NEC's HIGH ISOLATION VOLTAGE SINGLE TRANSISTOR TYPE MULTI OPTOCOUPLER SERIES PS26-, -2, -4 PS26L-, -2, -4 FEATURES HIGH ISOLATION VOLTAGE (BV) Vr.m.s.: normal specification products HIGH COLLECTOR TO EMITTER VOLTAGE VCEO = 8 V MIN HIGH CURRENT TRANSFER RATIO CTR: 2% TYP HIGH SPEED SWITCHING tr = 3 µs, tf = µs TYP ISOLATED CHANNELS PER EACH PACKAGE ELECTRICAL CHARACTERISTICS (TA = 2 C) Diode Transistor Coupled DESCRIPTION NEC's PS26-, -2 and -4 and PS26L-, -2 and -4 are optically coupled isolators containing a GaAs light emitting diode and a NPN silicon phototransistor. PS26-, -2 and - 4 are in a plastic DIP (Dual In-line Package) and PS26L-, -2 and -4 are in a lead bending type (Gull-wing) for surface mount. APPLICATIONS Interface circuit for various instrumentations, and control equipment. AC LINE / DIGITAL LOGIC DIGITAL LOGIC / DIGITAL LOGIC TWISTED PAIR LINE RECEIVER TELEPHONE / TELEGRAPH LINE RECEIVER HIGH FREQUENCY POWER SUPPLY FEEDBACK CONTROL RELAY CONTACT MONITOR POWER SUPPLY MONITOR PART NUMBER PS26-, -2, -4 PS26L-, -2, -4 SYMBOLS PARAMETERS UNITS MIN TYP VF Forward Voltage, IF = ma V.7.4 IR Reverse Current, VR = V µa C Junction Capacitance, V =, f =. MHz pf ICEO Collector to Emitter Dark Current, VCE = 4 V, IF = na BVCEO Collector to Emitter Breakdown Voltage, IC = ma, IB = V 4 6 BVECO Emitter to Collector Breakdown Voltage, IE = µa, IB = V 7 9 CTR Current Transfer Ratio,, VCE = V % 8 2 4 VCE(sat) Collector Saturation Voltage, IF = ma, IC = 2 ma V.3 R-2 Isolation Resistance, Vin-out = k V Ω C-2 Isolation Capacitance, V =, f =. MHZ pf. tr Rise Time 2, VCC = V, IC = 2 ma, RL = Ω µs 3 tf Fall Time 2, VCC = V, IC = 2 ma, RL = Ω µs Note:. CTR Rank (PS26-, PS26L- Only) 2.Test Circuit for Switching Time L: 2 to 4 % M:8 to 24 % D: to 3 % H: 8 to 6 % W: 3 to 26 % 2 2 3 4 6 2 9 2 3 4 6 7 8 PS26- PS26-2 PS26-4 PULSE INPUT PW = µs Duty Cycle = / IF Ω 2 VCC 4 VOUT 3 RL = Ω California Eastern Laboratories
PS26-, -2, -4 PS26L-, -2, -4 ABSOLUTE IMUM RATINGS (TA = 2 C) SYMBOLS PARAMETERS UNITS RATINGS PS26 - PS26-2,-4 PS26L - PS26L -2,-4 Diode VR Reverse Voltage V 6 6 IF Forward Current (DC) ma 8 8 PD Power Dissipation mw/ch 2 IF (PEAK) Peak Forward Current A (PW = µs, Duty Cycle %) Transistor VCEO Collector to Emitter Voltage V 8 8 VECO Emitter to Collector Voltage V 7 7 IC Collector Current ma PC Power Dissipation mw/ch 2 Coupled BV Isolation Voltage 2 normal speck Vr.m.s. BV Isolation Voltage 2 VDE884 speck Vr.m.s. 37 37 PT Total Power Dissipation mw/ch 2 2 TSTG Storage Temperature C - to + - to + TOP Operating Temperature C - to + - to + TSOL Lead Temperature C 26 26 (Soldering s) Notes:. Operation in excess of any one of these parameters may result in permanent damage. 