TQP3M9035 High Linearity LNA Gain Block

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Applications Repeaters Mobile Infrastructure LTE / WCDMA / CDMA / GSM General Purpose Wireless TDD or FDD systems Product Features 2x2mm 8-lead DFN plastic package Functional Block Diagram 5-4 MHz.66 db Noise Figure @ 1.9 GHz 16.5 db Gain @ 1.9 GHz +37. dbm Output IP3 +22.5 dbm P1dB Shut-down capability Unconditionally stable 5 Ohm Cascadable Gain Block +5V Single Supply, 11 ma Current 2x2mm 8-lead DFN plastic package RF In 1 2 3 4 8 7 6 5 RF Out Shutdown General Description The TQP3M935 is a high linearity low noise gain block amplifier in a low-cost surface-mount package. At 1.9 GHz, the amplifier typically provides 16.5 db gain, +37. dbm OIP3, and.66 db Noise Figure. The LNA is also designed to be broadband without the requirement for external matching. The device is housed in a leadfree/green/rohs-compliant industry-standard 2x2mm package. The TQP3M935 has the benefit of having high linearity while also providing very low noise across a broad range of frequencies. This allows the device to be used in both receive and transmit chains for high performance systems. The amplifier is internally matched using a high performance E-pHEMT process and only requires an external RF choke and blocking/bypass capacitors for operation from a single +5V supply. The low noise amplifier integrates a shut-down biasing capability to allow for operation for TDD applications. The TQP3M935 covers the.5-4 GHz frequency band and is targeted for wireless infrastructure or other applications requiring high linearity and/or low noise figure. Pin Configuration Pin # Symbol 1,3,4,5,8 N/A 2 RF Input 6 SD (Shutdown) 7 RF Output Ordering Information Part No. Description TQP3M935 TQP3M935-PCB.5-4 GHz Evaluation Board Standard T/R size = 25 pieces on a 7 reel. Data Sheet: Rev B 5/1/12-1 of 7 - Disclaimer: Subject to change without notice

Specifications Absolute Maximum Ratings Parameter Storage Temperature Device Voltage,V dd Max RF Input Power (continuous) Rating -55 to +15 o C +6 V +23 dbm Operation of this device outside the parameter ranges given above may cause permanent damage. Recommended Operating Conditions Parameter Min Typ Max Units V dd +5 +5.25 V T case -4 85 Tj (for>1 6 hours MTTF) 19 o C o C Electrical specifications are measured at specified test conditions. Specifications are not guaranteed over all recommended operating conditions. Electrical Specifications Test conditions unless otherwise noted: +25ºC, +5V Vsupply, 5 Ω system. Parameter Conditions Min Typical Max Units Operational Frequency Range 5 4 MHz Test Frequency 19 MHz Gain 15 16.5 18 db Input Return Loss 15 db Output Return Loss 1 db Output P1dB +2 +22.5 dbm Output IP3 See Note 1. +32.5 +37. dbm Noise Figure.66.9 db V dd +5 V Current, I dd On state 11 ma Off state 3. ma Shutdown pin current, I sd V sd > 3 V 1 µa Thermal Resistance (jnc to case) θ jc 5 o C/W Notes 1. OIP3 measured with two tones at an output power of +4 dbm / tone separated by 1 MHz. The suppression on the largest IM3 product is used to calculate the OIP3 using 2:1 rule. Power Shutdown Control State On state Power down Pin 6 Bias Condition.8 V 3. V Data Sheet: Rev B 5/1/12-2 of 7 - Disclaimer: Subject to change without notice

Application Circuit Configuration C4 J3 V DD J5 J4 J3 1 uf J4 GND C3 C1 U1 C4 C3 L1 R3 C2 J1 RF Input C1 1 pf 2 1,3,4,5,8 Q1 6 7 L1 1 pf 68 nh (63) C2 R2 1 pf J2 RF Output R2 33k Ω J5 P D R1 R1 1k Ω C5 C6 Notes: 1. See PC Board Layout, page 5 for more information. 2. Components shown on the silkscreen but not on the schematic are not used. 3. R3 ( Ω jumper) may be replaced with copper trace in the target application layout. 4. All components are of 42 size unless stated on the schematic. 5. C1, C2, and C3 are non-critical values. The reactive impedance should be as low as possible at the frequency of operation for optimal performance. 6. The L1 value is non-critical and needs to provide high reactive impedance at the frequency of operation. 7. R1 and R2 are optional and do not need to be loaded if the shut-down functionality is not needed; i.e. FDD applications. If R1 and R2 are not loaded, the LNA will operate in its standard ON state. 8. A through line is included on the evaluation board to de-embed the board losses. Bill of Material Reference Des. Value Description U1 n/a TQP3M935 Amplifier, 2x2 mm Package R1 1K Ω Resistor, Chip, 42, 5%, 1/16W R2 33K Ω Resistor, Chip, 42, 5%, 1/16W R3 Ω Resistor, Chip, 42, 5%, 1/16W L1 68 nh Inductor, 63, 5%, Ceramic C4 1. uf Cap., Chip, 42, 1%, 1V, X5R C1, C2, C3, C5, C6 1 pf Cap., Chip, 42, 5%, 5V, NPO/COG J3, J4, J5 n/a Solder Turret Data Sheet: Rev B 5/1/12-3 of 7 - Disclaimer: Subject to change without notice

