITIONS MIN. TYP. MX. UNITS Lead temperature T lead.63" from case (1.6 mm) for s - - 3 C Thermal resistance, junction to case R thjc - - 1.7 Thermal resistance, junction to ambient R thj Typical socket mount - - 8 K/W Weight Mounting torque - 2. - g -.7 - oz. Marking device Case style TO-22C HF15TB6 6. (5.) - 12 () kgf cm (lbf in) Revision: -Jul-15 2 Document Number: 9453 For technical questions within your region: Diodesmericas@vishay.com, Diodessia@vishay.com, DiodesEurope@vishay.com RE SUBJECT TO SPECIFIC DISCLIMERS, SET FORTH T www.vishay.com/doc?9
VS-HF15TB6PbF, VS-HF15TB6-N3 I F - Instantaneous Forward Current () T J = 15 C 1 1. 1.2 1.4 1.6 1.8 2. 2.2 2.4 I R - Reverse Current (µ) 1.1.1 T J = 15 C 2 3 4 5 6 V FM - Forward Voltage Drop (V) V R - Reverse Voltage (V) Fig. 1 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current Fig. 2 - Typical Reverse Current vs. Reverse Voltage C T - Junction Capacitance (pf) V R - Reverse Voltage (V) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage Z thjc - Thermal Response 1.1 D =.5 D =.2 D =. D =.5 D =.2 D =.1 Single pulse (thermal response).1.1.1.1.1.1 1 t 1 - Rectangular Pulse Duration (s) P DM Notes: 1. Duty factor D = t 1 /t 2 2. Peak T J = P DM x Z thjc + T C t 1 t 2 Fig. 4 - Maximum Thermal Impedance Z thjc Characteristics Revision: -Jul-15 3 Document Number: 9453 For technical questions within your region: Diodesmericas@vishay.com, Diodessia@vishay.com, DiodesEurope@vishay.com RE SUBJECT TO SPECIFIC DISCLIMERS, SET FORTH T www.vishay.com/doc?9
VS-HF15TB6PbF, VS-HF15TB6-N3 8 I F = 3 I F = 15 I F = 5 8 7 6 t rr (ns) 6 4 Q rr (nc) 5 4 3 I F = 3 I F = 15 I F = 5 2 di F /dt (/µs) Fig. 5 - Typical Reverse Recovery Time vs. di F /dt 2 di F /dt (/µs) Fig. 7 - Typical Stored Charge vs. di F /dt I rr () 25 2 15 I F = 3 I F = 15 I F = 5 di (rec)m /dt (/µs) I F = 3 I F = 15 I F = 5 5 di F /dt (/µs) Fig. 6 - Typical Recovery Current vs. di F /dt di F /dt (/µs) Fig. 8 - Typical di (rec)m /dt vs. di F /dt Revision: -Jul-15 4 Document Number: 9453 For technical questions within your region: Diodesmericas@vishay.com, Diodessia@vishay.com, DiodesEurope@vishay.com RE SUBJECT TO SPECIFIC DISCLIMERS, SET FORTH T www.vishay.com/doc?9
VS-HF15TB6PbF, VS-HF15TB6-N3 L = 7 μh.1 Ω di F /dt adjust G D IRFP25 D.U.T. S Fig. 9 - Reverse Recovery Parameter Test Circuit (3) t rr I F t a tb (2) I RRM (4) Q rr.5 I RRM di (rec)m /dt (5).75 I RRM (1) di F /dt (1) di F /dt - rate of change of current through zero crossing (2) I RRM - peak reverse recovery current (3) t rr - reverse recovery time measured from zero crossing point of negative going I F to point where a line passing through.75 I RRM and.5 I RRM extrapolated to zero current. (4) Q rr - area under curve defined by t rr and I RRM t rr x I Q RRM rr = 2 (5) di (rec)m /dt - peak rate of change of current during t b portion of t rr Fig. - Reverse Recovery Waveform and Definitions Revision: -Jul-15 5 Document Number: 9453 For technical questions within your region: Diodesmericas@vishay.com, Diodessia@vishay.com, DiodesEurope@vishay.com RE SUBJECT TO SPECIFIC DISCLIMERS, SET FORTH T www.vishay.com/doc?9
