IRHiRel Schottky Diodes and Ultra-Fast Rectifiers Product Selection Guide.

Similar documents
CoolMOS SJ MOSFETs benefits

600 V/650 V CoolMOS fast body diode series (CFD2/CFD7/CFDA)

Space Level Solutions Guide

Classic PROFET and Mini PROFET Leading the Way in Energy Robustness

RDHA701FP10A8CK RDHA701FP10A8QK

+Vin. Input Return. +Vin. Input Return

OptiMOS and StrongIRFET combined portfolio

Emitter Controlled 4 High Power Technology IDC73D120T8H

Series PVT322PbF. Microelectronic Power IC HEXFET Power MOSFET Photovoltaic Relay Dual Pole, Normally Open, 0-250V, 170mA AC/DC

AMA28XXS SERIES. 28V Input, Single Output HYBRID-HIGH RELIABILITY RADIATION TOLERANT DC-DC CONVERTER PD-94687G AMA

ATR28XXT SERIES. 28V Input, Triple Output HYBRID-HIGH RELIABILITY DC-DC CONVERTER PD-94551E. Description ATR. Features

AF28461 SERIES EMI FILTER HYBRID-HIGH RELIABILITY PD Description

IRHM krads(si) A JANSR2N7269 IRHM krads(si) A JANSH2N7269 TO-254AA

BAS40.../BAS140W BAS40-05 BAS40-05W BAS40-06 BAS40-06W BAS40-02L BAS40-07 BAS40-07W

IRFYB9130C, IRFYB9130CM

REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED

VOLTAGE RANGE 200 Volts CURRENT 8.0 Amperes C J. C Storage Temperature Range

IRHNA57264SE JANSR2N7474U2 R 5 250V, N-CHANNEL REF: MIL-PRF-19500/684 RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2) PD-93816G TECHNOLOGY

ARF461 SERIES EMI FILTER HYBRID-HIGH RELIABILITY PD-94588C. Description ARF

PERFORMANCE SPECIFICATION SHEET

GHP2815S. 120W, Single Output HYBRID-HIGH RELIABILITY RADIATION HARDENED DC-DC CONVERTER

REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED. A Drawing updated to reflect current requirements. gt R. Monnin

IRHNA57064 JANSR2N7468U2 R 5 60V, N-CHANNEL REF: MIL-PRF-19500/673 RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2) PD-91852J TECHNOLOGY

AMR28XXD SERIES. 28V Input, Dual Output HYBRID-HIGH RELIABILITY RADIATION TOLERANT DC-DC CONVERTER PD-94690E AMR

IRF3CMS17N80. POWER MOSFET THRU-HOLE (Low-Ohmic TO-254AA) 800V, N-CHANNEL PD Product Summary Part Number RDS(on) I D.

IRHY57234CMSE JANSR2N7556T3 R 5 250V, N-CHANNEL REF: MIL-PRF-19500/705 TECHNOLOGY RADIATION HARDENED POWER MOSFET THRU-HOLE(TO-257AA) PD-93823D

IRHNJ597Z30 JANSR2N7519U3 R 5 30V, P-CHANNEL REF: MIL-PRF-19500/732 RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5) PD-94661C TECHNOLOGY

QPL Part Number JANSR2N7270 IRHM krads(si) A JANSF2N7270 IRHM krads(si) A JANSG2N7270 JANSH2N7270 TO-254

IRHMS JANSR2N7524T1 R 5 60V, P-CHANNEL REF: MIL-PRF-19500/733. RADIATION HARDENED POWER MOSFET THRU-HOLE (Low Ohmic - TO-254AA) PD-94713E

IRHY63C30CM 300k Rads(Si) A TO-257AA

REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED

IRHNA JANSR2N7524U2 R 5 60V, P-CHANNEL REF: MIL-PRF-19500/733 RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2) PD-94604D TECHNOLOGY

IRHNA9160 JANSR2N7425U

RF front-end solutions for mobile applications. Selection guide.

