MITSUBISHI RF MOSFET MODULE RA3H17M 1-7MHz 3W 1.5V, Stage Amp. For MOBILE RADIO DESCRIPTION The RA3H17M is a 3-watt RF MOSFET Amplifier Module for 1.5-volt mobile radios that operate in the 1- to 7-MHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage (V GG =V), only a small leakage current flows into the drain and the RF input signal attenuates up to db. The output power and drain current increase as the gate voltage increases. With a gate voltage around V (minimum), output power and drain current increases substantially. The nominal output power becomes available at.5v (typical) and 5V (maximum). At, the typical gate current is 1 ma. This module is designed for non-linear FM modulation, but may also be used for linear modulation by setting the drain quiescent current with the gate voltage and controlling the output power with the input power. FEATURES Enhancement-Mode MOSFET Transistors ( @ V DD =1.5V, V GG =V) >3W, η T >% @ V DD =1.5V,, P in =5mW Broadband Frequency Range: 1-7MHz Low-Power Control Current I GG =1mA (typ) at Module Size: x 1 x 9. mm Linear operation is possible by setting the quiescent drain current with the gate voltage and controlling the output power with the input power BLOCK DIAGRAM 3 1 5 1 RF Input (P in) Gate Voltage (V GG), Power Control 3 Drain Voltage (V DD), Battery RF Output () 5 RF Ground (Case) PACKAGE CODE: HS ORDERING INFORMATION: ORDER NUMBER RA3H17M-1 SUPPLY FORM Antistatic tray, 1 modules/tray RA3H17M MITSUBISHI ELECTRIC 5 April 1/9
MAXIMUM RATINGS (T case=+5 C, unless otherwise specified) RA3H17M SYMBOL PARAMETER CONDITIONS RATING UNIT V DD Drain Voltage V GG<5V 17 V V GG Gate Voltage V DD<1.5V, P in=mw V P in Input Power f=1-7mhz, 1 mw Output Power Z G=Z L=5Ω 5 W T case(op) Operation Case Temperature Range -3 to +11 C T stg Storage Temperature Range - to +11 C The above parameters are independently guaranteed. ELECTRICAL CHARACTERISTICS (T case=+5 C, Z G=Z L=5Ω, unless otherwise specified) SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT f Frequency Range 1 7 MHz Output Power 3 W η T Total Efficiency V DD=1.5V, % f o nd Harmonic V GG=5V, -5 dbc ρ in Input VSWR P in=5mw 3:1 I GG Gate Current Stability Load VSWR Tolerance V DD=1.-15.V, P in=5-7mw, <W (V GG control), Load VSWR=3:1 V DD=15.V, P in=5mw, =3W (V GG control), Load VSWR=:1 1 ma No parasitic oscillation No degradation or destroy All parameters, conditions, ratings, and limits are subject to change without notice. RA3H17M MITSUBISHI ELECTRIC 5 April /9
RA3H17M TYPICAL PERFORMANCE (T case=+5 C, Z G=Z L=5Ω, unless otherwise specified) OUTPUT POWER (W) INPUT VSWR ρin (-) OUTPUT POWER, TOTAL EFFICIENCY, and INPUT VSWR versus FREQUENCY 1 5 3 1 V DD =1.5V V GG=5V P in =5mW r in h T 1 3 5 7 FREQUENCY f(mhz) 1 TOTAL EFFICIENCY ηt(%) HARMONICS (dbc) nd, 3 rd HARMONICS versus FREQUENCY - -3 - -5 - V DD =1.5V V GG=5V P in =5mW nd 3 rd : < -dbc -7 1 3 5 7 FREQUENCY f(mhz) OUTPUT POWER, POWER GAIN and DRAIN CURRENT versus INPUT POWER 1 OUTPUT POWER, POWER GAIN and DRAIN CURRENT versus INPUT POWER 1 OUTPUT POWER (dbm) POWER GAIN Gp(dB) 5 3 Gp f=1mhz, 1 V DD=1.5V, -1-5 5 1 15 INPUT POWER P in (dbm) 1 DRAIN CURRENT (A) OUTPUT POWER (dbm) POWER GAIN Gp(dB) 5 3 1 Gp f=mhz, V DD=1.5V, -1-5 5 1 15 INPUT POWER P in (dbm) 1 DRAIN CURRENT (A) OUTPUT POWER Pout(dBm) POWER GAIN Gp(dB) OUTPUT POWER, POWER GAIN and DRAIN CURRENT versus INPUT POWER 5 3 1 Gp f=7mhz, V DD =1.5V, -1-5 5 1 15 INPUT POWER P in (dbm) 1 1 DRAIN CURRENT (A) OUTPUT POWER Pout(W) versus DRAIN VOLTAGE 9 1 7 5 3 1 f=1mhz, V DD =1.5V, 1 1 1 1 DRAIN VOLTAGE V DD (V) 1 1 1 1 DRAIN CURRENT IDD(A) OUTPUT POWER (W) versus DRAIN VOLTAGE 9 1 7 5 3 1 f=mhz, V DD =1.5V, V GG=5V 1 1 1 1 DRAIN VOLTAGE V DD (V) 1 1 1 1 DRAIN CURRENT (A) RA3H17M MITSUBISHI ELECTRIC 5 April 3/9
RA3H17M TYPICAL PERFORMANCE (T case=+5 C, Z G=Z L=5Ω, unless otherwise specified) OUTPUT POWER (W) versus DRAIN VOLTAGE 9 1 7 5 3 1 f=7mhz, V DD =1.5V, Pout 1 1 1 1 DRAIN VOLTAGE V DD (V) 1 1 1 1 DRAIN CURRENT (A) OUTPUT POWER (W) versus GATE VOLTAGE 1 5 3 1 f=1mhz, VDD=1.5V, VGG=5V Pout.5 3 3.5.5 5 GATE VOLTAGE V GG (V) 1 DRAIN CURRENT (A) OUTPUT POWER (W) versus GATE VOLTAGE 1 5 3 1 f=mhz, V DD =1.5V, Pout.5 3 3.5.5 5 GATE VOLTAGE V GG (V) 1 DRAIN CURRENT (A) OUTPUT POWER (W) versus GATE VOLTAGE 1 5 3 1 f=7mhz, V DD =1.5V,.5 3 3.5.5 5 GATE VOLTAGE V GG (V) 1 DRAIN CURRENT (A) RA3H17M MITSUBISHI ELECTRIC 5 April /9
RA3H17M OUTLINE DRAWING (mm). ±.5 3. ±.3 7.5 ±.. ±.5 51.5 ±.5 -R ±.5 1. ±1 1. ±.5 9.5 ±.5. ±.5 1 3 5 Ø.5 ±.15. ±.3 17. ±.5 1. ±1 1.5 ±1 3.5 ±1 55.5 ±1 3.1 +./-..9 ±. 7.5 ±.5.3 ±.3 (9.) (5.) 1 RF Input (P in ) Gate Voltage (V GG ) 3 Drain Voltage (V DD ) RF Output ( ) 5 RF Ground (Case) RA3H17M MITSUBISHI ELECTRIC 5 April 5/9
RA3H17M TEST BLOCK DIAGRAM Power Meter DUT 5 Spectrum Analyzer 1 3 Signal Generator Attenuator Preamplifier Attenuator Directional Coupler Z G=5Ω Z L=5Ω Directional Coupler Attenuator Power Meter C1 C C1, C: 7pF, uf in parallel - + DC Power Supply V GG + - DC Power Supply V DD 1 RF Input (P in ) Gate Voltage (V GG ) 3 Drain Voltage (V DD ) RF Output ( ) 5 RF Ground (Case) EQUIVALENT CIRCUIT 3 1 5 RA3H17M MITSUBISHI ELECTRIC 5 April /9
RA3H17M PRECAUTIONS, RECOMMENDATIONS, and APPLICATION INFORMATION: Construction: This module consists of an alumina substrate soldered onto a copper flange. For mechanical protection, a plastic cap is attached with silicone. The MOSFET transistor chips are die bonded onto metal, wire bonded to the substrate, and coated with resin. Lines on the substrate (eventually inductors), chip capacitors, and resistors form the bias and matching circuits. Wire leads soldered onto the alumina substrate provide the DC and RF connection. Following conditions must be avoided: a) Bending forces on the alumina substrate (for example, by driving screws or from fast thermal changes) b) Mechanical stress on the wire leads (for example, by first soldering then driving screws or by thermal expansion) c) Defluxing solvents reacting with the resin coating on the MOSFET chips (for example, Trichlorethylene) d) Frequent on/off switching that causes thermal expansion of the resin e) ESD, surge, overvoltage in combination with load VSWR, and oscillation ESD: This MOSFET module is sensitive to ESD voltages down to 1V. Appropriate ESD precautions are required. Mounting: Heat