VS-MURCTPbF, VS-MURCT-PbF Ultrafast Rectifier, x 5 FRED Pt VS-MURCTPbF node ase common cathode 3 Common cathode D PK PRODUCT SUMMRY t rr I F(V) V R node VS-MURCT-PbF node ase common cathode 3 Common cathode TO-6 5 ns x 5 V node FETURES Ultrafast recovery time Low forward voltage drop Low leakage current 75 C operating junction temperature Meets MSL level, per J-STD-, LF maximum peak of 6 C Halogen-free according to IEC 649-- definition Compliant to RoHS directive /95/EC EC-Q qualified DESCRIPTION/PPLICTIONS MUR.. series are the state of the art ultrafast recovery rectifiers specifically designed with optimized performance of forward voltage drop and ultrafast recovery time. The planar structure and the platinum doped life time control, guarantee the best overall performance, ruggedness and reliability characteristics. These devices are intended for use in the output rectification stage of SMPS, UPS, dc-to-dc converters as well as freewheeling diode in low voltage inverters and chopper motor drives. Their extremely optimized stored charge and low recovery current minimize the switching losses and reduce over dissipation in the switching element and snubbers. SOLUTE MXIMUM RTINGS PRMETER SYMOL TEST CONDITIONS MX. UNITS Peak repetitive reverse voltage V RRM V per leg 5 verage rectified forward current I F(V) total device Rated V R, T C = 49 C Non-repetitive peak surge current per leg I FSM 5 Peak repetitive forward current per leg I FM Rated V R, square wave, khz, T C = 49 C Operating junction and storage temperatures, T Stg - 65 to 75 C ELECTRICL SPECIFICTIONS ( = 5 C unless otherwise specified) PRMETER SYMOL TEST CONDITIONS MIN. TYP. MX. UNITS reakdown voltage, blocking voltage V R, V R I R = μ - - Forward voltage V F I F =, = 5 C -.. I F = 5, = 5 C -.87.99 V I F =, = 5 C -..5 V R = V R rated - - Reverse leakage current I R = 5 C, V R = V R rated - - 5 μ Junction capacitance C T V R = V - 8 - pf Series inductance L S Measured lead to lead 5 mm from package body - 8. - nh Document Number: 9458 For technical questions, contact: diodestech@vishay.com www.vishay.com Revision: -Mar-
VS-MURCTPbF, VS-MURCT-PbF Ultrafast Rectifier, x 5 FRED Pt DYNMIC RECOVERY CHRCTERISTICS ( = 5 C unless otherwise specified) PRMETER SYMOL TEST CONDITIONS MIN. TYP. MX. UNITS I F =., di F /dt = 5 /μs, V R = 3 V - - 35 Reverse recovery time t rr I F =.5, I R =., I REC =.5 V - - 5 = 5 C - 4 - ns = 5 C - 35 - Peak recovery current I RRM T I F = 5 J = 5 C - 3.3 - di F /dt = /μs = 5 C V R = 6 V - 5. - = 5 C - 33 - Reverse recovery charge Q rr = 5 C - 76 - nc THERML - MECHNICL SPECIFICTIONS PRMETER SYMOL TEST CONDITIONS MIN. TYP. MX. UNITS Maximum junction and storage temperature range, T Stg - 65-75 C Thermal resistance, junction to case per leg R thjc - - 5 Thermal resistance, junction to ambient per leg Thermal resistance, case to heatsink Weight Mounting torque Marking device R thj - - 5 R thcs Mounting surface, flat, smooth and greased -.5 - Case style D PK Case style TO-6 C/W -. - g -.7 - oz. 6. (5.) - () MURCT MURCT- kgf cm (lbf in) www.vishay.com For technical questions, contact: diodestech@vishay.com Document Number: 9458 Revision: -Mar-
