PD-9792C RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-.2) Product Summary IRHNM57 JANSR2N753U8 V, N-CHANNEL REF: MIL-PRF-95/743 5 TECHNOLOGY Part Number Radiation Level RDS(on) ID QPL Part Number IRHNM57 K Rads (Si).22Ω 6.9A JANSR2N753U8 IRHNM53 3K Rads (Si).22Ω 6.9A JANSF2N753U8 Refer to Page for Additional Part Number - IRHNMC57 (Ceramic Lid) International Rectifier s R5 TM technology provides high performance power MOSFETs for space applications. These devices have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 8 (MeV/ (mg/cm 2 )). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters. SMD-.2 (METAL LID) Features: n Single Event Effect (SEE) Hardened n Low RDS(on) n Low Total Gate Charge n Simple Drive Requirements n Ease of Paralleling n Hermetically Sealed n Surface Mount n Ceramic Package n Light Weight n Complimentary P-Channel Available - IRHNM597, IRHNMC597 Absolute Maximum Ratings Parameter ID @ VGS = 2V, TC = 25 C Continuous Drain Current 6.9 ID @ VGS = 2V, TC = C Continuous Drain Current 4.4 IDM Pulsed Drain Current 27.6 Units PD @ TC = 25 C Max. Power Dissipation 23 W Linear Derating Factor.8 W/ C VGS Gate-to-Source Voltage ±2 V EAS Single Pulse Avalanche Energy 24 mj IAR Avalanche Current 6.9 A EAR Repetitive Avalanche Energy 2.3 mj dv/dt Peak Diode Recovery dv/dt ƒ.5 V/ns TJ Operating Junction -55 to 5 TSTG Storage Temperature Range Lead Temperature 3 (for 5s) C Weight.25 (Typical) g For footnotes refer to the last page www.irf.com 2/6/2 A
IRHNM57, JANSR2N753U8 Electrical Characteristics @ Tj = 25 C (Unless Otherwise Specified) Parameter Min Typ Max Units Test Conditions BVDSS Drain-to-Source Breakdown Voltage V VGS = V, ID =.ma BVDSS/ TJ Temperature Coefficient of Breakdown.3 V/ C Reference to 25 C, ID =.ma Voltage RDS(on) Static Drain-to-Source On-State.22 Ω VGS = 2V, ID = 4.4A Ã Resistance VGS(th) Gate Threshold Voltage 2. 4. V VDS = VGS, ID =.ma VGS(th)/ TJ Gate Threshold Voltage Coefficient -7.5 mv/ C gfs Forward Transconductance 3.6 S VDS = 5V, IDS = 4.4A Ã IDSS Zero Gate Voltage Drain Current VDS= 8V,VGS = V 25 µa VDS = 8V, VGS = V, TJ = 25 C IGSS Gate-to-Source Leakage Forward na VGS = 2V IGSS Gate-to-Source Leakage Reverse - VGS = -2V Qg Total Gate Charge 5 VGS = 2V, ID = 6.9A Qgs Gate-to-Source Charge 4. nc VDS = 5V Qgd Gate-to-Drain ( Miller ) Charge 5. td(on) Turn-On Delay Time 6.6 VDD = 5V, ID = 6.9A, tr Rise Time 5.4 VGS = 2V, RG = 7.5Ω ns td(off) Turn-Off Delay Time 34 tf Fall Time 5 LS + LD Total Inductance 6.8 nh Measured from the center of drain pad to center of source pad Ciss Input Capacitance 378 VGS = V, VDS = 25V Coss Output Capacitance 8 pf f = KHz Crss Reverse Transfer Capacitance 2.3 Rg Gate Resistance 8. Ω f =.MHz, open drain Source-Drain Diode Ratings and Characteristics Parameter Min Typ Max Units Test Conditions IS Continuous Source Current (Body Diode) 6.9 ISM Pulse Source Current (Body Diode) 27.6 A VSD Diode Forward Voltage.2 V Tj = 25 C, IS = 6.9A, VGS = V trr Reverse Recovery Time 44 ns Tj = 25 C, IF = 6.9A, di/dt A/µs QRR Reverse Recovery Charge 633 nc VDD 5V ton Forward Turn-On Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. Thermal Resistance Parameter Min Typ Max Units Test Conditions RthJC Junction-to-Case 5.4 C/W Note: Corresponding Spice and Saber models are available on International Rectifier Web site. For footnotes refer to the last page 2 www.irf.com
