1ps passively mode-locked laser operation of Na,Yb:CaF 2 crystal

Similar documents
Passive mode-locking performance with a mixed Nd:Lu 0.5 Gd 0.5 VO 4 crystal

Vertical External Cavity Surface Emitting Laser

Quantum-Well Semiconductor Saturable Absorber Mirror

A 100 W all-fiber linearly-polarized Yb-doped single-mode fiber laser at 1120 nm

Stable laser-diode pumped microchip sub-nanosecond Cr,Yb:YAG self-q-switched laser

High-power diode-end-pumped laser with multisegmented Nd-doped yttrium vanadate

A CW seeded femtosecond optical parametric amplifier

Elimination of Self-Pulsations in Dual-Clad, Ytterbium-Doped Fiber Lasers

High power VCSEL array pumped Q-switched Nd:YAG lasers

101 W of average green beam from diode-side-pumped Nd:YAG/LBO-based system in a relay imaged cavity

Tunable GHz pulse repetition rate operation in high-power TEM 00 -mode Nd:YLF lasers at 1047 nm and 1053 nm with self mode locking

HIGH POWER LASERS FOR 3 RD GENERATION GRAVITATIONAL WAVE DETECTORS

6.1 Thired-order Effects and Stimulated Raman Scattering

High-power semiconductor lasers for applications requiring GHz linewidth source

Nd:YSO resonator array Transmission spectrum (a. u.) Supplementary Figure 1. An array of nano-beam resonators fabricated in Nd:YSO.

Multi-wavelength laser generation with Bismuthbased Erbium-doped fiber

A new picosecond Laser pulse generation method.

High-Power, Passively Q-switched Microlaser - Power Amplifier System

DEVELOPMENT OF CW AND Q-SWITCHED DIODE PUMPED ND: YVO 4 LASER

Mitigation of Self-Pulsing in High Power Pulsed Fiber Lasers

- Multiline generation capabilities of diodepumped. Nd:YAP and Nd:YAG lasers. Journal of Physics: Conference Series. Related content OPEN ACCESS

Trace-gas detection based on the temperature-tuning periodically poled MgO: LiNbO 3 optical parametric oscillator

Module 4 : Third order nonlinear optical processes. Lecture 24 : Kerr lens modelocking: An application of self focusing

Widely tunable Yb:KYW laser with a volume Bragg grating

3550 Aberdeen Ave SE, Kirtland AFB, NM 87117, USA ABSTRACT 1. INTRODUCTION

SUPPLEMENTARY INFORMATION

Novel use of GaAs as a passive Q-switch as well as an output coupler for diode-pumped infrared solid-state lasers

Active mode-locking of miniature fiber Fabry-Perot laser (FFPL) in a ring cavity

Wavelength switching using multicavity semiconductor laser diodes

Ring cavity tunable fiber laser with external transversely chirped Bragg grating

Soliton stability conditions in actively modelocked inhomogeneously broadened lasers

Development of near and mid-ir ultrashort pulse laser systems at Q-Peak. Evgueni Slobodtchikov Q-Peak, Inc.

Low Noise High Power Ultra-Stable Diode Pumped Er-Yb Phosphate Glass Laser

Tera-Hz Radiation Source by Deference Frequency Generation (DFG) and TPO with All Solid State Lasers

Thin-Disc-Based Driver

High-power operation of Tm:YLF, Ho:YLF and Er:YLF lasers

taccor Optional features Overview Turn-key GHz femtosecond laser

S-band gain-clamped grating-based erbiumdoped fiber amplifier by forward optical feedback technique

Generation of 11.5 W coherent red-light by intra-cavity frequency-doubling of a side-pumped Nd:YAG laser in a 4-cm LBO

All-fiber, all-normal dispersion ytterbium ring oscillator

High repetition rate, q-switched and intracavity frequency doubled Nd:YVO 4 laser at 671nm

G. Norris* & G. McConnell

DBR based passively mode-locked 1.5m semiconductor laser with 9 nm tuning range Moskalenko, V.; Williams, K.A.; Bente, E.A.J.M.

High brightness semiconductor lasers M.L. Osowski, W. Hu, R.M. Lammert, T. Liu, Y. Ma, S.W. Oh, C. Panja, P.T. Rudy, T. Stakelon and J.E.

