TDA80 TV VERTICAL DEFLECTION OUTPUT CIRCUIT The functions incorporated are : POWER AMPLIFIER. FLYBACK GENERATOR REFERENCE VOLTAGE THERMAL PROTECTION DESCRIPTION The TDA80 is a monolithic integrated circuit in HEPTAWATT TM package. It is a high efficiency power booster for direct driving of vertical windings of TV yokes. It is intended for use in Colour and B & W television receivers as well as in monitors and displays. HEPTAWATT (Plastic Package) ORDER CODE : TDA80 PIN CONNECTIONS Tab connected to Pin REFERENCE VOLTAGE AND NON-INVERTING INPUT OUTPUT STAGE SUPPLY OUTPUT GROUND FLYBACK GENERATOR SUPPLY VOLTAGE INVERTING INPUT 80-0.EPS BLOCK DIAGRAM + REFERENCE VOLTAGE FLYBACK GENERATOR TDA80 P OWER AMPLIFIER THERMAL PROTECTION 80-0.EPS YOKE May 99 /
Q Q0 Q R D D R D Q Q Q9 D D R Q R Q R8 R9 Q Q8 Q9 Q R Q Q0 D9 D8 R0 Q Q Q8 R C Q C R Q R D Q D Q Q Q Q R Z Q R R9 R Z Q R R Q Q8 Q9 R8 R 80-0.EPS SCHEMATIC DIAGRAM TDA80 /
TDA80 ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit Supply Voltage (pin ) V V, V Flyback Peak Voltage 0 V V Voltage at Pin + Vs V, V Amplifier Input Voltage + Vs 0. V Io Output Peak Current (non repetitive, t = msec). A I o Output Peak Current at f = 0 or 0 Hz, t 0 µsec A Io Output Peak Current at f = 0 or 0 Hz, t > 0 µsec A I Pin DC Current at V <V 00 ma I Pin Peak to Peak Flyback Current at f= 0 or 0 Hz, t fly.msec A Ptot Total Power Dissipation at Tcase = 90 C 0 W T stg, T j Storage and Junction Temperature 0 to 0 C 80-0.TBL THERMAL DATA Symbol Parameter Value Unit R th j case Thermal Resistance Junction-case Max. C/W 80-0.TBL ELECTRICAL CHARACTERISTICS (refer to the test circuits, VS = V, Tamb = o C unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Unit Fig. I Pin Quiescent Current I =0,I =0 8 ma a I Pin Quiescent Current I = 0,I = 0 ma a I Amplifier Input Bias Current V = V 0. µa a V Reference Voltage. V a V Reference Voltage Drift versus Supply Voltage V s = to 0 V mv/v a VL Pin Saturation Voltage to GND I = 0mA V c V Quiescent Output Voltage Vs = V,Ra = 9kΩ 8 V d Vs = V,Ra = kω. V d VL Output Saturation Voltage to GND I =. A. V c I = 0. A 0. V c VH Output Saturation Voltage to Supply I =. A.. V b I= 0. A..8 V b Tj Junction Temperature for Thermal Shut Down 0 C 80-0.TBL /
TDA80 Figure a : Measurement of I, I,I,V, V/ VS Figure b : Measurement of VH I I V H 0kΩ V S : (a) I and I ; (b) I S a b I V 80-0.EPS V I 80-0.EPS Figure c : Measurement of VL, VL Figure d : Measurement of V I or I b S a kω V V V S : (a) VL ; (b) VL V L V L 80-0.EPS.kΩ R a 80-0.EPS Figure : AC Test Circuit N00 C 0.µF C 0µF D C 0µF t fly GND to V i RT * R 0kΩ.kΩ R TDA80 R C 0.µF R.Ω Iy R 0Ω Ly.mH Ry 9.Ω to V IN R.kΩ kω C.µF 8.kΩ C 00µF R Iy * Recommended for V noise filtering REF R Ω to 80-08.EPS /
TDA80 Figure : PC Board and Component layout of the Circuit of fig. ( : scale) C C C TDA80 D R R C R R R R R C R GND YOKE YOKE GND V IN ( V O ) 80-09.EPS COMPONENTS LIST FOR TYPICAL APPLICATIONS Component 0 TVC.9 Ω/0 mh.9 App 0 TVC 9. Ω/. mh. App 90 TVC Ω/0 mh 0.8 App RT 0. 0 kω R 0 kω R 0.. kω R 8 kω R 8.. kω R 0.8 Ω R 0 0 0 Ω R... Ω D N 00 N 00 N 00 C 0. 0. 0. µf C ei. 000/ V 0/ V 0/ V µf C ei. 0/ V 0/ V 0/ V µf C 0. 0. 0. µf C ei. 00/ V 00/ V 000/ V µf C ei../ V./ V 0/ V µf Unit 80-0.TBL /
TDA80 TYPICAL PERFORMANCES Parameter 0 TVC.9 Ω/0 mh 0 TVC 9. Ω/ mh 90 TVC Ω/0 mh Vs - Supply Voltage. V I s - Current 80 ma t fly - Flyback Time 0. 0. ms Ptot - Power Dissip....0 W Rth o-a - Heatsink C/W T amb 0 0 0 C Tj max 0 0 0 C T o 0 0 0 ms V I... V pp V... Vp Unit 80-0.TBL MOUNTING INSTRUCTIONS The power dissipated in the circuit must be removed by adding an external heatsink. Thanks to the HEPTAWATT TM package attaching the heatsink is very simple, a screw a compression spring (clip) being sufficient. Between the heatsink and the packageit is betterto inserta layer of silicon grease, to optimize the thermal contact ; no electrical isolation is needed between the two surfaces. Figure : Mounting Examples 80-0.EPS /
TDA80 PACKAGE MECHANICAL DATA : PINS - PLASTIC HEPTAWATT PM-HEPTV.EPS Dimensions Millimeters Inches Min. Typ. Max. Min. Typ. Max. A.8 0.89 C. 0.0 D..8 0.09 0.0 D.. 0.0 0.0 E 0. 0. 0.0 0.0 F 0. 08 0.0 0.0 F 0.9 0.0 G... 0.09 0.00 0.0 G.9.08. 0.9 0.00 0.0 G.9..8 0.9 0.00 0.0 H 0. 0.09 H 0.0 0. 0.9 0.09 L.9 0.8 L.9 0.8 L. 0.88 L. 0.89 L. 0.0 0.8 L..8 0.9 0. L. 0. 0.0 M.8 0.0 M.08 0.00 Dia...8 0. 0. HEPTV.TBL Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No licence is granted by implication or otherwise under anypatent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectronics. 99 SGS-THOMSON Microelectronics - All Rights Reserved Purchase of I C Components of SGS-THOMSON Microelectronics, conveys a license under the Philips I C Patent. Rights to use these components in a I C system, is granted provided that the system conforms to the I C Standard Specifications as defined by Philips. SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. /