TOSHIBA Transistor Silicon PNP Epitaxial Type TPC

Similar documents
TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5886

TOSHIBA Transistor Silicon NPN Epitaxial Type (Darlington Power) 2SD

2SA2066 2SA2066. High-Speed Switching Applications DC-DC Converter Applications. Maximum Ratings (Ta = 25 C) Electrical Characteristics (Ta = 25 C)

TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA1930

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Darlington power transistor) 2SD1508

2SC5784 2SC5784. High-Speed Switching Applications DC-DC Converter Applications. Maximum Ratings (Ta = 25 C) Electrical Characteristics (Ta = 25 C)

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC2655

TOSHIBA Multi-Chip Transistor Silicon NPN & PNP Epitaxial Type TPC6901. Rating Unit C/W

TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC4793

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1145. JEDEC TO-92MOD Storage temperature range T stg 55 to 150 C

TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2406. JEDEC Storage temperature range T stg 55 to 150 C

2SD1508 2SD1508. Pulse Motor Drive, Hammer Drive Applications Switching Applications Power Amplifier Applications. Maximum Ratings (Ta = 25 C)

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC3423

TOSHIBA Transistor Silicon NPN Epitaxial Type TPCP8701. Characteristics Symbol Rating Unit

TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5612

2SC3657 2SC3657. Switching Regulator and High-Voltage Switching Applications High-Speed DC-DC Converter Applications. Maximum Ratings (Tc = 25 C)

TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5858

2SC6033 2SC6033. High-Speed Swtching Applications DC-DC Converter Applications Storobe Flash Applications. Maximum Ratings (Ta = 25 C)

2SC2873 2SC2873. Power Amplifier Applications Power Switching Applications. Maximum Ratings (Ta = 25 C)

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1145

2SC5353 2SC5353. Switching Regulator and High Voltage Switching Applications High-Speed DC-DC Converter Applications. Maximum Ratings (Tc = 25 C)

查询 D2553 供应商 2SD2553 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SD2553. DC I C 8 A Pulse I CP 16

2SD2638 2SD2638. Horizontal Deflection Output for Color TV, Digital TV High Speed Switching Applications. Maximum Ratings (Tc = 25 C)

TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT30J322

TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2060

TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT50J301

TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2065

TOSHIBA Transistor Silicon PNP / NPN Epitaxial Type (PCT Process) HN4B101J. Rating Unit PNP NPN. DC (Note 1) I C A Pulse (Note 1) I CP

TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT30J324

TOSHIBA Transistor Silicon NPN / PNP Epitaxial Type (PCT Process) TPCP8902. Unit PNP NPN V CEX V V CEO

TOSHIBA Transistor Silicon PNP / NPN Epitaxial Type (PCT Process) HN4B102J. Rating

TOSHIBA Multi-Chip Transistor Silicon NPN / PNP Epitaxial Type TPC6901A. Rating Unit. P C (Note 2) 500 mw. (Note 2) (Note 2) R th (j-a) (Note 2)

GT8G133 GT8G133. Strobe Flash Applications. Absolute Maximum Ratings (Ta = 25 C) Circuit Configuration. Thermal Characteristics.

TPCP8J01 8J01 TPCP8J01. Notebook PC Applications Portable Equipment Applications. Absolute Maximum Ratings (Ta = 25 C) MOSFET. Circuit Configuration

TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60J323H

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ200

TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2097

TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT45F123

GT30J322 GT30J322 FOURTH-GENERATION IGBT CURRENT RESONANCE INVERTER SWITCHING APPLICATIONS. MAXIMUM RATINGS (Ta = 25 C) EQUIVALENT CIRCUIT MARKING

TOSHIBA Field Effect Transistor Silicon P Channel Junction Type 2SJ108

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3303. TOSHIBA 2-7J1A temperature/current/voltage and the significant change in

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1428. JEITA Junction temperature T j 150 C

GT50J301 GT50J301 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS. MAXIMUM RATINGS (Ta = 25 C) EQUIVALENT CIRCUIT

TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA2142

TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC3225. JEITA Storage temperature range T stg 55 to 150 C

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1736. mw 1000 (Note 1)

TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA2142

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1244

TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC3405

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC3328. JEITA Storage temperature range T stg 55 to 150 C

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1213. mw 1000 (Note 1)

TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5548A

TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2012

TOSHIBA SCHOTTKY BARRIER RECTIFIER SCHOTTKY BARRIER TYPE U2FWJ44M CHARACTERISTIC SYMBOL TEST CONDITION MIN TYP. MAX UNIT

TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1943

TOSHIBA Transistor Silicon NPN Triple Diffused Type TTC5200

2SC1923 2SC1923. High Frequency Amplifier Applications FM, RF, MIX, IF Amplifier Applications. Maximum Ratings (Ta 25 C)

TLP631,TLP632 TLP631,TLP632. Programmable Controllers AC / DC Input Module Solid State Relay. Pin Configurations (top view)

GT60M323 GT60M323. Voltage Resonance Inverter Switching Application Unit: mm. Maximum Ratings (Ta = 25 C) Thermal Characteristics. Equivalent Circuit

TOSHIBA Transistor Silicon NPN Triple Diffused Type TTC5200

TLP620, TLP620 2, TLP620 4

TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (U MOS III) 2SJ669

GT50J325 GT50J325. High Power Switching Applications Fast Switching Applications. Maximum Ratings (Ta = 25 C) Thermal Characteristics

5DL2CZ47A, 5FL2CZ47A, 5GL2CZ47A

TOSHIBA Transistor Silicon NPN Triple Diffused Mesa Type 2SC5201

TLP627,TLP627-2,TLP627-4

HN1B01F HN1B01F. Audio-Frequency General-Purpose Amplifier Applications Q1: Q2: Marking. Q1 Absolute Maximum Ratings (Ta = 25 C)

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK3078A

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K7002FU

TLP181 TLP181. Office Machine Programmable Controllers AC / DC Input Module Telecommunication. Pin Configuration (top view)

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC2705

TLP280,TLP Programmable Controllers AC/DC Input Module PC Card Modem (PCMCIA) TOSHIBA Photocoupler GaAs Ired & Photo Transistor

TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5198. JEITA Storage temperature range T stg 55 to 150 C

TLP621,TLP621 2,TLP621 4

HN1B04FU HN1B04FU. Audio Frequency General Purpose Amplifier Applications. Marking. Q1 Absolute Maximum Ratings (Ta = 25 C)

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC4213

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1110MFV,RN1111MFV

TOSHIBA Infrared LED GaAs Infrared Emitter TLN108(F)

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2240

TOSHIBA Photocoupler Photorelay TLP222G, TLP222G-2

TA78L05F, TA78L06F, TA78L07F, TA78L08F, TA78L09F, TA78L10F, TA78L12F, TA78L15F, TA78L18F, TA78L20F, TA78L24F

TLP421 TLP421. Pin Configurations (top view) TOSHIBA Photocoupler GaAs Ired & Photo Transistor. Unit in mm

RN2101MFV, RN2102MFV, RN2103MFV RN2104MFV, RN2105MFV, RN2106MFV

TC4584BP,TC4584BF,TC4584BFN

ULN2803AP,ULN2803AFW,ULN2804AP,ULN2804AFW (Manufactured by Toshiba Malaysia)

U20DL2C53A U20DL2C53A. Switching Mode Power Supply Application Converter and Chopper Application. Absolute Maximum Ratings (Ta = 25 C) Polarity

2SK363 2SK363. For Audio Amplifier, Analog Switch, Constant Current and Impedance Converter Applications. Maximum Ratings (Ta = 25 C)

TOSHIBA PhotoInterrupter Infrared LED + Phototransistor TLP831(F)

RN4987 RN4987. Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications. Equivalent Circuit and Bias Resister Values

RN2101, RN2102, RN2103, RN2104, RN2105, RN2106

4N35(Short), 4N36(Short), 4N37(Short)

TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic TA48015F. 1.5 V Three-Terminal Low Dropout Voltage Regulator with Output Current of 1 A

ULN2003AP,ULN2003AFW,ULN2004AP,ULN2004AFW (Manufactured by Toshiba Malaysia)

TLP126 TLP126. Programmable Controllers AC / DC Input Module Telecommunication. Pin Configurations (top view)

ULN2803AP,ULN2803AFW,ULN2804AP,ULN2804AFW (Manufactured by Toshiba Malaysia)