Progress on High Power Single Frequency Fiber Amplifiers at 1mm, 1.5mm and 2mm

High-Power Femtosecond Lasers

Design of efficient high-power diode-end-pumped TEMoo Nd:YVO4. laser. Yung Fu Chen*, Chen Cheng Liaob, Yu Pin Lanb, S. C. Wangb

High Power and Energy Femtosecond Lasers

Actively mode-locked Raman fiber laser

High average power picosecond pulse generation from a thulium-doped all-fiber MOPA system

Designing for Femtosecond Pulses

Q-switched mode-locking with acousto-optic modulator in a diode pumped Nd:YVO 4 laser

Linear cavity erbium-doped fiber laser with over 100 nm tuning range

High-power diode-pumped Er 3+ :YAG single-crystal fiber laser

High Average Power, High Repetition Rate Side-Pumped Nd:YVO 4 Slab Laser

Timing Noise Measurement of High-Repetition-Rate Optical Pulses

Spatial Investigation of Transverse Mode Turn-On Dynamics in VCSELs

High order cascaded Raman random fiber laser with high spectral purity

Single-Frequency, 2-cm, Yb-Doped Silica-Fiber Laser

Testing with Femtosecond Pulses

SUPPLEMENTARY INFORMATION

Controllable harmonic mode locking and multiple pulsing in a Ti:sapphire laser

Introduction Fundamentals of laser Types of lasers Semiconductor lasers

Chapter 8. Wavelength-Division Multiplexing (WDM) Part II: Amplifiers

Hybrid Q-switched Yb-doped fiber laser

A Narrow-Band Tunable Diode Laser System with Grating Feedback

Kilowatt Class High-Power CW Yb:YAG Cryogenic Laser

Supplementary Materials for

Progress in ultrafast Cr:ZnSe Lasers. Evgueni Slobodtchikov, Peter Moulton

Single-frequency operation of a Cr:YAG laser from nm

FIBER OPTICS. Prof. R.K. Shevgaonkar. Department of Electrical Engineering. Indian Institute of Technology, Bombay. Lecture: 18.

Applied Physics Springer-Verlag 1981

Solid-State Laser Engineering

Fiber Lasers for EUV Lithography

Efficient 1.5 W CW and 9 mj quasi-cw TEM 00 mode operation of a compact diode-laser-pumped 2.94-μm Er:YAG laser

Integrated disruptive components for 2µm fibre Lasers ISLA. 2 µm Sub-Picosecond Fiber Lasers

Efficient, high-power, ytterbium-fiber-laser-pumped picosecond optical parametric oscillator

The Development of a High Quality and a High Peak Power Pulsed Fiber Laser With a Flexible Tunability of the Pulse Width

Generation of 15-nJ pulses from a highly efficient, low-cost. multipass-cavity Cr 3+ :LiCAF laser

CONTROLLABLE WAVELENGTH CHANNELS FOR MULTIWAVELENGTH BRILLOUIN BISMUTH/ERBIUM BAS-ED FIBER LASER

RECENTLY, studies have begun that are designed to meet

Dr. Rüdiger Paschotta RP Photonics Consulting GmbH. Competence Area: Fiber Devices

UNMATCHED OUTPUT POWER AND TUNING RANGE

Single frequency Ti:sapphire laser with continuous frequency-tuning and low intensity noise by means of the additional intracavity nonlinear loss

Graduate University of Chinese Academy of Sciences (GUCAS), Beijing , China 3

MULTI-STAGE YTTERBIUM FIBER-AMPLIFIER SEEDED BY A GAIN-SWITCHED LASER DIODE

PERFORMANCE OF PHOTODIGM S DBR SEMICONDUCTOR LASERS FOR PICOSECOND AND NANOSECOND PULSING APPLICATIONS

Multiwavelength Single-Longitudinal-Mode Ytterbium-Doped Fiber Laser. Citation IEEE Photon. Technol. Lett., 2013, v. 25, p.

