Dual N-Channel 3 V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) ( ) I D (A) Q g (Typ.) 3. at V GS = V 2..7 at V GS =.5 V 5. nc SO-8 S 8 D G 2 7 D FEATURES Halogen-free According to IEC 29-2-2 Definition TrenchFET Power MOSFET % R g Tested % UIS Tested Compliant to RoHS Directive 22/95/EC APPLICATIONS Synchronous Buck - Notebooks - Servers - STB D D 2 S 2 3 D 2 G 2 5 D 2 G G 2 Top View Ordering Information: Si22DY-T-GE3 (Lead (Pb)-free and Halogen-free) S N-Channel MOSFET S 2 N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (T A = 25 C, unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage V DS 3 V Gate-Source Voltage V GS ± 2 T C = 25 C 2. T C = 7 C Continuous Drain Current (T J = 5 C) I D T A = 25 C 9.7 a, b T A = 7 C 8.2 a, b A Pulsed Drain Current I DM 5 T C = 25 C 3. Continuous Source Drain Diode Current I S T A = 25 C 2 a, b Avalanche Current I AS 5 L = mh Single-Pulse Avalanche Energy E AS.25 mj T C = 25 C 3.7 T C = 7 C 2. Maximum Power Dissipation P D W T A = 25 C 2. a, b Notes: a. Surface mounted on " x " FR board. b. t = s. c. Maximum under steady state conditions is C/W. T A = 7 C Operating Junction and Storage Temperature Range T J, T stg - 55 to 5 C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambient a, c t s R thja 5 2.5 C/W Maximum Junction-to-Foot (Drain) Steady State R thjf 33.7 a, b S-22-Rev. A, 5-Nov-
SPECIFICATIONS (T J = 25 C, unless otherwise noted) Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage V DS V GS = V, I D = 25 µa 3 V V DS Temperature Coefficient V DS /T J 33 I D = 25 µa V GS(th) Temperature Coefficient V GS(th) /T J - 5.3 mv/ C Gate-Source Threshold Voltage V GS(th) V DS = V GS, I D = 25 µa. 2.5 V Gate-Source Leakage I GSS V DS = V, V GS = ± 2 V ± na V DS = 3 V, V GS = V Zero Gate Voltage Drain Current I DSS V DS = 3 V, V GS = V, T J = 55 C µa On-State Drain Current a I D(on) V DS 5 V, V GS = V 2 A V GS = V, I D = 8 A Drain-Source On-State Resistance a.5. R DS(on) V GS =.5 V, I D = 5 A.38.7 Forward Transconductance a g fs V DS = 5 V, I D = 8 A 33 S Dynamic b Input Capacitance C iss V DS = 5 V, V GS = V, f = MHz 7 Output Capacitance C oss Reverse Transfer Capacitance C rss 3 V DS = 5 V, V GS = V, I D = 8 A.2 7 Total Gate Charge Q g 5. 8 nc Gate-Source Charge Q gs V DS = 5 V, V GS =.5 V, I D = 8 A. Gate-Drain Charge Q gd. Gate Resistance R g f = MHz.5 2.5 5 Turn-On Delay Time t d(on) 22 Rise Time t r V DD = 5 V, R L = 3 8 35 Turn-Off Delay Time t d(off) I D 5 A, V GEN =.5 V, R g = 28 Fall Time t f 8 Turn-On Delay Time t d(on) 8 ns Rise Time t r V DD = 5 V, R L = 3 9 8 Turn-Off Delay Time t d(off) I D 5 A, V GEN = V, R g = 7 3 Fall Time t f 8 Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current I S T C = 25 C 3. Pulse Diode Forward Current a I SM 5 A Body Diode Voltage V SD I S = 3 A.75.2 V Body Diode Reverse Recovery Time t rr 3 2 ns Body Diode Reverse Recovery Charge Q rr 5.5 nc I F = 5 A, di/dt = A/µs, T J = 25 C Reverse Recovery Fall Time t a 8 ns Reverse Recovery Rise Time t b 5 Notes: a. Pulse test; pulse width 3 µs, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. pf 2 S-22-Rev. A, 5-Nov-
