SCT28KE Nchannel SiC power MOSFET Features V DSS R DS(on) (Typ.) I D P D ) Low onresistance 2V 8mW 4A 262W Outline TO247 Inner circuit 2) Fast switching speed 3) Fast reverse recovery 4) Easy to parallel 5) Simple to drive 6) Pbfree lead plating ; RoHS compliant Packaging specifications Packing () Gate (2) Drain (3) Source * Body Diode Tube Application Solar inverters DC/DC converters Induction heating Motor drives Type Reel size (mm) Tape width (mm) Basic ordering unit (pcs) 3 Packing code C Marking SCT28KE Absolute maximum ratings (T a = 25 C) Parameter Symbol Value Unit Drain Source voltage V DSS 2 V Continuous drain current T c = 25 C T c = C * I D * I D 4 28 A A drain current I D,pulse *2 8 A Gate Source voltage (DC) V GSS Gate Source surge voltage (T surge 3nsec) V GSSsurge *3 Power dissipation (T c = 25 C) P D 6 to 22 V to 26 V 262 W Junction temperature T j 75 C Range of storage temperature T stg 55 to +75 C /3 25. Rev.F
SCT28KE Thermal resistance Parameter Symbol Min. Values Typ. Max. Unit Thermal resistance, junction case R thjc.44.57 C/W Thermal resistance, junction ambient R thja 5 C/W Soldering temperature, wavesoldering for s T sold 265 C Electrical characteristics (T a = 25 C) Parameter Symbol Conditions Min. Values Typ. Max. Unit Drain Source breakdown voltage V (BR)DSS V GS = V, I D = ma 2 V Zero gate voltage drain current V DS = 2V, V GS = V I DSS T j = 25 C T j = 5 C 2 A Gate Source leakage current I GSS+ V GS = +22V, V DS = V na Gate Source leakage current I GSS V GS = 6V, V DS = V na Gate threshold voltage V GS (th) V DS = V GS, I D = 4.4mA.6 2.8 4. V * Limited only by maximum temperature allowed. *2 PW s, Duty cycle % *3 Example of acceptable Vgs waveform 2/3 25. Rev.F
SCT28KE Electrical characteristics (T a = 25 C) Parameter Symbol Conditions Min. Values Typ. Max. Unit Static drain source on state resistance R DS(on) V GS = 8V, I D = A T j = 25 C 8 7 T j = 25 C 25 mw Gate input resistance R G f = MHz, open drain 6.3 W Transconductance g fs V DS = V, I D = A 3.7 S Input capacitance C iss V GS = V 28 Output capacitance C oss V DS = 8V 77 pf Reverse transfer capacitance C rss f = MHz 6 Effective output capacitance, energy related C o(er) V GS = V V DS = V to 5V 6 pf Turn on delay time t d(on) V DD = 4V, V GS = 8V 35 Rise time t r Turn off delay time t d(off) I D = A R L = 4W 36 76 ns Fall time R G = W t f 22 V DD = 6V, I D =A Turn on switching loss E on V GS = 8V/V R G = W, L=5 H *E on includes diode Turn off switching loss E off reverse recovery 74 5 J Gate Charge characteristics (T a = 25 C) Parameter Symbol Conditions Min. Values Typ. Max. Unit Total gate charge Q g V DD = 4V 6 Gate Source charge Q gs I D = A 27 nc Gate Drain charge Q gd V GS = 8V 3 Gate plateau voltage V (plateau) V DD = 4V, I D = A 9.7 V 3/3 25. Rev.F
SCT28KE Body diode electrical characteristics (SourceDrain) (T a = 25 C) Parameter Symbol Conditions Min. Values Typ. Max. Unit Inverse diode continuous, forward current Inverse diode direct current, pulsed I S * I SM *2 T c = 25 C 4 8 A A Forward voltage V SD V GS = V, I S = A 4.6 V Reverse recovery time Reverse recovery charge Peak reverse recovery current t rr Q rr I rrm I F = A, V R = 4V di/dt = 5A/ s 3 ns 44 nc 2.3 A Typical Transient Thermal Characteristics Symbol Value Unit Symbol Value Unit R th.78 C th.5 R th2.97 K/W C th2.8 Ws/K R th3.62 C th3.249 4/3 25. Rev.F
SCT28KE Electrical characteristic curves Fig. Power Dissipation Derating Curve Fig.2 Maximum Safe Operating Area 3 P W = us Power Dissipation : P D [W] 25 2 5 5 5 5 2 Operation in this area is limited by R DS(ON) P W = ms P W = ms P W = ms Single Pulse.. Junction Temperature : Tj [ C] Drain Source Voltage : V DS [V] Transient Thermal Resistance : R th [K/W].. Fig.3 Typical Transient Thermal Resistance vs. Pulse Width Single..... Pulse Width : PW [s] 5/3 25. Rev.F