Typical Performance TQP3M935-PCB Test conditions unless otherwise noted: +25ºC, +5V, 11 ma, 5 Ω system. The data shown below is measured on TQP3M935-PCB. Frequency MHz 9 19 26 Gain db 22. 16.5 14. Input Return Loss db 14 15 15 Output Return Loss db 13 1 8 Output P1dB dbm +22.6 +22.5 +22.5 OIP3 [1] dbm +37.2 +37. +37.3 Noise Figure [2] db.55.66 1. Notes: 1. OIP3 measured with two tones at an output power of +4 dbm / tone separated by 1 MHz. The suppression on the largest IM3 product is used to calculate the OIP3 using 2:1 rule. 2. Noise figure data shown in the table above is de-embedded to the device leads and removes PCB losses. RF Performance Plots Gain vs. Frequency 3 Temp.=+25 C Input Return Loss vs. Frequency Temp.=+25 C Output Return Loss vs. Frequency Temp.=+25 C Gain (db) 25 2 15 1 5 Input Return Loss (db) -5-1 -15-2 Output Return Loss (db) -5-1 -15-2 5 1 15 2 25 3 35 4 P1dB vs. Frequency 23-25 5 1 15 2 25 3 35 4 OIP3 vs. Pout/tone 5-25 5 1 15 2 25 3 35 4 Noise Figure vs. Frequency 2 P1dB (dbm) 22 21 2 OIP3 (dbm) 45 4 35 9 MHz 19 MHz 26 MHz NF (db) 1.5 1 19 3.5 18 5 1 15 2 25 3 35 4 25 1 2 3 4 5 6 7 8 Pout/Tone (dbm) Idd vs. Shutdown Voltage 14 5 1 15 2 25 3 35 4 Idd (ma) 12 1 8 6 4 +85 C +25 C - 4 C 2-2 1 2 3 4 5 Shutdown Voltage (V) Data Sheet: Rev B 5/1/12-4 of 7 - Disclaimer: Subject to change without notice

Pin Configuration and Description 1 8 RF In 2 7 RF Out 3 6 Shutdown 4 5 Pin Symbol Description 2 RF IN RF Input, DC Block Required 6 SD Shut-down pin. A high voltage turns off the device. If the pin is not connected or is less than 1V, then the device will operate under its normal operating condition. 7 RF OUT/BIAS RF Output, 5V DC Bias 1,3,4,5,8 N/A Ground or No-connect. No internal connection. Evaluations Board PCB Specifications Matirial Stack-Up and Layout.1".62" ±.6" Finished Board Thickness.1" Rogers 435B ε r =3.7 typ. Rogers 445F Rogers 435B 1 oz. Cu top layer 1 oz. Cu inner layer 1 oz. Cu inner layer 1 oz. Cu bottom layer The pad pattern shown has been developed and tested for optimized assembly at TriQuint Semiconductor. The PCB land pattern has been developed to accommodate lead and package tolerances. Since surface mount processes vary from supplier to supplier, careful process development is recommended. Data Sheet: Rev B 5/1/12-5 of 7 - Disclaimer: Subject to change without notice

Mechanical Information Package Information and Dimensions This package is lead-free/rohscompliant. The plating material on the backside and leads is annealed matte tin. The component will be marked with a 935 designator with an alphanumeric lot code on the top surface of package. The XXX is an auto generated number. 935 XXX PCB Mounting Pattern All dimensions are in millimeters (inches). Angles are in degrees. 3 Notes: 1. Ground / thermal vias are critical for the proper performance of this device. Vias should use a.35mm (#8 /.135 ) diameter drill and have a final plated thru diameter of.25 mm (.1 ). 2. Add as much copper as possible to inner and outer layers near the part to ensure optimal thermal performance. 3. RF trace width depends upon the PC board material and construction. 4. Use 1 oz. Copper minimum. Data Sheet: Rev B 5/1/12-6 of 7 - Disclaimer: Subject to change without notice

Product Compliance Information ESD Information ESD Rating: Class Value: Passes 1V on SD pin (6) Passes 25V on RF pins (2, 7) Test: Human Body Model (HBM) Standard: JEDEC Standard JESD22-A114 ESD Rating: Value: Test: Standard: Class IV Passes 1V Charged Device Model (CDM) JEDEC Standard JESD22-C11 Solderability Compatible with the latest version of J-STD-2, Lead free solder, 26 This part is compliant with EU 22/95/EC RoHS directive (Restrictions on the Use of Certain Hazardous Substances in Electrical and Electronic Equipment). This product also has the following attributes: Lead Free Halogen Free (Chlorine, Bromine) Antimony Free TBBP-A (C 15 H 12 Br 4 2 ) Free PFOS Free SVHC Free MSL Rating The part is rated Moisture Sensitivity Level 1 at 26 C per JEDEC standard IPC/JEDEC J-STD-2. Contact Information For the latest specifications, additional product information, worldwide sales and distribution locations, and information about TriQuint: Web: www.triquint.com Tel: +1.53.615.9 Email: info-sales@tqs.com Fax: +1.53.615.892 For technical questions and application information: Email: sjcapplications.engineering@tqs.com Important Notice The information contained herein is believed to be reliable. TriQuint makes no warranties regarding the information contained herein. TriQuint assumes no responsibility or liability whatsoever for any of the information contained herein. TriQuint assumes no responsibility or liability whatsoever for the use of the information contained herein. The information contained herein is provided "AS IS, WHERE IS" and with all faults, and the entire risk associated with such information is entirely with the user. All information contained herein is subject to change without notice. Customers should obtain and verify the latest relevant information before placing orders for TriQuint products. The information contained herein or any use of such information does not grant, explicitly or implicitly, to any party any patent rights, licenses, or any other intellectual property rights, whether with regard to such information itself or anything described by such information. TriQuint products are not warranted or authorized for use as critical components in medical, life-saving, or life-sustaining applications, or other applications where a failure would reasonably be expected to cause severe personal injury or death. Data Sheet: Rev B 5/1/12-7 of 7 - Disclaimer: Subject to change without notice

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