Radiation Characteristics IRHNM57, JANSR2N753U8 International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at International Rectifier is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison. Table. Electrical Characteristics @ Tj = 25 C, Post Total Dose Irradiation Parameter Up to 3K Rads (Si) Units Test Conditions Min Max BV DSS Drain-to-Source Breakdown Voltage V V GS = V, I D =.ma VGS(th) Gate Threshold Voltage 2. 4. VGS = V DS, I D =.ma I GSS Gate-to-Source Leakage Forward na V GS = 2V I GSS Gate-to-Source Leakage Reverse - V GS = -2V I DSS Zero Gate Voltage Drain Current µa V DS = 8V, V GS = V R DS(on) Static Drain-to-Source On-State Resistance (TO-3).226 Ω VGS = 2V, I D = 4.4A R DS(on) Static Drain-to-Source On-state Resistance (SMD-.2).22 Ω VGS = 2V, I D = 4.4A V SD Diode Forward Voltage.2 V VGS = V, I D = 6.9A. Part Numbers IRHNM57, IRHNM53. Additional part numbers ae listed on page. International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2. Table 2. Typical Single Event Effect Safe Operating Area LET Energy Range VDS (V) (MeV/(mg/cm 2 )) (MeV) (µm) @VGS = @VGS = @VGS = @VGS = @VGS = V -5V -V -5V -2V 38 ± 5% 3 ± 7.5% 38 ± 7.5% 6 ± 5% 33 ± 7.5% 3 ± % 35 25 84 ± 5% 35 ± % 28 ± 7.5% 8 25 - Bias VDS (V) 2 8 6 4 2-5 - Bias VGS (V) -5-2 LET=38 ± 5% LET=6 ± 5% LET=84 ± 5% For footnotes refer to the last page Fig a. Typical Single Event Effect, Safe Operating Area www.irf.com 3
I D, Drain-to-Source Current (A) R DS(on), Drain-to-Source On Resistance (Normalized) I D, Drain-to-Source Current (A) I D, Drain-to-Source Current (A) IRHNM57, JANSR2N753U8 VGS TOP 5V 2V V 9.V 8.V 7.V 6.V BOTTOM 5.V 5.V VGS TOP 5V 2V V 9.V 8.V 7.V 6.V BOTTOM 5.V 5.V 2µs PULSE WIDTH Tj = 25 C.. V DS, Drain-to-Source Voltage (V) 2µs PULSE WIDTH Tj = 5 C.. V DS, Drain-to-Source Voltage (V) Fig. Typical Output Characteristics Fig 2. Typical Output Characteristics 2.5 I D = 6.9A T J = 25 C 2. T J = 5 C.5.. V DS = 5V 2µs PULSE 5 WIDTH 5 7 9 3 5.5 V GS = 2V. -6-4 -2 2 4 6 8 2 4 6 V GS, Gate-to-Source Voltage (V) T J, Junction Temperature ( C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature 4 www.irf.com
V (BR)DSS, Drain-to-Source Breakdown Voltage (V) V GS(th) Gate threshold Voltage (V) R DS(on), Drain-to -Source On Resistance ( Ω) IRHNM57, JANSR2N753U8.6.4.2 I D = 6.9A. R DS (on), Drain-to -Source On Resistance ( Ω).8.6 T J = 5 C.8.6 T J = 5 C.4 T J = 25 C.4.2.2 T J = 25 C 4 6 8 2 4 6 Vgs = 2V 2 4 6 8 2 4 6 V GS, Gate -to -Source Voltage (V) I D, Drain Current (A) Fig 5. Typical On-Resistance Vs Gate Voltage Fig 6. Typical On-Resistance Vs Drain Current 4 4 I D =.ma 3 3 2 2 I D = 5µA I D = 25µA I D =.ma I D = 5mA -6-4 -2 2 4 6 8 2 4 6 T J, Temperature ( C ) -6-4 -2 2 4 6 8 2 4 6 T J, Temperature ( C ) Fig 7. Typical Drain-to-Source Breakdown Voltage Vs Temperature Fig 8. Typical Threshold Voltage Vs Temperature www.irf.com 5