VS-MURCTPbF, VS-MURCT-PbF Ultrafast Rectifier, x 5 FRED Pt I F - Instantaneous Forward Current () 9458_ = 75 C = 5 C = 5 C...4.6.8...4.6 V F - Forward Voltage Drop (V) Fig. - Typical Forward Voltage Drop Characteristics Fig. - Typical Values of Reverse Current vs. Reverse Voltage I R - Reverse Current (μ).... 4 8 6 9458_ = 75 C = 5 C = 5 C = C V R - Reverse Voltage (V) = 5 C C T - Junction Capacitance (pf) = 5 C 9458_3 V R - Reverse Voltage (V) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage Z thjc - Thermal Impedance ( C/W) 9458_4... Single pulse (thermal resistance) D =.5 D =. D =. D =.5 D =. D =..... t - Rectangular Pulse Duration (s) Fig. 4 - Maximum Thermal Impedance Z thjc Characteristics P DM Notes:. Duty factor D = t /t. Peak = P DM x Z thjc + T C t t Document Number: 9458 For technical questions, contact: diodestech@vishay.com www.vishay.com Revision: -Mar- 3
VS-MURCTPbF, VS-MURCT-PbF Ultrafast Rectifier, x 5 FRED Pt llowable Case Temperature ( C) 9458_5 verage Power Loss (W) 8 7 6 5 4 9458_6 3 Square wave (D =.5) Rated V R applied See note () DC 4 6 8 I F(V) - verage Forward Current () Fig. 5 - Maximum llowable Case Temperature vs. verage Forward Current 7 6 5 4 3 D =. D =. D =.5 D =. D =. D =.5 DC RMS limit 3 4 5 6 7 8 I F(V) - verage Forward Current () Fig. 6 - Forward Power Loss Characteristics t rr (ns) 9458_7 Q rr (nc) 9458_8 5 4 3 V R = 6 V = 5 C = 5 C 6 4 8 6 di F /dt (/μs) I F = I F = 5 Fig. 7 - Typical Reverse Recovery Time vs. di F /dt I F = I F = 5 4 V R = 6 V = 5 C = 5 C di F /dt (/μs) Fig. 8 - Typical Stored Charge vs. di F /dt Note () Formula used: T C = - (Pd + Pd REV ) x R thjc ; Pd = Forward power loss = I F(V) x V FM at (I F(V) /D) (see fig. 6); Pd REV = Inverse power loss = V R x I R ( - D); I R at V R = Rated V R www.vishay.com For technical questions, contact: diodestech@vishay.com Document Number: 9458 4 Revision: -Mar-
VS-MURCTPbF, VS-MURCT-PbF Ultrafast Rectifier, x 5 FRED Pt V R = V L = 7 μh. Ω D.U.T. di F /dt adjust G D IRFP5 S Fig. 9 - Reverse Recovery Parameter Test Circuit (3) t rr I F t a tb () I RRM (4) Q rr.5 I RRM di (rec)m /dt (5).75 I RRM () di F /dt () di F /dt - rate of change of current through zero crossing () I RRM - peak reverse recovery current (3) t rr - reverse recovery time measured from zero crossing point of negative going I F to point where a line passing through.75 I RRM and.5 I RRM extrapolated to zero current. (4) Q rr - area under curve defined by t rr and I RRM t rr x I Q RRM rr = (5) di (rec)m /dt - peak rate of change of current during t b portion of t rr Fig. - Reverse Recovery Waveform and Definitions Document Number: 9458 For technical questions, contact: diodestech@vishay.com www.vishay.com Revision: -Mar- 5
VS-MURCTPbF, VS-MURCT-PbF ORDERING INFORMTION TLE Ultrafast Rectifier, x 5 FRED Pt Device code VS- MUR CT - TRL P 3 4 5 6 7 8 9 - HPP product suffix - Ultrafast MUR series 3 - = D PK/TO-6 4 - Current rating ( = ) 5 - Voltage rating ( = V) 6 - CT = Center tap (dual) 7 - None = D PK - = TO-6 8 - None = Tube (5 pieces) TRL = Tape and reel (left oriented, for D PK package) TRR = Tape and reel (right oriented, for D PK package) 9 - PbF = Lead (Pb)-free (for TO-6 and D PK tube) P = Lead (Pb)-free (for D PK TRR and TRL) Dimensions Part marking information Packaging information LINKS TO RELTED DOCUMENTS www.vishay.com/doc?954 www.vishay.com/doc?958 www.vishay.com/doc?953 www.vishay.com For technical questions, contact: diodestech@vishay.com Document Number: 9458 6 Revision: -Mar-