Multiwavelength mid-ir spatially-dispersive CW laser based on polycrystalline Cr 2+ :ZnSe

Yellow nanosecond sum-frequency generating optical. parametric oscillator using periodically poled LiNbO 3

All-Optical Clock Division Using Period-one Oscillation of Optically Injected Semiconductor Laser

Cost-effective wavelength-tunable fiber laser using self-seeding Fabry-Perot laser diode

Nonlinear Optics (WiSe 2015/16) Lecture 9: December 11, 2015

156 micro-j ultrafast Thulium-doped fiber laser

Fiber-laser-pumped Ti:sapphire laser

Lasers à fibres ns et ps de forte puissance. Francois SALIN EOLITE systems

O. Mahran 1,2 and A.A.Samir 1

Development of Nano Second Pulsed Lasers Using Polarization Maintaining Fibers

PUBLISHED VERSION.

Stabilisation of Linear-cavity Fibre Laser Using a Saturable Absorber

Transcription:

1ps passively mode-locked laser operation of Na,Yb:CaF 2 crystal Juan Du, Xiaoyan Liang State Key Laboratory of High Field Laser Physics, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China Graduate School of the Chinese Academy of Sciences, Beijing 100039, China dujuan@mail.siom.ac.cn liangxy@mail.siom.ac.cn Yonggang Wang Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China Liangbi Su, Weiwei Feng, Enwen Dai, Zhizhan Xu and Jun Xu State Key Laboratory of High Field Laser Physics, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China Abstract: Diode-pumped passively mode-locked laser operation of Yb 3+,Na + :CaF 2 single crystal has been demonstrated for the first time. By using a SESAM (semiconductor saturable mirror), simultaneous transformlimited 1-ps passively mode-locked pulses, with the repetition rate of 183MHz, were obtained under the self-q-switched envelope induced by the laser medium. The average output power of 360mW was attained at 1047nm for 3.34W of absorbed power at 976nm, and the corresponding pulse peak power arrived at 27kW, indicating the promising application of Yb 3+,Na + - codoped CaF 2 crystals in achieving ultra-short pulses and high pulse peak power. 2005 Optical Society of America OCIS codes: (140.3380) Laser materials; (140.3480) Lasers, diode-pumped; (140.4050) Modelocked lasers; (140.5680) Rare earth and transition metal solid-state lasers; References and links 1. M. P. Hehlen, A. Kuditcher, S. C. Rand, and M. A. Tischler, Electron phonon interactions in CsCdBr 3 :Yb 3+, J. Chem. Phys. 107, 4886-4892 (1997). 2. W. F. Krupke, Ytterbium solid-state lasers the first decade, IEEE J. Sel. Top. Quantum Electron. 6, 1287-1296 (2000). 3. C. Kränkel, D. Fagundes-Peters, S. T. Fredrich, J. Johannsen, M. Mond, G. Huber, M. Bernhagen and R. Uecker, Continuous wave laser operation of Yb 3+ :YVO 4, Appl. Phys. B. 79, 543-546 (2004). 4. P. Dekker, J. M. Dawes, J. A. Piper, Y. G. Liu, and J. Y. Wang, 1.1W CW self-frequency-double diodepumped Yb:YAl 3 (BO 3 ) 4 laser, Opt. Commun. 195, 431-436 (2001). 5. E. Montoya, J. A. Sanz-García, J. Capmany, L. E. Bausá, A. Diening, T. Kellner and G. Huber, Continuous wave infrared laser action, self-frequency doubling and tunability of Yb 3+ :MgO:LiNbO 3, J. Appl. Phys. 87,4056-4062 (2000). 6. A. Lucca, M. Jacquemet, F. Druon, F. Balembois, P. Georges, P. Camy, J. L. Doualan and R. Moncorgé, High-power tunable diode-pumped Yb 3+ :CaF 2 laser, Opt. Lett. 29, 1879-1881 (2004). 7. A. Lucca, G. Debourg, M. Jacquemet, F. Druon, F. Balembois, P. Georges, P. Camy, J. L. Doualan and R. Moncorge, High-power diode-pumped Yb 3+ :CaF 2 femtosecond laser, Opt. Lett. 29, 2767-2769 (2004). 8. L. B. Su, J. Xu, H. J. Li, W. Q. Yang, Z. W. Zhao, J. L. Si, Y. J. Dong, and G. Q. Zhou, Codoping Na + to modulate the spectroscopy and photoluminescence properties of Yb 3+ in CaF 2 laser crystal, Opt. Lett. 30, 1003-1005 (2005). 9. L. Su, J. Xu, Y. Xue, C. Wang, L. Chai, X. Xu, and G. Zhao, "Low-threshold diode-pumped Yb 3+,Na + :CaF 2 self-q-switched laser," Opt. Express 13, 5635-5640 (2005), http://www.opticsexpress.org/abstract.cfm?uri=opex-13-15-5635. 10. V. A. Arkhangelskaya, A. A. Fedorov, and P. P. Feofilov, Tunable room-temperature laser action of colour centers in MeF 2 -Na, Opt. Commun. 28, 87-90 (1979). (C) 2005 OSA 3 October 2005 / Vol. 13, No. 20 / OPTICS EXPRESS 7970