AMF28XXXXS SERIES. 28V Input, Single Output HYBRID-HIGH RELIABILITY RADIATION TOLERANT DC-DC CONVERTER PD-94689E AMF

TVS (transient voltage suppressor) Bi-directional, 5.5 V, 0.1 pf, 0201, 0402, RoHS and halogen free compliant

IRHN7150 JANSR2N7268U

IRHNJ57230SE JANSR2N7486U3 R 5 200V, N-CHANNEL REF: MIL-PRF-19500/704 RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5) PD-93836C TECHNOLOGY

IRHYS9A7130CM JANSR2N7648T3

REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED. A Changes in accordance with NOR 5962-R M. A. FRYE

REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED. A Changes in accordance with NOR 5962-R Michael A. Frye

I D. Operating Junction and -55 to T STG. C Lead Temperature 300 (0.063 in. /1.6 mm from case for 10s) Weight 0.98 (Typical) g

Resonant wireless power transfer

Wireless charging for consumer

Green. PowerDI123. Top View. Part Number Compliance Case Packaging DFLS260Q-7 Automotive PowerDI /Tape & Reel

IRHNA57Z60 JANSR2N7467U2 R 5 30V, N-CHANNEL REF: MIL-PRF-19500/683 RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2) PD-91787J TECHNOLOGY

AHF SERIES HYBRID-HIGH RELIABILITY DC-DC CONVERTER PD-94541E. 28V Input, Single/Dual Output AHF. Description. Features

IRHLMS RADIATION HARDENED LOGIC LEVEL POWER MOSFET THRU-HOLE (Low-Ohmic TO-254AA) 60V, P-CHANNEL TECHNOLOGY PD-95860

Qualified for industrial applications according to the relevant tests of JEDEC47/20/22

IRHLMS RADIATION HARDENED LOGIC LEVEL POWER MOSFET THRU-HOLE (Low-Ohmic TO-254AA) 60V, N-CHANNEL TECHNOLOGY PD-97836

Qualified for industrial applications according to the relevant tests of JEDEC47/20/22

High Voltage Input Rectifier Diode, 60 A

2N7622U2 IRHLNA797064

AUTOMOTIVE GRADE. Thermal Resistance Symbol Parameter Typ. Max. Units R JC Junction-to-Case 1.9 R JA Junction-to-Ambient ( PCB Mount) 50 C/W

B170BQ - B1100BQ. Features and Benefits. Product Summary C) Mechanical Data. Applications. Ordering Information (Note 5) Marking Information

Current CAGE CODE is 67268

TVS (transient voltage suppressor) Bi-directional, 18 V (AC), 13 V (DC), 0.3 pf, 0201, RoHS and halogen free compliant

SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 5089, REV. A.2

IRHNS57160 R 5 100V, N-CHANNEL. RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SupIR-SMD) PD-97879A TECHNOLOGY. Product Summary

RIC74424H RADIATION HARDENED NON-INVERTING DUAL OUTPUT MOSFET DRIVERS PD Product Summary. Description

BAT68... Silicon Schottky Diodes For mixer applications in the VHF / UHF range For high-speed switching applications Pb-free (RoHS compliant) package

IRHF57234SE 100 krads(si) A TO-39

IRHI7360SE. 400V, N-CHANNEL RAD-Hard HEXFET TECHNOLOGY RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-259AA) PD-91446B

IRF5M V, P-CHANNEL HEXFET MOSFET TECHNOLOGY POWER MOSFET THRU-HOLE (TO-254AA) PD-94155A

PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, DUAL, SCHOTTKY, COMMON CATHODE, TYPE 1N7070CCT3, JAN, JANTX, JANTXV, AND JANS

R 7 IRHLNA N7604U2 60V, N-CHANNEL RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE MOUNT (SMD-2) PD-97177C TECHNOLOGY

ILD2035. MR16 3 W Control Board with ILD2035. Application Note AN214. Industrial and Multimarket. Revision: 1.0 Date:

High Voltage Input Rectifier Diode, 60 A

AUTOMOTIVE GRADE. A I DM Pulsed Drain Current -44 P A = 25 C Maximum Power Dissipation 3.8 P C = 25 C Maximum Power Dissipation 110

Absolute Maximum Ratings (Per Die)

ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type Package Configuration L S (nh) Marking BAT15-02EL BAT15-02ELS

Qualified for industrial applications according to the relevant tests of JEDEC47/20/22

IRL5NJ V, P-CHANNEL LOGIC LEVEL POWER MOSFET SURFACE MOUNT (SMD-0.5) PD-94052C. Product Summary

R 7 2N7624U3 IRHLNJ V, P-CHANNEL RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE MOUNT (SMD-0.5) PD-97302D TECHNOLOGY.

REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED. A Drawing updated to reflect current requirements. - lgt Raymond Monnin

Part Number Radiation Level RDS(on) I D IRHLUC7970Z4 100 krads(si) A IRHLUC7930Z4 300 krads(si) A LCC-6

-2.7A. Pin Out - Top View

Qualified for industrial applications according to the relevant tests of JEDEC47/20/22

IRHNJ63C krads(si) A SMD-0.5

IRFF230 JANTX2N6798 JANTXV2N6798

Qualified for industrial applications according to the relevant tests of JEDEC47/20/22

54AC11533, 74AC11533 OCTAL D-TYPE TRANSPARENT LATCHES WITH 3-STATE OUTPUTS

Secondary Side Synchronous Rectifier Controller

IRHLNM7S7110 2N7609U8

Absolute Maximum Ratings (Per Die)

PERFORMANCE SPECIFICATION SHEET

Item Symbols Conditions Ratings Units Repetitive peak reverse voltage VRRM - 80 V Isolating voltage Viso Terminals-to-case, AC.

STANDARD MICROCIRCUIT DRAWING MICROCIRCUIT, DIGITAL-LINEAR, DIFFERENTIAL LINE RECEIVER, MONOLITHIC SILICON

SN54F74, SN74F74 DUAL POSITIVE-EDGE-TRIGGERED D-TYPE FLIP-FLOPS WITH CLEAR AND PRESET

IRF7MS V, N-CHANNEL HEXFET MOSFET TECHNOLOGY. POWER MOSFET THRU-HOLE (Low-Ohmic TO-254AA) PD-94609A

Optocoupler, Photodarlington Output, AC Input, High Gain (Single, Dual Channel)

Ultrafast Soft Recovery Diode, 30 A FRED Pt Gen 4

TRENCHSTOP TM IGBT4 Low Power Chip IGC13T120T8L

ESD0P2RF-02LRH ESD0P2RF-02LS

Schottky Barrier Rectifier

B3XXXBE B3XXBE B370BE-B3100BE B370CE-B3100CE. Features and Benefits. Product Summary. Mechanical Data. Description and Applications

PROFET ITS716G Ω Ω. Green Product (RoHS compliant) Data Sheet 1 Rev. 1.1,

Green. Bottom View. Top View

Qualified for industrial applications according to the relevant tests of JEDEC47/20/22.

Optocoupler, Phototransistor Output, Dual Channel

Transcription:

IRHiRel Schottky Diodes and Ultra-Fast Rectifiers Product Selection Guide www.infineon.com/hirel

Introduction The latest rectifier products are now available from the world s most reliable source of power semiconductors. Whether your requirement is in the output rectification, circuit isolation, or free-wheeling design application, these new series of Schottky and high voltage ultra-fast recovery rectifiers are intended to provide the high circuit efficiency, excellent dynamic performance and unparalleled reliability our customers are accustomed to with our products. The products are available in a choice of hermetic packages with years of excellent reliability records. IRHiRel Schottky Diodes and Ultra-Fast Rectifiers are offered with the following screening and QI levels based on the DoD Department of Logistics (DLA) MIL-PRF-19500: 1. ommercial off the shelf (OTS) with no QI 2. Source ontrol Drawing (SD) 3. IRHiRel s Qualified IR List (QIRL) with TX, TXV and S level equivalent to MIL-PRF-19500 screenings, manufactured and tested on the same production line with the same flow as MIL-PRF-19500 DLA approved line. QIRL part numbers have SX, SV, SS suffix respectively. 4. DLA approved Qualified Product List (QPL) with TX, TXV, and S level screenings to MIL-PRF-19500 sold under military part number starting with JAN under DLA approved slash sheet. LDO +12/15V Output SHOTTKY/FRED LDO 12/15V RTN D Input -12/15V Output -1.8-5V Output RTN SHOTTKY RETIFIER 2

ontent Schottky Diodes 4 Ultra-Fast Diodes 6 Schottky Diodes Nomenclature 7 Ultra-Fast Diodes Nomenclature 7 3