TYPICAL CHARACTERISTICS (25 C, unless otherwise noted) 5 V GS =VthruV 8 3 2 V GS =3V T C = 25 C V GS =2V..5..5 2. 2.5 2 T C = 25 C T C = - 55 C 2 3 5 V DS - Drain-to-Source Voltage (V) Output Characteristics V GS - Gate-to-Source Voltage (V) Transfer Characteristics.2 R DS(on) - On-Resistance (Ω).8...2 V GS =.5V V GS =V C - Capacitance (pf) 8 2 C oss C iss. 2 3 5 On-Resistance vs. Drain Current C rss 2 8 2 3 V DS - Drain-to-Source Voltage (V) Capacitance 2. I D =8A I D =8A V GS - Gate-to-Source Voltage (V) 8 2 V DS =5V V DS =V V DS =2V R DS(on) - On-Resistance (Normalized).7...8 V GS =V V GS =.5V. 2..8 7.2 9. 2. Q g - Total Gate Charge (nc) Gate Charge.5-5 - 25 25 5 75 25 5 T J - Junction Temperature ( C) On-Resistance vs. Junction Temperature S-22-Rev. A, 5-Nov- 3
TYPICAL CHARACTERISTICS (25 C, unless otherwise noted). I D =8A I S - Source Current (A).. T J = 5 C T J = 25 C R DS(on) - On-Resistance (Ω).8.3.2.2 T J = 25 C T J =25 C...2...8..2 V SD - Source-to-Drain Voltage (V) Source-Drain Diode Forward Voltage. 2 3 5 7 8 9 V GS - Gate-to-Source Voltage (V) On-Resistance vs. Gate-to-Source Voltage. 3.2 25 V GS(th) Variance (V). -.2 -. I D = 25 μa I D =5mA Power (W) 2 5 -. 5 -.8-5 - 25 25 5 75 25 5 T J - Temperature ( C) Threshold Voltage. Time (s) Single Pulse Power, Junction-to-Ambient Limited by R DS(on) * ms ms ms. T A = 25 C Single Pulse BVDSS Limited s s DC... V DS - Drain-to-Source Voltage (V) * V GS > minimum V GS at which R DS(on) is specified Safe Operating Area S-22-Rev. A, 5-Nov-
TYPICAL CHARACTERISTICS (25 C, unless otherwise noted) 2 8 2 25 5 75 25 5 T C - Case Temperature ( C) Current Derating*..5 3.2.2 Power (W) 2.. Power (W).9..8.3. 25 5 75 25 5. 25 5 75 25 5 T C - Case Temperature ( C) Power, Junction-to-Case T A - Ambient Temperature ( C) Power, Junction-to-Ambient * The power dissipation P D is based on T J(max) = 5 C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. S-22-Rev. A, 5-Nov- 5
TYPICAL CHARACTERISTICS (25 C, unless otherwise noted) Duty Cycle =.5 Normalized Effective Transient Thermal Impedance..2..5.2 3. T JM -T A =P DM Z (t) thja. Single Pulse. Surface Mounted - -3-2 - Notes: Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient P DM t t 2 t. Duty Cycle, D = t 2 2. Per Unit Base = R thja = C/W Normalized Effective Transient Thermal Impedance. Duty Cycle =.5.2..5.2. - Single Pulse -3-2 - Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see /ppg?792. S-22-Rev. A, 5-Nov-
Package Information SOIC (NARROW): 8-LEAD JEDEC Part Number: MS-2 8 7 5 E H 2 3 S D A.25 mm (Gage Plane) h x 5 C All Leads e B A L q. mm." MILLIMETERS INCHES DIM Min Max Min Max A.35.75.53.9 A..2..8 B.35.5..2 C.9.25.75. D.8 5..89.9 E 3.8..5.57 e.27 BSC.5 BSC H 5.8.2.228.2 h.25.5..2 L.5.93.2.37 q 8 8 S...8.2 ECN: C-527-Rev. I, -Sep- DWG: 598 Document Number: 792 -Sep-
Application Note 82 RECOMMENDED MINIMUM PADS FOR SO-8.72 (.39).28 (.7) APPLICATION NOTE.7 (.9).2 (.28).52 (3.8).22 (.559).5 (.27) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Return to Index Document Number: 72 22 Revision: 2-Jan-8
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