SCT28KE Electrical characteristic curves Fig.4 Typical Output Characteristics(I) Fig.5 Typical Output Characteristics(II) 4 35 3 25 2 5 5 V GS = 2V V GS = 8V V GS = 6V V GS = 4V V GS = 2V V GS = V 2 4 6 8 2 8 6 4 2 8 6 4 2 V GS = 2V V GS = 8V V GS = 6V V GS = 4V V GS = V V GS = 2V 2 3 4 5 Drain Source Voltage : V DS [V] Drain Source Voltage : V DS [V] Fig.6 Typical Output Characteristics(I) Fig.7 Typical Output Characteristics(II) 4 35 3 25 2 5 5 V GS = 6V V GS = 4V V GS = 2V V GS = 8V V GS = 2V V GS = V T a = 5ºC 2 4 6 8 2 8 6 4 2 8 6 4 2 V GS = 8V V GS = 6V V GS = 4V V GS = 2V V GS = 2V V GS = V T a = 5ºC 2 3 4 5 Drain Source Voltage : V DS [V] Drain Source Voltage : V DS [V] 6/3 25. Rev.F
SCT28KE Electrical characteristic curves Fig.8 Typical Transfer Characteristics Fig.9 Typical Transfer Characteristics (II) V DS = V 4 35 V DS = V 3. T a = 5ºC T a = 75ºC 25 2 5 T a = 5ºC T a = 75ºC 5. 2 4 6 8 2 4 6 8 2 2 4 6 8 2 4 6 8 2 Gate Source Voltage : V GS [V] Gate Source Voltage : V GS [V] Gate Threshold Voltage : V GS(th) [V] 4.5 3.5 2.5.5.5 Fig. Gate Threshold Voltage vs. Junction Temperature 5 4 3 2 V DS = V I D = ma 5 5 5 Transconductance : g fs [S]. Fig. Transconductance vs. Drain Current V DS = V T a = 5ºC T a = 75ºC... Junction Temperature : T j [ C] 7/3 25. Rev.F
SCT28KE Electrical characteristic curves Static Drain Source OnState Resistance : R DS(on) [Ω] Fig.2 Static Drain Source On State Resistance vs. Gate Source Voltage.8.6.4.2 I D = A I D = 2A 6 8 2 4 6 8 2 22 Gate Source Voltage : V GS [V] Static Drain Source OnState Resistance : R DS(on) [Ω].5 Fig.3 Static Drain Source On State Resistance vs. Junction Temperature..5 V GS = 8V I D = 2A I D = A 5 5 5 Junction Temperature : T j [ºC] Static Drain Source OnState Resistance : R DS(on) [Ω] Fig.4 Static Drain Source On State Resistance vs. Drain Current. V GS = 8V.. T a = 5ºC T a = 75ºC 8/3 25. Rev.F
SCT28KE Electrical characteristic curves Fig.5 Typical Capacitance vs. Drain Source Voltage 4 Fig.6 Coss Stored Energy Capacitance : C [pf] f = MHz V GS = V C rss C oss C iss Coss Stored Energy : E OSS [uj] 3 2. 2 4 6 8 Drain Source Voltage : V DS [V] Drain Source Voltage : V DS [V] Fig.7 Switching Characteristics Fig.8 Dynamic Input Characteristics 2 Switching Time : t [ns] t d(off) t r t d(on) t f V DD = 4V V GS = 8V R G = Ω Gate Source Voltage : V GS [V] 5 5 V DD = 4V I D = A.. 2 4 6 8 2 Total Gate Charge : Q g [nc] 9/3 25. Rev.F
SCT28KE Electrical characteristic curves Switching Energy : E [ J] 3 25 2 5 Fig.9 Typical Switching Loss vs. Drain Source Voltage 5 I D =A V GS = 8V/V R G =W L=5 H E on E off 2 4 6 8 Drain Source Voltage : V DS [V] Switching Energy : E [ J] 2 9 8 7 6 5 4 3 2 Fig.2 Typical Switching Loss vs. Drain Current V DD =6V V GS = 8V/V R G =W L=5 H E on E off 5 5 2 25 3 35 Drain Current : I D [A] Switching Energy : E [ J] 5 45 4 35 3 25 2 5 Fig.2 Typical Switching Loss vs. External Gate Resistance 5 V DD =6V I D =A V GS = 8V/V L=5 H E on E off 5 5 2 25 3 External Gate Resistance : R G [W] /3 25. Rev.F
SCT28KE Electrical characteristic curves Inverse Diode Forward Current : I S [A] Fig.22 Inverse Diode Forward Current vs. Source Drain Voltage.. V GS = V T a = 5ºC T a = 75ºC 2 3 4 5 6 7 8 Source Drain Voltage : V SD [V] Reverse Recovery Time : t rr [ns] Fig.23 Reverse Recovery Time vs.inverse Diode Forward Current di / dt = 5A / us V R = 4V V GS = V Inverse Diode Forward Current : I S [A] /3 25. Rev.F
SCT28KE Measurement circuits Fig. Switching Time Measurement Circuit Fig.2 Switching Waveforms Fig.2 Gate Charge Measurement Circuit Fig.22 Gate Charge Waveform Fig.3 Switching Energy Measurement Circuit Fig.32 Switching Waveforms E on = I D V DS E off = I D V DS Same type device as D.U.T. V DS I rr V surge D.U.T. I D I D Fig.4 Reverse Recovery Time Measurement Circuit Fig.42 Reverse Recovery Waveform 2/3 25. Rev.F
SCT28KE Dimensions (Unit : mm) TO247 3/3 25. Rev.F
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