TC74VHC14F,TC74VHC14FN,TC74VHC14FT,TC74VHC14FK

TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60M324

TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT40T321. DC I C 40 A 1ms I CP 80. DC I F 30 A 1ms I FP 80

TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5086. Characteristics Symbol Test Condition Min Typ. Max Unit

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π MOSV) 2SK3265

Transcription:

TOSHIBA Transistor Silicon PNP Epitaxial Type TPC662 High-Speed Switching Applications DC-DC Converter Applications Strobe Applications Unit: mm High DC current gain: h FE = 2 to 5 (I C =.2 A) Low collector-emitter saturation voltage: V CE (sat) = 9 V (max) High-speed switching: t f = ns (typ.) Absolute Maximum Ratings (Ta = C) Characteristics Symbol Rating Unit Collector-base voltage V CBO 2 V Collector-emitter voltage V CEO V Emitter-base voltage V EBO 7 V Collector current DC I C 2. Pulse I CP 3.5 Base current I B 2 ma Collector power dissipation t = 1 s P C (Note 1) 1.6 DC.8 Junction temperature T j 15 C Storage temperature range T stg ~15 C A W JEDEC JEITA TOSHIBA 2-3T1 Weight:.11 g (typ.) Note 1: Mounted on an FR4 board (glass epoxy, 1.6 mm thick, Cu area: 645 mm 2 ) Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ( Handling Precautions /Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1

Electrical Characteristics (Ta = C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current I CBO V CB = 2 V, I E = na Emitter cut-off current I EBO V EB = 7 V, I C = na Collector-emitter breakdown voltage V (BR) CEO I C = ma, I B = V DC current gain h FE (1) V CE = 2 V, I C =.2 A 2 5 h FE (2) V CE = 2 V, I C =.6 A 1 Collector-emitter saturation voltage V CE (sat) I C =.6 A, I B =.2 A 9 V Base-emitter saturation voltage V BE (sat) I C =.6 A, I B =.2 A.1 V Collector output capacitance C ob V CB = V, I E =, f = 1 MHz 12 pf Switching time Rise time t r See Figure 1 circuit diagram. 5 Storage time t stg V CC 6 V, R L = 1 Ω 115 Fall time t f I B1 = I B2 = 2 ma ns 2 μs V CC I B1 I B2 Input I B1 RL Output Duty cycle < 1% I B2 Figure 1 Switching Time Test Circuit & Timing Chart Circuit Configuration Marking 6 5 4 Lot code (month) Lot No Part No. (or abbreviation code) H3B Product-specific code 1 2 3 Pin #1 Lot code (year) A line indicates lead (Pb)-free package or lead (Pb)-free finish. 2

2.6.2.8.4 8 6 I C V CE 4 2 IB = 2 ma Ta = C.2.4.6.8.2 6 4 DC current gain hfe 1 1 1 VCE = 2 V h FE I C 1.1.1 Collector-emitter voltage V CE (V) Collector-emitter saturation voltage VCE (sat) (V).1 IC/IB = 3 V CE (sat) I C.1.1.1 Base-emitter saturation voltage VBE (sat) (V) IC/IB = 3 V BE (sat) I C.1.1 2.6.2.8.4 I C V BE VCE = 2 V.4.8.2.6 Base-emitter voltage V BE (V) 3

1 r th t w Transient thermal resistance rth (j-a) ( C/W) 1 1 Curves should be applied in thermal limited area. Single pulse Ta = C Mounted on an FR4 board (glass epoxy, 1.6 mm thick, 1 2.1.1.1 1 1 1 1 Pulse width t w (s) Safe Operating Area IC max (Pulse) * 1 ms* 1 ms* IC max (continuous) 1 ms* 1 s* DC operation (Ta = C) *: Single pulse Ta = C Note that the curves for 1 ms*, 1 s* and DC operation* will be different when the devices aren t mounted on an FR4 board (glass epoxy, 1.6 mm thick, Cu area: 645 mm 2 ). These characteristic curves must be derated linearly with increase in temperature..1 VCEO max Collector-emitter voltage V CE (V) 4

RESTRICTIONS ON PRODUCT USE 2771-EN The information contained herein is subject to change without notice. TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the Handling Guide for Semiconductor Devices, or TOSHIBA Semiconductor Reliability Handbook etc. The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).these TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ( Unintended Usage ). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer s own risk. The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 5