HEXFRED Ultrafast Soft Recovery Diode, 15 A

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HEXFRED Ultrafast Soft Recovery Diode, 15 FETURES Ultrafast and ultrasoft recovery 1 TO-247C modified Base common cathode 2 2 3 Very low I RRM and Q rr Designed and qualified according to JEDEC -JESD47 Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 BENEFITS Reduced RFI and EMI Reduced power loss in diode and switching transistor Higher frequency operation Reduced snubbing Reduced parts count vailable 1 3 Cathode node PRODUCT SUMMRY Package TO-247C modified (2 pins) I F(V) 15 V R 6 V V F at I F 1.2 V t rr typ. 19 ns T J max. 15 C Diode variation Single die DESCRIPTION VS-HF15PB6... is a state of the art ultrafast recovery diode. Employing the latest in epitaxial construction and advanced processing techniques it features a superb combination of characteristics which result in performance which is unsurpassed by any rectifier previously available. With basic ratings of 6 V and 15 continuous current, the VS-HF15PB6... is especially well suited for use as the companion diode for IGBTs and MOSFETs. In addition to ultrafast recovery time, the HEXFRED product line features extremely low values of peak recovery current (I RRM ) and does not exhibit any tendency to snap-off during the t b portion of recovery. The HEXFRED features combine to offer designers a rectifier with lower noise and significantly lower switching losses in both the diode and the switching transistor. These HEXFRED advantages can help to significantly reduce snubbing, component count and heatsink sizes. The HEXFRED VS-HF15PB6... is ideally suited for applications in power supplies and power conversion systems (such as inverters), motor drives, and many other similar applications where high speed, high efficiency is needed. BSOLUTE MXIMUM RTINGS PRMETER SYMBOL TEST CONDITIONS VLUES UNITS Cathode to anode voltage V R 6 V Maximum continuous forward current I F T C = 1 C 15 Single pulse forward current I FSM 15 Maximum repetitive forward current I FRM 6 T C = 25 C 74 Maximum power dissipation P D T C = 1 C 29 W Operating junction and storage temperature range T J, T Stg -55 to +15 C Revision: 1-Jul-15 1 Document Number: 9452

ELECTRICL SPECIFICTIONS ( unless otherwise specified) Maximum forward voltage V FM PRMETER SYMBOL TEST CONDITIONS MIN. TYP. MX. UNITS Cathode to anode breakdown voltage V BR I R = 1 μ 6 - - I F = 3 See fig. 1-1.5 2. I F = 15-1.3 1.7 V I F = 15, - 1.2 1.6 Maximum reverse V R = V R rated - 1. 1 I RM See fig. 2 μ leakage current, V R =.8 x V R rated - 4 1 Junction capacitance C T See fig. 3-25 5 pf Series inductance L S Measured lead to lead 5 mm from package body - 12 - nh DYNMIC RECOVERY CHRCTERISTICS ( unless otherwise specified) PRMETER SYMBOL TEST CONDITIONS MIN. TYP. MX. UNITS Reverse recovery time See fig. 5, 1 Peak recovery current See fig. 6 Reverse recovery charge See fig. 7 Peak rate of fall of recovery current during t b See fig. 8 t rr I F = 1., di F /dt = 2 /μs, V R = 3 V - 19 - t rr1-42 6 t rr2-74 12 I RRM1-4. 6. I RRM2 I F = 15-6.5 1 di F /dt = 2 /μs Q rr1-8 18 Q rr2-22 6 di (rec)m /dt1-188 - di (rec)m /dt2-16 - ns nc /μs THERML - MECHNICL SPECIFICTIONS PRMETER SYMBOL TEST CONDITIONS MIN. TYP. MX. UNITS Lead temperature T lead.63" from case (1.6 mm) for 1 s - - 3 C Thermal resistance, junction to case R thjc - - 1.7 Thermal resistance, junction to ambient Thermal resistance, case to heatsink Weight Mounting torque R thj Typical socket mount - - 4 R thcs Mounting surface, flat, smooth and greased -.25 - K/W - 6. - g -.21 - oz. Marking device Case style TO-247C modified (JEDEC) HF15PB6 6. (5.) - 12 (1) kgf cm (lbf in) Revision: 1-Jul-15 2 Document Number: 9452

I F - Instantaneous Forward Current () 1 1 T J = 15 C 1 1. 1.2 1.4 1.6 1.8 2. 2.2 2.4 I R - Reverse Current (μ) 1 1 1 1 1.1.1 T J = 15 C 1 2 3 4 5 6 V FM - Forward Voltage Drop (V) Fig. 1 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current V R - Reverse Voltage (V) Fig. 2 - Typical Reverse Current vs. Reverse Voltage 1 C T - Junction Capacitance (pf) 1 1 1 1 V R - Reverse Voltage (V) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage 1 Z thjc - Thermal Response 1.1 D =.5 D =.2 D =.1 D =.5 D =.2 D =.1 Single pulse (thermal response).1.1.1.1.1.1 1 t 1 - Rectangular Pulse Duration (s) Fig. 4 - Maximum Thermal Impedance Z thjc Characteristics P DM Notes: 1. Duty factor D = t 1 /t 2 2. Peak T J = P DM x Z thjc + T C t 1 t 2 Revision: 1-Jul-15 3 Document Number: 9452