VS-HF15TB6PbF, VS-HF15TB6-N3 ORDERING INFORMTION TBLE Device code VS- HF 15 TB 6 PbF 1 2 3 4 5 6 7 1 - product 2 - HEXFRED family 3 - Electron irradiated 4 - Current rating (15 = 15 ) 45 - Package: 4 TB = TO-22C 6 7 - - Voltage rating (6 = 6 V) Environmental digit: PbF = lead (Pb)-free and RoHS-compliant -N3 = halogen-free, RoHS-compliant, and totally lead (Pb)-free ORDERING INFORMTION (Example) PREFERRED P/N QUNTITY PER T/R MINIMUM ORDER QUNTITY PCKGING DESCRIPTION VS-HF15TB6PbF 5 ntistatic plastic tube VS-HF15TB6-N3 5 ntistatic plastic tube Dimensions Part marking information LINKS TO RELTED DOCUMENTS TO-22CPbF TO-22C-N3 www.vishay.com/doc?95221 www.vishay.com/doc?95224 www.vishay.com/doc?9568 Revision: -Jul-15 6 Document Number: 9453 For technical questions within your region: Diodesmericas@vishay.com, Diodessia@vishay.com, DiodesEurope@vishay.com RE SUBJECT TO SPECIFIC DISCLIMERS, SET FORTH T www.vishay.com/doc?9
Outline Dimensions TO-22C DIMENSIONS in millimeters and inches (6) E E2 (7) Ø P.14 M B M B Seating plane 1 E Thermal pad 1 2 3 D D C C L1 (6) D Q D1 Detail B (6) H1 (7) H1 θ D2 (6) 2 x b2 2 x b Detail B L3 L4 1 3 2 L C E1 (6) Lead assignments Diodes 1 + 2 - Cathode 3 - node Lead tip e1.15 M B M c 2 View - Conforms to JEDEC outline TO-22C SYMBOL MILLIMETERS INCHES MILLIMETERS INCHES NOTES SYMBOL MIN. MX. MIN. MX. MIN. MX. MIN. MX. NOTES 4.25 4.65.167.183 E1 6.86 8.89.27.35 6 1 1.14 1.4.45.55 E2 -.76 -.3 7 2 2.56 2.92.1.115 e 2.41 2.67.95.5 b.69 1.1.27.4 e1 4.88 5.28.192.28 b1.38.97.15.38 4 H1 6.9 6.48.24.255 6, 7 b2 1.2 1.73.47.68 L 13.52 14.2.532.552 b3 1.14 1.73.45.68 4 L1 3.32 3.82.131.15 2 c.36.61.14.24 L3 1.78 2.13.7.84 c1.36.56.14.22 4 L4.76 1.27.3.5 2 D 14.85 15.25.585.6 3 Ø P 3.54 3.73.139.147 D1 8.38 9.2.33.355 Q 2.6 3..2.118 D2 11.68 12.88.46.57 6 9 to 93 9 to 93 E.11.51.398.414 3, 6 Notes (1) Dimensioning and tolerancing as per SME Y14.5M-1994 (2) Lead dimension and finish uncontrolled in L1 (3) Dimension D, D1 and E do not include mold flash. Mold flash shall not exceed.127 mm (.5") per side. These dimensions are measured at the outermost extremes of the plastic body (4) Dimension b1, b3 and c1 apply to base metal only (5) Controlling dimension: inches (6) Thermal pad contour optional within dimensions E, H1, D2 and E1 (7) Dimension E2 x H1 define a zone where stamping and singulation irregularities are allowed (8) Outline conforms to JEDEC TO-22, D2 (minimum) where dimensions are derived from the actual package outline Document Number: 95221 For technical questions within your region, please contact one of the following: www.vishay.com Revision: 7-Mar-11 Diodesmericas@vishay.com, Diodessia@vishay.com, DiodesEurope@vishay.com 1
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