6V, 7A NChannel MOSFET with Fast Recovery Diode General Description The AOTF7N6FD has been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular ACDC applications. By providing low R DS(on), C iss and C rss along with guaranteed avalanche capability this part can be adopted quickly into new and existing offline power supply designs. For Halogen Free add "L" suffix to part number: AOTF7N6FDL Product Summary V DS I D (at V GS =V) 7V@5 7A R DS(ON) (at V GS =V) <.45Ω % UIS Tested % R g Tested Top View TO22F D AOTF7N6FD G D S G S Absolute Maximum Ratings T A =25 C unless otherwise noted Parameter Symbol AOTF7N6FD DrainSource Voltage 6 GateSource Voltage Continuous Drain Current T C = C Avalanche Current C Repetitive avalanche energy C Single pulsed avalanche energy G I DM I AR E AR E AS 24 3.5 84 368 Pulsed Drain Current C T C =25 C V DS V GS Peak diode recovery dv/dt dv/dt Power Dissipation B T C =25 C Derate above 25 o C P D Junction and Storage Temperature Range T J, T STG Maximum lead temperature for soldering purpose, /8" from case for 5 seconds T L Thermal Characteristics Parameter Maximum JunctiontoAmbient A,D Maximum JunctiontoCase Symbol R θja R θjc * Drain current limited by maximum junction temperature. I D ±3 7* 4.7* 5 39.3 55 to 5 3 AOTF7N6FD 65 3.25 Units V V A A mj mj V/ns W W/ o C C C Units C/W C/W Rev.2. July 23 www.aosmd.com Page of 6
Electrical Characteristics (T J =25 C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BV DSS BV DSS / TJ I DSS DrainSource Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current I D =ma, V GS =V, T J =25 C I D =ma, V GS =V, T J =5 C I D =ma, V GS =V V DS =6V, V GS =V V DS =48V, T J =25 C 6 7.68 V/ o C I GSS GateBody leakage current V DS =V, V GS =±3V ± nα V GS(th) Gate Threshold Voltage V DS =5V, I D =25µA 2.5 3.3 4.2 V R DS(ON) Static DrainSource OnResistance V GS =V, I D =3.5A.2.45 Ω g FS Forward Transconductance V DS =4V, I D =3.5A 7 S V SD Diode Forward Voltage I S =7A,V GS =V.3.6 V I S Maximum BodyDiode Continuous Current 7 A I SM Maximum BodyDiode Pulsed Current 24 A DYNAMIC PARAMETERS C iss Input Capacitance 6 826 995 pf C oss Output Capacitance V GS =V, V DS =25V, f=mhz 6 86 5 pf C rss Reverse Transfer Capacitance 4.5 7.9.5 pf R g Gate resistance V GS =V, V DS =V, f=mhz 2 4 6 Ω SWITCHING PARAMETERS Q g Total Gate Charge 5 2 25 nc Q gs Gate Source Charge V GS =V, V DS =48V, I D =7A 3.6 nc Q gd Gate Drain Charge 7.7 nc t D(on) TurnOn DelayTime 24 ns t r TurnOn Rise Time V GS =V, V DS =3V, I D =7A, 55 ns t D(off) TurnOff DelayTime R G=25ΩΩ 56 ns t f TurnOff Fall Time 42 ns t rr Body Diode Reverse Recovery Time I F =7A,dI/dt=A/µs,V DS =V 76 3 ns Q rr Body Diode Reverse Recovery Charge I F =7A,dI/dt=A/µs,V DS =V.3.5 µc A. The value of R θja is measured with the device in a still air environment with T A =25 C. B. The power dissipation P D is based on T J(MAX) =5 C, using junctiontocase thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature T J(MAX) =5 C, Ratings are based on low frequency and duty cycles to keep initial T J =25 C. D. The R θja is the sum of the thermal impedance from junction to case R θjc and case to ambient. E. The static characteristics in Figures to 6 are obtained using <3 µs pulses, duty cycle.5% max. F. These curves are based on the junctiontocase thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T J(MAX) =5 C. The SOA curve provides a single pulse rating. G. L=6mH, I AS =2.3A, =3.5A, V DD =5V, R G =25Ω, Starting T J =25 C V µa THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev.2. July 23 www.aosmd.com Page 2 of 6
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 5 2 V V DS =4V 55 C 9 6.5V I D (A) 6 6V 5.5V I D (A) 25 C 3 V GS =5V 25 C 5 5 2 25 3 V DS (Volts) Fig : OnRegion Characteristics. 2 4 6 8 V GS (Volts) Figure 2: Transfer Characteristics 3. 3 R DS(ON) (Ω) 2.5 2..5..5 V GS =V Normalized OnResistance 2.5 2.5.5 V GS =V I D =3.5A. 3 6 9 2 5 I D (A) Figure 3: OnResistance vs. Drain Current and Gate Voltage 5 5 5 2 Temperature ( C) Figure 4: OnResistance vs. Junction Temperature.2 E2 E BV DSS (Normalized)..9 I S (A) E E E2 E3 25 C 25 C E4.8 5 5 5 2 T J ( o C) Figure 5: Break Down vs. Junction Temperature E5..4.8.2.6 V SD (Volts) Figure 6: BodyDiode Characteristics (Note E) Rev.2. July 23 www.aosmd.com Page 3 of 6
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 5 2 V DS =48V I D =7A C iss V GS (Volts) 9 6 3 Capacitance (pf) C oss C rss 8 6 24 32 4 Q g (nc) Figure 7: GateCharge Characteristics. V DS (Volts) Figure 8: Capacitance Characteristics I D (Amps).. R DS(ON) limited T J(Max) =5 C T C =25 C DC µs µs ms ms.s s Current rating I D (A) 8 6 4 2 25 5 75 25 5 V DS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area for AOTF7N6FD (Note F) T CASE ( o C) Figure : Current Derating (Note B) Z θjc Normalized Transient Thermal Resistance.. D=T on /T T J,PK =T C P DM.Z θjc.r θjc R θjc =3.25 C/W Single Pulse In descending order D=.5,.3,.,.5,.2,., single pulse P D T on T...... Pulse Width (s) Figure : Normalized Maximum Transient Thermal Impedance for AOTF7N6FD (Note F) Rev.2. July 23 www.aosmd.com Page 4 of 6
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 5 5 AOTF7N6FD V DS =V I F =7A di/dt=a/µs I F (A) 5 5 AOTF7N6 2 8 6 4 2 2 4 6 8 2 Trr (ns) Figure 2: Diode Recovery Characteristics Rev.2. July 23 www.aosmd.com Page 5 of 6
Gate Charge Test Circuit & Waveform Qg V Qgs Qgd Ig Charge Resistive Switching Test Circuit & Waveforms RL Rg 9% % t d(on) t r t d(off) t f t on t off Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 E = /2 LI AR AR BV DSS Id Rg Id I AR Diode Recovery Test Circuit & Waveforms Q = Idt rr Ig Isd L Isd I F di/dt I RM t rr Rev.2. July 23 www.aosmd.com Page 6 of 6