11. W. Gellermann, A. Muller, and D. Wandt, Formation, optical properties, and laser operation of F 2 - centers in LiF, J. Appl. Phys. 61, 1297 (1987). 12. T. T. Basiev, Yu. K. Voronko, S. B. Mirov, V. V. Osiko, and A. M. Prokhorov, "Efficient passive switches for neodymium lasers made of LiF:F 2 - crystals," Sov. J. Quantum Electron. 12, 530-531 (1982). 13. T. T. Basiev, S. V. Vassiliev, V. A. Konjushkin, V. V. Osiko, A. I. Zagumennyi, Y. D. Zavartsev, S. A. Kutovoi, and I. A. Shcherbakov, Diode pumped 500-picosecond Nd:GdVO 4 Raman laser, Laser Phys. Lett. 1, 237-240 (2004). 14. C. Hönninger, R. Paschotta, F. Morier-Genoud, M. Moser, and U. Keller, Q-switching stability limits of continuous-wave passive mode locking, J. Opt. Soc. Am. B 16, 46-56 (1999). 1. Introduction Increasing attention has been focused on Yb 3+ -based laser systems since the rapid development of high power and high brightness laser diodes emitting at 900 980-nm, which have been expected to be the most potential alternatives to the Nd 3+ -doped ones in the near-ir spectral range. Compared to their Nd 3+ counterparts, Yb 3+ -doped crystals have broader absorption and emission spectra than Nd 3+ -doped ones owing to the strong electron-phonon coupling [1]. In addition, Yb 3+ has a much simpler energy level scheme and hence a low intrinsic quantum defect (10%), which leading to a weak thermal load, an absence of luminescence quenching, and an enhanced laser action. Laser action near 1µm has been demonstrated in a number of Yb 3+ -doped materials [2-7], and it is obvious that hosts possessing higher thermal conductivity are favorable to exhibit the excellent laser performance of Yb 3+. As a fluoride single crystal, CaF 2 possesses higher transparency in a broad wavelength range, lower refractive-index-limiting nonlinear effect, and lower phonon-energy-reducing nonradiative relaxation between adjacent energy levels. In addition, compared with other fluoride single crystals, CaF 2 is more popular owing to its lower phonon frequency, higher thermal conductivity, and easily being grown with a large diameter. Based on the advantages mentioned above, we choose CaF 2 as our host. Currently, some researches have been focused on Yb:CaF 2 crystal [6,7], and a series of approving results were achieved. Recently, we codoped Yb 3+ with Na + as a charge compensator with the purpose of enhancing quantum efficiency and suppressing the formation of Yb 2+ ions [8]. It exhibited more excellent performance in direct diode-pumped laser operation than Yb:CaF 2 crystal as described in Ref. 9. In this paper, we report for the first time the passively mode-locked performance of this novel Na,Yb:CaF 2 single crystal. Its self-q-switching performance with the highest conversion efficiency ever reported is also mentioned here. 2. Experiments The Yb 3+,Na + :CaF 2 single crystal used in our study was grown by the temperature gradient technique (TGT) in an Ar and PbF 2 atmosphere. The 5 6 6-mm 3 Na,Yb:CaF 2 crystal (polished with parallel end faces, uncoated) was wrapped with indium foil and mounted in a water-cooled copper block, and the water temperature was maintained at 17ºC. The concentration of Na is 3.0-at.%, and the ratio of Na:Yb was 1.5:1. Before study of the mode-locking property of our Yb 3+, Na + :CaF 2 single crystal, we operated the laser in self-q-switching once more to optimize its lasing performance. In this paper, we selected a fiber-coupled laser diode with a 200-µm fiber core diameter and a numerical aperture of 0.22, emitting at the wavelength range of 975 978-nm as our pump source. The self-q-switching operation resonator was a stable three-mirror folded cavity similar with that used in [9], which was designed to permit TEM 00 oscillation only by keeping the laser mode matching with the pump beam. With the output coupler of 3%, we obtained the maximal self-q-switching output power of 495mW centered at 1051nm without any tuning device (Fig. 1, and the inset shows a single self-q-switching pulse at a certain output power of 400mW). And the maximum slope was 30% near the maximum pump power, which implied that more excellent laser performance was feasible when enhancing the pump level. It turned out that the pump beam with radius of 100-µm in the gain medium matched more easily and (C) 2005 OSA 3 October 2005 / Vol. 13, No. 20 / OPTICS EXPRESS 7971