Outline Dimensions D PK, TO-6 DIMENSIONS FOR D PK in millimeters and inches Conforms to JEDEC outline D PK (SMD-) (3) L ()(3) E 4 c (E) (D) (3) Pad layout. MIN. (.43) 9.65 MIN. (.38) D L x e 3 H () x b x b C Detail. M M c ±.4 M E View - H (3) 7.9 (.7) 5. (.65).3 MIN. (.8) Plating.64 (.3).4 (.96) (4) b, b3 3.8 MIN. (.5) ase Metal Gauge plane Lead assignments Diodes. - node (two die)/open (one die)., 4. - Cathode 3. - node Lead tip to 8 L3 L L4 Detail Rotated 9 CW Scale: 8: Seating plane (c) (b, b) Section - and C - C Scale: None c (4) SYMOL MILLIMETERS INCHES MILLIMETERS INCHES NOTES SYMOL MIN. MX. MIN. MX. MIN. MX. MIN. MX. NOTES 4.6 4.83.6.9 D 6.86 8..7.35 3..54.. E 9.65.67.38.4, 3 b.5.99..39 E 7.9 8.8.3.346 3 b.5.89..35 4 e.54 SC. SC b.4.78.45.7 H 4.6 5.88.575.65 b3.4.73.45.68 4 L.78.79.7. c.38.74.5.9 L -.65 -.66 3 c.38.58.5.3 4 L.7.78.5.7 c.4.65.45.65 L3.5 SC. SC D 8.5 9.65.335.38 L4 4.78 5.8.88.8 Notes () Dimensioning and tolerancing per SME Y4.5 M-994 () Dimension D and E do not include mold flash. Mold flash shall not exceed.7 mm (.5") per side. These dimensions are measured at the outmost extremes of the plastic body (3) Thermal pad contour optional within dimension E, L, D and E (4) Dimension b and c apply to base metal only (5) Datum and to be determined at datum plane H (6) Controlling dimension: inch (7) Outline conforms to JEDEC outline TO-63 Document Number: 954 For technical questions concerning discrete products, contact: diodes-tech@vishay.com www.vishay.com Revision: 3-Mar-9 For technical questions concerning module products, contact: ind-modules@vishay.com
Outline Dimensions D PK, TO-6 DIMENSIONS FOR TO-6 in millimeters and inches Modified JEDEC outline TO-6 (Datum ) () (3) E (3) L c E D Seating plane D(3) L C 3 C L () x e. M M Lead tip 3 x b 3 x b c Lead assignments Diodes. - node (two die)/open (one die)., 4. - Cathode 3. - node Plating c E Section - (4) ase b, b3 metal (b, b) (3) c (4) Section - and C - C Scale: None SYMOL MILLIMETERS INCHES MIN. MX. MIN. MX. NOTES 4.6 4.83.6.9.3 3..8.9 b.5.99..39 b.5.89..35 4 b.4.78.45.7 b3.4.73.45.68 4 c.38.74.5.9 c.38.58.5.3 4 c.4.65.45.65 D 8.5 9.65.335.38 D 6.86 8..7.35 3 E 9.65.67.38.4, 3 E 7.9 8.8.3.346 3 e.54 SC. SC L 3.46 4..53.555 L -.65 -.65 3 L 3.56 3.7.4.46 Notes () Dimensioning and tolerancing as per SME Y4.5M-994 () Dimension D and E do not include mold flash. Mold flash shall not exceed.7 mm (.5") per side. These dimensions are measured at the outmost extremes of the plastic body (3) Thermal pad contour optional within dimension E, L, D and E (4) Dimension b and c apply to base metal only (5) Controlling dimension: inches (6) Outline conform to JEDEC TO-6 except (maximum), b (minimum) and D (minimum) where dimensions derived the actual package outline www.vishay.com For technical questions concerning discrete products, contact: diodes-tech@vishay.com Document Number: 954 For technical questions concerning module products, contact: ind-modules@vishay.com Revision: 3-Mar-9
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