sink flatness must be less than 5 µm (a heat sink that is not flat or particles between module and heat sink may cause the ceramic substrate in the module to crack by bending forces, either immediately when driving screws or later when thermal expansion forces are added). A thermal compound between module and heat sink is recommended for low thermal contact resistance and to reduce the bending stress on the ceramic substrate caused by the temperature difference to the heat sink. The module must first be screwed to the heat sink, then the leads can be soldered to the printed circuit board. M3 screws are recommended with a tightening torque of. to. Nm. Soldering and Defluxing: This module is designed for manual soldering. The leads must be soldered after the module is screwed onto the heat sink. The soldering temperature must be lower than C for a maximum of 1 seconds, or lower than 35 C for a maximum of three seconds. Ethyl Alcohol is recommend for removing flux. Trichlorethylene solvents must not be used (they may cause bubbles in the coating of the transistor chips which can lift off the bond wires). Thermal Design of the Heat Sink: At =3W, V DD =1.5V and P in =5mW each stage transistor operating conditions are: P Stage in R th(ch-case) @ η T=% (W) (W) ( C/W) (A) 1 st.5 5..5.95 nd 5. 3. 1. 5. The channel temperatures of each stage transistor T ch = T case + (V DD x - + P in ) x R th(ch-case) are: T ch1 = T case + (1.5V x.95a 5.W +.5W) x.5 C/W = T case + 31. C T ch = T case + (1.5V x 5.A - 3.W + 5.W) x 1. C/W = T case + 5. C For long-term reliability, it is best to keep the module case temperature (T case ) below 9 C. For an ambient temperature T air = C and =3W, the required thermal resistance R th (case-air) = ( T case - T air ) / ( ( / η T ) - + P in ) of the heat sink, including the contact resistance, is: R th(case-air) = (9 C - C) / (3W/% 3W +.5W) =.7 C/W When mounting the module with the thermal resistance of.7 C/W, the channel temperature of each stage transistor is: T ch1 = T air + 31. C T ch = T air + 5. C The 175 C maximum rating for the channel temperature ensures application under derated conditions. V DD (V) 1.5 RA3H17M MITSUBISHI ELECTRIC 5 April 7/9
RA3H17M Output Power Control: Depending on linearity, the following two methods are recommended to control the output power: a) Non-linear FM modulation: By the gate voltage (V GG ). When the gate voltage is close to zero, the RF input signal is attenuated up to db and only a small leakage current flows from the battery into the drain. Around V GG =V, the output power and drain current increases substantially. Around V GG =.5V (typical) to (maximum), the nominal output power becomes available. b) Linear AM modulation: By RF input power P in. The gate voltage is used to set the drain s quiescent current for the required linearity. Oscillation: To test RF characteristics, this module is put on a fixture with two bias decoupling capacitors each on gate and drain, a.7 pf chip capacitor, located close to the module, and a µf (or more) electrolytic capacitor. When an amplifier circuit around this module shows oscillation, the following may be checked: a) Do the bias decoupling capacitors have a low inductance pass to the case of the module? b) Is the load impedance Z L =5Ω? c) Is the source impedance Z G =5Ω? Frequent on/off switching: In base stations, frequent on/off switching can cause thermal expansion of the resin that coats the transistor chips and can result in reduced or no output power. The bond wires in the resin will break after long-term thermally induced mechanical stress. Quality: Mitsubishi Electric is not liable for failures resulting from base station operation time or operating conditions exceeding those of mobile radios. This module technology results from more than years of experience, field proven in tens of millions of mobile radios. Currently, most returned modules show failures such as ESD, substrate crack, and transistor burnout, which are caused by improper handling or exceeding recommended operating conditions. Few degradation failures are found. Keep safety first in your circuit designs! Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable material, or (iii) prevention against any malfunction or mishap. RA3H17M MITSUBISHI ELECTRIC 5 April /9
SALES CONTACT JAPAN: Mitsubishi Electric Corporation Semiconductor Sales Promotion Department --3 Marunouchi, Chiyoda-ku Tokyo, Japan 1 Email: sod.sophp@hq.melco.co.jp Phone: +1-3-31-5 Fax: +1-3-31-1 GERMANY: Mitsubishi Electric Europe B.V. Semiconductor Gothaer Strasse D- Ratingen, Germany Email: semis.info@meg.mee.com Phone: +9-1-- Fax: +9-1--1 HONG KONG: Mitsubishi Electric Hong Kong Ltd. Semiconductor Division 1/F. Manulife Tower, 19 Electric Road North Point, Hong Kong Email: scdinfo@mehk.com Phone: +5 51-555 Fax: +5 51-9 FRANCE: Mitsubishi Electric Europe B.V. Semiconductor 5 Boulevard des Bouvets F-971 Nanterre Cedex, France Email: semis.info@meg.mee.com Phone: +33-1-555- Fax: +33-1-555-739 SINGAPORE: Mitsubishi Electric Asia PTE Ltd Semiconductor Division 37 Alexandra Road #3-1/ Mitsubishi Electric Building, Singapore 15993 Email: semicon@asia.meap.com Phone: +5 73 3 Fax: +5 73 9 ITALY: Mitsubishi Electric Europe B.V. Semiconductor Centro Direzionale Colleoni, Palazzo Perseo, Via Paracelso I-1 Agrate Brianza, Milano, Italy Email: semis.info@meg.mee.com Phone: +39-39-53-1 Fax: +39-39-53-1 TAIWAN: Mitsubishi Electric Taiwan Company, Ltd., Semiconductor Department 9F, No., Sec. Chung Shan N. Road Taipei, Taiwan, R.O.C. Email: metwnssi@metwn.meap.com Phone: +--3-5 Fax: +--33-9793 U.K.: Mitsubishi Electric Europe B.V. Semiconductor Travellers Lane, Hatfield Hertfordshire, AL1 XB, England Email: semis.info@meuk.mee.com Phone: +-177-7-9 Fax: +-177-7-37 U.S.A.: Mitsubishi Electric & Electronics USA, Inc. Electronic Device Group 15 East Arques Avenue Sunnyvale, CA 95 Email: customerservice@edg.mea.com Phone: -73-59 Fax: -737-119 CANADA: Mitsubishi Electric Sales Canada, Inc. 99 1th Avenue Markham, Ontario, Canada L3R OJ Phone: 95-75-77 Fax: 95-75-191 AUSTRALIA: Mitsubishi Electric Australia, Semiconductor Division 3 Victoria Road Rydalmere, NSW 11 Sydney, Australia Email: semis@meaust.meap.com Phone: +1 9-71 +1 9 71 +1 9 71 +1 3 9 99 Fax: +1 9-7 +1 9 75 RA3H17M MITSUBISHI ELECTRIC 5 April 9/9