Schottky Diodes portfolio Schottky Diodes Single Device Part Number DLA Qualified JEDE Part Number VR IF(AV) (A) @ T VF @ IF @ 25 VF @ IF @ 125 Rth(J) 18-pin L 8EQ045 45 10 100 0.65 0.58 6 5EQ100 100 8 100 0.8 0.65 6 D2 16SYJQ045 45 16 117 0.56 0.52 1.15 SMD-0.5 30SLJQ030 QP 1N7078U3 30 30 105 0.62 0.57 1.6 30LJQ045 45 30 107 0.71 0.66 1.6 30SLJQ045 45 30 97 0.75 0.74 1.6 30SLJQ060 60 30 70 0.92 0.96 2 15LJQ100 QPL 1N6844U3 100 15 100 0.91 0.72 2.25 30LJQ100 100 30 88 1.04 0.82 2 30LJQ150 QPL 1N7038U3 150 30 84 1.18 0.92 1.82 SMD-1 75SLQ030 30 75 82 0.59 0.51 1.1 120LQ045 45 120 64 0.99 1.07 0.8 60LQ045 45 60 105 0.68 0.6 0.5 75SLQ045 45 75 78 0.64 0.61 1.1 75SLQ060 60 75 74 0.82 0.7 1.1 120LQ100 100 120 58 0.94 0.74 0.8 60LQ100 100 60 102 0.95 0.7 1.1 75LQ150 150 75 108 1.06 0.78 0.75 TO-254AA 35SGQ030 30 35 100 0.7 0.69 1.1 25GQ045 45 35 100 0.93 0.84 1 35SGQ045 45 35 99 0.75 0.79 1.1 35SGQ060 60 35 79 0.83 0.92 1.1 22GQ100 100 30 100 1.1 0.9 1 35GQ100 QPL 1N7069T1 100 35 91 1.05 1 1.1 35GQ150 150 35 100 1 0.9 1.1 16SYQ030 30 16 134 0.55 0.43 1.1 TO-257AA 10YQ045 45 10 109 0.73 0.7 2.6 10YQ045 QPL 1N7045T3 45 10 109 0.73 0.7 2.6 16SYQ045 45 16 117 0.56 0.52 1.1 16YQ045 45 16 133 0.65 0.61 1.1 16SYQ060 60 16 125 0.65 0.63 1.1 16YQ100 100 16 132 0.785(15A) 0.71(15A) 1.1 16YQ150 150 16 124 0.97 0.87 1.25 4