2. AC voltage for minute at TA = 2 C, RH = 6 % between input and ouput. TYPICAL PERFORMANCE CURVES (TA = 2 ) DIODE POWER DISSIPATION vs. AMBIENT TEMPERATURE TRANSISTOR POWER DISSIPATION vs. AMBIENT TEMPERATURE Diode Power Dissipation, PD (mw) PS26-2 PS26L-2 PS26- PS26L-.2 mw/ßc. mw/ßc 2 7 2 Transistor Power Dissipation, PC (mw) PS26-2 PS26L-2 PS26- PS26L-.2 mw/ßc. mw/ßc 2 7 2 FORWARD CURRENT vs. FORWARD VOLTAGE COLLECTOR CURRENT vs. COLLECTOR to EMITTER VOLTAGE 7 Forward Current, IF (ma). ßC 6 ßC 2 ßC ßC -2 ßC - ßC Collector Current, IC (ma) 6 4 3 2 ma 2 ma ma..7.8.9...2.3.4. Forward Voltage, VF (V) 2 4 6 8 Collector to Emitter Voltage, VCE (V)
PS26-, -2, -4 PS26L-, -2, -4 TYPICAL PERFORMANCE CURVES (TA = 2 C) COLLECTOR TO EMITTER DARK CURRENT vs. AMBIENT TEMPERATURE COLLECTOR CURRENT vs. COLLECTOR SATURATION VOLTAGE Collector to Emitter Dark Current, ICEO (na) VCE = 8 V VCE = 4 V VCE = 24 V VCE = V VCE = V - -2 2 7 Collector Current, IC (ma). ma 2 ma ma ma 2 ma IF = ma..2.4.6.8. Collector Saturation Voltage, VCE(sat) (V) NORMALIZED OUTPUT CURRENT vs. AMBIENT TEMPERATURE CURRENT TRANSFER RATIO (CTR) vs. FORWARD CURRENT.2 4 CTR, Normalized Output Current..8.6.4.2 Normalized to. at TA = 2 C, VCE = V - -2 2 7 Current Transfer Ratio, CTR (%) 4 3 3 2 2... Ambient Temperature,TA ( C) Forward Current, IF (ma) SWITCHING TIME vs. LOAD RESISTANCE SWITCHING TIME vs. LOAD RESISTANCE Switching Time, t (µs) IC = ma VCC = V TA = 2 C CTR 29 % tf ts tr td Switching Time, t (µs) tf tr td ts IC = 2 ma VCC = V TA = 2 C CTR 29 % k k k k. k k k Load Resistance, RL (Ω) Load Resistance, RL (Ω)
PS26-, -2, -4 PS26L-, -2, -4 TYPICAL PERFORMANCE CURVES (TA = 2 ) FREQUENCY RESPONSE CTR DEGRADATION Relatirve Voltage Gain, Av (db) - - - -2 RL = kω VCE = V TA = 2 C Ω CTR, Normalized.2..8.6.4.2 TA = 2 C. TA = 6 C. TYP. 3 Ω. 2 2 2 2 3 4 Frequency, f (khz) Time, Hr OUTLINE DIMENSIONS (Units in mm) DIP (Dual In-Line Package) PS26- PS26-2..2. Anode 2. Cathode 3. Emitter 4. Collector 2 2 3 4, 3. Anode 2, 4. Cathode, 7. Emitter 6, 8. Collector 4.. 4. MIN..6.34. ±. to MIN.6.34. ±. to PS26-4 2.3 6 2 9 4. 2 3 4 6 7 8, 3,, 7. Anode 2, 4, 6, 8. Cathode 9,, 3,. Emitter, 2, 4, 6. Collector MIN.6.34. ±. to
PS26-, -2, -4 PS26L-, -2, -4 OUTLINE DIMENSIONS (Units in mm) Lead Bending type (Gull-Wing) PS26L- PS26L-2.. Anode 2. Cathode 3. Emitter 4. Collector.2 2 2 3 4, 3. Anode 2, 4. Cathode, 7. Emitter 6, 8. Collector. to.2. to.2.34 ±. 9.6 ±.4.9 ±.2.34 ±. 9.6 ±.4.9 ±.2 PS26L-4 2.3 6 2 9.34 ±. 9.6 ±.4 2 3 4 6 7 8, 3,, 7. Anode 2, 4, 6, 8. Cathode. to.2 9,, 3,. Emitter, 2, 4, 6. Collector.9 ±.2 OUTLINE DIMENSIONS (Units in mm) DIP (Lead-Bending Type). PS26L-. PS26L2-.6 7.6 4.2 2 MIN.3.2 ±.2.34. ±. -.27.34 ±..9 ±.2.6 2. Life Support Applications These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications do so at their own risk and agree to fully indemnify CEL for all damages resulting from such improper use or sale. /4/23 A Business Partner of NEC Compound Semiconductor Devices, Ltd.