MOSFET 600VCoolMOSªCEPowerTransistor CoolMOS isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principleand pioneeredbyinfineontechnologies.coolmos CEisa priceperformanceoptimizedplatformenablingtotargetcostsensitive applicationsinconsumerandlightingmarketsbystillmeetinghighest efficiencystandards.thenewseriesprovidesallbenefitsofafast switchingsuperjunctionmosfetwhilenotsacrificingeaseofuseand offeringthebestcostdownperformanceratioavailableonthemarket. PGSOT223 Features ExtremelylowlossesduetoverylowFOMRdson*QgandEoss Veryhighcommutationruggedness Easytouse/drive Pbfreeplating,Halogenfreemoldcompound Qualifiedforstandardgradeapplications Applications Adapter,ChargerandLighting Gate Pin 1 Drain Pin 2 Source Pin 3 Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate orseperatetotempolesisgenerallyrecommended. Table1KeyPerformanceParameters Parameter Value Unit VDS @ Tj,max 650 V RDS(on),max 3.4 Ω Qg,typ 4.6 nc ID,pulse 3.9 A Eoss@400V 0.57 µj Body diode di/dt 500 A/µs Type/OrderingCode Package Marking RelatedLinks PGSOT223 60S3K4 see Appendix A 1 Rev.2.0,20160429
TableofContents Description............................................................................. 1 Maximum ratings........................................................................ 3 Thermal characteristics.................................................................... 3 Electrical characteristics................................................................... 4 Electrical characteristics diagrams........................................................... 6 Test Circuits........................................................................... 10 Package Outlines....................................................................... 11 Appendix A............................................................................ 12 Revision History........................................................................ 13 Trademarks........................................................................... 13 Disclaimer............................................................................ 13 2 Rev.2.0,20160429
1Maximumratings attj=25 C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Values Min. Typ. Max. Unit Note/TestCondition Continuous drain current 1) ID 2.6 1.6 A TC = 25 C TC = 100 C Pulsed drain current 2) ID,pulse 3.9 A TC = 25 C Avalanche energy, single pulse EAS 6 mj ID = 0.3A; VDD = 50V Avalanche energy, repetitive EAR 0.04 mj ID = 0.3A; VDD = 50V Avalanche current, repetitive IAR 0.3 A MOSFET dv/dt ruggedness dv/dt 50 V/ns VDS=0...480V Gate source voltage VGS 20 30 20 30 V static; AC (f>1 Hz) Power dissipation Ptot 5.0 W TC=25 C Operating and storage temperature Tj,Tstg 40 150 C Continuous diode forward current IS 0.8 A TC=25 C Diode pulse current 2) IS,pulse 3.9 A TC = 25 C Reverse diode dv/dt 3) dv/dt 15 V/ns VDS=0...400V,ISD<=IS,Tj=25 C Maximum diode commutation speed 3) dif/dt 500 A/µs VDS=0...400V,ISD<=IS,Tj=25 C 2Thermalcharacteristics Table3Thermalcharacteristics Values Parameter Symbol Unit Note/TestCondition Min. Typ. Max. Thermal resistance, junction solder point Thermal resistance, junction ambient for minimal footprint Thermal resistance, junction ambient soldered on copper area Soldering temperature, wavesoldering only allowed at leads RthJS 25.2 C/W RthJA 160 C/W minimal footprint RthJA 75 C/W Tsold 260 C reflow MSL3 Device on 40mm*40mm*1.5 epoxy PCB FR4 with 6cm 2 (one layer 70µm thick) copper area for drain connection and cooling. PCB is vertical without blown air. 1) DPAK equivalent. Limited by Tj max. Maximum duty cycle D=0.5 2) Pulse width tp limited by Tj,max 3) VDClink=400V;VDS,peak<V(BR)DSS;identicallowsideandhighsideswitchwithidenticalRG 3 Rev.2.0,20160429