much better with the laser beam than that with small radius. Therefore, we adopted this diode for our further mode-locking investigation. 500 Average output power (mw) 400 300 200 100 Intensity (a. u.) 0.28 0.26 0.24 0.22 0.20 0.18 0.16 0.14 0.12-30 -20-10 0 10 20 30 Time(us) (self-q-switching) passively mode-locking) 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 Absorbed pump power (W) Fig. 1. Dependence of the average output power on the absorbed pump power in self-qswitched and mode-locked operation, respectively. The inset is a single self-q-switched pulse at output power of 400mW. With the same Yb 3+,Na + :CaF 2 single crystal, the passive mode-locking operation cavity consisted of two high reflector (at 1050 nm) mirrors, M1 and M2; one output coupler (OC) (T=3% at 1050 nm) giving a total output coupling of ~6% for two output beam; and a SESAM device, as shown in Fig. 2. The curvature radii of M2 and OC were 300 and 100-mm, respectively. Distances between each cavity mirror were designed for better mode matching with the pump beam and to provide the proper spot size of 40~60µm in diameter on the SESAM. The SESAM was mounted on a heat sink, but no active cooling was applied. Its saturation pulse energy was estimated to be about 60µJ/cm 2. The modulation depth, nonsaturable losses, and absorption recovery time of the SESAM were 1.0%, <0.2% and ~20- picosecond, respectively. Fig. 2. Configuration of passively mode-locked operation with a SESAM device. (C) 2005 OSA 3 October 2005 / Vol. 13, No. 20 / OPTICS EXPRESS 7972

3. Results and discussions The lasing threshold was 1.6W, and near lasing threshold the output was effectively self-qswitching as we demonstrated above; slightly increasing the pump power to 1.7W, simultaneous mode-locked pulses under self-q-switched envelope was emerged. When the pump power was increased further, the self-q-switched envelope became regular both in the features of pulse duration and pulse repetition rate. Figure 1 illustrated the dependence of the average mode-locking output power on the absorbed pump power. At the maximum absorbed pump power of 3.34W, total average output power of 360mW was achieved. The maximum slope of the power curve reached 27.2%. Fig. 3(a) and (b) show the regular sequence of the self-q-switched pulses and a single Q-switched modulation pulse about 8μs sampling from the train at absorbed power of 3W, respectively. The pulse-to-pulse amplitude fluctuation of the self-q-switched pulse train is found to be less than s 5%. As shown in Fig. 3(c), simultaneous mode-locked pulse trains inside the self-q-switched pulse induced by Na,Yb:CaF 2 crystal are achieved with a repetition rate of ~183MHz. The measured autocorrelation trace is shown in Fig. 4(a). The full width at half maximum (FWHM) of the autocorrelation trace is about 1.4-ps, assuming a Gaussian pulse profile, and the pulse width of mode-locked pulses is then estimated to be 1-ps. The narrow pulse width should be attributed to the broad gain bandwidth of the Yb 3+, Na + :CaF 2 crystal. Also, it can be calculated that the peak power of a single pulse near the maximum of the self-q-switched envelope reached 27kW approximately. To our knowledge, this is the first demonstration of the passively mode-locked operating for the Na,Yb:CaF 2 crystal laser. (a) (b) (c) Fig. 3. (a) Self-Q-switched pulse train of a mode-locked Yb 3+, Na + :CaF 2 laser, (b) a single self- Q-switched pulse sampling from the train and (c) a pulse train of mode-locked pulses under the self-q-switched envelope. (C) 2005 OSA 3 October 2005 / Vol. 13, No. 20 / OPTICS EXPRESS 7973