1 8 I F = 3 I F = 15 I F = 5 8 6 t rr (ns) 6 4 Q rr (nc) 4 I F = 3 I F = 15 I F = 5 2 1 1 di F /dt (/µs) Fig. 5 - Typical Reverse Recovery Time vs. di F /dt 2 1 1 di F /dt (/µs) Fig. 7 - Typical Stored Charge vs. di F /dt I rr () 25 2 15 1 I F = 3 I F = 15 I F = 5 di (rec)m /dt (/µs) 1 1 I F = 3 I F = 15 I F = 5 5 1 1 di F /dt (/µs) Fig. 6 - Typical Recovery Current vs. di F /dt 1 1 1 di F /dt (/µs) Fig. 8 - Typical di (rec)m /dt vs. di F /dt Revision: 1-Jul-15 4 Document Number: 9452

L = 7 μh.1 Ω di F /dt adjust G D IRFP25 D.U.T. S Fig. 9 - Reverse Recovery Parameter Test Circuit (3) t rr I F t a tb (2) I RRM (4) Q rr.5 I RRM di (rec)m /dt (5).75 I RRM (1) di F /dt (1) di F /dt - rate of change of current through zero crossing (2) I RRM - peak reverse recovery current (3) t rr - reverse recovery time measured from zero crossing point of negative going I F to point where a line passing through.75 I RRM and.5 I RRM extrapolated to zero current. (4) Q rr - area under curve defined by t rr and I RRM t rr x I Q RRM rr = 2 (5) di (rec)m /dt - peak rate of change of current during t b portion of t rr Fig. 1 - Reverse Recovery Waveform and Definitions Revision: 1-Jul-15 5 Document Number: 9452

ORDERING INFORMTION TBLE Device code VS- HF 15 PB 6 PbF 1 2 3 4 5 6 7 1 - product 2 - HEXFRED family 3 - Electron irradiated 4 - Current rating (15 = 15 ) 5 - PB = TO-247C modified 6 - Voltage rating: (6 = 6 V) 7 - Environmental digit: PbF = lead (Pb)-free and RoHS-compliant -N3 = halogen-free, RoHS-compliant, and totally lead (Pb)-free ORDERING INFORMTION (Example) PREFERRED P/N QUNTITY PER T/R MINIMUM ORDER QUNTITY PCKGING DESCRIPTION VS-HF15PB6PbF 25 5 ntistatic plastic tube VS-HF15PB6-N3 25 5 ntistatic plastic tube Dimensions Part marking information LINKS TO RELTED DOCUMENTS TO-247C modified PbF TO-247C modified -N3 www.vishay.com/doc?95541 www.vishay.com/doc?95225 www.vishay.com/doc?95442 Revision: 1-Jul-15 6 Document Number: 9452

DIMENSIONS in millimeters and inches TO-247C modified - 5 mils L/F Outline Dimensions B (2) R/2 Q (3) E S 2 (6) Ø P (Datum B) Ø K M D B M Ø P1 D2 2 x R (2) D D1 (4) 1 2 3 D Thermal pad 4 (5) L1 C L See view B (4) E1 2 x b2 3 x b.1 M C M b4 2 x e 1 C View - Plating (b1, b3, b5) Base metal DDE E (c) c1 C C (b, b2, b4) (4) Section C - C, D - D, E - E View B SYMBOL MILLIMETERS INCHES MILLIMETERS INCHES NOTES SYMBOL MIN. MX. MIN. MX. MIN. MX. MIN. MX. NOTES 4.65 5.31.183.29 D2.51 1.35.2.53 1 2.21 2.59.87.12 E 15.29 15.87.62.625 3 2 1.17 1.37.46.54 E1 13.46 -.53 - b.99 1.4.39.55 e 5.46 BSC.215 BSC b1.99 1.35.39.53 Ø K.254.1 b2 1.65 2.39.65.94 L 14.2 16.1.559.634 b3 1.65 2.34.65.92 L1 3.71 4.29.146.169 b4 2.59 3.43.12.135 Ø P 3.56 3.66.14.144 b5 2.59 3.38.12.133 Ø P1-7.39 -.291 c.38.89.15.35 Q 5.31 5.69.29.224 c1.38.84.15.33 R 4.52 5.49.178.216 D 19.71 2.7.776.815 3 S 5.51 BSC.217 BSC D1 13.8 -.515-4 Notes (1) Dimensioning and tolerance per SME Y14.5M-1994 (2) Contour of slot optional (3) Dimension D and E do not include mold flash. Mold flash shall not exceed.127 mm (.5") per side. These dimensions are measured at the outermost extremes of the plastic body (4) Thermal pad contour optional with dimensions D1 and E1 (5) Lead finish uncontrolled in L1 (6) Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (.154") (7) Outline conforms to JEDEC outline TO-247 with exception of dimension c and Q Revision: 2-pr-17 1 Document Number: 95541

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