3Electricalcharacteristics Table4Staticcharacteristics Parameter Symbol Values Min. Typ. Max. Unit Note/TestCondition Drainsource breakdown voltage V(BR)DSS 600 V VGS=0V,ID=0.25mA Gate threshold voltage VGS(th) 2.50 3 3.50 V VDS=VGS,ID=0.04mA Zero gate voltage drain current IDSS 10 1 µa VDS=600V,VGS=0V,Tj=25 C VDS=600V,VGS=0V,Tj=150 C Gatesource leakage curent IGSS 100 na VGS=20V,VDS=0V Drainsource onstate resistance RDS(on) 3.06 7.96 3.40 Ω VGS=10V,ID=0.5A,Tj=25 C VGS=10V,ID=0.5A,Tj=150 C Gate resistance RG 15 Ω f=1mhz,opendrain Table5Dynamiccharacteristics Values Parameter Symbol Unit Note/TestCondition Min. Typ. Max. Input capacitance Ciss 93 pf VGS=0V,VDS=100V,f=1MHz Output capacitance Coss 9 pf VGS=0V,VDS=100V,f=1MHz Effective output capacitance, energy related 1) Co(er) 6.4 pf VGS=0V,VDS=0...480V Effective output capacitance, time related 2) Co(tr) 21 pf ID=constant,VGS=0V,VDS=0...480V Turnon delay time td(on) 8 ns Rise time tr 10 ns Turnoff delay time td(off) 40 ns Fall time tf 60 ns VDD=400V,VGS=13V,ID=0.6A, RG=20Ω VDD=400V,VGS=13V,ID=0.6A, RG=20Ω VDD=400V,VGS=13V,ID=0.6A, RG=20Ω VDD=400V,VGS=13V,ID=0.6A, RG=20Ω Table6Gatechargecharacteristics Values Parameter Symbol Unit Note/TestCondition Min. Typ. Max. Gate to source charge Qgs 0.5 nc VDD=480V,ID=0.6A,VGS=0to10V Gate to drain charge Qgd 2.6 nc VDD=480V,ID=0.6A,VGS=0to10V Gate charge total Qg 4.6 nc VDD=480V,ID=0.6A,VGS=0to10V Gate plateau voltage Vplateau 5.4 V VDD=480V,ID=0.6A,VGS=0to10V 1) Co(er)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfrom0to480V 2) Co(tr)isafixedcapacitancethatgivesthesamechargingtimeasCosswhileVDSisrisingfrom0to480V 4 Rev.2.0,20160429
Table7Reversediodecharacteristics Values Parameter Symbol Unit Note/TestCondition Min. Typ. Max. Diode forward voltage VSD 0.9 V VGS=0V,IF=0.6A,Tf=25 C Reverse recovery time trr 160 ns VR=400V,IF=0.6A,diF/dt=100A/µs Reverse recovery charge Qrr 0.42 µc VR=400V,IF=0.6A,diF/dt=100A/µs Peak reverse recovery current Irrm 5.1 A VR=400V,IF=0.6A,diF/dt=100A/µs 5 Rev.2.0,20160429
4Electricalcharacteristicsdiagrams Diagram1:Powerdissipation 6 Diagram2:Safeoperatingarea 10 1 1 µs 5 10 µs 10 0 100 µs 4 1 ms Ptot[W] 3 ID[A] 10 1 DC 10 ms 2 10 2 1 0 0 25 50 75 100 125 150 TC[ C] Ptot=f(TC) 10 3 10 0 10 1 10 2 10 3 VDS[V] ID=f(VDS);TC=25 C;D=0;parameter:tp Diagram3:Safeoperatingarea 10 1 Diagram4:Max.transientthermalimpedance 10 2 1 µs 10 0 100 µs 10 µs 10 1 0.5 0.2 1 ms 0.1 ID[A] 10 1 DC 10 ms ZthJC[K/W] 10 0 0.05 0.02 0.01 10 2 10 1 single pulse 10 3 10 0 10 1 10 2 10 3 VDS[V] ID=f(VDS);TC=80 C;D=0;parameter:tp 10 2 10 5 10 4 10 3 10 2 10 1 10 0 10 1 tp[s] ZthJC=f(tP);parameter:D=tp/T 6 Rev.2.0,20160429
Diagram5:Typ.outputcharacteristics Diagram6:Typ.outputcharacteristics 4.5 4.0 20 V 10 V 3.0 2.5 20 V 10 V 8 V 3.5 8 V 3.0 2.0 7 V ID[A] 2.5 2.0 7 V ID[A] 1.5 6 V 1.5 6 V 1.0 5.5 V 1.0 0.5 5.5 V 5 V 4.5 V 0.5 5 V 4.5 V 0.0 0 5 10 15 20 VDS[V] ID=f(VDS);Tj=25 C;parameter:VGS 0.0 0 5 10 15 20 VDS[V] ID=f(VDS);Tj=125 C;parameter:VGS Diagram7:Typ.drainsourceonstateresistance 9.0 Diagram8:Drainsourceonstateresistance 9 8.5 5 V 5.5 V 6 V 6.5 V 7 V 10 V 8 8.0 7 7.5 6 RDS(on)[Ω] 7.0 6.5 RDS(on)[Ω] 5 4 3 98% typ 6.0 2 5.5 1 5.0 0 1 2 3 ID[A] RDS(on)=f(ID);Tj=125 C;parameter:VGS 0 50 25 0 25 50 75 100 125 150 Tj[ C] RDS(on)=f(Tj);ID=0.5A;VGS=10V 7 Rev.2.0,20160429