The Na,Yb:CaF 2 crystal exhibits self-q-switching characteristic, other than cw laser characteristic. Therefore, Su et al have put forward a tentative assumption to explain the mechanism for the self-q-switching operating of the Yb 3+, Na + -codoped CaF 2 crystal [9]. From the point of view of absorption (as shown in Fig. 4 in Ref. 9), we construed the self-qswitching phenomenon as the well-known F - 2 centers (pairs of anion vacancies with three electrons) [10], which are effective passive Q-switcher in irradiated LiF crystals [11-13]. The F - 2 centers could be formed in Yb 3+, Na + :CaF 2 crystal during growth process, owing to the excessive electrons from Yb 3+ ions substituting Ca 2+. The absorption band of F - 2 centers could overlap with that of Yb 3+ in Yb 3+, Na + :CaF 2. An additional absorption band peaking at 1066nm was observed, which probably be attributed to the F - 2 centers, might be a convincing proof of this explanation. The explanation of self-q switching mechanism was just qualitative, and more accurate could be obtained by resolving the population equation. There was an interesting new phenomenon to note that, unlike traditional Q-switched mode-locking where the Q-switched envelope was induced by the incomplete saturation of saturable absorber [14], here the Q-switching envelope was due to the self-q-switching ability of the Yb 3+, Na + :CaF 2 crystal. This could be confirmed simply by replacing the SESAM with a high reflector mirror. We found that the repetition rate of the self-q-switched pulses coincided with before of ~5-kHz, as shown in Fig. 3(a). Furthermore, Q-switched pulses resulted from SESAM typically repeated faster. In a Q-switched laser, it was convinced that the pulse duration generally decreased with shorter cavities and with higher pump power (increased small-signal gain). And that was why in this paper the self-q-switched pulse duration was longer than that mentioned in [9] on the similar pump level. On the other hand, the laser in our experiment was in self-q-switching operation, then the power density in the laser cavity was enhanced times than in the case of cw laser operation. Consequently, the SESAM was more easily to be saturated strongly at lower average laser power than common laser crystals. Autocorrelation trace 1.0 0.8 0.6 0.4 0.2 0.0 τ p =1ps -6-4 -2 0 2 4 6 Time delay (ps) (a) Intensity (a.u.) 0.6 0.5 0.4 FWHM 1.8nm 0.3 0.2 0.1 0.0 1043 1044 1045 1046 1047 1048 1049 1050 1051 Wavelength (nm) (b) Fig. 4. Autocorrelation of 1-ps pulses at 300mW output power is shown in the left inset. The dots indicate the experiment data and the solid line indicates the Gaussian fit data. The right inset shows the corresponding optical spectrum. To investigate the quality of the mode-locked pulses further, we also measured the laser spectrum. The corresponding optical spectrum measured using an optical spectrum analyzer (InSpectrum, Acton) is shown in Fig. 4(b). Under a scanning resolution of 0.02 nm, the bandwidth (FWHM) was measured to be about 1.8nm corresponding to ν=493ghz, centered at 1047nm. Then the time-bandwidth product is about 0.493, suggesting that the output pulse is unchirped. (C) 2005 OSA 3 October 2005 / Vol. 13, No. 20 / OPTICS EXPRESS 7974

4. Conclusions We have reported on the passively mode-locked laser performance of the Yb 3+, Na + :CaF 2 crystal for what is to our knowledge the first time. Transform-limited 1-ps passively modelocked pulses, with the pulse peak power of 27kW corresponding to merely 180mW average output power of single beam, were obtained under the self-q-switched envelope induced by the laser medium. Experiment results convince that the novel crystal is a promising gain medium in achieving ultra-short pulses and high pulse peak power. Currently we are working on the coated, different doping concentration crystals, the improved SESAM and optimized output couplers, and it is believed that more considerable interest for laser applications will be made. Acknowledgments This work was supported by the National Natural Science Foundation of China (Grant No. G1999075201 and 60478002) and the National Outstanding Youth Foundation (Grant No. 60425516). (C) 2005 OSA 3 October 2005 / Vol. 13, No. 20 / OPTICS EXPRESS 7975