Schottky Diodes portfolio ommon athode Part Number DLA Qualified JEDE Part Number VR IF(AV) (A) @ T VF @ IF @ 25 VF @ IF @ 125 Rth(J) SMD-0.5 30SLJQ030 30 30 80 0.61 0.55 1.75 30LJQ045 QPL 1N7064U3 45 30 87 0.8 0.72 1.75 30SLJQ045 45 30 105 0.7 0.69 1.75 8LJQ045 45 8.5 100 0.67(4A) 0.58(4A) 3.73 30SLJQ060 60 30 77 0.9 0.78 1.75 30LJQ100 QPL 1N6843U3 100 30 84 1.03 0.77 1.75 30LJQ150 QPL 1N7058U3 150 30 72 1.2 0.85 1.75 SMD-1 80SLQ030 30 80 92 0.56 0.55 0.63 20LQ045 QPL 1N7041U1 45 20 100 0.57 0.48 1.2 35LQ045 45 35 107 0.63(20A) 0.57(20A) 0.7 80SLQ045 45 80 84 0.63 0.62 0.63 80SLQ060 60 80 102 0.68 0.64 0.63 15LQ100 QPL 1N7037U1 100 15 100 0.67(5A) 0.53(5A) 1.2 90LQ100 100 90 69 0.98(40A) 0.81(40A) 0.63 12LQ150 QPL 1N7039U1 150 35 100 1.13(15A) 0.86(15A) 0.83 80LQ150 150 80 94 0.96 0.84 0.63 TO-254AA 35SGQ030 30 35 108 0.59 0.53 0.63 22GQ045 QPL 1N6660T1 45 35 100 0.75(20A) 0.7(20A) 0.625 35GQ045 45 35 114 0.68 0.65 0.7 35SGQ045 45 35 116 0.54(15A) 0.47(15A) 0.63 35SGQ060 60 35 113 0.61 0.61 0.63 15GQ100 QPL 1N7043T1 100 35 100 0.89(15A) 0.85(15A) 0.83 35GQ100 QPL 1N7062T1 100 35 113 0.79(15A) 0.71(15A) 0.63 12GQ150 QPL 1N7039T1 150 35 100 1.13(15A) 0.86(15A) 0.83 35GQ150 150 35 115 0.93 0.8 0.63 TO-257AA 16SYQ030 30 16 138 0.48(7.5A) 0.33(7.5A) 0.8 16YQ045 45 16 136 0.57 0.49 0.8 16SYQ045 45 16 134 0.5 0.42 0.8 16SYQ060 60 16 127 0.58 0.55 1 16YQ100 QPL 1N7070T3 100 16 131 0.75 0.63 1 16YQ150 QPL 1N7047T3 150 16 132 0.91 0.73 0.84 TO-258AA 60KQ045 QPL 1N7071T8 45 45 124 0.71(25A) 0.62(25A) 0.42 45KQ100 100 45 100 0.89(25A) 0.74(25A) 0.42 TO-259AA 45IQ100 100 45 100 0.89(25A) 0.74(25A) 0.42 5

Ultra-Fast Diodes portfolio Ultra-Fast Diodes Single Device Part Number VR IF(AV) (A) @ T VFM @ IF IR @VR (µa) Rth(J) SMD-0.5 HFB25HJ20 200 25 106 1.18 10 1.76 SMD-1 HFA40HF120 1200 11 100 3.1 10 1.5 HFA40HF60 600 22 100 1.75 10 1.5 HFB60HF20 200 60 55 1.13 50 1.76 TO-254AA HFA35HB120 1200 11 100 3.1 10 1.5 HFA35HB60 600 22 100 1.75 10 1.5 HFB35HB20 200 35 80 1.15 10 1 TO-257AA HFB16HY20 200 16 120 1.17 1 1.25 TO-258AA HFB50H20 200 50 87 1.28 0.07 0.75 TO-259AA HFB50HI20 200 50 87 1.28 0.07 0.75 ommon athode Part Number VR IF(AV) (A) @ T VFM @ IF IR @VR (µa) Rth(J) SMD-0.5 HFB20HJ20 200 20 85 1.3 10 4.5 SMD-1 HFA40HF120 1200 15 100 3.3 10 2 HFA40HF60 600 30 100 1.56 10 2 HFB60HF20 200 60 50 1.25 10 2.73 TO-254AA HFA35HB120 1200 15 100 4.4 10 2 HFA35HB60 600 30 100 1.92 10 2 HFB35HB20 200 35 108 1.4 50 1.4 TO-257AA HFB16HY20 200 16 132 1.15 1 1.49 TO-258AA HFA45H120 1200 28 100 3.9 20 1.2 HFA45H60 600 45 100 2 10 1.2 HFB50H20 200 50 107 1.49 1 0.96 TO-259AA HFA45HI120 1200 28 100 3.9 20 1.2 HFA45HI60 600 45 100 2 10 1.2 HFB50HI20 200 50 100 1.54 1 0.96 6