C, Capacitance (pf) I SD, Reverse Drain Current (A) I D, Drain Current (A) V GS, Gate-to-Source Voltage (V) IRHNM57, JANSR2N753U8 8 7 6 V GS = V, f = MHz C iss = C gs + C gd, C ds SHORTED C rss = C gd C oss = C ds + C gd 2 6 I D = 6.9A V DS = 8V V DS = 5V V DS = 2V 5 4 C iss 2 3 C oss 8 2 C rss V DS, Drain-to-Source Voltage (V) 4 FOR TEST CIRCUIT SEE FIGURE 7 2 4 6 8 2 4 6 Q G, Total Gate Charge (nc) Fig 9. Typical Capacitance Vs. Drain-to-Source Voltage Fig. Typical Gate Charge Vs. Gate-to-Source Voltage 7 6 T J = 5 C 5 T J = 25 C 4 3. V GS = V..2.4.6.8..2.4.6 V SD, Source-to-Drain Voltage (V) 2 25 5 75 25 5 T C, Case Temperature ( C) Fig. Typical Source-Drain Diode Forward Voltage Fig 2. Maximum Drain Current Vs. Case Temperature 6 www.irf.com
I D, Drain-to-Source Current (A) E AS, Single Pulse Avalanche Energy (mj) IRHNM57, JANSR2N753U8 OPERATION IN THIS AREA LIMITED BY R DS (on) 5 4 I D TOP 3.A 4.4A BOTTOM 6.9A 3 µs 2. Tc = 25 C Tj = 5 C Single Pulse ms ms DC 25 5 75 25 5 V DS, Drain-to-Source Voltage (V) Starting T J, Junction Temperature ( C) Fig 3. Maximum Safe Operating Area Fig 4. Maximum Avalanche Energy Vs. Drain Current D =.5 Thermal Response ( Z thjc ).2 P DM. t.5 t 2 SINGLE PULSE.2 ( THERMAL RESPONSE ). Notes:. Duty Factor D = t/t2 2. Peak Tj = P dm x Zthjc + Tc. E-5.... t, Rectangular Pulse Duration (sec) Fig 5. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com 7
IRHNM57, JANSR2N753U8 V (BR)DSS 5V tp VDS L DRIVER R G 2V V GS tp. D.U.T I AS.Ω + - V DD A I AS Fig 6a. Unclamped Inductive Test Circuit Fig 6b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 4.5V Q G 2V.2µF 5KΩ.3µF Q GS Q GD D.U.T. + V - DS V G V GS 3mA Charge Fig 7a. Basic Gate Charge Waveform I G I D Current Sampling Resistors Fig 7b. Gate Charge Test Circuit V GS V DS R D V DS 9% R G D.U.T. + - V DD V GS Pulse Width µs Duty Factor. % % V GS t d(on) t r t d(off) t f Fig 8a. Switching Time Test Circuit Fig 8b. Switching Time Waveforms 8 www.irf.com
IRHNM57, JANSR2N753U8 Case Outline and Dimensions SMD-.2 ( Metal Lid) NOTES:. DIMENSIONING & TOLERANCING PER ASME Y4.5M-994. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES]. PAD ASSIGNMENT = DRAIN 2 = GATE 3 = SOURCE Case Outline and Dimensions SMD-.2 (Ceramic Lid) NOTES:. DIMENSIONING & TOLERANCING PER ASME Y4.5M-994. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES]. PAD ASSIGNMENT = DRAIN 2 = GATE 3 = SOURCE www.irf.com 9
IRHNM57, JANSR2N753U8 Footnotes: Repetitive Rating; Pulse width limited by maximum junction temperature. VDD = 5V, starting TJ = 25 C, L=. mh Peak IL = 6.9A, VGS = 2V ƒ ISD 6.9A, di/dt 56A/µs, VDD V, TJ 5 C Pulse width 3 µs; Duty Cycle 2% Total Dose Irradiation with VGS Bias. 2 volt VGS applied and VDS = during irradiation per MIL-STD-75, method 9, condition A. Total Dose Irradiation with VDS Bias. 8 volt VDS applied and VGS = during irradiation per MlL-STD-75, method 9, condition A. Additional Product Summary (continued from page and 3) Product Summary Part Number Radiation Level RDS(on) ID QPL Part Number IRHNMC57 K Rads (Si).22Ω 6.9A JANSR2N753U8C IRHNMC53 3K Rads (Si).22Ω 6.9A JANSF2N753U8C SMD-.2 ( CERAMIC LID ) IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 9245, USA Tel: (3) 252-75 IR LEOMINSTER : 25 Crawford St., Leominster, Massachusetts 453, USA Tel: (978) 534-5776 TAC Fax: (3) 252-793 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 2/22 www.irf.com