Diagram9:Typ.transfercharacteristics Diagram10:Typ.gatecharge 5.0 10 4.5 9 4.0 3.5 25 C 8 7 120 V 480 V 3.0 6 ID[A] 2.5 VGS[V] 5 2.0 150 C 4 1.5 3 1.0 2 0.5 1 0.0 0 2 4 6 8 10 12 VGS[V] ID=f(VGS);VDS=20V;parameter:Tj 0 0 1 2 3 4 5 Qgate[nC] VGS=f(Qgate);ID=0.6Apulsed;parameter:VDD Diagram11:Forwardcharacteristicsofreversediode 10 2 25 C 125 C Diagram12:Avalancheenergy 7 6 10 1 5 IF[A] EAS[mJ] 4 3 10 0 2 1 10 1 0.0 0.5 1.0 1.5 2.0 VSD[V] IF=f(VSD);parameter:Tj 0 25 50 75 100 125 150 Tj[ C] EAS=f(Tj);ID=0.3A;VDD=50V 8 Rev.2.0,20160429
Diagram13:Drainsourcebreakdownvoltage 700 Diagram14:Typ.capacitances 10 4 680 660 10 3 VBR(DSS)[V] 640 620 600 C[pF] 10 2 10 1 Ciss Coss 580 560 10 0 Crss 540 520 75 50 25 0 25 50 75 100 125 150 175 Tj[ C] VBR(DSS)=f(Tj);ID=0.25mA 10 1 0 100 200 300 400 500 VDS[V] C=f(VDS);VGS=0V;f=1MHz Diagram15:Typ.Cossstoredenergy 1.2 1.0 0.8 Eoss[µJ] 0.6 0.4 0.2 0.0 0 100 200 300 400 500 600 VDS[V] Eoss=f(VDS) 9 Rev.2.0,20160429
5TestCircuits Table8Diodecharacteristics Test circuit for diode characteristics Diode recovery waveform R g 1 V,I (peak) R g 2 I F di F / dt t F t rr t S I F t I F R g 1 = R g 2 I rrm Q F Q S di rr / dt 10 %I rrm t rr =t F +t S Q rr = Q F +Q S Table9Switchingtimes Switching times test circuit for inductive load Switching times waveform 90% V GS V GS 10% t d(on) t r t d(off) t f t on t off Table10Unclampedinductiveload Unclamped inductive load test circuit Unclamped inductive waveform V (BR)DS I D I D 10 Rev.2.0,20160429
6PackageOutlines DOCUMENT NO. Z8B00180553 DIM MILLIMETERS INCHES MIN MAX MIN MAX A 1.52 1.80 0.060 0.071 A1 0.10 0.004 A2 1,50 1.70 0.059 0.067 b 0.60 0.80 0.031 b2 2.95 3.10 0.122 c 0.24 0.32 0.013 D E E1 e e1 L N O 6.30 6.70 3.30 6.70 7.30 0.024 0.116 0.009 0.248 0.264 0.287 0.264 3.70 0.130 0.146 2.3 BASIC 4.6 BASIC 0.091 BASIC 0.181 BASIC 0.75 1.10 0.030 0.043 3 3 0 10 0 10 SCALE 0 2.5 EUROPEAN PROJECTION 0 2.5 ISSUE DATE 24022016 REVISION 01 5mm Figure1OutlinePGSOT223,dimensionsinmm/inches 11 Rev.2.0,20160429
7AppendixA Table11RelatedLinks IFXCoolMOSWebpage:www.infineon.com IFXDesigntools:www.infineon.com 12 Rev.2.0,20160429
RevisionHistory Revision:20160429,Rev.2.0 Previous Revision Revision Date Subjects (major changes since last revision) 2.0 20160429 Release of final version TrademarksofInfineonTechnologiesAG AURIX,C166,CanPAK,CIPOS,CoolGaN,CoolMOS,CoolSET,CoolSiC,CORECONTROL,CROSSAVE,DAVE,DIPOL,DrBlade, EasyPIM,EconoBRIDGE,EconoDUAL,EconoPACK,EconoPIM,EiceDRIVER,eupec,FCOS,HITFET,HybridPACK,Infineon, ISOFACE,IsoPACK,iWafer,MIPAQ,ModSTACK,myd,NovalithIC,OmniTune,OPTIGA,OptiMOS,ORIGA,POWERCODE, PRIMARION,PrimePACK,PrimeSTACK,PROFET,PROSIL,RASIC,REAL3,ReverSave,SatRIC,SIEGET,SIPMOS,SmartLEWIS, SOLIDFLASH,SPOC,TEMPFET,thinQ,TRENCHSTOP,TriCore. TrademarksupdatedAugust2015 OtherTrademarks Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.pleasesendyourproposal(includingareferencetothisdocument)to: erratum@infineon.com Publishedby InfineonTechnologiesAG 81726München,Germany 2016InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics.With respecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplication ofthedevice,infineontechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithout limitation,warrantiesofnoninfringementofintellectualpropertyrightsofanythirdparty. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestinfineontechnologiesoffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlifesupportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofinfineontechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlifesupport,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. 13 Rev.2.0,20160429