Nomenclature Schottky Diodes Nomenclature 22 S G Q 045 SX urrent designator Process designator S = Mo, 150 No Suffix = PdMo, 175 ircuit designator No Suffix = Single Die = ommon athode onfiguration J = ommon Anode onfiguration D = Doubler onfiguration Package designator E = L-18 G = TO-254AA I = TO-259AA K = TO-258AA L = SMD-1 LI = SMD-0.5 Y = TO-257AA YI = D2 Schottky Lead option A = Lead Form Down* B = Lead Form Up = Lead Trimmed (clipped) * Lead attach if package is on SMD Screening level SX = TX Level SV = TXV Level SS = Space Level Eyelet designator (Applies only to TO-257AA package) = eramic Eyelets G = Glass Eyelets Voltage rating 030 = 30V 045 = 45V 060 = 60V 100 = 100V 150 = 150V Ultra-fast Diodes Nomenclature HF A 30 HB 60 SX Fred Process designator A = Electron Irradiated B = Platinum Diffused Lead option A = Lead Form Down* B = Lead Form Up = Lead Trimmed (clipped) D = arrier (applies only to SMD-1 and SMD-2) * Lead attach if package is on SMD Average current Package designator HB = TO-254AA H = TO-258AA HI = TO-259AA HF = SMD-1 HJ = SMD-0.5 HY = TO-257AA Voltage rating 20 = 200V 60 = 600V 120 = 1200V Screening level SX = TX Level SV = TXV Level SS = Space Level ircuit designator No Suffix = Single Die = ommon athode onfiguration J = ommon Anode onfiguration D = Doubler onfiguration Eyelet designator (Applies only to TO-257AA package) = eramic Eyelets G = Glass Eyelets 7

Where to buy Infineon distribution partners and sales offices: www.infineon.com/wheretobuy Service hotline Infineon offers its toll-free 0800/4001 service hotline as one central number, available 24/7 in English, Mandarin and German. Germany... 0800 951 951 951 (German/English) hina, mainland... 4001 200 951 (Mandarin/English) India... 000 800 4402 951 (English) USA... 1-866 951 9519 (English/German) Other countries... 00* 800 951 951 951 (English/German) Direct access... +49 89 234-0 (interconnection fee, German/English) * Please note: Some countries may require you to dial a code other than 00 to access this international number. Please visit www.infineon.com/service for your country! Mobile Product atalog Mobile app for ios and Android. More information: www.infineon.com/hirel www.infineon.com Published by Infineon Technologies Americas orp. El Segundo, alifornia - U.S.A 2016 Infineon Technologies Americas orp. All rights reserved. Order number: B119-I0354-V1-7600-NA-E-P Date: 08 / 2016 Please note! THIS DOUMENT IS FOR INFORMATION PURPOSES ONLY AND ANY INFORMATION GIVEN HEREIN SHALL IN NO EVENT BE REGARDED AS A WARRANTY, GUARANTEE OR DESRIPTION OF ANY FUNTIONALITY, ONDITIONS AND/OR QUALITY OF OUR PRODUTS OR ANY SUITABILITY FOR A PARTIULAR PURPOSE. WITH REGARD TO THE TEHNIAL SPEIFIATIONS OF OUR PRODUTS, WE KINDLY ASK YOU TO REFER TO THE RELEVANT PRODUT DATA SHEETS PROVIDED BY US. OUR USTOMERS AND THEIR TEHNIAL DEPARTMENTS ARE REQUIRED TO EVALUATE THE SUITABILITY OF OUR PRODUTS FOR THE INTENDED APPLIATION. WE RESERVE THE RIGHT TO HANGE THIS DOUMENT AND/OR THE INFORMATION GIVEN HEREIN AT ANY TIME. Additional information For further information on technologies, our products, the application of our products, delivery terms and conditions and/or prices, please contact your nearest Infineon Technologies office (www.infineon.com). Warnings Due to technical requirements, our products may contain dangerous substances. For information on the types in question, please contact your nearest Infineon Technologies office. Except as otherwise explicitly approved by us in a written document signed by authorized representatives of Infineon Technologies, our products may not be used in any lifeendangering applications, including but not limited to medical, nuclear, military, life-critical or any other applications where a failure of the product or any consequences of the use thereof can result in personal injury.